SG148021A1 - Mirror and lithographic apparatus with mirror - Google Patents

Mirror and lithographic apparatus with mirror

Info

Publication number
SG148021A1
SG148021A1 SG200403851-9A SG2004038519A SG148021A1 SG 148021 A1 SG148021 A1 SG 148021A1 SG 2004038519 A SG2004038519 A SG 2004038519A SG 148021 A1 SG148021 A1 SG 148021A1
Authority
SG
Singapore
Prior art keywords
mirror
lithographic apparatus
protrusions
material selected
mirroring surface
Prior art date
Application number
SG200403851-9A
Other languages
English (en)
Inventor
Levinus Pieter Bakker
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG148021A1 publication Critical patent/SG148021A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
SG200403851-9A 2003-07-09 2004-06-30 Mirror and lithographic apparatus with mirror SG148021A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03077155A EP1496521A1 (en) 2003-07-09 2003-07-09 Mirror and lithographic apparatus with mirror

Publications (1)

Publication Number Publication Date
SG148021A1 true SG148021A1 (en) 2008-12-31

Family

ID=33442808

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403851-9A SG148021A1 (en) 2003-07-09 2004-06-30 Mirror and lithographic apparatus with mirror

Country Status (8)

Country Link
US (1) US7382436B2 (zh)
EP (1) EP1496521A1 (zh)
JP (1) JP4238186B2 (zh)
KR (1) KR100795139B1 (zh)
CN (1) CN100578265C (zh)
DE (1) DE602004021328D1 (zh)
SG (1) SG148021A1 (zh)
TW (1) TWI289735B (zh)

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SG112034A1 (en) * 2003-11-06 2005-06-29 Asml Netherlands Bv Optical element, lithographic apparatus comprising such optical element and device manufacturing method
CN101095084A (zh) * 2004-12-14 2007-12-26 拉多韦有限公司 形成用于光刻转印的准直uv光线的方法和设备
US7330239B2 (en) * 2005-04-08 2008-02-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a blazing portion of a contrast device
WO2007105406A1 (ja) * 2006-03-10 2007-09-20 Nikon Corporation 投影光学系、露光装置および半導体デバイスの製造方法
WO2007119681A1 (ja) * 2006-04-13 2007-10-25 Panasonic Corporation 回折光学素子及びその製造方法
US20090250637A1 (en) * 2008-04-02 2009-10-08 Cymer, Inc. System and methods for filtering out-of-band radiation in EUV exposure tools
NL1036891A1 (nl) * 2008-05-02 2009-11-03 Asml Netherlands Bv Dichroic mirror, method for manufacturing a dichroic mirror, lithographic apparatus, semiconductor device and method of manufacturing therefor.
US8227778B2 (en) * 2008-05-20 2012-07-24 Komatsu Ltd. Semiconductor exposure device using extreme ultra violet radiation
JP5061069B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光を用いる半導体露光装置
JP5061063B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光用ミラーおよび極端紫外光源装置
CN102047183B (zh) * 2008-06-04 2013-12-18 Asml荷兰有限公司 多层反射镜和光刻设备
KR20110026497A (ko) 2008-06-30 2011-03-15 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치의 피복되지 않은 다층 미러 상의 침적물을 제거하는 방법, 리소그래피 장치, 및 디바이스 제조 방법
US20100033704A1 (en) * 2008-08-11 2010-02-11 Masayuki Shiraishi Deformable mirror, mirror apparatus, and exposure apparatus
KR101617648B1 (ko) 2008-08-15 2016-05-03 에이에스엠엘 네델란즈 비.브이. 거울, 리소그래피 장치 및 디바이스 제조 방법
US9082521B2 (en) * 2009-02-13 2015-07-14 Asml Netherlands B.V. EUV multilayer mirror with interlayer and lithographic apparatus using the mirror
DE102009044462A1 (de) * 2009-11-06 2011-01-05 Carl Zeiss Smt Ag Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage
TWI596384B (zh) 2012-01-18 2017-08-21 Ａｓｍｌ荷蘭公司 光源收集器元件、微影裝置及元件製造方法
DE102012201075A1 (de) 2012-01-25 2013-07-25 Carl Zeiss Smt Gmbh Optische Anordnung, EUV-Lithographieanlage und Verfahren zum Konfigurieren einer optischen Anordnung
DE102012010093A1 (de) 2012-05-23 2013-11-28 Carl Zeiss Smt Gmbh Facettenspiegel
DE102012220465A1 (de) * 2012-11-09 2014-05-15 Carl Zeiss Smt Gmbh EUV-Kollektor
US9151881B2 (en) * 2012-11-12 2015-10-06 Kla-Tencor Corporation Phase grating for mask inspection system
US10216093B2 (en) * 2013-01-28 2019-02-26 Asml Netherlands B.V. Projection system and minor and radiation source for a lithographic apparatus
DE102013202948A1 (de) 2013-02-22 2014-09-11 Carl Zeiss Smt Gmbh Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür
US10401723B2 (en) 2013-06-03 2019-09-03 Asml Netherlands B.V. Patterning device
US9529249B2 (en) 2013-11-15 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
DE102013223935A1 (de) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Beleuchtungssystem für die EUV-Belichtungslithographie
NL2015639A (en) * 2014-11-28 2016-09-20 Asml Netherlands Bv Encoder, position measurement system and lithographic apparatus.
CN114791653A (zh) * 2015-03-24 2022-07-26 申泰公司 具有纹理化表面的光学块
US10495976B2 (en) * 2015-09-03 2019-12-03 Asml Netherlands B.V. Attenuation apparatus and method
KR102390742B1 (ko) * 2017-10-24 2022-04-26 에이에스엠엘 네델란즈 비.브이. 마크, 오버레이 타겟, 및 정렬 및 오버레이 방법
CN110632687B (zh) * 2018-06-22 2021-07-27 中国科学院上海微系统与信息技术研究所 可调控电磁波吸收的超材料晶体结构及其制备方法
CN114791640B (zh) * 2021-01-25 2024-04-09 华为技术有限公司 闪耀光栅及闪耀光栅的制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4915463A (en) * 1988-10-18 1990-04-10 The United States Of America As Represented By The Department Of Energy Multilayer diffraction grating
US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
EP1065532A2 (en) * 1999-07-02 2001-01-03 Asm Lithography B.V. Multilayer extreme-ultraviolet mirror with enhanced reflectivity and lithographic projection apparatus comprising the mirror
US20030058529A1 (en) * 2001-09-27 2003-03-27 Michael Goldstein Reflective spectral filtering of high power extreme ultra-violet radiation

