SG11202008491QA - Substrate for radiofrequency applications and associated fabrication process - Google Patents
Substrate for radiofrequency applications and associated fabrication processInfo
- Publication number
- SG11202008491QA SG11202008491QA SG11202008491QA SG11202008491QA SG11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- fabrication process
- associated fabrication
- radiofrequency applications
- radiofrequency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Laminated Bodies (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1852795A FR3079662B1 (en) | 2018-03-30 | 2018-03-30 | SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF |
PCT/FR2019/050539 WO2019186010A1 (en) | 2018-03-30 | 2019-03-13 | Substrate for radiofrequency applications and associated manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202008491QA true SG11202008491QA (en) | 2020-10-29 |
Family
ID=62873475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202008491QA SG11202008491QA (en) | 2018-03-30 | 2019-03-13 | Substrate for radiofrequency applications and associated fabrication process |
Country Status (9)
Country | Link |
---|---|
US (1) | US11688627B2 (en) |
EP (1) | EP3776640B1 (en) |
JP (1) | JP7293537B2 (en) |
KR (1) | KR102567211B1 (en) |
CN (1) | CN111868914B (en) |
FR (1) | FR3079662B1 (en) |
SG (1) | SG11202008491QA (en) |
TW (1) | TWI818961B (en) |
WO (1) | WO2019186010A1 (en) |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3212921A (en) * | 1961-09-29 | 1965-10-19 | Ibm | Method of forming a glass film on an object and the product produced thereby |
US3909332A (en) * | 1973-06-04 | 1975-09-30 | Gen Electric | Bonding process for dielectric isolation of single crystal semiconductor structures |
DE2517743C3 (en) * | 1975-04-22 | 1980-03-06 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Passivating protective coating for silicon semiconductor components |
US4544576A (en) * | 1981-07-27 | 1985-10-01 | International Business Machines Corporation | Deep dielectric isolation by fused glass |
SE465492B (en) | 1990-01-24 | 1991-09-16 | Asea Brown Boveri | Semiconductor component containing a diamond layer arranged between a substrate and an active layer and process prior to its preparation |
IT1268123B1 (en) | 1994-10-13 | 1997-02-20 | Sgs Thomson Microelectronics | SLICE OF SEMICONDUCTOR MATERIAL FOR THE MANUFACTURE OF INTEGRATED DEVICES AND PROCEDURE FOR ITS MANUFACTURING. |
US6171931B1 (en) * | 1994-12-15 | 2001-01-09 | Sgs-Thomson Microelectronics S.R.L. | Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication |
WO2003036699A2 (en) * | 2001-10-23 | 2003-05-01 | Cambridge Semiconductor Limited | Lateral semiconductor-on-insulator structure and corresponding manufacturing methods |
WO2005031842A2 (en) * | 2003-09-26 | 2005-04-07 | Universite Catholique De Louvain | Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses |
JP2005229062A (en) * | 2004-02-16 | 2005-08-25 | Canon Inc | Soi substrate and its manufacturing method |
FR2877491B1 (en) * | 2004-10-29 | 2007-01-19 | Soitec Silicon On Insulator | COMPOSITE STRUCTURE WITH HIGH THERMAL DISSIPATION |
WO2012160961A1 (en) | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Semiconductor device production method and semiconductor device |
WO2013168314A1 (en) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | Semiconductor device production method and semiconductor device |
JP2015135858A (en) * | 2014-01-16 | 2015-07-27 | 日立化成株式会社 | Semiconductor substrate with passivation film and method of manufacturing the same, and solar battery element using the same and method of manufacturing the solar battery cell element |
KR102360695B1 (en) * | 2014-01-23 | 2022-02-08 | 글로벌웨이퍼스 씨오., 엘티디. | High resistivity soi wafers and a method of manufacturing thereof |
KR20160124796A (en) | 2014-02-21 | 2016-10-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Composite substrate |
FR3024587B1 (en) * | 2014-08-01 | 2018-01-26 | Soitec | METHOD FOR MANUFACTURING HIGHLY RESISTIVE STRUCTURE |
JP2016072540A (en) | 2014-09-30 | 2016-05-09 | 大日本印刷株式会社 | Rear surface protective sheet and solar cell module using the same |
