SG133608A1 - Method to determine the value of process parameters based on scatterometry data - Google Patents

Method to determine the value of process parameters based on scatterometry data

Info

Publication number
SG133608A1
SG133608A1 SG200704717-8A SG2007047178A SG133608A1 SG 133608 A1 SG133608 A1 SG 133608A1 SG 2007047178 A SG2007047178 A SG 2007047178A SG 133608 A1 SG133608 A1 SG 133608A1
Authority
SG
Singapore
Prior art keywords
value
process parameters
parameters based
scatterometry data
scatterometry
Prior art date
Application number
SG200704717-8A
Other languages
English (en)
Inventor
Der Laan Hans Van
Rene Hubert Jacobus Carpaij
Hugo Augustinus Joseph Cramer
Antoine Gaston Marie Kiers
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG133608A1 publication Critical patent/SG133608A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • G01N21/274—Calibration, base line adjustment, drift correction
    • G01N21/278—Constitution of standards
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4785—Standardising light scatter apparatus; Standards therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • G01N21/274—Calibration, base line adjustment, drift correction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
SG200704717-8A 2004-02-23 2005-02-22 Method to determine the value of process parameters based on scatterometry data SG133608A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54616504P 2004-02-23 2004-02-23
US10/853,724 US20050185174A1 (en) 2004-02-23 2004-05-26 Method to determine the value of process parameters based on scatterometry data

Publications (1)

Publication Number Publication Date
SG133608A1 true SG133608A1 (en) 2007-07-30

Family

ID=34864555

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200704717-8A SG133608A1 (en) 2004-02-23 2005-02-22 Method to determine the value of process parameters based on scatterometry data

Country Status (6)

Country Link
US (1) US20050185174A1 (ja)
EP (1) EP1721218B1 (ja)
JP (1) JP4486651B2 (ja)
SG (1) SG133608A1 (ja)
TW (1) TWI266042B (ja)
WO (1) WO2005081069A1 (ja)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361941B1 (en) * 2004-12-21 2008-04-22 Kla-Tencor Technologies Corporation Calibration standards and methods
US20060186406A1 (en) * 2005-02-18 2006-08-24 Texas Instruments Inc. Method and system for qualifying a semiconductor etch process
KR20070033106A (ko) * 2005-09-20 2007-03-26 삼성전자주식회사 반도체 소자의 오버레이 측정 방법 및 오버레이 측정시스템
US7916284B2 (en) * 2006-07-18 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8294907B2 (en) * 2006-10-13 2012-10-23 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
DE102006056625B4 (de) * 2006-11-30 2014-11-20 Globalfoundries Inc. Verfahren und Teststruktur zum Bestimmen von Fokuseinstellungen in einem Lithographieprozess auf der Grundlage von CD-Messungen
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US20080148875A1 (en) * 2006-12-20 2008-06-26 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7619737B2 (en) 2007-01-22 2009-11-17 Asml Netherlands B.V Method of measurement, an inspection apparatus and a lithographic apparatus
US20080233487A1 (en) * 2007-03-21 2008-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and System for Optimizing Lithography Focus and/or Energy Using a Specially-Designed Optical Critical Dimension Pattern
US8189195B2 (en) * 2007-05-09 2012-05-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
JP5270109B2 (ja) * 2007-05-23 2013-08-21 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7460237B1 (en) * 2007-08-02 2008-12-02 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7999920B2 (en) 2007-08-22 2011-08-16 Asml Netherlands B.V. Method of performing model-based scanner tuning
JP4968470B2 (ja) * 2007-10-11 2012-07-04 大日本印刷株式会社 周期構造測定方法及びその方法を用いた周期構造測定装置
NL1036098A1 (nl) * 2007-11-08 2009-05-11 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus lithographic, processing cell and device manufacturing method.
NL1036459A1 (nl) * 2008-02-13 2009-08-14 Asml Netherlands Bv Method and apparatus for angular-resolved spectroscopic lithography characterization.
CN102037550B (zh) * 2008-05-21 2012-08-15 恪纳腾公司 使工具与工艺效果分离的衬底矩阵
NL2003497A (en) * 2008-09-23 2010-03-24 Asml Netherlands Bv Lithographic system, lithographic method and device manufacturing method.
NL2003492A (en) * 2008-09-30 2010-03-31 Asml Netherlands Bv Method and system for determining a lithographic process parameter.
WO2011003734A1 (en) * 2009-07-06 2011-01-13 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus and lithographic processing cell
WO2011045132A1 (en) * 2009-10-12 2011-04-21 Asml Netherlands B.V. Method, inspection apparatus and substrate for determining an approximate structure of an object on the substrate
WO2011048008A1 (en) * 2009-10-22 2011-04-28 Asml Netherlands B.V. Methods and apparatus for calculating electromagnetic scattering properties of a structure using a normal-vector field and for reconstruction of approximate structures
NL2006099A (en) * 2010-02-19 2011-08-22 Asml Netherlands Bv Calibration of lithographic apparatus.
KR101885392B1 (ko) * 2010-10-26 2018-08-03 가부시키가이샤 니콘 검사 장치, 검사 방법, 노광 방법, 및 반도체 디바이스의 제조 방법
IL218588A (en) * 2011-03-23 2015-09-24 Asml Netherlands Bv A method and system for calculating the electromagnetic scattering properties of a structure and for reconstructing approximate structures
NL2008807A (en) * 2011-06-21 2012-12-28 Asml Netherlands Bv Inspection method and apparatus.
JP5377689B2 (ja) * 2011-09-21 2013-12-25 斎藤 光正 定在波レーダー内蔵型ｌｅｄ照明器具
US8468471B2 (en) * 2011-09-23 2013-06-18 Kla-Tencor Corp. Process aware metrology
NL2011683A (en) 2012-12-13 2014-06-16 Asml Netherlands Bv Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product.
US9383661B2 (en) 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) * 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
KR20150092936A (ko) * 2014-02-06 2015-08-17 삼성전자주식회사 광학 측정 방법 및 광학 측정 장치
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
KR102307022B1 (ko) 2015-06-18 2021-09-30 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 교정 방법
WO2017016839A1 (en) 2015-07-24 2017-02-02 Asml Netherlands B.V. Inspection apparatus, inspection method, lithographic apparatus and manufacturing method
US10380728B2 (en) 2015-08-31 2019-08-13 Kla-Tencor Corporation Model-based metrology using images
US10394136B2 (en) 2015-09-30 2019-08-27 Asml Netherlands B.V. Metrology method for process window definition
US10359705B2 (en) 2015-10-12 2019-07-23 Asml Netherlands B.V. Indirect determination of a processing parameter
KR102439450B1 (ko) * 2016-02-23 2022-09-01 에이에스엠엘 네델란즈 비.브이. 패터닝 프로세스 제어 방법, 리소그래피 장치, 계측 장치 리소그래피 셀 및 연관된 컴퓨터 프로그램
US20170256465A1 (en) 2016-03-01 2017-09-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter
US11313809B1 (en) * 2016-05-04 2022-04-26 Kla-Tencor Corporation Process control metrology
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
EP3293575A1 (en) * 2016-09-12 2018-03-14 ASML Netherlands B.V. Differential target design and method for process metrology
JP2020518845A (ja) * 2017-05-04 2020-06-25 エーエスエムエル ホールディング エヌ．ブイ． 光学メトロロジの性能を測定するための方法、基板、及び装置
EP3480659A1 (en) * 2017-11-01 2019-05-08 ASML Netherlands B.V. Estimation of data in metrology
FR3074906B1 (fr) * 2017-12-07 2024-01-19 Saint Gobain Procede et dispositif de determination automatique de valeurs d'ajustement de parametres de fonctionnement d'une ligne de depot
US10978278B2 (en) * 2018-07-31 2021-04-13 Tokyo Electron Limited Normal-incident in-situ process monitor sensor
WO2021085522A1 (ja) * 2019-10-30 2021-05-06 Ａｌｉｔｅｃｓ株式会社 処理条件推定装置、方法及びプログラム
CN115258323B (zh) * 2021-04-29 2024-06-21 北京小米移动软件有限公司 撕膜控制方法、装置、电子设备及存储介质
EP4160314A1 (en) * 2021-10-04 2023-04-05 ASML Netherlands B.V. Method for measuring at least one target on a substrate
WO2023096932A1 (en) * 2021-11-24 2023-06-01 Onto Innovation Inc. Optical metrology with influence map of unknown section

