SG11202002561SA - Multiple-layer quantum-dot led and method of fabricating same - Google Patents

Multiple-layer quantum-dot led and method of fabricating same

Info

Publication number
SG11202002561SA
SG11202002561SA SG11202002561SA SG11202002561SA SG11202002561SA SG 11202002561S A SG11202002561S A SG 11202002561SA SG 11202002561S A SG11202002561S A SG 11202002561SA SG 11202002561S A SG11202002561S A SG 11202002561SA SG 11202002561S A SG11202002561S A SG 11202002561SA
Authority
SG
Singapore
Prior art keywords
dot led
layer quantum
fabricating same
quantum
fabricating
Prior art date
Application number
SG11202002561SA
Other languages
English (en)
Inventor
Mohammad Rahmati
Majid Pahlevani (A K A Majid Pahlevaninezhad)
Sam Scherwitz
Original Assignee
10644137 Canada Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 10644137 Canada Inc filed Critical 10644137 Canada Inc
Publication of SG11202002561SA publication Critical patent/SG11202002561SA/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2111/00—Details relating to CAD techniques
    • G06F2111/10—Numerical modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Evolutionary Computation (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
SG11202002561SA 2017-10-13 2018-10-15 Multiple-layer quantum-dot led and method of fabricating same SG11202002561SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762572056P 2017-10-13 2017-10-13
PCT/CA2018/051297 WO2019071362A1 (en) 2017-10-13 2018-10-15 QUANTIC MULTI-LAYER POINT LED AND METHOD FOR MANUFACTURING THE SAME

Publications (1)

Publication Number Publication Date
SG11202002561SA true SG11202002561SA (en) 2020-04-29

Family

ID=66100218

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002561SA SG11202002561SA (en) 2017-10-13 2018-10-15 Multiple-layer quantum-dot led and method of fabricating same

Country Status (8)

Country Link
US (1) US11302883B2 (zh)
EP (1) EP3669403A4 (zh)
JP (1) JP2020537338A (zh)
KR (1) KR20200063221A (zh)
CN (1) CN111213247A (zh)
CA (1) CA3074241C (zh)
SG (1) SG11202002561SA (zh)
WO (1) WO2019071362A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210351320A1 (en) * 2018-10-25 2021-11-11 Sharp Kabushiki Kaisha Light-Emitting Element
KR20200049980A (ko) * 2018-10-30 2020-05-11 엘지디스플레이 주식회사 양자점 필름, 엘이디 패키지, 발광다이오드 및 표시장치
CN113498631A (zh) * 2019-02-26 2021-10-12 夏普株式会社 发光元件、发光装置
US11893149B2 (en) * 2019-04-03 2024-02-06 The Johns Hopkins University Flexible transparent membrane light emitting diode array and systems containing the same
EP3730589B1 (en) * 2019-04-26 2022-01-05 Samsung Electronics Co., Ltd. Light emitting device and display device including the same
CN113314675B (zh) * 2020-02-27 2023-01-20 京东方科技集团股份有限公司 一种量子点发光器件及制备方法、显示装置
WO2021174412A1 (zh) * 2020-03-03 2021-09-10 东莞市中麒光电技术有限公司 发光二极管及其制备方法
WO2023283715A1 (en) * 2021-07-12 2023-01-19 10644137 Canada Inc. Integrated optoelectronic devices for lighting and display applications
CN113851594A (zh) * 2021-09-27 2021-12-28 合肥福纳科技有限公司 量子点发光器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7597967B2 (en) 2004-12-17 2009-10-06 Eastman Kodak Company Phosphorescent OLEDs with exciton blocking layer
US8877367B2 (en) 2009-01-16 2014-11-04 The Board Of Trustees Of The Leland Stanford Junior University High energy storage capacitor by embedding tunneling nano-structures
US20120274231A1 (en) * 2011-04-26 2012-11-01 Chang-Ching Tu Colloidal Silicon Quantum Dot Visible Spectrum Light-Emitting Diode
SG2014014286A (en) * 2011-10-31 2014-04-28 Univ Nanyang Tech A light-emitting device
CN105185814B (zh) * 2015-09-24 2017-11-10 京东方科技集团股份有限公司 一种有机电致发光显示装置
KR102415248B1 (ko) * 2015-12-29 2022-06-30 삼성디스플레이 주식회사 양자점 및 이를 이용한 발광 소자
CN105552244B (zh) * 2016-02-17 2018-09-11 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置
CN105870349B (zh) * 2016-06-06 2017-09-26 京东方科技集团股份有限公司 发光二极管及其制备方法、发光器件
CN106410057B (zh) * 2016-11-08 2019-05-24 Tcl集团股份有限公司 量子阱能级结构的qled器件
CN106784208A (zh) 2016-11-23 2017-05-31 南昌大学 一种AlInGaN基多量子阱发光二极管的外延结构

Also Published As

Publication number Publication date
CA3074241C (en) 2021-01-19
US20200235326A1 (en) 2020-07-23
KR20200063221A (ko) 2020-06-04
CA3074241A1 (en) 2019-04-18
EP3669403A1 (en) 2020-06-24
JP2020537338A (ja) 2020-12-17
EP3669403A4 (en) 2021-06-02
US11302883B2 (en) 2022-04-12
WO2019071362A1 (en) 2019-04-18
CN111213247A (zh) 2020-05-29

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