SG144823A1 - Improvements relating to ion implanters - Google Patents

Improvements relating to ion implanters

Info

Publication number
SG144823A1
SG144823A1 SG200800179-4A SG2008001794A SG144823A1 SG 144823 A1 SG144823 A1 SG 144823A1 SG 2008001794 A SG2008001794 A SG 2008001794A SG 144823 A1 SG144823 A1 SG 144823A1
Authority
SG
Singapore
Prior art keywords
ion
improvements relating
ion implanters
implanters
roughened
Prior art date
Application number
SG200800179-4A
Other languages
English (en)
Inventor
Erik Collart
Michael John King
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG144823A1 publication Critical patent/SG144823A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/028—Particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
SG200800179-4A 2007-01-09 2008-01-08 Improvements relating to ion implanters SG144823A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/651,107 US20080164427A1 (en) 2007-01-09 2007-01-09 Ion implanters

Publications (1)

Publication Number Publication Date
SG144823A1 true SG144823A1 (en) 2008-08-28

Family

ID=39368642

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200800179-4A SG144823A1 (en) 2007-01-09 2008-01-08 Improvements relating to ion implanters

Country Status (7)

Country Link
US (1) US20080164427A1 (ja)
EP (1) EP1944790A3 (ja)
JP (1) JP2008204944A (ja)
KR (1) KR20080065537A (ja)
CN (1) CN101369509A (ja)
SG (1) SG144823A1 (ja)
TW (1) TW200845086A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838849B2 (en) * 2007-10-24 2010-11-23 Applied Materials, Inc. Ion implanters
US7807984B2 (en) * 2008-01-02 2010-10-05 Applied Materials, Inc. Ion implanters
US20090179158A1 (en) * 2008-01-16 2009-07-16 Varian Semiconductor Equpiment Associate, Inc. In-vacuum protective liners
US8253118B2 (en) * 2009-10-14 2012-08-28 Fei Company Charged particle beam system having multiple user-selectable operating modes
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
SG10201605310RA (en) * 2009-10-27 2016-08-30 Entegris Inc Ion implantation system and method
US8669517B2 (en) * 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
US8963107B2 (en) * 2012-01-12 2015-02-24 Axcelis Technologies, Inc. Beam line design to reduce energy contamination
TWI612856B (zh) * 2013-01-16 2018-01-21 艾克塞利斯科技公司 用於減少能量污染之射束線設計
US9437397B2 (en) * 2013-06-27 2016-09-06 Varian Semiconductor Equipment Associates, Inc. Textured silicon liners in substrate processing systems
JP6169043B2 (ja) * 2014-05-26 2017-07-26 住友重機械イオンテクノロジー株式会社 イオン発生装置および熱電子放出部
US9903016B2 (en) 2014-10-23 2018-02-27 E/G Electro-Graph, Inc. Device having preformed triple junctions to maintain electrode conductivity and a method for making and using the device
CN109690724A (zh) * 2016-11-11 2019-04-26 日新离子机器株式会社 离子源
US10867772B2 (en) * 2017-03-21 2020-12-15 Varian Semiconductor Equipment Associates, Inc. Electrostatic element having grooved exterior surface
US10886098B2 (en) * 2018-11-20 2021-01-05 Applied Materials, Inc. Electrostatic filter and ion implanter having asymmetric electrostatic configuration
JP7284464B2 (ja) * 2021-05-06 2023-05-31 日新イオン機器株式会社 イオンビーム照射装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560879A (en) * 1983-09-16 1985-12-24 Rca Corporation Method and apparatus for implantation of doubly-charged ions
US4587432A (en) * 1984-08-03 1986-05-06 Applied Materials, Inc. Apparatus for ion implantation
US4754200A (en) * 1985-09-09 1988-06-28 Applied Materials, Inc. Systems and methods for ion source control in ion implanters
US5656092A (en) * 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
US6623595B1 (en) * 2000-03-27 2003-09-23 Applied Materials, Inc. Wavy and roughened dome in plasma processing reactor
US6576909B2 (en) * 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US20050133736A1 (en) * 2003-12-17 2005-06-23 Otto Chen Ion implantation apparatus and partical collection structure thereof
US7078710B2 (en) * 2004-06-15 2006-07-18 International Business Machines Corporation Ion beam system
US7358508B2 (en) * 2005-11-10 2008-04-15 Axcelis Technologies, Inc. Ion implanter with contaminant collecting surface

Also Published As

Publication number Publication date
US20080164427A1 (en) 2008-07-10
EP1944790A2 (en) 2008-07-16
TW200845086A (en) 2008-11-16
CN101369509A (zh) 2009-02-18
KR20080065537A (ko) 2008-07-14
JP2008204944A (ja) 2008-09-04
EP1944790A3 (en) 2008-12-03

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