JP3528448B2 - Single crystal pulling method and apparatus - Google Patents

Single crystal pulling method and apparatus

Info

Publication number
JP3528448B2
JP3528448B2 JP21205596A JP21205596A JP3528448B2 JP 3528448 B2 JP3528448 B2 JP 3528448B2 JP 21205596 A JP21205596 A JP 21205596A JP 21205596 A JP21205596 A JP 21205596A JP 3528448 B2 JP3528448 B2 JP 3528448B2
Authority
JP
Japan
Prior art keywords
single crystal
pulling
lifting
tool
lifting tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP21205596A
Other languages
Japanese (ja)
Other versions
JPH1036187A (en
Inventor
雅彦 浦野
泰志 中村
誠一郎 大塚
栄一 飯野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP21205596A priority Critical patent/JP3528448B2/en
Priority to US08/883,046 priority patent/US5879448A/en
Priority to TW086109114A priority patent/TW567253B/en
Priority to DE69724886T priority patent/DE69724886T2/en
Priority to EP97304827A priority patent/EP0821083B1/en
Priority to KR1019970034543A priority patent/KR980009530A/en
Publication of JPH1036187A publication Critical patent/JPH1036187A/en
Application granted granted Critical
Publication of JP3528448B2 publication Critical patent/JP3528448B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1072Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えばチョクラル
スキー法(CZ法)の単結晶引上げ方法及び装置に係
り、特に重量の重い単結晶を安全に且つ高品質に製造す
るための改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a Czochralski method (CZ method) for pulling a single crystal and, more particularly, to an improvement for safely manufacturing a heavy single crystal with high quality.

【0002】[0002]

【従来の技術】従来、シリコン等の半導体材料の融液を
収容したルツボから単結晶を引上げ形成する方法とし
て、本出願人は例えば特願平7−256892号のよう
な引上げ改良技術を先に提案した。この技術による単結
晶の引上げ方法は、図6に示すように、吊り具51に吊
持される種結晶52を原料融液53に接触させ、吊り具
昇降機構部54によって種結晶52を引上げることで単
結晶部55を成長させるような製造方法において、スラ
イダ移動機構部56によって上下動自在なスライダ57
上に、垂直軸まわりに回転自在な保持ケース58を取付
け、この保持ケース58内に吊り具昇降機構部54を設
けて、ワイヤ60によって吊り具51を引上げることが
出来るようにされるとともに、保持ケース58には、下
端側の係着部61a、61aが開閉自在な吊持具61、
61を取付け、吊り具51と吊持具61の両者によって
単結晶部55を引上げるようにしている。
2. Description of the Related Art Conventionally, as a method for pulling and forming a single crystal from a crucible containing a melt of a semiconductor material such as silicon, the present applicant has first proposed a pulling improvement technique such as Japanese Patent Application No. 7-256892. Proposed. In the method of pulling a single crystal by this technique, as shown in FIG. 6, a seed crystal 52 hung on a hanging tool 51 is brought into contact with a raw material melt 53, and a lifting tool elevating mechanism 54 pulls up the seed crystal 52. Thus, in the manufacturing method in which the single crystal part 55 is grown, the slider 57 that can be moved up and down by the slider moving mechanism part 56 is used.
A holding case 58 rotatable around a vertical axis is attached to the upper part, and a lifting tool elevating mechanism 54 is provided in the holding case 58 so that the lifting tool 51 can be pulled up by a wire 60. The holding case 58 has a lower end engaging portion 61a, a lifting tool 61 that can open and close,
61 is attached, and the single crystal part 55 is pulled up by both the hanging tool 51 and the lifting tool 61.

【0003】すなわち、当初はスライダ57の位置を固
定して吊り具51で吊持する種結晶52を原料融液53
に接触させ、保持ケース58を回転させながら吊り具昇
降機構部54によって吊り具51を引上げると、種結晶
52の下方にはネック部62に引続いて凹凸部63が形
成され、続いて単結晶部55が成形される。そして、凹
凸部63が所定の位置まで上昇すると、吊持具61、6
1が作動して下端の係着部61a、61aが凹凸部63
の凹部に係合し、その後、スライダ移動機構部56が作
動してスライダ57が上昇を開始する。
That is, at the beginning, the seed crystal 52, which is initially held at a fixed position of the slider 57 and is hung by the hanger 51, is used as the raw material melt 53.
When the lifting tool 51 is pulled up by the lifting tool elevating mechanism section 54 while rotating the holding case 58, the unevenness section 63 is formed under the seed crystal 52, following the neck section 62, and subsequently, a single piece. The crystal part 55 is molded. Then, when the uneven portion 63 rises to a predetermined position, the lifting tools 61, 6
1 operates and the engaging portions 61a, 61a at the lower end are uneven portions 63.
After that, the slider moving mechanism 56 is operated and the slider 57 starts to move up.

【0004】この際、スライダ57の上昇速度と、スラ
イダ57に対する吊り具51の相対的な上昇速度の加算
値が、それまでの吊り具51だけの時の上昇速度と同じ
速度になるように制御され、スライダ57の上昇速度は
徐々に上がり、これに連れて吊り具51の上昇速度は徐
々に下がる。そして、最終的に吊り具51による引上げ
速度はゼロとなって吊持具61、61だけの引上げに切
り替えられる。そしてこのような引上げ方法を採用する
ことにより、単結晶部55が大径化、高重量化してもネ
ック部62が破損したりするようなことがなく、安全且
つ確実に引上げることが出来るというものである。
At this time, the sum of the ascending speed of the slider 57 and the ascending speed of the sling 51 relative to the slider 57 is controlled to be the same as the ascending speed of the sling 51 alone. As a result, the rising speed of the slider 57 gradually increases, and the rising speed of the hanging tool 51 gradually decreases accordingly. Finally, the lifting speed of the lifting tool 51 becomes zero and the lifting tool 61, 61 is switched to the lifting speed only. By adopting such a pulling method, even if the diameter of the single crystal portion 55 is increased and the weight thereof is increased, the neck portion 62 is not damaged and the pulling can be performed safely and reliably. It is a thing.

【0005】[0005]

【発明が解決しようとする課題】ところが、上記のよう
な技術は、吊持具61、61で凹凸部63を保持する
際、横方向から挟みこむように接触するため、単結晶に
横方向の力が加わりやすく、単結晶部55が揺れて有転
位化の原因になりやすいという問題があった。また、吊
り具51から吊持具61、61に切り替えて引上げる
際、吊り具51に掛かる荷重をゼロまで弛めると、上方
のワイヤが弛んでネック部62に損傷を招きやすかっ
た。
However, in the technique as described above, when holding the uneven portion 63 by the lifting jigs 61, 61, since the contact is made so as to be sandwiched from the lateral direction, a force in the lateral direction is applied to the single crystal. However, there is a problem in that the single crystal part 55 is swayed and is likely to cause dislocation. Moreover, when switching from the suspending tool 51 to the suspending tools 61, 61 and pulling up, if the load applied to the suspending tool 51 is relaxed to zero, the upper wire is slackened and the neck portion 62 is likely to be damaged.

【0006】また、従来一般の単結晶引上げ機構が1つ
の装置の場合は、1つの引上げ機構の引上げ検出距離を
測定すれば、測定値がそのまま吊り具51の位置とな
り、また単結晶の引上げ長さとなっていたが、前記技術
のように引上げ機構が2つになると、両者の引上げ長さ
を検出して合算して求める必要がある反面、ワイヤが弛
んだりすると、吊り具51側の正確な引上げ長さを測定
するのが難しく、これら検出値に基づく算定値に誤差が
出やすいという問題もあった。更に、吊り具51の引上
げから吊持具61、61の引上げに切り替える際も、直
径制御のため吊り具51の引上げ速度を変化させている
ため、吊持具61、61に切り替わるまでの時間等の条
件が安定しないという問題もあった。
Further, in the case where the conventional general single crystal pulling mechanism is one device, if the pulling detection distance of one pulling mechanism is measured, the measured value becomes the position of the hanging tool 51 and the pulling length of the single crystal. However, when the number of pulling mechanisms is two as in the above-mentioned technique, it is necessary to detect the pulling lengths of the two and add them together. There is also a problem that it is difficult to measure the pulling length, and an error is likely to occur in the calculated value based on these detected values. Furthermore, even when switching from lifting of the lifting tool 51 to lifting of the lifting tools 61, 61, since the lifting speed of the lifting tool 51 is changed for diameter control, the time until switching to the lifting tools 61, 61, etc. There was also a problem that the condition of was not stable.

