SG11202102970TA - Sputtering target and method for producing same - Google Patents

Sputtering target and method for producing same

Info

Publication number
SG11202102970TA
SG11202102970TA SG11202102970TA SG11202102970TA SG11202102970TA SG 11202102970T A SG11202102970T A SG 11202102970TA SG 11202102970T A SG11202102970T A SG 11202102970TA SG 11202102970T A SG11202102970T A SG 11202102970TA SG 11202102970T A SG11202102970T A SG 11202102970TA
Authority
SG
Singapore
Prior art keywords
sputtering target
producing same
producing
same
sputtering
Prior art date
Application number
SG11202102970TA
Inventor
Daiki Shono
Shuhei Murata
Takeo Okabe
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11202102970TA publication Critical patent/SG11202102970TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/02—Plasma welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/0046—Welding
    • B23K15/0053—Seam welding
    • B23K15/006—Seam welding of rectilinear seams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/04—Electron-beam welding or cutting for welding annular seams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B23K26/24—Seam welding
    • B23K26/26—Seam welding of rectilinear seams
    • B23K26/262—Seam welding of rectilinear seams of longitudinal seams of tubes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
SG11202102970TA 2018-09-26 2019-09-20 Sputtering target and method for producing same SG11202102970TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018180531 2018-09-26
PCT/JP2019/037135 WO2020066956A1 (en) 2018-09-26 2019-09-20 Sputtering target and method for producing same

Publications (1)

Publication Number Publication Date
SG11202102970TA true SG11202102970TA (en) 2021-04-29

Family

ID=69952141

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202102970TA SG11202102970TA (en) 2018-09-26 2019-09-20 Sputtering target and method for producing same

Country Status (8)

Country Link
US (1) US20220049346A1 (en)
EP (1) EP3859047A4 (en)
JP (1) JP7455750B2 (en)
KR (1) KR20210047343A (en)
CN (1) CN112805401A (en)
SG (1) SG11202102970TA (en)
TW (2) TW202024372A (en)
WO (1) WO2020066956A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115505885A (en) * 2022-09-07 2022-12-23 有研稀土新材料股份有限公司 Co-sputtering rare earth rotating target material, preparation method and application method thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07228966A (en) * 1994-02-16 1995-08-29 Mitsubishi Materials Corp Production of long-sized chromium cylinder target
JP3413782B2 (en) * 1995-03-31 2003-06-09 日立金属株式会社 Titanium target for sputtering and method for producing the same
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JP4422975B2 (en) * 2003-04-03 2010-03-03 株式会社コベルコ科研 Sputtering target and manufacturing method thereof
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
AT8697U1 (en) * 2005-10-14 2006-11-15 Plansee Se TUBE TARGET
WO2007080750A1 (en) * 2006-01-13 2007-07-19 Osaka Titanium Technologies Co., Ltd. Process for production of titanium material for sputtering
WO2007110172A1 (en) * 2006-03-23 2007-10-04 W. C. Heraeus Gmbh Tubular target
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
KR20100116213A (en) * 2008-02-29 2010-10-29 신닛테츠 마테리알즈 가부시키가이샤 Metallic sputtering target material
JP5482020B2 (en) * 2008-09-25 2014-04-23 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof
CN102791905B (en) * 2010-03-11 2015-04-01 株式会社东芝 Sputtering target, method for producing same and method for producing semiconductor device
JP2013133490A (en) * 2011-12-26 2013-07-08 Tokuriki Honten Co Ltd Cylindrical sputtering target and method for producing the same
JP2014105383A (en) * 2012-11-29 2014-06-09 Tosoh Corp Cylindrical type sputtering target and manufacturing method of the same
WO2014131458A1 (en) * 2013-02-28 2014-09-04 Applied Materials, Inc. Gapless rotary target and method of manufacturing thereof
US9922807B2 (en) * 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof
JP6491859B2 (en) 2013-11-25 2019-03-27 株式会社フルヤ金属 Sputtering target manufacturing method and sputtering target
JP5783293B1 (en) * 2014-04-22 2015-09-24 三菱マテリアル株式会社 Material for cylindrical sputtering target
WO2017115648A1 (en) * 2015-12-28 2017-07-06 Ｊｘ金属株式会社 Method for manufacturing sputtering target
JP2018053366A (en) 2017-10-24 2018-04-05 住友化学株式会社 Cylindrical target

Also Published As

Publication number Publication date
EP3859047A1 (en) 2021-08-04
US20220049346A1 (en) 2022-02-17
TW202348823A (en) 2023-12-16
KR20210047343A (en) 2021-04-29
WO2020066956A1 (en) 2020-04-02
TW202024372A (en) 2020-07-01
CN112805401A (en) 2021-05-14
JP7455750B2 (en) 2024-03-26
JPWO2020066956A1 (en) 2021-09-24
EP3859047A4 (en) 2022-06-29

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