CN103258835A - Method for forming light channel in CIS component - Google Patents
Method for forming light channel in CIS component Download PDFInfo
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- CN103258835A CN103258835A CN2013101572751A CN201310157275A CN103258835A CN 103258835 A CN103258835 A CN 103258835A CN 2013101572751 A CN2013101572751 A CN 2013101572751A CN 201310157275 A CN201310157275 A CN 201310157275A CN 103258835 A CN103258835 A CN 103258835A
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Abstract
The invention discloses a method for forming a light channel in a CIS component. The method includes the steps that a photosensitive element is embedded into a substrate, the substrate in which the photosensitive element is embedded is provided with a plurality of NDC layers in a laminating mode, a metal layer and a medium layer are arranged in each NDC layer, wherein each medium layer is arranged under each metal layer except the metal layer of the bottom, and the NDC layers and laminating layers of metal layers above the photosensitive element are etched at one time to form the light channel so that incident light can be inducted by the photosensitive element. As the NDC layers and the laminating layers of the metal layers above the photosensitive element are etched at one time to form the light channel so that the incident light can be inducted by the photosensitive element, the defects that the technical process is complex, production efficiency is low and cost of CIS components is high due to the fact that a plurality of etching procedures are needed for etching the NDC layers and the metal layers in a layer-by-layer mode in the prior art can be avoided.
Description
Technical field
The invention belongs to technical field of semiconductors, specifically, relate to the formation method of optical channel in a kind of CIS device.
Background technology
Present charge coupled device (charge coupled device, CCD) be main practicability solid state image sensor, have that the noise of reading is low, dynamic range is big, the response sensitivity advantages of higher, but the CCD device be difficult to simultaneously with main flow complementary metal oxide semiconductors (CMOS) (complementary-metal-oxide-semiconductor, CMOS) technology compatible shortcoming mutually, namely the imageing sensor based on electrically charged coupled apparatus is difficult to realize that single-chip is integrated.And cmos image sensor (CMOS image sensor CIS) owing to adopt the technology identical with COMS, can effectively be integrated in pel array and peripheral circuit on the same chip.Compare with the CCD device, the CIS device has that volume is little, in light weight, low in energy consumption, programming is convenient, be easy to control and advantage that average unit cost is low.In addition, although the CCD device may be better than the CIS device aspect picture quality, still, along with improving constantly of CIS technology, the picture quality of a part of CIS is close to the CCD of same specification.Therefore, the use of CIS device more and more widely.The general principle of CIS device is to utilize the COMS technology to form photosensitive structure and by this photosensitive structure photoelectric conversion signal is transported to peripheral circuit in semiconductor to carry out subsequent treatment.And in the processing procedure of CIS device, the formation of optical channel becomes one of key factor of restriction device performance.
In the prior art, the formation method of optical channel in the CIS device of prior art, normally after substrate forms light sensitive diode, on substrate, form the intermediate medium stack layer of some layers of carbonitride of silicium NDC layer and metal level more respectively, but, because these intermediate medium stack layers have higher reflectivity, the logical light effect of influence, therefore, get rid of NDC layer and the metal level that is positioned at directly over the light sensitive diode by the technology gradation of etching successively.But, because successively etching N DC layer and metal level need the multi-section etch step, complex technical process, production efficiency is low, and CIS device cost height has restricted application and the development of CIS device to a certain extent.
Summary of the invention
Technical problem to be solved by this invention provides the formation method of optical channel in a kind of CIS device, in order to solve the problems of the technologies described above at least.
For solving the problems of the technologies described above, the invention provides the formation method of optical channel in a kind of CIS device, it comprises:
In substrate, be embedded photo-sensitive cell;
The mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and forms a metal level in every layer of NDC layer, and the dielectric layer under other every layer metal level except the orlop metal level;
The disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away to form optical channel, makes incident light be responded to by described photo-sensitive cell.
Preferably, in one embodiment of this invention, also comprise before etching away the lamination that comprises multilayer NDC layer and metal level directly over the described photo-sensitive cell disposable:
NDC layer at top layer forms a photoresist, to carry out mask.
Preferably, in one embodiment of this invention, when etching away the lamination of the multilayer NDC layer that comprises directly over the described photo-sensitive cell and metal level, adopt dry plasma etch disposable.
Preferably, in one embodiment of this invention, when etching away the lamination of the multilayer NDC layer that comprises directly over the described photo-sensitive cell and metal level, adopt the depth groove mode to carry out etching disposable.
Preferably, in one embodiment of this invention, disposablely etch away the multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level comprises:
Disposable multilayer NDC layer and the metal level that comprises directly over the described photo-sensitive cell that etch away is to form depth groove;
Deposited semiconductor material layer on the inwall of described depth groove;
In the depth groove that has deposited semiconductor material layer, fill light transmissive material, with the described optical channel of final formation.
Preferably, in one embodiment of this invention, on the inwall of described depth groove, during the deposited semiconductor material layer, select the SiN material for use.