【0007】以上のようなことから、吊持具61、61
で保持する際、横方向に力を加えず静かに保持すること
が出来、引上げ手段が吊り具51から吊持具61、61
に移行した後も吊り具51上方のワイヤが弛むことがな
く、更に単結晶の引上げ長さを正確に求めることの出来
る手段が望まれていた。
From the above, the suspenders 61, 61
When it is held by, it can be held quietly without applying a force in the lateral direction, and the pulling means moves from the lifting tool 51 to the lifting tools 61, 61.
There has been a demand for a means capable of accurately obtaining the pulling length of a single crystal without the wire above the hanging tool 51 slackening even after shifting to (4).

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
本発明は吊り具によって吊持される種結晶の下方に、
順次、第1ネック部、凸部、第2ネック部を形成し、こ
れに引続いて拡径部、直胴部を有する単結晶を成長させ
るとともに、前記吊り具による引上げ途中で第2ネック
部が所定の位置まで引上げられた時点で、吊持具を第2
ネック部の周囲に非接触近接状態で臨ませ、次いで、単
結晶と吊持具を上下方向に相対移動させ、凸部を吊持具
の上部に載せるように接触させて吊持具で凸部を保持し
た後、吊り具に掛かる荷重の一部を吊持具に移行し、以
降の引上げを吊持具にて行うようにした。
In order to solve the above-mentioned problems, the present invention provides , below a seed crystal suspended by a suspender,
A first neck portion, a convex portion, and a second neck portion are sequentially formed, and subsequently, a single crystal having a diameter-expanded portion and a straight body portion is grown, and at the same time, the second neck portion is pulled up by the suspending tool. The second lifting tool when the
Face the neck part in a non-contact proximity state, then move the single crystal and the lifting tool relative to each other in the vertical direction, and contact the protrusion so that it sits on top of the lifting tool, After holding, a part of the load applied to the hanger was transferred to the hanger, and subsequent lifting was performed by the hanger.

【0009】このように第2ネック部が所定の位置まで
引上げられた時に、この第2ネック部の周囲を吊持具で
取り囲むように非接触状態で臨ませ、次いで、第2ネッ
ク部の上部に位置する凸部を相対的に降下させ、吊持具
上に載せるように上下方向から接触させ保持させる。こ
のため、単結晶に横方向から力が加わらず、有転位化等
の不具合が生じにくくなる。また、この引上げ移行の
際、吊持具に全荷重を移行せず、吊り具に一部の荷重を
残すことでワイヤの弛みを防止する。
When the second neck portion is pulled up to the predetermined position in this manner, the periphery of the second neck portion is exposed in a non-contact state so as to be surrounded by a suspending tool, and then the upper portion of the second neck portion is covered. The convex portion located at is relatively lowered, and is contacted and held in the vertical direction so as to be placed on the hanging tool. Therefore, no force is applied to the single crystal from the lateral direction, and it becomes difficult for defects such as dislocation to occur. Further, at the time of this transition of pulling up, the slack of the wire is prevented by not transferring the entire load to the hanger and leaving a part of the load on the hanger.

【0010】また前記凸部と第2ネック部は、単結晶
の引上げ速度又はルツボ内の融液温度の少なくとも一方
を制御することで意図的に形成するようにし第1ネッ
ク部と凸部と第2ネック部は、その直径を所望の径にす
るため、単結晶の引上げ速度又はルツボ内の融液温度の
少なくとも一方を自動制御することにより形成するよう
にした。
Further, the convex portion and the second neck portion, so as to intentionally formed by controlling at least one of the melt temperature of the pulling speed or the crucible of the single crystal, the first neck portion and the convex portion The second neck portion is formed by automatically controlling at least one of the pulling rate of the single crystal and the melt temperature in the crucible so that the diameter of the second neck portion becomes a desired diameter.

【0011】そして、第1ネック部に引続く凸部は、吊
持具上に載せることの出来る大きさに意図的に形成し、
第2ネック部は引上げ結晶重量に耐え得る太さで且つ凸
部より小径に意図的に形成する。そして、これらは単結
晶の引上げ速度とルツボ内の融液温度の両者の制御、又
はいずれか一方を制御することによって成形することが
出来る。
Then, the convex portion continuing from the first neck portion is intentionally formed to have a size that can be placed on the suspension,
The second neck portion is intentionally formed to have a thickness that can withstand the weight of the pulled crystal and a diameter smaller than that of the convex portion. These can be formed by controlling both the pulling rate of the single crystal and the melt temperature in the crucible, or by controlling either one of them.

【0012】また単結晶の引上げを前記吊り具から吊
持具に切り替える際の単結晶の引上げ速度Vを一定にな
るように制御し、吊持具の上昇速度をVbとし、吊持具
に対する吊り具の相対的な上昇・降下速度を±Vaとし
た場合に、引上げ速度V=Vb±Va=一定の関係を維
持しつつVa、Vbを制御するようにした。そしてこの
ように引上げ手段の切り替えの際も、一定の引上げ速度
を維持することで、均一な条件で品質等の安定した単結
晶を成長させることが出来る。
Further, by controlling the pulling rate V of the single crystal when switching pulling of the single crystal lifting jig from said hanging member so as to be constant, the rising speed of the lifting jig and Vb, for lifting jig When the relative ascending / descending speed of the lifting device is ± Va, the pulling speed V = Vb ± Va = Va and Vb are controlled while maintaining a constant relationship. In this way, even when the pulling means is switched, by maintaining a constant pulling rate, it is possible to grow a single crystal with stable quality under uniform conditions.

【0013】また吊り具に掛かる荷重を計測し、この
計測値が吊持具に切り替える前の荷重に対して所定の割
合、又は所定の荷重値に達した時点で前記吊り具の相対
的な上昇・降下速度Vaを0にする制御を開始し、前記
吊持具の上昇速度VbをVにする制御を開始するように
した。そしてこの際、吊り具に残す荷重は、ワイヤの弛
みによる不具合防止に充分な荷重とし、例えば吊り具だ
けで引上げていた時の荷重の5割程度とする。また、ワ
イヤの弛みを無くすことで、吊り具による単結晶の引上
げ長さを正確に求めることが出来る。
Further, to measure the load applied to the hanging member, the predetermined ratio with respect to the load before the measured value is switched to the lifting jig or the relative of the hanger at the time of reaching a predetermined load value The control for setting the ascending / descending speed Va to 0 is started, and the control for setting the ascending speed Vb of the lifting tool to V is started. At this time, the load to be left on the hanger is set to be a load sufficient to prevent problems due to the looseness of the wire, for example, about 50% of the load when the hanger is pulled up. Further, by eliminating the slack of the wire, the pulling length of the single crystal by the suspending tool can be accurately obtained.

【0014】また単結晶と吊持具を上下方向に相対移
動させる際、単結晶引上げ速度Vを一定に保持しつつ前
記吊持具をゼロ値から徐々に上昇させ、吊り具を吊持具
に対して相対的に降下させるようにし、また吊り具を
相対的に降下させる際、単結晶引上げ速度の如何に拘ら
ず吊り具の降下速度を一定にするようにした。また
持具の速度と吊り具の速度を自動で制御し、引上げの切
り替えを行うようにした。このように吊り具の相対的な
降下速度を一定にすることで、切り替え移行時間等の条
件を一定にすることが出来、スムーズに衝撃なく吊持具
に載せることが出来る。
Further, when relatively moving the single crystal and lifting jig in the vertical direction, gradually increasing the suspended jig while maintaining the single crystal pulling speed V at a constant zero value, the lifting jig to sling In addition , the descent rate of the hanger was set to be constant regardless of the pulling speed of the single crystal when the hanger was relatively lowered. In addition , the speed of the lifting tool and the speed of the lifting tool are automatically controlled to switch the pulling. By thus setting the relative lowering speed of the lifting device to be constant, conditions such as the switching transition time can be fixed, and the device can be smoothly placed on the lifting device without impact.

【0015】また吊り具の位置と吊持具の位置を検出
し、これら位置から単結晶の位置及び引上げ長さを正確
に算出するようにした。この際、ワイヤに弛みがないた
め吊り具の位置から単結晶の位置を正確に求めることが
出来、また、これに吊持具の位置を合算することで引上
げ長さを正確に求めることが出来る。また融液面上で
成形された凸部が所定の高さ位置まで移動したことを吊
り具の位置の検出に基づき検知し、この所定の高さ位置
から単結晶引上げの切り替え動作を自動的に行うように
した。すなわち、予め所定の高さ位置に吊持具を待機さ
せておき、凸部がこの高さ位置を通過した時点から吊持
具を駆動すれば、吊持具を第2ネック部の周囲に近接し
て臨ませることが出来る。
Further , the position of the suspending tool and the position of the suspending tool are detected, and the position of the single crystal and the pulling length are accurately calculated from these positions. At this time, since the wire has no slack, the position of the single crystal can be accurately obtained from the position of the lifting tool, and the pulling length can be accurately determined by adding the position of the lifting tool to this. . In addition , the fact that the convex part formed on the melt surface has moved to a predetermined height position is detected based on the detection of the position of the lifting device, and the switching operation of pulling the single crystal from this predetermined height position is automatically performed. I decided to do it. That is, if the suspending tool is made to stand by at a predetermined height position in advance, and the suspending tool is driven from the time when the convex portion passes this height position, the suspending tool is brought close to the periphery of the second neck portion. You can face it.

