SG11202008491QA - Substrate for radiofrequency applications and associated fabrication process - Google Patents

Substrate for radiofrequency applications and associated fabrication process

Info

Publication number
SG11202008491QA
SG11202008491QA SG11202008491QA SG11202008491QA SG11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA SG 11202008491Q A SG11202008491Q A SG 11202008491QA
Authority
SG
Singapore
Prior art keywords
substrate
fabrication process
associated fabrication
radiofrequency applications
radiofrequency
Prior art date
Application number
SG11202008491QA
Inventor
Frédéric Allibert
Christelle Veytizou
Damien Radisson
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11202008491QA publication Critical patent/SG11202008491QA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Laminated Bodies (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Products (AREA)
SG11202008491QA 2018-03-30 2019-03-13 Substrate for radiofrequency applications and associated fabrication process SG11202008491QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852795A FR3079662B1 (en) 2018-03-30 2018-03-30 SUBSTRATE FOR RADIO FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF
PCT/FR2019/050539 WO2019186010A1 (en) 2018-03-30 2019-03-13 Substrate for radiofrequency applications and associated manufacturing method

Publications (1)

Publication Number Publication Date
SG11202008491QA true SG11202008491QA (en) 2020-10-29

Family

ID=62873475

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202008491QA SG11202008491QA (en) 2018-03-30 2019-03-13 Substrate for radiofrequency applications and associated fabrication process

Country Status (9)

Country Link
US (1) US11688627B2 (en)
EP (1) EP3776640B1 (en)
JP (1) JP7293537B2 (en)
KR (1) KR102567211B1 (en)
CN (1) CN111868914B (en)
FR (1) FR3079662B1 (en)
SG (1) SG11202008491QA (en)
TW (1) TWI818961B (en)
WO (1) WO2019186010A1 (en)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212921A (en) * 1961-09-29 1965-10-19 Ibm Method of forming a glass film on an object and the product produced thereby
US3909332A (en) * 1973-06-04 1975-09-30 Gen Electric Bonding process for dielectric isolation of single crystal semiconductor structures
DE2517743C3 (en) * 1975-04-22 1980-03-06 Jenaer Glaswerk Schott & Gen., 6500 Mainz Passivating protective coating for silicon semiconductor components
US4544576A (en) * 1981-07-27 1985-10-01 International Business Machines Corporation Deep dielectric isolation by fused glass
SE465492B (en) 1990-01-24 1991-09-16 Asea Brown Boveri Semiconductor component containing a diamond layer arranged between a substrate and an active layer and process prior to its preparation
IT1268123B1 (en) 1994-10-13 1997-02-20 Sgs Thomson Microelectronics SLICE OF SEMICONDUCTOR MATERIAL FOR THE MANUFACTURE OF INTEGRATED DEVICES AND PROCEDURE FOR ITS MANUFACTURING.
US6171931B1 (en) * 1994-12-15 2001-01-09 Sgs-Thomson Microelectronics S.R.L. Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
WO2003036699A2 (en) * 2001-10-23 2003-05-01 Cambridge Semiconductor Limited Lateral semiconductor-on-insulator structure and corresponding manufacturing methods
WO2005031842A2 (en) * 2003-09-26 2005-04-07 Universite Catholique De Louvain Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
JP2005229062A (en) * 2004-02-16 2005-08-25 Canon Inc Soi substrate and its manufacturing method
FR2877491B1 (en) * 2004-10-29 2007-01-19 Soitec Silicon On Insulator COMPOSITE STRUCTURE WITH HIGH THERMAL DISSIPATION
WO2012160961A1 (en) 2011-05-23 2012-11-29 新電元工業株式会社 Semiconductor device production method and semiconductor device
WO2013168314A1 (en) * 2012-05-08 2013-11-14 新電元工業株式会社 Semiconductor device production method and semiconductor device
JP2015135858A (en) * 2014-01-16 2015-07-27 日立化成株式会社 Semiconductor substrate with passivation film and method of manufacturing the same, and solar battery element using the same and method of manufacturing the solar battery cell element
KR102360695B1 (en) * 2014-01-23 2022-02-08 글로벌웨이퍼스 씨오., 엘티디. High resistivity soi wafers and a method of manufacturing thereof
KR20160124796A (en) 2014-02-21 2016-10-28 신에쓰 가가꾸 고교 가부시끼가이샤 Composite substrate
FR3024587B1 (en) * 2014-08-01 2018-01-26 Soitec METHOD FOR MANUFACTURING HIGHLY RESISTIVE STRUCTURE
JP2016072540A (en) 2014-09-30 2016-05-09 大日本印刷株式会社 Rear surface protective sheet and solar cell module using the same
JP6208646B2 (en) 2014-09-30 2017-10-04 信越化学工業株式会社 Bonded substrate, manufacturing method thereof, and supporting substrate for bonding
FR3029682B1 (en) * 2014-12-04 2017-12-29 Soitec Silicon On Insulator HIGH RESISTIVITY SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
DE102015006971A1 (en) * 2015-04-09 2016-10-13 Siltectra Gmbh Method for producing low-loss multi-component wafers
KR102378823B1 (en) * 2015-09-07 2022-03-28 삼성전자주식회사 Methods of manufacturing semiconductor substrates and semiconductor light emitting device thereof
JP6465785B2 (en) * 2015-10-14 2019-02-06 クアーズテック株式会社 Compound semiconductor substrate
FR3049763B1 (en) * 2016-03-31 2018-03-16 Soitec SEMICONDUCTOR SUBSTRATE ON INSULATION FOR RF APPLICATIONS

Also Published As

Publication number Publication date
EP3776640A1 (en) 2021-02-17
CN111868914B (en) 2024-06-21
US11688627B2 (en) 2023-06-27
KR102567211B1 (en) 2023-08-16
TWI818961B (en) 2023-10-21
CN111868914A (en) 2020-10-30
EP3776640C0 (en) 2023-10-11
FR3079662A1 (en) 2019-10-04
EP3776640B1 (en) 2023-10-11
JP2021516864A (en) 2021-07-08
KR20200138196A (en) 2020-12-09
FR3079662B1 (en) 2020-02-28
TW201942090A (en) 2019-11-01
US20210028057A1 (en) 2021-01-28
JP7293537B2 (en) 2023-06-20
WO2019186010A1 (en) 2019-10-03

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