SG11201700491TA - Process for the generation of thin inorganic films - Google Patents

Process for the generation of thin inorganic films

Info

Publication number
SG11201700491TA
SG11201700491TA SG11201700491TA SG11201700491TA SG11201700491TA SG 11201700491T A SG11201700491T A SG 11201700491TA SG 11201700491T A SG11201700491T A SG 11201700491TA SG 11201700491T A SG11201700491T A SG 11201700491TA SG 11201700491T A SG11201700491T A SG 11201700491TA
Authority
SG
Singapore
Prior art keywords
generation
inorganic films
thin inorganic
thin
films
Prior art date
Application number
SG11201700491TA
Inventor
Julia Strautmann
Rocco Paciello
Thomas Schaub
Kerstin Schierle-Arndt
Daniel Löffler
Hagen Wilmer
Felix Eickemeyer
Florian Blasberg
Carolin Limburg
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201700491TA publication Critical patent/SG11201700491TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
SG11201700491TA 2014-08-04 2015-07-24 Process for the generation of thin inorganic films SG11201700491TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14179724 2014-08-04
PCT/EP2015/066981 WO2016020208A1 (en) 2014-08-04 2015-07-24 Process for the generation of thin inorganic films

Publications (1)

Publication Number Publication Date
SG11201700491TA true SG11201700491TA (en) 2017-02-27

Family

ID=51260778

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700491TA SG11201700491TA (en) 2014-08-04 2015-07-24 Process for the generation of thin inorganic films

Country Status (9)

Country Link
US (1) US10106888B2 (en)
EP (1) EP3177751B1 (en)
JP (1) JP6734841B2 (en)
KR (1) KR102429077B1 (en)
CN (1) CN106661728B (en)
IL (1) IL250145B (en)
SG (1) SG11201700491TA (en)
TW (1) TWI681071B (en)
WO (1) WO2016020208A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10450261B2 (en) 2015-05-28 2019-10-22 Basf Se Method for the homogeneous catalytic reductive amination of carbonyl compounds
PL3319951T3 (en) 2015-07-10 2022-02-28 Basf Se Method for the hydroformylation of 2-substituted butadienes and for the preparation of products derived from same, particularly from ambrox
US10647651B2 (en) 2015-10-12 2020-05-12 Basf Se Hydroformylation process for producing 1,6-disubstituted hexane derivatives
CN108495856A (en) 2016-01-27 2018-09-04 巴斯夫欧洲公司 The method for generating inorganic thin film
US10618873B2 (en) 2016-02-01 2020-04-14 Basf Se Method for producing C4-C15 lactams
CN109641927B (en) * 2016-08-31 2023-01-10 巴斯夫欧洲公司 Method for producing thin inorganic films
EP3957769A1 (en) * 2017-12-20 2022-02-23 Basf Se Process for the generation of metal-containing films
CN111954674B (en) * 2018-04-17 2023-09-29 巴斯夫欧洲公司 Aluminum precursors and methods of forming metal-containing films

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037997A (en) * 1988-02-23 1991-08-06 Institut Khimicheskoi Fiziki An Sssr Method of preparing 1-butene and/or hexenes
US6875523B2 (en) * 2001-07-05 2005-04-05 E. I. Du Pont De Nemours And Company Photoactive lanthanide complexes with phosphine oxides, phosphine oxide-sulfides, pyridine N-oxides, and phosphine oxide-pyridine N-oxides, and devices made with such complexes
US6863781B2 (en) * 2002-02-26 2005-03-08 Massachusetts Institute Of Technology Process for photocatalysis and two-electron mixed-valence complexes
KR101530502B1 (en) * 2002-11-15 2015-06-19 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 Atomic Layer Deposition Using Metal Amidinates
US7956168B2 (en) * 2006-07-06 2011-06-07 Praxair Technology, Inc. Organometallic compounds having sterically hindered amides
CA2687536C (en) * 2007-05-18 2018-07-03 Kanata Chemical Technologies Inc. Method for the production of hydrogen from ammonia borane
WO2009057058A1 (en) 2007-10-29 2009-05-07 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Alkaline earth metal containing precursor solutions
US20090275198A1 (en) * 2008-05-01 2009-11-05 Smuruthi Kamepalli Vapor Phase Methods for Forming Electrodes in Phase Change Memory Devices
US8632853B2 (en) 2010-10-29 2014-01-21 Applied Materials, Inc. Use of nitrogen-containing ligands in atomic layer deposition methods
US20130011579A1 (en) * 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
US9090641B2 (en) * 2012-03-09 2015-07-28 Applied Materials, Inc. Precursors and methods for the selective deposition of cobalt and manganese on metal surfaces
US9023427B2 (en) * 2012-05-16 2015-05-05 Asm Ip Holding B.V. Methods for forming multi-component thin films
KR20130139438A (en) 2012-06-05 2013-12-23 삼성디스플레이 주식회사 Thin film transistor array panel
US9434666B2 (en) * 2012-08-16 2016-09-06 Los Alamos National Security, Llc Catalytic hydrogenation using complexes of base metals with tridentate ligands
US20150073182A1 (en) * 2013-09-10 2015-03-12 Uop Llc Production of olefins from a methane conversion process

Also Published As

Publication number Publication date
US10106888B2 (en) 2018-10-23
IL250145A0 (en) 2017-03-30
EP3177751A1 (en) 2017-06-14
JP2017524072A (en) 2017-08-24
EP3177751B1 (en) 2020-10-07
CN106661728B (en) 2019-06-28
KR102429077B1 (en) 2022-08-04
IL250145B (en) 2021-02-28
CN106661728A (en) 2017-05-10
TWI681071B (en) 2020-01-01
TW201610212A (en) 2016-03-16
US20170233865A1 (en) 2017-08-17
JP6734841B2 (en) 2020-08-05
WO2016020208A1 (en) 2016-02-11
KR20170041230A (en) 2017-04-14

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