【0016】また引上げ装置として、吊り具によって
吊持される種結晶の下方に、順次、第1ネック部、凸
部、第2ネック部を形成し、これに引続いて拡径部、直
胴部を有する単結晶を成長させるとともに、吊り具によ
る引上げ途中に第2ネック部が所定の位置まで引上げら
れた時点で、第2ネック部の周囲に非接触近接状態で臨
むことが出来る吊持具を設け、また、単結晶と吊持具は
それぞれの昇降機構によって上下に相対移動可能とし、
また吊持具の上部に凸部を載せて保持し得るようにし
た。このような装置によって所定の時点で吊持具を第
2ネック部の周囲に非接触状態で近接させ、単結晶と吊
持具を上下に相対移動させて凸部を吊持具の上部に載せ
るように接触させ保持させることが出来る。
Further , as a pulling device, a first neck portion, a convex portion, and a second neck portion are sequentially formed below a seed crystal suspended by a suspender, and subsequently, a diameter expanding portion and a straight portion are directly formed. A single crystal having a body part is grown, and at the time when the second neck part is pulled up to a predetermined position while being pulled up by a lifting tool, a suspension that can face the periphery of the second neck part in a non-contact proximity state. A tool is provided, and the single crystal and the lifting tool can be relatively moved up and down by their respective lifting mechanisms.
Also, a convex portion is placed on the upper part of the suspending tool so that it can be held. With such a device, the suspending tool is brought into contact with the periphery of the second neck portion at a predetermined time point in a non-contact state, and the single crystal and the suspending tool are relatively moved up and down so that the convex portion is located above the suspending tool. It can be held in contact by placing it on top of it.

【0017】また吊り具によって吊持される種結晶の
下方に、順次、第1ネック部、凸部、第2ネック部を形
成し、これに引続いて拡径部、直胴部を有する単結晶を
成長させるとともに、前記吊り具による引上げ途中で前
記単結晶の一部を吊持具にて保持し、以降の引上げを吊
持具に切り替えるようにした単結晶の引上げ装置におい
て、半導体材料の融液を収容するルツボと、このルツボ
の上部に配設され且つスライダ移動機構部によって上下
に移動自在なスライダと、このスライダ上に設けられ且
つ垂直軸まわりに回転自在な保持ケースと、この保持ケ
ースを回転させる回転機構部と、前記保持ケース側に設
けられ且つ前記吊り具の昇降を駆動する吊り具昇降機構
部と、前記吊り具に掛かる荷重を計測する荷重測定手段
と、前記保持ケース側に設けられ且つ前記第2ネック部
の周囲に非接触状態で近接自在な吊持具と、この吊持具
の近接又は離脱を駆動する吊持具駆動機構部と、前記ス
ライダ移動機構部、回転機構部、吊り具昇降機構部、荷
重計測手段、吊持具駆動機構部のそれぞれに連結し且つ
これらの同期制御を行う制御装置を設け、この制御装置
によって、単結晶の引上げを前記吊り具から吊持具に切
り替える際に、単結晶の引上げ速度Vを一定になるよう
制御出来るようにした。
Further, under the sling seed crystals are suspended by a sequentially first neck portion, the convex portion, the second neck portion is formed, the enlarged diameter portion subsequent to this, the straight body portion While growing a single crystal, a part of the single crystal is held by a lifting tool while being pulled by the lifting tool, and a pulling device for the single crystal, in which pulling thereafter is switched to the lifting tool, a semiconductor material A crucible for containing the melt, a slider arranged above the crucible and movable up and down by a slider moving mechanism, a holding case provided on the slider and rotatable around a vertical axis, A rotation mechanism section that rotates a holding case, a lifting tool elevating mechanism section that is provided on the holding case side and that drives the lifting tool up and down, a load measuring unit that measures a load applied to the hanging tool, and the holding case. A lifting tool that is provided on the side and that can freely approach the periphery of the second neck portion in a non-contact state, a lifting tool drive mechanism section that drives the approaching or releasing of the lifting tool, and the slider moving mechanism section, A control device is provided which is connected to each of the rotation mechanism part, the lifting device lifting mechanism part, the load measuring means, and the lifting device driving mechanism part, and which controls these synchronously. The control device controls the pulling of the single crystal by the lifting device. The pulling speed V of the single crystal can be controlled to be constant when switching from the to the hanging tool.

【0018】また吊り具の位置と吊持具の位置を検出
するそれぞれの位置検出器を設けた。そしてこれら各位
置検出器によって吊り具の位置と吊持具の位置を検出
し、これら位置に基づいて引上げ長さを算出する。
Further, it provided each of the position detector for detecting the position of the hanging member and lifting jig. Then, the position detector detects the position of the lifting device and the position of the lifting device, and calculates the pulling length based on these positions.

【0019】また吊持具の上昇速度Vbを、直径制御
装置によって制御するようにした。そして、このような
吊持具の上昇速度Vbの制御は、勿論、吊持具が上昇を
開始した時点移行である。
Further , the lifting speed Vb of the lifting tool is controlled by the diameter control device. And, such control of the lifting speed Vb of the lifting tool is, of course, a transition at the time when the lifting tool starts to lift.

【0020】[0020]

【発明の実施の形態】本発明の実施の形態について添付
した図面に基づき説明する。ここで、図1は単結晶引上
げ装置の全体構成例図、図2は吊り具及び吊持具まわり
の詳細構造を示す部分的縦断面図、図3は凸部形状等の
一例を示す拡大図、図4は引上げ移行状態を示す作用図
である。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the accompanying drawings. Here, FIG. 1 is an overall structural example view of a single crystal pulling apparatus, FIG. 2 is a partial vertical cross-sectional view showing a detailed structure around a suspending tool and a suspending tool, and FIG. 3 is an enlarged view showing an example of a convex shape and the like. 4 is an operation diagram showing a pulling transition state.

【0021】本発明の単結晶の引上げ装置は、例えば半
導体材料であるシリコン結晶を育成するいわゆるチョク
ラルスキー法(CZ法)のような単結晶引上げ装置にお
いて、特に重量の重い単結晶を安全に且つ有転位化する
ことなく製造するのに好適な装置であり、まず図1及び
図2に基づいて引上げ装置の基本構成の概要について説
明する。
The single crystal pulling apparatus of the present invention is a single crystal pulling apparatus such as the so-called Czochralski method (CZ method) for growing a silicon crystal which is a semiconductor material. The apparatus is suitable for manufacturing without dislocation, and first, the outline of the basic configuration of the pulling apparatus will be described with reference to FIGS. 1 and 2.

【0022】引上げ装置は、不図示のルツボを収容する
下部チャンバー1と、この下部チャンバー1の上部に固
定される固定板2と、この固定板2の上部にベローズチ
ャンバー3を介して取付けられるスライダ4を備え、こ
のスライダ4は、スライダ移動機構部5によって上下に
移動自在にされるとともに、スライダ4の上部には、筒
状の保持具6によって回転自在に支えられる保持ケース
7が設けられている。
The pulling device includes a lower chamber 1 for accommodating a crucible (not shown), a fixing plate 2 fixed to the upper part of the lower chamber 1, and a slider attached to the upper part of the fixing plate 2 via a bellows chamber 3. 4, the slider 4 is vertically movable by a slider moving mechanism portion 5, and a holding case 7 rotatably supported by a tubular holder 6 is provided on the slider 4. There is.

【0023】そして、この保持ケース7は、図2に示す
ように、下方の第1保持ケース7aと、上方の第2保持
ケース7bが一体結合されたものであり、下方の第1保
持ケース7aには、保持ケース7を垂直軸まわりに回転
させるための回転機構部8が設けられるとともに、第1
保持ケース7a内部には、一対の吊持具9、9が設けら
れており、この吊持具9、9の上端部は、吊持具駆動機
構部としての油圧シリンダユニット10、10に連結さ
れ、また中間部で交差してピン11により枢支されてい
る。
As shown in FIG. 2, the holding case 7 includes a lower first holding case 7a and an upper second holding case 7b, which are integrally connected to each other, and the lower first holding case 7a. Is provided with a rotation mechanism portion 8 for rotating the holding case 7 about a vertical axis, and
Inside the holding case 7a, a pair of suspending tools 9, 9 are provided, and upper ends of the suspending tools 9, 9 are connected to hydraulic cylinder units 10, 10 as a suspending tool drive mechanism section. Also, they are pivotally supported by a pin 11 intersecting at the intermediate portion.

