SG127810A1 - Method and process for reactive gas cleaning of tool parts - Google Patents

Method and process for reactive gas cleaning of tool parts

Info

Publication number
SG127810A1
SG127810A1 SG200603146A SG200603146A SG127810A1 SG 127810 A1 SG127810 A1 SG 127810A1 SG 200603146 A SG200603146 A SG 200603146A SG 200603146 A SG200603146 A SG 200603146A SG 127810 A1 SG127810 A1 SG 127810A1
Authority
SG
Singapore
Prior art keywords
line
reactive gas
tool parts
contaminated
parts
Prior art date
Application number
SG200603146A
Other languages
English (en)
Inventor
Dingjun Wu
Eugene Joseph Karwacki Jr
Bing Ji
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG127810A1 publication Critical patent/SG127810A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
SG200603146A 2005-05-16 2006-05-10 Method and process for reactive gas cleaning of tool parts SG127810A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/130,307 US20060254613A1 (en) 2005-05-16 2005-05-16 Method and process for reactive gas cleaning of tool parts

Publications (1)

Publication Number Publication Date
SG127810A1 true SG127810A1 (en) 2006-12-29

Family

ID=37012079

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200603146A SG127810A1 (en) 2005-05-16 2006-05-10 Method and process for reactive gas cleaning of tool parts

Country Status (7)

Country Link
US (1) US20060254613A1 (ja)
EP (1) EP1724374A1 (ja)
JP (1) JP2006324663A (ja)
KR (1) KR100786609B1 (ja)
CN (1) CN1891858A (ja)
SG (1) SG127810A1 (ja)
TW (1) TW200710972A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080268281A1 (en) * 2007-04-27 2008-10-30 Quan Bai Shield Components With Enhanced Thermal and Mechanical Stability
KR20100071961A (ko) * 2007-09-19 2010-06-29 가부시키가이샤 히다치 고쿠사이 덴키 클리닝 방법 및 기판 처리 장치
US8404135B2 (en) * 2008-08-26 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma cleaning for process chamber component refurbishment
KR101630234B1 (ko) * 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
JP6422262B2 (ja) * 2013-10-24 2018-11-14 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN117153656A (zh) * 2016-01-13 2023-12-01 应用材料公司 用于蚀刻硬件的基于氢等离子体的清洗工艺
JP7166950B2 (ja) 2019-02-07 2022-11-08 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
KR102336559B1 (ko) * 2019-11-26 2021-12-08 세메스 주식회사 부품 표면 처리 방법 및 부품 처리 장치
JP7205455B2 (ja) * 2019-12-19 2023-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP7118099B2 (ja) * 2020-01-15 2022-08-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3909608B2 (ja) * 1994-09-30 2007-04-25 株式会社アルバック 真空処理装置
US6274058B1 (en) * 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
US6067999A (en) * 1998-04-23 2000-05-30 International Business Machines Corporation Method for deposition tool cleaning
US6230895B1 (en) * 1999-08-20 2001-05-15 David P. Laube Container for transporting refurbished semiconductor processing equipment
US6569257B1 (en) * 2000-11-09 2003-05-27 Applied Materials Inc. Method for cleaning a process chamber
US20020132488A1 (en) * 2001-01-12 2002-09-19 Applied Materials, Inc. Method of etching tantalum
US6818566B2 (en) * 2002-10-18 2004-11-16 The Boc Group, Inc. Thermal activation of fluorine for use in a semiconductor chamber

Also Published As

Publication number Publication date
KR100786609B1 (ko) 2007-12-21
US20060254613A1 (en) 2006-11-16
EP1724374A1 (en) 2006-11-22
CN1891858A (zh) 2007-01-10
TW200710972A (en) 2007-03-16
KR20060118357A (ko) 2006-11-23
JP2006324663A (ja) 2006-11-30

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