SG11202012910YA - Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate - Google Patents

Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate

Info

Publication number
SG11202012910YA
SG11202012910YA SG11202012910YA SG11202012910YA SG11202012910YA SG 11202012910Y A SG11202012910Y A SG 11202012910YA SG 11202012910Y A SG11202012910Y A SG 11202012910YA SG 11202012910Y A SG11202012910Y A SG 11202012910YA SG 11202012910Y A SG11202012910Y A SG 11202012910YA
Authority
SG
Singapore
Prior art keywords
ingot
producing
methods
moving average
pull rate
Prior art date
Application number
SG11202012910YA
Inventor
Chun-Sheng Wu
Feng-Chien Tsai
Chi-Yung Chen
Yeong-Ming Sheu
Hsien-Ta Tseng
Zheng Lu
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202012910YA publication Critical patent/SG11202012910YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202012910YA 2018-06-28 2019-06-25 Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate SG11202012910YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/021,948 US20200002838A1 (en) 2018-06-28 2018-06-28 Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate
PCT/US2019/038933 WO2020005909A1 (en) 2018-06-28 2019-06-25 Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate

Publications (1)

Publication Number Publication Date
SG11202012910YA true SG11202012910YA (en) 2021-01-28

Family

ID=67263098

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202012910YA SG11202012910YA (en) 2018-06-28 2019-06-25 Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate

Country Status (7)

Country Link
US (1) US20200002838A1 (en)
EP (1) EP3814556A1 (en)
JP (1) JP2021528356A (en)
KR (1) KR20210044189A (en)
CN (1) CN112368428A (en)
SG (1) SG11202012910YA (en)
WO (1) WO2020005909A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11767611B2 (en) 2020-07-24 2023-09-26 Globalwafers Co., Ltd. Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
GB8325544D0 (en) * 1983-09-23 1983-10-26 Howe S H Orienting crystals
FI911857A (en) * 1990-04-27 1991-10-28 Nippon Kokan Kk FOERFARANDE OCH APPARAT FOER KONTROLL AV DIAMETERN HOS EN ENSKILD SILIKONKRISTALL.
JPH09221386A (en) * 1996-02-08 1997-08-26 Komatsu Electron Metals Co Ltd Device for pulling up signal crystal
JP3528448B2 (en) * 1996-07-23 2004-05-17 信越半導体株式会社 Single crystal pulling method and apparatus
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
JP2003124219A (en) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp Silicon wafer and epitaxial silicon wafer
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
JP5562776B2 (en) * 2010-09-16 2014-07-30 グローバルウェーハズ・ジャパン株式会社 Single crystal pulling apparatus and single crystal pulling method
KR101674287B1 (en) * 2015-01-21 2016-11-08 주식회사 엘지실트론 Diameter Controlling System of Single Crystal Ingot and Method controlling the Same
US10472732B2 (en) * 2015-09-30 2019-11-12 Sumco Corporation Method for manufacturing single crystal

Also Published As

Publication number Publication date
EP3814556A1 (en) 2021-05-05
JP2021528356A (en) 2021-10-21
KR20210044189A (en) 2021-04-22
US20200002838A1 (en) 2020-01-02
TW202014564A (en) 2020-04-16
WO2020005909A1 (en) 2020-01-02
CN112368428A (en) 2021-02-12

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