【0024】また、上方の第2保持ケース7bには、吊
り具昇降機構部12と、吊り具に掛かる荷重を測定する
荷重測定手段13が設けられており、吊り具昇降機構部
12は、ワイヤ14の下端部に取付けられる吊り具15
を昇降自在に吊持している。そしてこの吊り具15に
は、種結晶16が保持されており、この種結晶16を原
料融液に接触させて単結晶を成長させる際、図3に示す
ように、結晶を無転位化せしめるための第1ネック部1
7を形成した後、凸部18と第2ネック部20を形成
し、その後、図2に示す拡径部21aと直胴部21bか
らなる単結晶部21を形成するようにしている。
The upper second holding case 7b is provided with a lifting tool lifting mechanism section 12 and a load measuring means 13 for measuring a load applied to the lifting tool. A hanger 15 attached to the lower end of 14
Is hung up and down freely. A seed crystal 16 is held on the suspending tool 15, and when the seed crystal 16 is brought into contact with the raw material melt to grow a single crystal, the crystal is made dislocation-free as shown in FIG. First neck part 1
After forming 7, the convex portion 18 and the second neck portion 20 are formed, and then the single crystal portion 21 including the expanded diameter portion 21a and the straight body portion 21b shown in FIG. 2 is formed.

【0025】前記ベローズチャンバー3は、例えばステ
ンレス、チタン等の金属製板材を蛇腹状に折畳んで上下
に伸縮出来るようにされており、下部チャンバー1に連
通せしめて、内部を外気と遮断している。因みに、この
ベローズチャンバー3は、結晶を引上げる際に伸縮する
が、最終的に製造した単結晶を取り出す際にも伸縮特性
が利用される。
The bellows chamber 3 is constructed such that a metal plate material such as stainless steel or titanium is folded in a bellows shape and can be expanded and contracted up and down. The bellows chamber 3 is communicated with the lower chamber 1 to shut off the inside from the outside air. There is. Incidentally, the bellows chamber 3 expands and contracts when the crystal is pulled up, but the expansion and contraction characteristics are also utilized when the finally manufactured single crystal is taken out.

【0026】前記スライダ移動機構部5は、昇降駆動モ
ータ22によって回転自在なボールネジ23と、固定板
2上に立設されるガイド軸24を備えており、前記ボー
ルネジ23がスライダ4のナット部4aに螺合するとと
もに、ガイド軸24がスライダ4のガイド孔に摺動自在
に挿通されている。そしてボールネジ23の回転によっ
てスライダ4が上下動自在になるようにしている。ま
た、昇降駆動モータ22の近傍には、スライダ用位置検
出器25を取付け、例えばモータ22の回転数によって
スライダ4の位置を検出出来るようにしている。
The slider moving mechanism portion 5 is provided with a ball screw 23 rotatable by a lifting drive motor 22 and a guide shaft 24 standing on the fixed plate 2. The ball screw 23 is a nut portion 4a of the slider 4. The guide shaft 24 is slidably inserted into the guide hole of the slider 4 while being screwed into. The rotation of the ball screw 23 allows the slider 4 to move up and down. Further, a slider position detector 25 is attached near the lifting drive motor 22 so that the position of the slider 4 can be detected by the number of rotations of the motor 22, for example.

【0027】前記回転機構部8は、保持ケース7を垂直
軸まわりに回転させるためのものであり、図2に示すよ
うに、下方の第1保持ケース7aの中間部外周に一体的
に設けられた大径のプーリ26と、前記スライダ4の一
端側上部に固着されたモータ27と、このモータ27の
出力軸に取付けられた小径のプーリ28と、前記大径の
プーリ26と小径のプーリ28間に巻装された無端状の
ベルト29を備えており、モータ27の駆動によって保
持ケース7が回転するようにしている。
The rotating mechanism portion 8 is for rotating the holding case 7 about a vertical axis, and is integrally provided on the outer periphery of the intermediate portion of the lower first holding case 7a as shown in FIG. A large diameter pulley 26, a motor 27 fixed to the upper part of one end of the slider 4, a small diameter pulley 28 attached to the output shaft of the motor 27, the large diameter pulley 26 and a small diameter pulley 28. An endless belt 29 wound between them is provided so that the holding case 7 is rotated by driving the motor 27.

【0028】前記吊持具9、9の上端部に枢着される吊
持具駆動機構部としての油圧シリンダユニット10、1
0は、第1保持ケース7aの左右一対の中空ボス部30
に固定されており、前記のように中間部で交差してピン
11によりスライダ4側に枢支されるとともに、下端部
にホルダ部9a、9aが形成されている。そしてこのホ
ルダ部9a、9aは、前記油圧シリンダユニット10、
10の作動によって開閉自在にされるとともに、例えば
内側が半円弧状に湾曲しており、例えば閉じ側に移動す
ると両端部同士が接触して中央に孔の明いたリング形状
が形成されるようにしている。そしてこのリングの径
は、第2ネック部20の径よりは大きく凸部18の径よ
りは小さくなるようにしている。因みに、第1保持ケー
ス7a内の中央には、ワイヤ14を挿通せしめたガイド
チューブ31を上下方向に配設し、ワイヤ14と吊持具
9、9等との干渉を防止するようにしている。
A hydraulic cylinder unit 10, 1 as a lifting tool drive mechanism portion pivotally attached to the upper ends of the lifting tools 9, 9.
0 is a pair of left and right hollow boss portions 30 of the first holding case 7a.
It is fixed to the slider 4, and intersects at the intermediate portion as described above, and is pivotally supported on the slider 4 side by the pin 11, and holder portions 9a, 9a are formed at the lower end portion. The holder portions 9a, 9a are provided on the hydraulic cylinder unit 10,
It is opened and closed by the operation of 10, and for example, the inner side is curved in a semi-circular shape, and when it is moved to the closed side, for example, both ends contact each other to form a ring shape with a hole in the center. ing. The diameter of this ring is larger than the diameter of the second neck portion 20 and smaller than the diameter of the convex portion 18. By the way, in the center of the first holding case 7a, a guide tube 31 into which the wire 14 is inserted is arranged in the vertical direction so as to prevent interference between the wire 14 and the suspenders 9, 9, and the like. .

【0029】前記吊り具昇降機構部12は、上部の第2
保持ケース7b内の底板に取付けられたモータ32の駆
動によって回転するプーリ33と、底板に立設された支
柱34に片持ち式に枢着されるレバー35と、このレバ
ー35の中間部に枢支されるガイドプーリ36を備え、
前記ワイヤ14はガイドプーリ36を介してプーリ33
に巻回されている。そして、モータ32の駆動によって
ワイヤ14を介して吊り具15を昇降動させることが出
来るようにしている。そして、前記ガイドプーリ36の
近傍には、ワイヤ用位置検出器37を設け、例えばガイ
ドプーリ36の回転によって吊り具15の位置を検出す
るようにしている。
The lifting device lifting mechanism section 12 has a second upper portion.
A pulley 33 that is rotated by the drive of a motor 32 attached to the bottom plate in the holding case 7b, a lever 35 that is cantilevered on a column 34 that is erected on the bottom plate, and a lever 35 that is pivotally attached to an intermediate portion of the lever 35. The guide pulley 36 supported is provided,
The wire 14 is connected to a pulley 33 via a guide pulley 36.
It is wound around. Then, by driving the motor 32, the suspending tool 15 can be moved up and down via the wire 14. A wire position detector 37 is provided in the vicinity of the guide pulley 36, and the position of the suspender 15 is detected by the rotation of the guide pulley 36, for example.

【0030】前記荷重測定手段13は、前記レバー35
の先端のピボット35aと、このピボット35aを支持
するロードセル38を備え、前記ガイドプーリ36に加
わる結晶重量に対する所定比率の荷重を測定出来るよう
にしている。
The load measuring means 13 includes the lever 35.
It has a pivot 35a at the tip and a load cell 38 supporting the pivot 35a, so that a load of a predetermined ratio to the crystal weight applied to the guide pulley 36 can be measured.

