HRP20231068T1 - Postupak izvlačenja cilindričnog kristala iz taline - Google Patents
Postupak izvlačenja cilindričnog kristala iz taline Download PDFInfo
- Publication number
- HRP20231068T1 HRP20231068T1 HRP20231068TT HRP20231068T HRP20231068T1 HR P20231068 T1 HRP20231068 T1 HR P20231068T1 HR P20231068T T HRP20231068T T HR P20231068TT HR P20231068 T HRP20231068 T HR P20231068T HR P20231068 T1 HRP20231068 T1 HR P20231068T1
- Authority
- HR
- Croatia
- Prior art keywords
- crystal
- value
- height
- crucible
- annular gap
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims 11
- 239000000155 melt Substances 0.000 title claims 7
- 238000000034 method Methods 0.000 title claims 6
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Claims (5)
1. Postupak izvlačenja cilindričnog kristala (5) iz taline (2) korištenjem sustava za izvlačenje kristala, koja sadrži: lončić (3), u kojem se nalazi talina (2), grijač lončića (4), koji prstenasto okružuje lončić (3), uređaj za podizanje lončića (7) za podizanje lončića (3), uređaj za podizanje kristala (6) za izvlačenje kristala (5) iz taline (2) i toplinski štit (10) koji prstenasto okružuje kristal (5), čiji donji rub završava oblikovanjem prstenastog procjepa (12) iznad taline (2), naznačen time što je stvarna vrijednost promjera kristala mjerena na površini taline i uspoređuje se s referentnom vrijednošću promjera kristala,
što se visina prstenastog procjepa (12) postavlja ovisno o odmaku između stvarne i referentne vrijednosti s prvim regulatorom, koji prikazuje prvo vrijeme podešavanja, pri čemu se kod stvarne vrijednosti, koja je manja od referentne vrijednosti, visina prstenastog procjepa smanjuje i kod stvarne vrijednosti, koja je veća od referentne vrijednosti, visina prstenastog procjepa povećava, i
što se za promjenu visine prstenastog procjepa brzina podizanja lončića (3) i u istoj mjeri brzina podizanja kristala (5) mogu mijenjati, kako bi brzina izvlačenja kristala ostala nepromjenjiva.
2. Postupak prema patentnom zahtjevu 1, naznačen time što se za brzinu podizanja (14) lončića postavlja temeljna vrijednost, koja nadomješta volumensku potrošnju taline (2), što se postavlja temeljna vrijednost za brzinu (13) podizanja kristala i što se za podešavanje visine prstenastog procjepa objema temeljnim vrijednostima dodaje jednaka vrijednost pomaka.
3. Postupak prema patentnom zahtjevu 1 ili 2, naznačen time što se namještena vrijednost visine prstenastog procjepa dovodi kao stvarna vrijednost za podešavanje snage grijanja grijača lončića (4) putem drugog regulatora, koji prikazuje drugo vrijeme podešavanja, pri čemu se kao namještena vrijednost zadaje srednja visina prstenastog procjepa.
4. Postupak prema jednom od prethodnih patentnih zahtjeva, naznačen time što je prvo vrijeme podešavanja manje od drugog vremena podešavanja.
