IL264704B - Process for the generation of thin inorganic films - Google Patents

Process for the generation of thin inorganic films

Info

Publication number
IL264704B
IL264704B IL264704A IL26470419A IL264704B IL 264704 B IL264704 B IL 264704B IL 264704 A IL264704 A IL 264704A IL 26470419 A IL26470419 A IL 26470419A IL 264704 B IL264704 B IL 264704B
Authority
IL
Israel
Prior art keywords
generation
inorganic films
thin inorganic
thin
films
Prior art date
Application number
IL264704A
Other languages
Hebrew (he)
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL264704B publication Critical patent/IL264704B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
IL264704A 2016-08-31 2019-02-07 Process for the generation of thin inorganic films IL264704B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16186628 2016-08-31
PCT/EP2017/071236 WO2018041695A1 (en) 2016-08-31 2017-08-23 Process for the generation of thin inorganic films

Publications (1)

Publication Number Publication Date
IL264704B true IL264704B (en) 2022-03-01

Family

ID=56888941

Family Applications (1)

Application Number Title Priority Date Filing Date
IL264704A IL264704B (en) 2016-08-31 2019-02-07 Process for the generation of thin inorganic films

Country Status (8)

Country Link
US (1) US11180852B2 (en)
EP (1) EP3507293B1 (en)
KR (1) KR102467795B1 (en)
CN (1) CN109641927B (en)
IL (1) IL264704B (en)
SG (1) SG11201900607WA (en)
TW (1) TWI757325B (en)
WO (1) WO2018041695A1 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777565B2 (en) 2000-06-29 2004-08-17 Board Of Trustees, The University Of Illinois Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
KR100643637B1 (en) * 2005-01-25 2006-11-10 한국화학연구원 Process for preparing nickel oxide thin film by atomic layer deposition using nickel aminoalkoxide precursor
KR100704914B1 (en) * 2005-08-24 2007-04-06 한국화학연구원 Method for preparing nickel oxide thin film by metal organic chemical vapor deposition using nickel aminoalkoxide precursor
KR101207381B1 (en) * 2006-11-01 2012-12-05 더 스테이트 오브 오레곤 액팅 바이 앤드 쓰루 더 스테이트 보드 오브 하이어 에쥬케이션 온 비해프 오브 오레곤 스테이트 유니버시티 Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture
CN101743255A (en) 2007-07-16 2010-06-16 霍夫曼-拉罗奇有限公司 Anti-cancer cytotoxic monoclonal antibodies
US20090226612A1 (en) 2007-10-29 2009-09-10 Satoko Ogawa Alkaline earth metal containing precursor solutions
CA2834809A1 (en) 2011-05-13 2012-11-22 Greencentre Canada Group 11 mono-metallic precursor compounds and use thereof in metal deposition
TWI615497B (en) 2013-02-28 2018-02-21 應用材料股份有限公司 Metal amide deposition precursor and stabilization of the precursor with an inert ampere lining
SG11201700491TA (en) 2014-08-04 2017-02-27 Basf Se Process for the generation of thin inorganic films

Also Published As

Publication number Publication date
KR20190046916A (en) 2019-05-07
CN109641927A (en) 2019-04-16
CN109641927B (en) 2023-01-10
US20190177844A1 (en) 2019-06-13
US11180852B2 (en) 2021-11-23
TW201819677A (en) 2018-06-01
EP3507293B1 (en) 2021-03-31
WO2018041695A1 (en) 2018-03-08
TWI757325B (en) 2022-03-11
EP3507293A1 (en) 2019-07-10
KR102467795B1 (en) 2022-11-18
SG11201900607WA (en) 2019-03-28

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