【0031】そして以上のようなスライダ移動機構部5
の昇降駆動モータ22、及び回転機構部8のモータ2
7、及び吊り具昇降機構部12のモータ32、及び荷重
測定手段13のロードセル38、及び吊持具駆動機構部
としての油圧シリンダユニット10には、制御装置40
が接続されており、これらを同期して制御出来るように
している。また、前記昇降駆動モータ22近傍のスライ
ダ用位置検出器25、及び吊り具昇降機構部12のガイ
ドプーリ36近傍のワイヤ用位置検出器37も制御装置
40に接続されており、各検出信号を制御装置40に送
り込むことが出来るようにされている。
Then, the slider moving mechanism 5 as described above is used.
Lifting drive motor 22 and motor 2 of rotation mechanism section 8
7, the motor 32 of the lifting / lowering mechanism 12 and the load cell 38 of the load measuring means 13, and the hydraulic cylinder unit 10 as the lifting / lowering mechanism driving mechanism, the controller 40.
Are connected, and these can be controlled synchronously. The slider position detector 25 near the lifting drive motor 22 and the wire position detector 37 near the guide pulley 36 of the lifting / lowering mechanism 12 are also connected to the control device 40 to control each detection signal. It can be fed into the device 40.

【0032】次に、以上のような引上げ装置による単結
晶の引上げ方法について説明する。まず、吊り具15に
保持される種結晶16をルツボの原料融液の表面に接触
させ、回転機構部8のモータ27を作動させて保持ケー
ス7を静かに回転させつつ吊り具昇降機構部12によっ
てワイヤ14を所定速度で引上げる。そして、種結晶1
6の引上げ速度又はルツボ内の融液温度の少なくとも一
方を制御して、種結晶16の下方に、図3に示すような
第1ネック部17、凸部18、第2ネック部20を成形
する。そしてこの際、凸部18の径は、吊持具9、9が
閉じた時のホルダ部9a、9aのリング径より大きく
し、第2ネック部20の径は、ホルダ部9a、9aのリ
ング径より小さくし、実施例では、第1ネック部17の
径を約φ4に、凸部18の最大径を約φ25に、第2ネ
ック部20の径を約φ7にしている。
Next, a method for pulling a single crystal by the pulling apparatus as described above will be described. First, the seed crystal 16 held by the hanger 15 is brought into contact with the surface of the raw material melt of the crucible, the motor 27 of the rotation mechanism 8 is operated to gently rotate the holding case 7, and the hanger lifting mechanism 12 is moved. Pulls the wire 14 at a predetermined speed. And seed crystal 1
By controlling at least one of the pulling rate of No. 6 and the melt temperature in the crucible, a first neck portion 17, a convex portion 18, and a second neck portion 20 as shown in FIG. 3 are formed below the seed crystal 16. . At this time, the diameter of the convex portion 18 is made larger than the ring diameter of the holder portions 9a, 9a when the suspenders 9, 9 are closed, and the diameter of the second neck portion 20 is the ring of the holder portions 9a, 9a. In the embodiment, the diameter of the first neck portion 17 is about φ4, the maximum diameter of the convex portion 18 is about φ25, and the diameter of the second neck portion 20 is about φ7.

【0033】次いで、引上げ速度、融液温度等を調整し
て拡径部21a、直胴部21bを備えた単結晶部21を
成長させ、吊り具昇降機構部12のモータ32を作動さ
せて吊り具15を所定の引上げ速度Vで引上げる。そし
て、凸部18を形成した時点から起算して吊り具15が
予め定めた所定の位置まで引上げられると、制御装置4
0によって油圧シリンダユニット10、10が作動し、
吊持具9、9がピン11まわりに揺動してホルダ部9
a、9aが閉じるようにしている。そしてこの際、ホル
ダ部9a、9aは図4(A)に示すように、第2ネック
部20の周囲に非接触状態で近接するようにしている。
Next, the pulling speed, the melt temperature, etc. are adjusted to grow the single crystal portion 21 having the expanded diameter portion 21a and the straight body portion 21b, and the motor 32 of the lifting / lowering mechanism 12 is operated to suspend. The tool 15 is pulled up at a predetermined pulling speed V. Then, when the suspension 15 is pulled up to a predetermined position calculated from the time when the convex portion 18 is formed, the control device 4
0 activates the hydraulic cylinder units 10 and 10,
The suspending tools 9, 9 swing around the pin 11 and move to the holder portion 9
A and 9a are closed. At this time, as shown in FIG. 4 (A), the holder portions 9a, 9a are arranged so as to approach the periphery of the second neck portion 20 in a non-contact state.

【0034】次に、このホルダ部9a、9aが閉じる
と、引上げ手段の切り替え移行が開始され、スライダ移
動機構部5の昇降駆動モータ22が作動を開始して吊持
具9が徐々に上昇を始めるとともに、吊り具15が徐々
に減速を始める。そして、この引上げ手段の移行が開始
されてからの速度変化の状態は、図5の上方のグラフに
示す通りであり、図5のA点が引上げ手段切り替え移行
開始時点である。ここで、図5は吊り具15と吊持具
9、9の引上げ速度変化(上図)と、荷重の移行状態
(下図)の実施例を示すグラフであり、共に横軸が時間
経過(min )を示すとともに、上図の縦軸の速度の単位
はmm/min、下図の縦軸の荷重の単位はkgである。
Next, when the holder portions 9a, 9a are closed, switching of the pulling means is started, the lifting drive motor 22 of the slider moving mechanism portion 5 starts operating, and the lifting tool 9 is gradually raised. With the start, the lifting device 15 gradually starts decelerating. The state of speed change after the start of shifting the pulling means is as shown in the upper graph of FIG. 5, and the point A in FIG. Here, FIG. 5 is a graph showing an example of changes in the pulling speed of the lifting device 15 and the lifting devices 9 and 9 (upper diagram), and a transition state of the load (lower diagram). ), The unit of the vertical axis in the upper diagram is mm / min, and the unit of the vertical axis in the lower diagram is kg.

【0035】この実施例では、吊持具9に対する吊り具
15の相対移動速度Vaは、当初の引上げ速度V=1.
0(mm/min)から徐々に減少してB点で速度ゼロまで減少
した後逆に降下を始め、C点で降下速度Va=−3.0
(mm/min)と一定に保持される。また、吊持具9の上昇速
度Vbもゼロから徐々に上昇した後C点でVb=4.0
(mm/min)と一定に保持され、また、この間の両者の速度
の割合は、吊持具9の速度Vbと吊り具15の相対移動
速度を±Va(+は上昇、−は下降)との加算値V(V
=Vb±Va)が一定になるように制御される。そして
この速度Vが、単結晶の絶対的な引上げ速度となり、引
上げ手段切り替え前の引上げ速度と同じ速度に保たれ
る。勿論、このVb±Va=V=一定の関係は、C点以
降、切り替え操作が終了するまでの間にも適用される。
また、切り替え移行中の吊り具15と吊持具9の位置関
係は図4(B)の通りである。またこの際、図5のA点
〜C点間の速度変化の割合(変化に要する時間)は、V
=一定を満足する限り任意に設定出来る。
In this embodiment, the relative moving speed Va of the lifting device 15 with respect to the lifting device 9 is the initial pulling speed V = 1.
It gradually decreases from 0 (mm / min), decreases to zero speed at point B, and then starts to descend, and at point C the descending speed Va = -3.0.
It is kept constant at (mm / min). Further, the rising speed Vb of the lifting device 9 also gradually increases from zero, and then Vb = 4.0 at the point C.
(mm / min) is kept constant, and the ratio of the two speeds during this period is defined as the relative movement speed of the speed Vb of the lifting tool 9 and the lifting tool 15 is ± Va (+ is up, − is down). Value V (V
= Vb ± Va) is controlled to be constant. Then, this speed V becomes the absolute pulling speed of the single crystal, and is kept at the same speed as the pulling speed before switching the pulling means. Of course, this relationship of Vb ± Va = V = constant is also applied after the point C until the switching operation is completed.
Further, the positional relationship between the suspending tool 15 and the suspending tool 9 during the switching transition is as shown in FIG. 4 (B). At this time, the rate of change in speed between points A to C in FIG. 5 (time required for change) is V
= Can be set arbitrarily as long as a certain value is satisfied.

【0036】吊り具15が吊持具9に対して相対的に降
下してゆくと、そのうち凸部18がホルダ部9a、9a
の上部に載るように接触する(D点)。この際、吊り具
15と吊持具9の接触速度は、吊り具の降下速度−Va
であり、この速度で凸部18がホルダ部9a、9aに接
触することになるが、接触方向が上下方向であるため、
単結晶部21に横方向の力がかからず、有転位化等の不
具合が生じにくい。
As the suspending tool 15 descends relative to the suspending tool 9, the convex portion 18 of the suspending tool 15 becomes the holder portions 9a, 9a.
Contact so that it will be placed on the top of the (point D). At this time, the contact speed between the lifting device 15 and the lifting device 9 is the descending speed of the lifting device-Va.
At this speed, the convex portion 18 comes into contact with the holder portions 9a, 9a, but since the contact direction is the vertical direction,
A lateral force is not applied to the single crystal portion 21, and a defect such as dislocation generation is unlikely to occur.

