SG11202001953SA - Metal mesh light pipe for transporting light in an image sensor - Google Patents
Metal mesh light pipe for transporting light in an image sensorInfo
- Publication number
- SG11202001953SA SG11202001953SA SG11202001953SA SG11202001953SA SG11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA SG 11202001953S A SG11202001953S A SG 11202001953SA
- Authority
- SG
- Singapore
- Prior art keywords
- light
- image sensor
- metal mesh
- transporting
- light pipe
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/51—Housings
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/705—Pixels for depth measurement, e.g. RGBZ
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762573612P | 2017-10-17 | 2017-10-17 | |
US16/161,958 US10608036B2 (en) | 2017-10-17 | 2018-10-16 | Metal mesh light pipe for transporting light in an image sensor |
PCT/US2018/056238 WO2019079415A1 (en) | 2017-10-17 | 2018-10-17 | Metal mesh light pipe for transporting light in an image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202001953SA true SG11202001953SA (en) | 2020-05-28 |
Family
ID=66096033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202001953SA SG11202001953SA (en) | 2017-10-17 | 2018-10-17 | Metal mesh light pipe for transporting light in an image sensor |
Country Status (7)
Country | Link |
---|---|
US (1) | US10608036B2 (en) |
EP (1) | EP3698406B1 (en) |
CN (1) | CN111213239B (en) |
BR (1) | BR112020007363A2 (en) |
SG (1) | SG11202001953SA (en) |
TW (1) | TW201929254A (en) |
WO (1) | WO2019079415A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11037966B2 (en) * | 2017-09-22 | 2021-06-15 | Qualcomm Incorporated | Solid state image sensor with on-chip filter and extended spectral response |
CN111712921A (en) * | 2017-12-12 | 2020-09-25 | 拉芳德利责任有限公司 | Semiconductor optical sensor for visible and ultraviolet light detection and corresponding manufacturing process |
DE102018126421A1 (en) | 2018-09-27 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co. Ltd. | BAND PASS FILTER FOR STACKED SENSOR |
US10651225B2 (en) * | 2018-09-27 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Band-pass filter for stacked sensor |
FR3093377B1 (en) * | 2019-03-01 | 2021-02-26 | Isorg | COLOR AND INFRARED IMAGE SENSOR |
FR3093376B1 (en) | 2019-03-01 | 2022-09-02 | Isorg | COLOR AND INFRARED IMAGE SENSOR |
CN111403428A (en) * | 2020-03-23 | 2020-07-10 | 中山大学 | Photoelectric sensor, random-readable active pixel circuit, image sensor, and camera device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100487898C (en) * | 2001-11-05 | 2009-05-13 | 佐伊科比株式会社 | Solid-state image sensor and its production method |
US20040135209A1 (en) * | 2002-02-05 | 2004-07-15 | Tzu-Chiang Hsieh | Camera with MOS or CMOS sensor array |
US20070045642A1 (en) * | 2005-08-25 | 2007-03-01 | Micron Technology, Inc. | Solid-state imager and formation method using anti-reflective film for optical crosstalk reduction |
US7524694B2 (en) * | 2005-12-16 | 2009-04-28 | International Business Machines Corporation | Funneled light pipe for pixel sensors |
US7777287B2 (en) * | 2006-07-12 | 2010-08-17 | Micron Technology, Inc. | System and apparatus providing analytical device based on solid state image sensor |
US8237832B2 (en) * | 2008-05-30 | 2012-08-07 | Omnivision Technologies, Inc. | Image sensor with focusing interconnections |
US8054355B2 (en) * | 2008-10-16 | 2011-11-08 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
JP2011216701A (en) * | 2010-03-31 | 2011-10-27 | Sony Corp | Solid-state imaging apparatus and electronic device |
US9294691B2 (en) * | 2011-09-06 | 2016-03-22 | Sony Corporation | Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method |
CN103258835A (en) * | 2013-05-02 | 2013-08-21 | 上海华力微电子有限公司 | Method for forming light channel in CIS component |
JP6196911B2 (en) | 2014-02-05 | 2017-09-13 | オリンパス株式会社 | Solid-state imaging device and imaging device |
US9786705B2 (en) | 2015-12-21 | 2017-10-10 | Qualcomm Incorporated | Solid state image sensor with extended spectral response |
-
2018
- 2018-10-16 US US16/161,958 patent/US10608036B2/en active Active
- 2018-10-17 WO PCT/US2018/056238 patent/WO2019079415A1/en unknown
- 2018-10-17 TW TW107136592A patent/TW201929254A/en unknown
- 2018-10-17 EP EP18799632.7A patent/EP3698406B1/en active Active
- 2018-10-17 BR BR112020007363-6A patent/BR112020007363A2/en not_active Application Discontinuation
- 2018-10-17 SG SG11202001953SA patent/SG11202001953SA/en unknown
- 2018-10-17 CN CN201880066661.0A patent/CN111213239B/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10608036B2 (en) | 2020-03-31 |
WO2019079415A1 (en) | 2019-04-25 |
US20190115386A1 (en) | 2019-04-18 |
BR112020007363A2 (en) | 2020-09-29 |
CN111213239A (en) | 2020-05-29 |
EP3698406C0 (en) | 2023-12-27 |
CN111213239B (en) | 2021-07-16 |
TW201929254A (en) | 2019-07-16 |
EP3698406A1 (en) | 2020-08-26 |
EP3698406B1 (en) | 2023-12-27 |
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