Family Cites Families (10)

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US3045532A (en) * 1958-05-19 1962-07-24 Coleman Instr Inc Diffraction grating having a plurality of blaze angles
US3046839A (en) * 1959-01-12 1962-07-31 Polaroid Corp Processes for preparing light polarizing materials
JPS5092148A (zh) * 1973-12-14 1975-07-23
US6469827B1 (en) * 1998-08-06 2002-10-22 Euv Llc Diffraction spectral filter for use in extreme-UV lithography condenser
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US6449096B1 (en) * 2000-07-13 2002-09-10 Network Photonics, Inc. Diffraction grating with reduced polarization-dependent loss
US6510200B1 (en) * 2001-06-29 2003-01-21 Osmic, Inc. Multi-layer structure with variable bandpass for monochromatization and spectroscopy
DE50208750D1 (de) 2001-08-01 2007-01-04 Zeiss Carl Smt Ag Reflektives Projektionsobjektiv für EUV-Photolithographie
US7027226B2 (en) * 2001-09-17 2006-04-11 Euv Llc Diffractive optical element for extreme ultraviolet wavefront control
JP4310080B2 (ja) * 2002-06-17 2009-08-05 キヤノン株式会社 回折光学素子およびこれを備えた光学系、光学装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4915463A (en) * 1988-10-18 1990-04-10 The United States Of America As Represented By The Department Of Energy Multilayer diffraction grating
US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
EP1065532A2 (en) * 1999-07-02 2001-01-03 Asm Lithography B.V. Multilayer extreme-ultraviolet mirror with enhanced reflectivity and lithographic projection apparatus comprising the mirror
US20030058529A1 (en) * 2001-09-27 2003-03-27 Michael Goldstein Reflective spectral filtering of high power extreme ultra-violet radiation

Also Published As

Publication number Publication date
TW200510963A (en) 2005-03-16
JP4238186B2 (ja) 2009-03-11
CN1576903A (zh) 2005-02-09
JP2005049845A (ja) 2005-02-24
US20050024614A1 (en) 2005-02-03
CN100578265C (zh) 2010-01-06
TWI289735B (en) 2007-11-11
US7382436B2 (en) 2008-06-03
KR100795139B1 (ko) 2008-01-17
KR20050007150A (ko) 2005-01-17
EP1496521A1 (en) 2005-01-12
DE602004021328D1 (de) 2009-07-16

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