【0037】また接触した後も、吊り具15の荷重をホ
ルダ部9a、9aに移行するため、それまでと同じ移動
条件が継続される。すると、図5の下方のグラフに示す
ように、吊り具15に掛かる荷重(ロードセル38の検
出荷重(kg))は減少し始め、荷重の一部がホルダ部9
a、9a側に移行するようになる。そして、吊り具15
に掛かる荷重が、それまでの5割まで減少した時点(E
点)で、吊り具15と吊持具9の荷重割合が5:5にな
り、このE点から吊持具9の上昇速度Vbを単結晶引上
げ速度V=1.0(mm/min)まで減じる制御が開始され、
吊り具15の降下速度−Vaをゼロまで戻す制御が開始
される。そして、この間の速度割合も、V=一定の条件
が維持され、また、E点〜F点間のVa、Vbの速度変
化の割合は、V=一定を満足する限り任意に設定するこ
とが出来る。
Even after the contact, the load of the suspender 15 is transferred to the holder portions 9a, 9a, so that the same movement condition as before is continued. Then, as shown in the lower graph of FIG. 5, the load applied to the hanger 15 (the load detected by the load cell 38 (kg)) starts to decrease, and a part of the load is reduced to the holder portion 9
It comes to shift to the a, 9a side. And the hanging device 15
When the load applied to 50% of the load (E)
Point), the load ratio of the lifting device 15 and the lifting device 9 becomes 5: 5, and the rising speed Vb of the lifting device 9 from this point E to the single crystal pulling speed V = 1.0 (mm / min). The control to reduce is started,
The control for returning the descending speed −Va of the hanging device 15 to zero is started. As for the speed ratio during this time, the condition that V = constant is maintained, and the ratio of the speed changes of Va and Vb between points E and F can be arbitrarily set as long as V = constant is satisfied. .

【0038】そして切り替え移行が完了したF点以降
は、単結晶の引上げは、図4(C)に示すように、吊持
具9、9によって行われることになり、吊り具にかかる
荷重はE点における荷重に維持されている。このため、
従来のように吊り具15側のワイヤ14が弛んで第1ネ
ック部17が損傷するような不具合がない。
After the point F at which the switching transition is completed, the pulling of the single crystal is carried out by the suspenders 9, 9 as shown in FIG. 4 (C), and the load applied to the suspender is E. The load at the point is maintained. For this reason,
There is no inconvenience that the wire 14 on the hanger 15 side is loosened and the first neck portion 17 is damaged as in the conventional case.

【0039】ところで、以上のような切り替え移行を実
験で確認した結果、図5のD点〜E点間において、凸部
18がホルダ部9a、9aに載って荷重割合が5:5に
なるまでの間、Vb、Vaを一定に保ったままでは、厳
密にはVb±Va=V=一定の関係が成り立たない場合
があることが明らかになった。そこで、そのような場合
には吊持具9の上昇速度Vbに補正を加えて、引上げ速
度Vを一定に保つようにする必要があり、このような補
正が行われた場合の補正後のVb線の一例を図5の上方
のグラフの破線で示した。
By the way, as a result of confirming the switching transition as described above by an experiment, between the points D and E in FIG. 5, the convex portion 18 is placed on the holder portions 9a, 9a until the load ratio becomes 5: 5. It has been clarified that the relationship of Vb ± Va = V = constant may not be established strictly when Vb and Va are kept constant during the period. Therefore, in such a case, it is necessary to correct the rising speed Vb of the lifting device 9 so as to keep the pulling speed V constant. When such a correction is made, the corrected Vb is corrected. An example of the line is shown by the broken line in the upper graph of FIG.

【0040】また、上記の引上げ手段切り替え移行中
に、結晶直径制御装置の信号によって結晶の直径を一定
にする必要上、引上げ速度Vを変化させる必要が生じた
時は、吊持具9側の上昇速度Vbを変化させることで対
処するようにしている。従って、吊り具15の相対移動
速度±Vaは常に一定に保持され、引上げ手段の移行開
始A点から吊持具による結晶保持D点までの時間等の条
件を一定にすることが出来、ホルダ部9a、9a上に凸
部18をスムーズに衝撃なく載せることが出来る。
When it is necessary to change the pulling speed V in order to keep the diameter of the crystal constant by the signal from the crystal diameter control device during the above-mentioned pulling means switching transition, the lifting tool 9 side is moved. This is dealt with by changing the rising speed Vb. Therefore, the relative moving speed ± Va of the lifting device 15 is always kept constant, and the conditions such as the time from the start point A of the movement of the pulling means to the point D of holding the crystal by the lifting device can be made constant, and the holder part The convex portion 18 can be placed smoothly on the 9a and 9a without impact.

【0041】また、吊り具15の位置をワイヤ用位置検
出器37により検出し、吊持具9の位置をスライダ用位
置検出器25によって検出し、これらの検出値から単結
晶の引上げ長さを求めるようにしているが、ワイヤ14
に弛みがないため、それぞれの位置を正確に検出出来る
ので、引上げ長さが正確に求まる。
Further, the position of the suspending tool 15 is detected by the wire position detector 37, the position of the suspending tool 9 is detected by the slider position detector 25, and the pulling length of the single crystal is determined from these detected values. I'm trying to ask, but wire 14
Since there is no slack, each position can be accurately detected, so the pulling length can be accurately obtained.

【0042】尚、本発明は、上記実施形態に限定される
ものではない。上記実施形態は、例示であり、本発明の
特許請求の範囲に記載された技術的思想と実質的に同一
な構成を有し、同様な作用効果を奏するものは、いかな
るものであっても本発明の技術的範囲に包含される。
The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, has substantially the same configuration as the technical idea described in the scope of the claims of the present invention, and has any similar effect to the present invention. It is included in the technical scope of the invention.

【0043】例えば、上記実施形態では吊持具に荷重を
移行する場合において、それまでの吊り具に掛かる荷重
の半分を残すことでワイヤの弛みを防止したが、本発明
はこれには限定されず、吊り具に残す荷重は、ワイヤが
弛まずネック部破損等の不具合を避けることが出来るな
らば任意に設定することができる。
For example, in the above embodiment, when the load is transferred to the suspending tool, the wire is prevented from loosening by leaving half of the load applied to the suspending tool until then, but the present invention is not limited to this. Instead, the load to be left on the hanger can be set arbitrarily as long as the wire does not loosen and troubles such as damage to the neck portion can be avoided.

【0044】[0044]

【発明の効果】以上のように本発明は、吊り具による引
上げ途中で凸部に引続く第2ネック部を形成し、第2ネ
ック部が所定の位置まで引上げられた時点で、吊持具を
第2ネック部の周囲に非接触近接状態で臨ませ、次い
で、単結晶と吊持具を上下方向に相対移動させ、凸部を
吊持具の上部に載せるように接触させて吊持具で凸部を
保持した後、吊り具に掛かる荷重を吊持具に移行し、以
降の引上げを吊持具にて行うようにしたため、単結晶に
横方向から力が加わらず、有転位化等の不具合が生じに
くくすることが出来る。そして、吊持具に全荷重を移行
せず、吊り具に一部の荷重を残すことによってワイヤの
弛みを防止することが出来、ネック部破損等の不具合を
避けることが出来る。また、同時に吊り具の位置と吊持
具の位置を正確に検出出来るため、単結晶の引上げ長さ
を正確に求めることが出来る。更に、引上げ手段切り替
え移行過程において、吊持具に対する吊り具の相対移動
速度を一定にしているため、一定の条件で切り替え移行
が可能になり、単結晶を吊持具上にスムーズに載せるこ
とが出来る等の効果を奏する。
INDUSTRIAL APPLICABILITY As described above, the present invention forms the second neck portion continuing to the convex portion during the lifting by the lifting tool, and the lifting tool is lifted when the second neck section is lifted to a predetermined position. To the periphery of the second neck portion in a non-contact proximity state, and then the single crystal and the suspending tool are moved relative to each other in the up-down direction to bring the convex portion into contact with the suspending tool so as to be placed on the suspending tool. After holding the convex part with, the load applied to the hanger was transferred to the hanger, and the subsequent pulling was done with the hanger, so no force was applied to the single crystal from the lateral direction, causing dislocation, etc. It is possible to make it difficult for the trouble of. Then, it is possible to prevent the wire from slackening by leaving a part of the load on the hanger without transferring the entire load to the hanger, and avoid problems such as damage to the neck portion. Further, at the same time, the position of the suspending tool and the position of the suspending tool can be accurately detected, so that the pulling length of the single crystal can be accurately obtained. Furthermore, since the relative movement speed of the lifting device with respect to the lifting device is constant in the pulling means switching process, the switching process can be performed under certain conditions, and the single crystal can be smoothly placed on the lifting device. It has the effect of being able to do so.

