SG11202108041WA - Extreme ultraviolet mask blank with multilayer absorber and method of manufacture - Google Patents

Extreme ultraviolet mask blank with multilayer absorber and method of manufacture

Info

Publication number
SG11202108041WA
SG11202108041WA SG11202108041WA SG11202108041WA SG11202108041WA SG 11202108041W A SG11202108041W A SG 11202108041WA SG 11202108041W A SG11202108041W A SG 11202108041WA SG 11202108041W A SG11202108041W A SG 11202108041WA SG 11202108041W A SG11202108041W A SG 11202108041WA
Authority
SG
Singapore
Prior art keywords
manufacture
mask blank
extreme ultraviolet
ultraviolet mask
multilayer absorber
Prior art date
Application number
SG11202108041WA
Inventor
Wen Xiao
Vibhu Jindal
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202108041WA publication Critical patent/SG11202108041WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
SG11202108041WA 2019-03-01 2020-02-27 Extreme ultraviolet mask blank with multilayer absorber and method of manufacture SG11202108041WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962812599P 2019-03-01 2019-03-01
US16/801,635 US20200278603A1 (en) 2019-03-01 2020-02-26 Extreme Ultraviolet Mask Blank With Multilayer Absorber And Method Of Manufacture
PCT/US2020/020034 WO2020180586A1 (en) 2019-03-01 2020-02-27 Extreme ultraviolet mask blank with multilayer absorber and method of manufacture

Publications (1)

Publication Number Publication Date
SG11202108041WA true SG11202108041WA (en) 2021-09-29

Family

ID=72237236

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202108041WA SG11202108041WA (en) 2019-03-01 2020-02-27 Extreme ultraviolet mask blank with multilayer absorber and method of manufacture

Country Status (6)

Country Link
US (1) US20200278603A1 (en)
JP (1) JP7295260B2 (en)
KR (1) KR20210122909A (en)
SG (1) SG11202108041WA (en)
TW (1) TW202045350A (en)
WO (1) WO2020180586A1 (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283322A (en) * 1992-04-03 1993-10-29 Toshiba Corp Mask for exposure to x-ray
FR2884965B1 (en) * 2005-04-26 2007-06-08 Commissariat Energie Atomique ADJUSTABLE MASK WHITE STRUCTURE FOR EUV MASK WITH PHASE SHIFT
KR20080001023A (en) * 2006-06-29 2008-01-03 주식회사 에스앤에스텍 Reflective type euv blank mask and photomask and manufacturing method thereof
US8962220B2 (en) 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
KR101625382B1 (en) * 2010-04-29 2016-05-30 (주)에스앤에스텍 Reflective Type EUV Blankmask, Photomask and Its Manufacturing Method
US20140254001A1 (en) 2013-03-07 2014-09-11 Globalfoundries Inc. Fabry-perot thin absorber for euv reticle and a method of making
JP6408790B2 (en) 2013-05-31 2018-10-17 Hoya株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, MANUFACTURING METHOD THEREOF, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
KR20160002332A (en) * 2014-06-30 2016-01-07 주식회사 에스앤에스텍 Blankmask for Extreme Ultra-Violet Lithography and Photomask using the same
US9581889B2 (en) * 2014-07-11 2017-02-28 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
TWI730139B (en) 2016-07-27 2021-06-11 美商應用材料股份有限公司 Extreme ultraviolet mask blank with multilayer absorber and method of manufacture

Also Published As

Publication number Publication date
KR20210122909A (en) 2021-10-12
WO2020180586A1 (en) 2020-09-10
US20200278603A1 (en) 2020-09-03
TW202045350A (en) 2020-12-16
JP2022521769A (en) 2022-04-12
JP7295260B2 (en) 2023-06-20

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