JP6208646B2 (en) | 2014-09-30 | 2017-10-04 | 信越化学工業株式会社 | Bonded substrate, manufacturing method thereof, and supporting substrate for bonding |
FR3029682B1 (en) * | 2014-12-04 | 2017-12-29 | Soitec Silicon On Insulator | HIGH RESISTIVITY SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
DE102015006971A1 (en) * | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Method for producing low-loss multi-component wafers |
KR102378823B1 (en) * | 2015-09-07 | 2022-03-28 | 삼성전자주식회사 | Methods of manufacturing semiconductor substrates and semiconductor light emitting device thereof |
JP6465785B2 (en) * | 2015-10-14 | 2019-02-06 | クアーズテック株式会社 | Compound semiconductor substrate |
FR3049763B1 (en) * | 2016-03-31 | 2018-03-16 | Soitec | SEMICONDUCTOR SUBSTRATE ON INSULATION FOR RF APPLICATIONS |
-
2018
- 2018-03-30 FR FR1852795A patent/FR3079662B1/en active Active
-
2019
- 2019-03-13 JP JP2020543844A patent/JP7293537B2/en active Active
- 2019-03-13 EP EP19715973.4A patent/EP3776640B1/en active Active
- 2019-03-13 KR KR1020207025786A patent/KR102567211B1/en active IP Right Grant
- 2019-03-13 US US16/982,986 patent/US11688627B2/en active Active
- 2019-03-13 WO PCT/FR2019/050539 patent/WO2019186010A1/en active Application Filing
- 2019-03-13 SG SG11202008491QA patent/SG11202008491QA/en unknown
- 2019-03-13 CN CN201980019354.1A patent/CN111868914B/en active Active
- 2019-03-14 TW TW108108634A patent/TWI818961B/en active
Also Published As
Publication number | Publication date |
---|---|
EP3776640A1 (en) | 2021-02-17 |
CN111868914B (en) | 2024-06-21 |
US11688627B2 (en) | 2023-06-27 |
KR102567211B1 (en) | 2023-08-16 |
TWI818961B (en) | 2023-10-21 |
CN111868914A (en) | 2020-10-30 |
EP3776640C0 (en) | 2023-10-11 |
FR3079662A1 (en) | 2019-10-04 |
EP3776640B1 (en) | 2023-10-11 |
JP2021516864A (en) | 2021-07-08 |
KR20200138196A (en) | 2020-12-09 |
FR3079662B1 (en) | 2020-02-28 |
TW201942090A (en) | 2019-11-01 |
US20210028057A1 (en) | 2021-01-28 |
JP7293537B2 (en) | 2023-06-20 |
WO2019186010A1 (en) | 2019-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3345215A4 (en) | Semiconductor apparatus and method of manufacturing the same | |
SG10202011613YA (en) | Substrate processing apparatus | |
EP3474643A4 (en) | Ceramic substrate and manufacturing method therefor | |
SG10201607776YA (en) | Structure For Radiofrequency Applications And Process For Manufacturing Such A Structure | |
IL279273B (en) | Metrology and process control for semiconductor manufacturing | |
EP3561954A4 (en) | Antenna substrate and manufacturing method therefor | |
EP3439442A4 (en) | Ceramic substrate and production method for same | |
EP3624597C0 (en) | Pulse-based pasta and process for manufacturing the same | |
SG10201907085QA (en) | Semiconductor substrate processing method | |
GB2543968B (en) | Coir substrate and apparatus and method for the production thereof | |
SG10201705501WA (en) | Substrate processing apparatus | |
EP3690943A4 (en) | Array substrate and fabrication method therefor | |
KR102039240B9 (en) | Substrate processing apparatus | |
SG11202105731RA (en) | Semiconductor-on-insulator substrate for radio-frequency applications | |
EP3608950A4 (en) | Tft substrate and manufacturing method thereof | |
EP3637964A4 (en) | Ceramic circuit substrate | |
EP3313150A4 (en) | Method for manufacturing organic electronic element, and method for drying substrate | |
SG10201704204RA (en) | Process For The Manufacture Of A High Resistivity Semiconductor Substrate | |
HUE056047T2 (en) | Metal-ceramic substrate and its manufacturing method | |
EP3171390A4 (en) | Thin substrate, method for manufacturing same, and method for transporting substrate | |
EP3731279A4 (en) | Substrate and manufacturing method therefor, and electronic apparatus | |
EP3588563A4 (en) | Array substrate and method for manufacturing same | |
SG11201912232WA (en) | Etching method and plasma etching material | |
EP3522208A4 (en) | Substrate placement stage, and substrate placement stage fabrication method | |
GB201901234D0 (en) | Integrated circuit manufacturing process and apparatus |