【図面の簡単な説明】[Brief description of drawings]

【図1】単結晶引上げ装置の全体構成例図である。FIG. 1 is a diagram illustrating an overall configuration example of a single crystal pulling apparatus.

【図2】吊り具及び吊持具まわりの詳細構造を示す部分
的縦断面図である。
FIG. 2 is a partial vertical cross-sectional view showing a detailed structure around a suspender and a suspender.

【図3】凸部形状等の拡大図である。FIG. 3 is an enlarged view of a convex shape and the like.

【図4】引上げ移行状態を示す作用図であり、(A)は
引上げ手段切り替え開始時の状態図、(B)は引上げ手
段切り替え中の状態図、(C)は引上げ手段切り替え終
了時の状態図である。
4A and 4B are operation diagrams showing a pulling transition state, in which FIG. 4A is a state diagram at the start of pulling means switching, FIG. 4B is a state diagram during pulling means switching, and FIG. It is a figure.

【図5】吊り具と吊持具の速度変化と、荷重の移行状態
を示すグラフである。
FIG. 5 is a graph showing changes in speeds of the suspending tool and the suspending tool, and a load transfer state.

【図6】従来の引上げ装置の説明図である。FIG. 6 is an explanatory view of a conventional pulling device.

【符号の説明】[Explanation of symbols]

1…下部チャンバー、 2…固定板、3
…ベローズチャンバー、 4…スライダ、4
a…ナット部、 5…スライダ移動
機構部、6…保持具、 7…保
持ケース、7a…第1保持ケース、 7b
…第2保持ケース、8…回転機構部、
9…吊持具、9a…ホルダ部、
10…油圧シリンダユニット、11…ピン、
12…吊り具昇降機構部、13…荷重
測定手段、 14…ワイヤ、15…吊り
具、 16…種結晶、17…第1
ネック部、 18…凸部、20…第2ネ
ック部、 21…単結晶部、21a…拡
径部、 21b…直胴部、22…昇
降駆動モータ、 23…ボールネジ、24
…ガイド軸、 25…スライダ用位
置検出器、26…プーリ、 27
…モータ、28…プーリ、 29
…ベルト、30…中空ボス部、 31
…ガイドチューブ、32…モータ、
33…プーリ、34…支柱、
35…レバー、35a…ピボット、
36…ガイドプーリ、37…ワイヤ用位置検出器、
38…ロードセル、40…制御装置、
51…吊り具、52…種結晶、
53…原料融液、54…吊り具昇降機構
部、 55…単結晶部、56…スライダ移動
機構部、 57…スライダ、58…保持ケー
ス、 60…ワイヤ、61…吊持具、
61a…係着部、62…ネック
部、 63…凹凸部。
1 ... Lower chamber, 2 ... Fixing plate, 3
… Bellows chamber, 4… Slider, 4
a ... nut part, 5 ... slider moving mechanism part, 6 ... holding tool, 7 ... holding case, 7a ... first holding case, 7b
… Second holding case, 8… Rotation mechanism part,
9 ... Lifting tool, 9a ... Holder part,
10 ... Hydraulic cylinder unit, 11 ... Pin,
Reference numeral 12 ... Lifting tool lifting mechanism section, 13 ... Load measuring means, 14 ... Wire, 15 ... Lifting tool, 16 ... Seed crystal, 17 ... First
Neck portion, 18 ... Convex portion, 20 ... Second neck portion, 21 ... Single crystal portion, 21a ... Expanded diameter portion, 21b ... Straight body portion, 22 ... Lifting drive motor, 23 ... Ball screw, 24
... Guide shaft, 25 ... Slider position detector, 26 ... Pulley, 27
... motor, 28 ... pulley, 29
… Belt, 30… Hollow boss, 31
… Guide tube, 32… Motor,
33 ... Pulley, 34 ... Post,
35 ... lever, 35a ... pivot,
36 ... Guide pulley, 37 ... Wire position detector,
38 ... Load cell, 40 ... Control device,
51 ... Hanging tool, 52 ... Seed crystal,
53 ... Raw material melt, 54 ... Lifting tool lifting mechanism section, 55 ... Single crystal section, 56 ... Slider moving mechanism section, 57 ... Slider, 58 ... Holding case, 60 ... Wire, 61 ... Lifting tool,
61a ... Engagement part, 62 ... Neck part, 63 ... Uneven part.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 飯野 栄一 群馬県安中市磯部2丁目13番1号 信越 半導体株式会社 半導体磯部研究所内 (56)参考文献 特開 昭62−288191(JP,A) 特開 平5−270975(JP,A) (58)調査した分野(Int.Cl.7,DB名) C30B 15/00 C30B 15/20 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Eiichi Iino Eiichi Iino 2-13-1, Isobe, Gunma Prefecture Shin-Etsu Semiconductor Co., Ltd., Semiconductor Isobe Laboratory (56) Reference JP-A-62-288191 (JP, A) JP-A-5-270975 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C30B 15/00 C30B 15/20

