SG122873A1 - Plasma chamber system and method of ashing photoresist pattern formed on substrate having low-k dielectric layer using the same - Google Patents

Plasma chamber system and method of ashing photoresist pattern formed on substrate having low-k dielectric layer using the same

Info

Publication number
SG122873A1
SG122873A1 SG200504382A SG200504382A SG122873A1 SG 122873 A1 SG122873 A1 SG 122873A1 SG 200504382 A SG200504382 A SG 200504382A SG 200504382 A SG200504382 A SG 200504382A SG 122873 A1 SG122873 A1 SG 122873A1
Authority
SG
Singapore
Prior art keywords
substrate
dielectric layer
low
same
pattern formed
Prior art date
Application number
SG200504382A
Inventor
Chang-Weon Lee
Original Assignee
Psk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psk Inc filed Critical Psk Inc
Publication of SG122873A1 publication Critical patent/SG122873A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200504382A 2004-11-25 2005-07-12 Plasma chamber system and method of ashing photoresist pattern formed on substrate having low-k dielectric layer using the same SG122873A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040097461A KR100683416B1 (en) 2004-11-25 2004-11-25 Plasma Chamber System And Method Of Ashing A Photoresist Pattern Formed On The Substrate Having Low-k Dielectric Using The Same

Publications (1)

Publication Number Publication Date
SG122873A1 true SG122873A1 (en) 2006-06-29

Family

ID=36769933

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200504382A SG122873A1 (en) 2004-11-25 2005-07-12 Plasma chamber system and method of ashing photoresist pattern formed on substrate having low-k dielectric layer using the same

Country Status (4)

Country Link
KR (1) KR100683416B1 (en)
CN (1) CN100582949C (en)
SG (1) SG122873A1 (en)
TW (1) TWI262557B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
KR100913322B1 (en) * 2007-12-24 2009-08-20 주식회사 동부하이텍 Method of manufacturing a semiconductor device
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
CN102193344B (en) * 2010-03-15 2013-04-10 中芯国际集成电路制造(上海)有限公司 Method for removing photoresist in deep N-well process
CN113766719A (en) * 2020-06-04 2021-12-07 山西大学 Device and method for controlling movement of charged particles in plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123010A (en) * 1984-11-20 1986-06-10 Anelva Corp Production for amorphous thin film magnetic head
EP0343500A1 (en) * 1988-05-23 1989-11-29 Nippon Telegraph And Telephone Corporation Plasma etching apparatus
WO1993001698A1 (en) * 1991-07-12 1993-01-21 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
US6022460A (en) * 1999-01-18 2000-02-08 Inha University Foundation Enhanced inductively coupled plasma reactor
US6375860B1 (en) * 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6432634A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Plasma treater
JP2658563B2 (en) * 1990-11-21 1997-09-30 富士電機株式会社 Microwave plasma dry cleaning method
JPH04329637A (en) * 1991-05-01 1992-11-18 Fuji Electric Co Ltd Manufacture of insulating film
JPH0521391A (en) * 1991-07-12 1993-01-29 Sumitomo Metal Ind Ltd Microwave plasma device
JPH05315291A (en) * 1992-05-07 1993-11-26 Mitsubishi Electric Corp Device and method for plasma processing
JP2000021871A (en) 1998-06-30 2000-01-21 Tokyo Electron Ltd Plasma treating method
JP4523094B2 (en) * 1999-10-19 2010-08-11 東京エレクトロン株式会社 Plasma processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123010A (en) * 1984-11-20 1986-06-10 Anelva Corp Production for amorphous thin film magnetic head
EP0343500A1 (en) * 1988-05-23 1989-11-29 Nippon Telegraph And Telephone Corporation Plasma etching apparatus
WO1993001698A1 (en) * 1991-07-12 1993-01-21 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
US6375860B1 (en) * 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source
US6022460A (en) * 1999-01-18 2000-02-08 Inha University Foundation Enhanced inductively coupled plasma reactor

Also Published As

Publication number Publication date
TWI262557B (en) 2006-09-21
CN1779575A (en) 2006-05-31
CN100582949C (en) 2010-01-20
TW200618105A (en) 2006-06-01
KR20060058424A (en) 2006-05-30
KR100683416B1 (en) 2007-02-20

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