SG11202113376YA - Process for the generation of metal- or semimetal-containing films - Google Patents
Process for the generation of metal- or semimetal-containing filmsInfo
- Publication number
- SG11202113376YA SG11202113376YA SG11202113376YA SG11202113376YA SG11202113376YA SG 11202113376Y A SG11202113376Y A SG 11202113376YA SG 11202113376Y A SG11202113376Y A SG 11202113376YA SG 11202113376Y A SG11202113376Y A SG 11202113376YA SG 11202113376Y A SG11202113376Y A SG 11202113376YA
- Authority
- SG
- Singapore
- Prior art keywords
- semimetal
- generation
- metal
- containing films
- films
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/069—Aluminium compounds without C-aluminium linkages
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP19178784 | 2019-06-06 | ||
| PCT/EP2020/064679 WO2020244988A1 (en) | 2019-06-06 | 2020-05-27 | Process for the generation of metal- or semimetal-containing films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202113376YA true SG11202113376YA (en) | 2021-12-30 |
Family
ID=66776230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202113376YA SG11202113376YA (en) | 2019-06-06 | 2020-05-27 | Process for the generation of metal- or semimetal-containing films |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20220298637A1 (zh) |
| EP (1) | EP3980577A1 (zh) |
| JP (1) | JP2022536111A (zh) |
| KR (1) | KR20220158672A (zh) |
| CN (1) | CN113906158A (zh) |
| IL (1) | IL288576A (zh) |
| SG (1) | SG11202113376YA (zh) |
| TW (1) | TW202112786A (zh) |
| WO (1) | WO2020244988A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024033244A1 (en) * | 2022-08-10 | 2024-02-15 | Basf Se | Process for preparing coated organic particles |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090226612A1 (en) | 2007-10-29 | 2009-09-10 | Satoko Ogawa | Alkaline earth metal containing precursor solutions |
| US8927059B2 (en) * | 2011-11-08 | 2015-01-06 | Applied Materials, Inc. | Deposition of metal films using alane-based precursors |
| US10745808B2 (en) | 2015-07-24 | 2020-08-18 | Versum Materials Us, Llc | Methods for depositing Group 13 metal or metalloid nitride films |
| WO2017093265A1 (en) * | 2015-11-30 | 2017-06-08 | Basf Se | Process for the generation of metallic films |
| CN109844172A (zh) * | 2016-10-13 | 2019-06-04 | 巴斯夫欧洲公司 | 生产含金属膜的方法 |
-
2020
- 2020-05-27 JP JP2021572357A patent/JP2022536111A/ja active Pending
- 2020-05-27 SG SG11202113376YA patent/SG11202113376YA/en unknown
- 2020-05-27 EP EP20727328.5A patent/EP3980577A1/en active Pending
- 2020-05-27 WO PCT/EP2020/064679 patent/WO2020244988A1/en active Application Filing
- 2020-05-27 CN CN202080041282.3A patent/CN113906158A/zh active Pending
- 2020-05-27 KR KR1020227000266A patent/KR20220158672A/ko unknown
- 2020-05-27 US US17/616,736 patent/US20220298637A1/en active Pending
- 2020-06-05 TW TW109118970A patent/TW202112786A/zh unknown
-
2021
- 2021-12-01 IL IL288576A patent/IL288576A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202112786A (zh) | 2021-04-01 |
| US20220298637A1 (en) | 2022-09-22 |
| KR20220158672A (ko) | 2022-12-01 |
| WO2020244988A1 (en) | 2020-12-10 |
| CN113906158A (zh) | 2022-01-07 |
| JP2022536111A (ja) | 2022-08-12 |
| IL288576A (en) | 2022-02-01 |
| EP3980577A1 (en) | 2022-04-13 |
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