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6622059B1 (en) * 2000-04-13 2003-09-16 Advanced Micro Devices, Inc. Automated process monitoring and analysis system for semiconductor processing
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US6917901B2 (en) * 2002-02-20 2005-07-12 International Business Machines Corporation Contact hole profile and line edge width metrology for critical image control and feedback of lithographic focus

Also Published As

Publication number Publication date
US20050185174A1 (en) 2005-08-25
EP1721218B1 (en) 2012-04-04
TW200538886A (en) 2005-12-01
JP4486651B2 (ja) 2010-06-23
WO2005081069A8 (en) 2006-06-08
EP1721218A1 (en) 2006-11-15
JP2007523488A (ja) 2007-08-16
WO2005081069A1 (en) 2005-09-01
TWI266042B (en) 2006-11-11

Similar Documents

Publication Publication Date Title
SG133608A1 (en) Method to determine the value of process parameters based on scatterometry data
HK1107821A1 (en) Method for the production of dihydropteridinones
PL1784375T3 (pl) Sposób wytwarzania kwasu mrówkowego
IL176767A0 (en) Production method
EP1866395A4 (en) APPARATUS AND METHOD FOR THE PRODUCTION OF BIOCOMBUSTIBLE
EG26605A (en) Process for the preparation of 4- (4-aminophenyl) -3-morpholine
EP1927585A4 (en) PROCESS FOR OBTAINING 3,3-DIPHENYL PROPYLAMINES
HK1107504A1 (en) Method for enhancing the content of soybean seed gammaaminobutyric acid
PL382927A1 (pl) Sposoby wytwarzania 4-aminochinazolin
EP1790633A4 (en) PROCESS FOR THE PREPARATION OF 2-HYDROXY-4-METHYLTHIOBUTAN ACID
GB0416952D0 (en) Scale making method
GB0523239D0 (en) Quantification method
EP2094840A4 (en) NOVEL N-ACETYLGLUCOSAMINE-2-EPIMERASE AND METHOD FOR PRODUCING NEURAMINIC CMP ACID USING THE ENZYME
HK1104502A1 (en) Method of processing wood
ZA200700635B (en) Method for the production of dairylcycloalkyl derivatives
GB0418529D0 (en) Method for analysing
ZA200700282B (en) Method for the production of dihydropteridinones
PL369705A1 (pl) Sposób wytwarzania sulfatiazolu w środowisku wodnym
PL366494A1 (en) Method for obtaining 5-nitroguaiacol
PL369884A1 (pl) Sposób wytwarzania podstawionych cyjanowinylooksiranów
GB0428015D0 (en) Inspection method
PL372016A1 (pl) Sposób wytwarzania pochodnych N-fenylo-2-pirymidynoamin
PL369419A1 (pl) Sposób wytwarzania płyty-folii fotoluminescencyjnej
IL165188A0 (en) Method of computer program creation
PL366493A1 (en) Method for manufacture of s-(-)-1,2,3,4- tetrahydro-2-naphtol