SG11202008892PA - Sputtering target and method for producing sputtering target - Google Patents

Sputtering target and method for producing sputtering target

Info

Publication number
SG11202008892PA
SG11202008892PA SG11202008892PA SG11202008892PA SG11202008892PA SG 11202008892P A SG11202008892P A SG 11202008892PA SG 11202008892P A SG11202008892P A SG 11202008892PA SG 11202008892P A SG11202008892P A SG 11202008892PA SG 11202008892P A SG11202008892P A SG 11202008892PA
Authority
SG
Singapore
Prior art keywords
sputtering target
producing
target
producing sputtering
sputtering
Prior art date
Application number
SG11202008892PA
Inventor
Keijiro Sugimoto
Shuhei Murata
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11202008892PA publication Critical patent/SG11202008892PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/20—Refractory metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00—Physical aspects of the powder
    • B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11202008892PA 2018-03-13 2019-03-12 Sputtering target and method for producing sputtering target SG11202008892PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018045836 2018-03-13
PCT/JP2019/010094 WO2019176962A1 (en) 2018-03-13 2019-03-12 Sputtering target and method for producing sputtering target

Publications (1)

Publication Number Publication Date
SG11202008892PA true SG11202008892PA (en) 2020-10-29

Family

ID=67907888

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202008892PA SG11202008892PA (en) 2018-03-13 2019-03-12 Sputtering target and method for producing sputtering target

Country Status (6)

Country Link
US (1) US20210040601A1 (en)
JP (3) JP7246370B2 (en)
KR (2) KR20230170144A (en)
CN (1) CN111836914A (en)
SG (1) SG11202008892PA (en)
WO (1) WO2019176962A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7394249B1 (en) * 2023-05-15 2023-12-07 株式会社アルバック Molybdenum target and its manufacturing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3609682B2 (en) 1991-01-25 2005-01-12 株式会社東芝 Manufacturing method of semiconductor device
JPH04218912A (en) * 1991-03-20 1992-08-10 Nippon Telegr & Teleph Corp <Ntt> Manufacture of high purity molybdenum target and high purity molybdenum silicide target for lsi electrode
JPH09272970A (en) * 1996-04-05 1997-10-21 Japan Energy Corp High purity cobalt sputtering target and its manufacture
JP3127834B2 (en) * 1996-08-21 2001-01-29 三菱マテリアル株式会社 Sputtering target for high dielectric film formation
US6713391B2 (en) * 1997-07-11 2004-03-30 Honeywell International Inc. Physical vapor deposition targets
JP2001295035A (en) 2000-04-11 2001-10-26 Toshiba Corp Sputtering target and its manufacturing method
JP4921653B2 (en) * 2001-08-13 2012-04-25 株式会社東芝 Sputtering target and manufacturing method thereof
JP4475398B2 (en) * 2003-09-16 2010-06-09 日本新金属株式会社 Method for producing high-purity high-density metal Mo sintered target for sputtering that enables formation of high-purity metal Mo thin film with very few particles
US7534282B2 (en) * 2003-09-16 2009-05-19 Japan New Metals Co., Ltd. High purity metal Mo coarse powder and sintered sputtering target produced by thereof
JP4345560B2 (en) 2003-09-16 2009-10-14 日本新金属株式会社 Method for producing high-purity metal Mo coarse powder suitable for use as a raw material powder in the production of sputtering high-purity metal Mo sintered target
JP4470036B2 (en) * 2003-11-21 2010-06-02 東ソー株式会社 Sputtering target, method for producing the same, and thin film produced using the same
US8088232B2 (en) * 2004-08-31 2012-01-03 H.C. Starck Inc. Molybdenum tubular sputtering targets with uniform grain size and texture
KR20070091274A (en) * 2004-11-18 2007-09-10 허니웰 인터내셔널 인코포레이티드 Methods of forming three-demensional pvd targets
AT8697U1 (en) * 2005-10-14 2006-11-15 Plansee Se TUBE TARGET
JP5550328B2 (en) 2009-12-22 2014-07-16 株式会社東芝 Mo sputtering target and manufacturing method thereof
JP5944482B2 (en) 2012-03-02 2016-07-05 Ｊｘ金属株式会社 Tungsten sintered sputtering target and tungsten film formed using the target

Also Published As

Publication number Publication date
KR20200129143A (en) 2020-11-17
KR20230170144A (en) 2023-12-18
CN111836914A (en) 2020-10-27
JPWO2019176962A1 (en) 2021-02-12
JP2023165778A (en) 2023-11-17
WO2019176962A1 (en) 2019-09-19
KR102612744B1 (en) 2023-12-13
US20210040601A1 (en) 2021-02-11
JP7246370B2 (en) 2023-03-27
JP2022125041A (en) 2022-08-26

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