Claims (12)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 吊り具によって吊持される種結晶の下方
に、順次、第1ネック部、凸部、第2ネック部を形成
し、これに引続いて拡径部、直胴部を有する単結晶を成
長させるとともに、前記吊り具による引上げ途中で前記
単結晶の一部を吊持具にて保持し、以降の引上げを吊持
具に切り替えるようにした単結晶の引上げ方法であっ
て、前記吊り具によって第2ネック部が所定の位置まで
引上げられた時点で前記吊持具を第2ネック部の周囲に
非接触近接状態で臨ませ、次いで、前記単結晶と吊持具
を上下方向に相対移動させ、前記凸部を吊持具の上部に
載せるように接触させて吊持具で凸部を保持した後、吊
り具に掛かる荷重の一部を吊持具に移行し、以降の引上
げを吊持具にて行い、かつ前記吊り具の位置と吊持具の
位置を検出し、これらの位置から単結晶の位置及び引上
げ長さを算出するようにしたことを特徴とする単結晶の
引上げ方法。
1. A first neck portion, a convex portion, and a second neck portion are sequentially formed below a seed crystal suspended by a suspender, and subsequently, a diameter expanding portion and a straight body portion are provided. While growing a single crystal, a part of the single crystal is held by a lifting tool during the pulling by the lifting tool, which is a method of pulling the single crystal so that the subsequent lifting is switched to the lifting tool. When the second neck portion is pulled up to a predetermined position by the suspending tool, the suspending tool faces the periphery of the second neck portion in a non-contact proximity state, and then the single crystal and the suspending tool are vertically moved. Relative movement to, hold the convex portion with the lifting tool by contacting the convex portion so as to be placed on the upper part of the lifting tool, then transfer a part of the load applied to the lifting tool to the lifting tool, and Lifting is done with a lifting tool, and the position of the lifting tool and the position of the lifting tool are detected. Pulling method of the single crystal, characterized in that the positions so as to leave calculate the position and pulling a length of the single crystal.
【請求項2】 請求項1に記載の単結晶の引上げ方法に
おいて、前記凸部と第2ネック部は、単結晶の引上げ速
度又はルツボ内の融液温度の少なくとも一方を制御する
ことで意図的に形成されたものであることを特徴とする
単結晶の引上げ方法。
2. The single crystal pulling method according to claim 1, wherein the convex portion and the second neck portion are intentionally controlled by controlling at least one of a pulling speed of the single crystal and a melt temperature in the crucible. A method for pulling a single crystal, characterized in that the single crystal is formed by.
【請求項3】 請求項1又は請求項2に記載の単結晶の
引上げ方法において、前記第1ネック部と凸部と第2ネ
ック部は、その直径を所望の径にするため、単結晶の引
上げ速度又はルツボ内の融液温度の少なくとも一方を自
動制御することにより形成されたものであることを特徴
とする単結晶の引上げ方法。
3. The method for pulling a single crystal according to claim 1, wherein the first neck portion, the convex portion, and the second neck portion have a desired diameter so that the single crystal A single crystal pulling method, which is formed by automatically controlling at least one of a pulling rate and a melt temperature in a crucible.
【請求項4】 請求項1乃至請求項3のいずれか1項に
記載の単結晶の引上げ方法において、前記単結晶の引上
げを前記吊り具から吊持具に切り替える際の単結晶の引
上げ速度Vは一定になるように制御され、前記吊持具の
上昇速度をVbとし、該吊持具に対する前記吊り具の相
対的な上昇・降下速度を±Vaとした場合に、引上げ速
度V=Vb±Va=一定の関係を維持しつつVa、Vb
が制御されることを特徴とする単結晶の引上げ方法。
4. The method for pulling a single crystal according to claim 1, wherein the pulling speed V of the single crystal when the pulling of the single crystal is switched from the suspending tool to the suspending tool. Is controlled so that the lifting speed of the lifting tool is Vb, and the relative lifting / lowering speed of the lifting tool with respect to the lifting tool is ± Va, the pulling speed V = Vb ± Va = Va, Vb while maintaining a constant relationship
A method for pulling a single crystal, characterized in that:
【請求項5】 請求項4に記載の単結晶の引上げ方法に
おいて、前記吊り具に掛かる荷重を計測し、この計測値
が吊持具に切り替える前の荷重に対して所定の割合、又
は所定の荷重値に達した時点で前記吊り具の相対的な上
昇・降下速度Vaを0にする制御を開始し、前記吊持具
の上昇速度VbをVにする制御を開始することを特徴と
する単結晶の引上げ方法。
5. The method for pulling a single crystal according to claim 4, wherein a load applied to the suspending tool is measured, and the measured value has a predetermined ratio or a predetermined value with respect to a load before switching to the suspending tool. When the load value is reached, the control for setting the relative lifting / lowering speed Va of the lifting device to 0 is started, and the control for setting the lifting speed Vb of the lifting device to V is started. Crystal pulling method.
【請求項6】 請求項1乃至請求項5のいずれか1項に
記載の単結晶の引上げ方法において、前記単結晶と吊持
具を上下方向に相対移動させる際、単結晶引上げ速度V
を一定に保持しつつ前記吊持具をゼロ値から徐々に上昇
させ、前記吊り具を吊持具に対して相対的に降下させる
ことを特徴とする単結晶の引上げ方法。
6. The method for pulling a single crystal according to claim 1, wherein the single crystal pulling speed V is set when the single crystal and the lifting tool are relatively moved in the vertical direction.
The method for pulling a single crystal is characterized in that the lifting tool is gradually raised from a zero value while keeping the value constant, and the lifting tool is lowered relative to the lifting tool.
【請求項7】 請求項6に記載の単結晶の引上げ方法に
おいて、前記吊り具を相対的に降下させる際、単結晶引
上げ速度の如何に拘らず吊り具の降下速度を一定にする
ことを特徴とする単結晶の引上げ方法。
7. The method for pulling a single crystal according to claim 6, wherein when the lifting tool is relatively lowered, the descent rate of the lifting tool is made constant regardless of the single crystal pulling rate. And pulling method of single crystal.
【請求項8】 請求項6又は請求項7に記載の単結晶の
引上げ方法において、前記吊持具の速度と吊り具の速度
を自動で制御し、引上げの切り替えを行うことを特徴と
する単結晶の引上げ方法。
8. The single crystal pulling method according to claim 6 or 7, wherein the pulling tool is switched by automatically controlling the speed of the lifting tool and the lifting tool. Crystal pulling method.
【請求項9】 請求項1乃至請求項8のいずれか1項に
記載の単結晶の引上げ方法において、融液面上で成形さ
れた凸部が所定の高さ位置まで移動したことを吊り具の
検出に基づき検知し、この所定の高さ位置から単結晶引
上げの切り替え動作を自動的に行うことを特徴とする単
結晶の引上げ方法。
9. The method for pulling a single crystal according to claim 1, wherein the protrusions formed on the melt surface have moved to a predetermined height position. The single crystal pulling method is characterized in that the single crystal pulling operation is automatically performed from this predetermined height position.
【請求項10】 吊り具によって吊持される種結晶の下
方に、順次、第1ネック部、凸部、第2ネック部を形成
し、これに引続いて拡径部、直胴部を有する単結晶を成
長させるとともに、前記吊り具による引上げ途中で前記
単結晶の一部を吊持具にて保持し、以降の引上げを吊持
具に切り替えるようにした単結晶の引上げ装置であっ
て、半導体材料の融液を収容するルツボと、このルツボ
の上部に配設され且つスライダ移動機構部によって上下
に移動自在なスライダと、このスライダ上に設けられ且
つ垂直軸まわりに回転自在な保持ケースと、この保持ケ
ースを回転させる回転機構部と、前記保持ケース側に設
けられ且つ前記吊り具の昇降を駆動する吊り具昇降機構
部と、前記吊り具に掛かる荷重を計測する荷重測定手段
と、前記保持ケース側に設けられ且つ前記第2ネック部
の周囲に非接触状態で近接自在な吊持具と、この吊持具
の近接又は離脱を駆動する吊持具駆動機構部と、前記ス
ライダ移動機構部、回転機構部、吊り具昇降機構部、荷
重計測手段、吊持具駆動機構部のそれぞれに連結し且つ
これらの同期制御を行う制御装置を備え、この制御装置
によって、単結晶の引上げを前記吊り具から吊持具に切
り替える際に、単結晶の引上げ速度Vを一定になるよう
制御出来るようにしたことを特徴とする単結晶の引上げ
装置。
10. A first neck portion, a convex portion, and a second neck portion are sequentially formed below a seed crystal suspended by a suspender, and subsequently, a diameter expanding portion and a straight body portion are provided. Along with growing a single crystal, a part of the single crystal is held by a lifting tool during the lifting by the lifting tool, and a pulling device for the single crystal that switches the subsequent lifting to the lifting tool, A crucible for containing a melt of a semiconductor material, a slider arranged above the crucible and movable up and down by a slider moving mechanism, and a holding case provided on the slider and rotatable around a vertical axis. A rotation mechanism section for rotating the holding case, a lifting tool lifting mechanism section provided on the holding case side for driving the lifting tool to move up and down, a load measuring means for measuring a load applied to the hanging tool, Holding case side And a slinging tool which is provided in the vicinity of the second neck portion and can freely approach the second neck portion in a non-contact state; A mechanism unit, a lifting device lifting mechanism unit, a load measuring means, and a lifting device driving mechanism unit are provided with a control device that performs synchronous control of these, and the control device pulls a single crystal from the lifting device. An apparatus for pulling a single crystal, wherein a pulling speed V of the single crystal can be controlled to be constant when switching to a lifting tool.
【請求項11】 請求項10に記載の単結晶の引上げ装
置において、この装置は、前記吊り具の位置と吊持具の
位置を検出するそれぞれの位置検出器を備えたことを特
徴とする単結晶の引上げ装置。
11. The single crystal pulling apparatus according to claim 10, wherein the apparatus is provided with respective position detectors for detecting the position of the suspending tool and the position of the suspending tool. Crystal pulling device.
【請求項12】 請求項10又は請求項11に記載の単
結晶の引上げ装置において、前記吊持具の上昇速度Vb
は、直径制御装置によって制御されることを特徴とする
単結晶の引上げ装置。
12. The single crystal pulling apparatus according to claim 10 or 11, wherein the lifting speed Vb of the lifting tool is increased.
Is a single crystal pulling device, which is controlled by a diameter control device.
JP21205596A 1996-07-23 1996-07-23 Single crystal pulling method and apparatus Expired - Fee Related JP3528448B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP21205596A JP3528448B2 (en) 1996-07-23 1996-07-23 Single crystal pulling method and apparatus
US08/883,046 US5879448A (en) 1996-07-23 1997-06-26 Crystal pulling methods and apparatus
TW086109114A TW567253B (en) 1996-07-23 1997-06-28 Crystal pulling method and apparatus
DE69724886T DE69724886T2 (en) 1996-07-23 1997-07-02 Crystal pulling method and apparatus
EP97304827A EP0821083B1 (en) 1996-07-23 1997-07-02 Crystal pulling method and apparatus
KR1019970034543A KR980009530A (en) 1996-07-23 1997-07-23 Crystal raising method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21205596A JP3528448B2 (en) 1996-07-23 1996-07-23 Single crystal pulling method and apparatus

Publications (2)

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JPH1036187A JPH1036187A (en) 1998-02-10
JP3528448B2 true JP3528448B2 (en) 2004-05-17

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EP (1) EP0821083B1 (en)
JP (1) JP3528448B2 (en)
KR (1) KR980009530A (en)
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EP0821083B1 (en) 2003-09-17
TW567253B (en) 2003-12-21
EP0821083A1 (en) 1998-01-28
DE69724886T2 (en) 2004-07-08
JPH1036187A (en) 1998-02-10
US5879448A (en) 1999-03-09
KR980009530A (en) 1998-04-30
DE69724886D1 (en) 2003-10-23

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