Preferably, in one embodiment of this invention, when filling light transmissive material in the depth groove that has deposited semiconductor material layer, light transmissive material is selected organic silicone grease for use.
For solving the problems of the technologies described above, the present invention provides a kind of formation method of CIS device again, and it comprises:
In substrate, be embedded photo-sensitive cell;
The mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and forms a metal level in every layer of NDC layer, and the dielectric layer under other every layer metal level except the orlop metal level;
The disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away to form optical channel, makes incident light be responded to by described photo-sensitive cell;
In multilayer NDC layer, form filter layer and microlens layer successively on the top layer NDC layer.
Preferably, in one embodiment of this invention, disposablely etch away the multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level comprises:
Etch away the multilayer NDC layer and the metal level that comprise directly over the described photo-sensitive cell, to form depth groove;
Deposited semiconductor material layer on the inwall of described depth groove;
In the depth groove that has deposited semiconductor material layer, fill light transmissive material, with the described optical channel of final formation.
Among the present invention, by in substrate, being embedded photo-sensitive cell, the mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and forms a metal level in every layer of NDC layer, and the dielectric layer under other every layer metal level except the orlop metal level; The disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away, to form optical channel, incident light is responded to, defective such as complex technical process, the production efficiency of having avoided in the prior art successively etching N DC layer and metal level to need the multi-section etch step to cause is low, CIS device cost height by described photo-sensitive cell.
Description of drawings
Fig. 1 is the formation method flow diagram of optical channel in the CIS device of the embodiment of the invention one;
Fig. 2 is for being embedded the generalized section of photo-sensitive cell in substrate among the step S101;
Fig. 3 be among the step S102 on substrate gradation form the generalized section of multilayer NDC layer and metal level;
Fig. 4 is the particular flow sheet of the formation optical channel of the embodiment of the invention two;
Fig. 5 is for forming the generalized section of depth groove;
Fig. 6 is the generalized section of deposited semiconductor material layer on the inwall of depth groove;
Fig. 7 is for filling the generalized section of light transmissive material in the depth groove that has deposited semiconductor material layer;
Fig. 8 is the formation method flow diagram of the embodiment of the invention three CIS devices;
Fig. 9 is for forming the generalized section of filter layer and microlens layer.
Embodiment
Below will cooperate graphic and embodiment describes embodiments of the present invention in detail, by this to the present invention how the application technology means implementation procedure that solves technical problem and reach the technology effect can fully understand and implement according to this.
Among the following embodiment of the present invention, by in substrate, being embedded photo-sensitive cell, the mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and in every layer of NDC layer, form a metal level, and the dielectric layer under other every layer metal level except the orlop metal level; The disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away, to form optical channel, incident light is responded to, defective such as complex technical process, the production efficiency of having avoided in the prior art successively etching N DC layer and metal level to need the multi-section etch step to cause is low, CIS device cost height by described photo-sensitive cell.
As shown in Figure 1, be the formation method flow diagram of optical channel in the CIS device of the embodiment of the invention one, it can comprise:
Step S101, in substrate, be embedded photo-sensitive cell;
As shown in Figure 2, for be embedded the generalized section of photo-sensitive cell among the step S101 in substrate, substrate 101 can select for use semi-conducting material to make, and photo-sensitive cell 102 is such as being light sensitive diode.
Step S102, form multilayer NDC layer in the mode gradation of the described substrate that has been embedded described photo-sensitive cell by lamination, and in every layer of NDC layer, form a metal level, and the dielectric layer under other every layer metal level except the orlop metal level;
As shown in Figure 3, among the step S102 on substrate gradation form the generalized section of multilayer NDC layer and metal level, be provided with metal level 104 in every layer of NDC layer 103 and be formed on dielectric layer 105 under the metal level 104.Need to prove, the effect of metal level 104 is the signal of telecommunication after the opto-electronic conversion to be outputed to peripheral circuit carry out subsequent treatment, as for being set, parent metal layer 104 depends on actual arts demand, those of ordinary skills can require to carry out flexible design according to reality, do not repeat them here.
Need to prove, when forming metal level, can utilize physical sputtering deposition and electroplating deposition technology, form the metal level of Cu material by magnetron sputtering board and ECP board.But, when forming metal level, also be not limited to these concrete process equipment and process conditions, also can utilize other equipment, as long as can form metal level.
Step S103, the disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away to form optical channel, make incident light be responded to by described photo-sensitive cell.
In the present embodiment, among the step S103, also comprise before etching away the lamination that comprises multilayer NDC layer and metal level directly over the described photo-sensitive cell disposable: the NDC layer at top layer forms one deck photoresist PR, to carry out mask process.In the present embodiment, among the step S103, when etching away the lamination of the multilayer NDC layer that comprises directly over the described photo-sensitive cell and metal level, adopt dry plasma etch disposable.In the present embodiment, among the step S103, when etching away the lamination of the multilayer NDC layer that comprises directly over the described photo-sensitive cell and metal level, adopt the depth groove mode to carry out etching disposable.At etching multilayer NDC layer, the NDC layer can doublely be done the usefulness on barrier layer, thereby provides cost savings.