5. Postupak prema patentnom zahtjevu 3 ili 4, naznačen time što se namještena vrijednost visine prstenastog procjepa dovodi regulatoru snage grijanja (28) kao stvarna vrijednost putem PT1-filtra (40).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019101991.5A DE102019101991A1 (de) | 2019-01-28 | 2019-01-28 | Verfahren zum Ziehen eines zylindrischen Kristalls aus einer Schmelze |
| PCT/DE2020/200007 WO2020156621A1 (de) | 2019-01-28 | 2020-01-24 | Verfahren zum ziehen eines zylindrischen kristalls aus einer schmelze |
| EP20708424.5A EP3918116B1 (de) | 2019-01-28 | 2020-01-24 | Verfahren zum ziehen eines zylindrischen kristalls aus einer schmelze |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HRP20231068T1 true HRP20231068T1 (hr) | 2023-12-22 |
Family
ID=69740080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HRP20231068TT HRP20231068T1 (hr) | 2019-01-28 | 2020-01-24 | Postupak izvlačenja cilindričnog kristala iz taline |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US11965267B2 (hr) |
| EP (1) | EP3918116B1 (hr) |
| JP (1) | JP2022518921A (hr) |
| KR (1) | KR102698437B1 (hr) |
| CN (1) | CN113302344A (hr) |
| DE (2) | DE102019101991A1 (hr) |
| ES (1) | ES2955197T3 (hr) |
| HR (1) | HRP20231068T1 (hr) |
| PL (1) | PL3918116T3 (hr) |
| SG (1) | SG11202107900VA (hr) |
| WO (1) | WO2020156621A1 (hr) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4293395B2 (ja) * | 1999-04-28 | 2009-07-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Ｃｚ法単結晶インゴット製造装置及び方法 |
| CN1396965A (zh) * | 2000-02-01 | 2003-02-12 | Memc电子材料有限公司 | 用于控制硅晶体生长使生长速率和直径的偏差减至最小的方法 |
| DE10119947A1 (de) * | 2001-04-24 | 2002-10-31 | Crystal Growing Systems Gmbh | Verfahren zum Steuern einer Kristallziehanlage und Kristallziehanlage zu seiner Durchführung |
| JP4457584B2 (ja) * | 2003-06-27 | 2010-04-28 | 信越半導体株式会社 | 単結晶の製造方法及び単結晶 |
| JP2005015313A (ja) | 2003-06-27 | 2005-01-20 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
| JP2006203111A (ja) | 2005-01-24 | 2006-08-03 | Hosiden Corp | 物体検出センサ |
| DE102009056638B4 (de) | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
| JP5859566B2 (ja) * | 2010-12-30 | 2016-02-10 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭｅｍｃ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 多数のカメラを用いる結晶の成長特性計測方法 |
| JP6078974B2 (ja) | 2012-04-04 | 2017-02-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
| DE102013210687B4 (de) | 2013-06-07 | 2018-12-06 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
| KR101540863B1 (ko) * | 2013-12-17 | 2015-07-30 | 주식회사 엘지실트론 | 잉곳 직경 제어장치 및 이를 포함하는 잉곳성장장치 및 그 방법 |
| KR101571958B1 (ko) * | 2014-01-28 | 2015-11-25 | 주식회사 엘지실트론 | 잉곳성장장치 및 잉곳성장방법 |
-
2019
- 2019-01-28 DE DE102019101991.5A patent/DE102019101991A1/de not_active Withdrawn
-
2020
- 2020-01-24 DE DE112020000539.9T patent/DE112020000539A5/de active Pending
- 2020-01-24 SG SG11202107900VA patent/SG11202107900VA/en unknown
- 2020-01-24 PL PL20708424.5T patent/PL3918116T3/pl unknown
- 2020-01-24 HR HRP20231068TT patent/HRP20231068T1/hr unknown
- 2020-01-24 WO PCT/DE2020/200007 patent/WO2020156621A1/de unknown
- 2020-01-24 ES ES20708424T patent/ES2955197T3/es active Active
- 2020-01-24 KR KR1020217025325A patent/KR102698437B1/ko active IP Right Grant
- 2020-01-24 CN CN202080011120.5A patent/CN113302344A/zh active Pending
- 2020-01-24 EP EP20708424.5A patent/EP3918116B1/de active Active
- 2020-01-24 US US17/310,315 patent/US11965267B2/en active Active
- 2020-01-24 JP JP2021543428A patent/JP2022518921A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020156621A1 (de) | 2020-08-06 |
| CN113302344A (zh) | 2021-08-24 |
| TW202035804A (zh) | 2020-10-01 |
| EP3918116C0 (de) | 2023-06-07 |
| EP3918116A1 (de) | 2021-12-08 |
| JP2022518921A (ja) | 2022-03-17 |
| KR102698437B1 (ko) | 2024-08-26 |
| KR20210118413A (ko) | 2021-09-30 |
| PL3918116T3 (pl) | 2023-11-27 |
| DE102019101991A1 (de) | 2020-07-30 |
| US20220098755A1 (en) | 2022-03-31 |
| ES2955197T3 (es) | 2023-11-29 |
| EP3918116B1 (de) | 2023-06-07 |
| SG11202107900VA (en) | 2021-08-30 |
| DE112020000539A5 (de) | 2021-10-21 |
| US11965267B2 (en) | 2024-04-23 |
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