SG11202107900VA - Method for pulling a cylindrical crystal from a melt - Google Patents
Method for pulling a cylindrical crystal from a meltInfo
- Publication number
- SG11202107900VA SG11202107900VA SG11202107900VA SG11202107900VA SG11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA SG 11202107900V A SG11202107900V A SG 11202107900VA
- Authority
- SG
- Singapore
- Prior art keywords
- melt
- pulling
- cylindrical crystal
- crystal
- cylindrical
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019101991.5A DE102019101991A1 (de) | 2019-01-28 | 2019-01-28 | Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze |
| PCT/DE2020/200007 WO2020156621A1 (fr) | 2019-01-28 | 2020-01-24 | Procédé pour le tirage d'un cristal cylindrique à partir d'une masse fondue |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202107900VA true SG11202107900VA (en) | 2021-08-30 |
Family
ID=69740080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202107900VA SG11202107900VA (en) | 2019-01-28 | 2020-01-24 | Method for pulling a cylindrical crystal from a melt |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US11965267B2 (fr) |
| EP (1) | EP3918116B1 (fr) |
| JP (1) | JP2022518921A (fr) |
| KR (1) | KR102698437B1 (fr) |
| CN (1) | CN113302344A (fr) |
| DE (2) | DE102019101991A1 (fr) |
| ES (1) | ES2955197T3 (fr) |
| HR (1) | HRP20231068T1 (fr) |
| PL (1) | PL3918116T3 (fr) |
| SG (1) | SG11202107900VA (fr) |
| WO (1) | WO2020156621A1 (fr) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4293395B2 (ja) * | 1999-04-28 | 2009-07-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Ｃｚ法単結晶インゴット製造装置及び方法 |
| WO2001057294A1 (fr) | 2000-02-01 | 2001-08-09 | Memc Electronic Materials, Inc. | Procede permettant de regler la croissance d'un cristal de silicium de maniere a reduire la vitesse de croissance et les variations de diametre |
| DE10119947A1 (de) * | 2001-04-24 | 2002-10-31 | Crystal Growing Systems Gmbh | Verfahren zum Steuern einer Kristallziehanlage und Kristallziehanlage zu seiner Durchführung |
| JP4457584B2 (ja) * | 2003-06-27 | 2010-04-28 | 信越半導体株式会社 | 単結晶の製造方法及び単結晶 |
| JP2005015313A (ja) * | 2003-06-27 | 2005-01-20 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
| JP2006203111A (ja) | 2005-01-24 | 2006-08-03 | Hosiden Corp | 物体検出センサ |
| DE102009056638B4 (de) * | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
| WO2012090172A1 (fr) * | 2010-12-30 | 2012-07-05 | Memc Electronic Materials, Inc. | Mesure d'une caractéristique de croissance cristalline à l'aide de multiples caméras |
| JP6078974B2 (ja) * | 2012-04-04 | 2017-02-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
| DE102013210687B4 (de) | 2013-06-07 | 2018-12-06 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
| KR101540863B1 (ko) * | 2013-12-17 | 2015-07-30 | 주식회사 엘지실트론 | 잉곳 직경 제어장치 및 이를 포함하는 잉곳성장장치 및 그 방법 |
| KR101571958B1 (ko) * | 2014-01-28 | 2015-11-25 | 주식회사 엘지실트론 | 잉곳성장장치 및 잉곳성장방법 |
-
2019
- 2019-01-28 DE DE102019101991.5A patent/DE102019101991A1/de not_active Withdrawn
-
2020
- 2020-01-24 KR KR1020217025325A patent/KR102698437B1/ko active IP Right Grant
- 2020-01-24 WO PCT/DE2020/200007 patent/WO2020156621A1/fr unknown
- 2020-01-24 SG SG11202107900VA patent/SG11202107900VA/en unknown
- 2020-01-24 HR HRP20231068TT patent/HRP20231068T1/hr unknown
- 2020-01-24 EP EP20708424.5A patent/EP3918116B1/fr active Active
- 2020-01-24 DE DE112020000539.9T patent/DE112020000539A5/de active Pending
- 2020-01-24 PL PL20708424.5T patent/PL3918116T3/pl unknown
- 2020-01-24 US US17/310,315 patent/US11965267B2/en active Active
- 2020-01-24 ES ES20708424T patent/ES2955197T3/es active Active
- 2020-01-24 JP JP2021543428A patent/JP2022518921A/ja active Pending
- 2020-01-24 CN CN202080011120.5A patent/CN113302344A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020156621A1 (fr) | 2020-08-06 |
| EP3918116C0 (fr) | 2023-06-07 |
| KR20210118413A (ko) | 2021-09-30 |
| HRP20231068T1 (hr) | 2023-12-22 |
| TW202035804A (zh) | 2020-10-01 |
| DE102019101991A1 (de) | 2020-07-30 |
| US20220098755A1 (en) | 2022-03-31 |
| JP2022518921A (ja) | 2022-03-17 |
| US11965267B2 (en) | 2024-04-23 |
| EP3918116B1 (fr) | 2023-06-07 |
| DE112020000539A5 (de) | 2021-10-21 |
| CN113302344A (zh) | 2021-08-24 |
| KR102698437B1 (ko) | 2024-08-26 |
| EP3918116A1 (fr) | 2021-12-08 |
| PL3918116T3 (pl) | 2023-11-27 |
| ES2955197T3 (es) | 2023-11-29 |
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