SG11202107030XA - Physical vapor deposition target assembly - Google Patents

Physical vapor deposition target assembly

Info

Publication number
SG11202107030XA
SG11202107030XA SG11202107030XA SG11202107030XA SG11202107030XA SG 11202107030X A SG11202107030X A SG 11202107030XA SG 11202107030X A SG11202107030X A SG 11202107030XA SG 11202107030X A SG11202107030X A SG 11202107030XA SG 11202107030X A SG11202107030X A SG 11202107030XA
Authority
SG
Singapore
Prior art keywords
vapor deposition
physical vapor
target assembly
deposition target
assembly
Prior art date
Application number
SG11202107030XA
Inventor
Wen Xiao
Sanjay Bhat
Shuwei Liu
Vibhu Jindal
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202107030XA publication Critical patent/SG11202107030XA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52Reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3417Arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3441Dark space shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG11202107030XA 2019-01-25 2020-01-24 Physical vapor deposition target assembly SG11202107030XA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962796777P 2019-01-25 2019-01-25
US16/750,586 US20200241409A1 (en) 2019-01-25 2020-01-23 Physical Vapor Deposition Target Assembly
PCT/US2020/014930 WO2020154582A1 (en) 2019-01-25 2020-01-24 Physical vapor deposition target assembly

Publications (1)

Publication Number Publication Date
SG11202107030XA true SG11202107030XA (en) 2021-08-30

Family

ID=71731188

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202107030XA SG11202107030XA (en) 2019-01-25 2020-01-24 Physical vapor deposition target assembly

Country Status (7)

Country Link
US (1) US20200241409A1 (en)
JP (1) JP7365417B2 (en)
KR (1) KR20210107907A (en)
CN (1) CN113330139A (en)
SG (1) SG11202107030XA (en)
TW (1) TWI788618B (en)
WO (1) WO2020154582A1 (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4101524B2 (en) 2002-02-05 2008-06-18 芝浦メカトロニクス株式会社 Deposition equipment
JP4336206B2 (en) * 2004-01-07 2009-09-30 Hoya株式会社 Mask blank manufacturing method and mask blank manufacturing sputtering target
JP2005264177A (en) * 2004-03-16 2005-09-29 Renesas Technology Corp Sputtering apparatus, and upper shield position adjusting method of the same
WO2009134916A2 (en) * 2008-04-29 2009-11-05 Applied Materials, Inc. Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8992747B2 (en) 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
US9834840B2 (en) * 2010-05-14 2017-12-05 Applied Materials, Inc. Process kit shield for improved particle reduction
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
US9633824B2 (en) * 2013-03-05 2017-04-25 Applied Materials, Inc. Target for PVD sputtering system
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US8865012B2 (en) * 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
WO2016088284A1 (en) 2014-12-03 2016-06-09 株式会社アルバック Target assembly
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
US10325763B2 (en) * 2017-01-20 2019-06-18 Applied Materials, Inc. Physical vapor deposition processing systems target cooling

Also Published As

Publication number Publication date
JP7365417B2 (en) 2023-10-19
CN113330139A (en) 2021-08-31
TW202031920A (en) 2020-09-01
WO2020154582A1 (en) 2020-07-30
US20200241409A1 (en) 2020-07-30
JP2022518037A (en) 2022-03-11
KR20210107907A (en) 2021-09-01
TWI788618B (en) 2023-01-01

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