As shown in Figure 4, be the particular flow sheet of the formation optical channel of the embodiment of the invention two, it can comprise:
Step S113, disposable multilayer NDC layer and the metal level that comprises directly over the described photo-sensitive cell that etch away are to form depth groove;
As shown in Figure 5, be positioned at multilayer NDC layer and the metal level that comprises directly over the described photo-sensitive cell for forming the generalized section of depth groove, having removed, thereby formed depth groove 106.
Step S123, on the inwall of described depth groove the deposited semiconductor material layer;
As shown in Figure 6, be the generalized section of deposited semiconductor material layer on the inwall of depth groove, deposited semiconductor material layer 107 at the inwall of depth groove 106, in the present embodiment, on the inwall of described depth groove, during the deposited semiconductor material layer, select the SiN material for use among the step S123.Need to prove, deposited semiconductor material layer on the inwall of described depth groove, its material is not limited to the SiN material, also can select the material that other performances are better, cost is lower for use, does not repeat them here.During the deposited semiconductor material layer, can utilize the chemical vapour deposition (CVD) board, deposit on the inwall at N atmosphere decline silicon organic substance such as SiN.
Step S133, in the depth groove that has deposited semiconductor material layer, fill light transmissive material, with the described optical channel of final formation.
As shown in Figure 7, in the depth groove that has deposited semiconductor material layer, filling the generalized section of light transmissive material, in depth groove 106, behind deposited semiconductor material layer 107, in depth groove 106, filled up light transmissive material.In the present embodiment, when filling light transmissive material among the step S133 in the depth groove that has deposited semiconductor material layer, light transmissive material is selected organic silicone grease for use.Need to prove that when filling light transmissive material in the depth groove that has deposited semiconductor material layer, light transmissive material is not limited to organic silicone grease, also can select the material that other performances are better, cost is lower for use, does not repeat them here.
In the prior art, for fear of being positioned at the reflection to light of multilayer NDC layer on the optical channel and metal level, the image impingement rate needs through multiple etching, to get rid of multilayer NDC layer and the metal level that is positioned on the optical channel respectively, the processing step that causes thus is loaded down with trivial details.And in the present embodiment, then be, based on disposable multilayer NDC layer and the metal level that etches away on the optical channel, preferred depth groove (the DT that adopts, deep trench), thus disposable all NDC layer and metal levels that etch away on the optical channel, thus the light loss that reduces on the optical channel consumes, improve the photosensitive property of photo-sensitive cell, improve the resolution of CIS device.
Need to prove when depth groove, use which type of equipment, which type of process conditions is also noted that other what problems simultaneously, thereby could effectively finish disposable etching.
As shown in Figure 8, be the formation method flow diagram of the embodiment of the invention three CIS devices, it can comprise:
Step S301, in substrate, be embedded photo-sensitive cell;
Step S302, the mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and forms a metal level in every layer of NDC layer, and the dielectric layer under other every layer metal level except the orlop metal level;
Step S303, the disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away to form optical channel, make incident light be responded to by described photo-sensitive cell;
Step S301-step S303 in the present embodiment does not repeat them here, can be referring to the relevant record of above-mentioned Fig. 1-Fig. 6.
Step S304, in multilayer NDC layer, form filter layer and microlens layer successively on the top layer NDC layer.
As shown in Figure 9, for forming the generalized section of filter layer and microlens layer, formed filter layer 108 and microlens layer 109 at top layer NDC layer 103, thereby finally finished the processing procedure of CIS device.Specifically about how forming filter layer 108 can not repeat them here with reference to the relevant record of prior art with microlens layer 109.
Above-mentioned explanation illustrates and has described some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the disclosed form of this paper, should not regard the eliminating to other embodiment as, and can be used for various other combinations, modification and environment, and can in invention contemplated scope described herein, change by technology or the knowledge of above-mentioned instruction or association area.And the change that those skilled in the art carry out and variation do not break away from the spirit and scope of the present invention, then all should be in the protection range of claims of the present invention.
Claims (9)
1. the formation method of optical channel in the CIS device is characterized in that, comprising:
In substrate, be embedded photo-sensitive cell;
The mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and forms a metal level in every layer of NDC layer, and the dielectric layer under other every layer metal level except the orlop metal level;
The disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away to form optical channel, makes incident light be responded to by described photo-sensitive cell.
2. method according to claim 1 is characterized in that, also comprises before etching away the lamination that comprises multilayer NDC layer and metal level directly over the described photo-sensitive cell disposable:
NDC layer at top layer forms a photoresist PR, to carry out mask.
3. method according to claim 1 is characterized in that, when etching away the lamination of the multilayer NDC layer that comprises directly over the described photo-sensitive cell and metal level, adopts dry plasma etch disposable.
4. method according to claim 1 is characterized in that, when etching away the lamination of the multilayer NDC layer that comprises directly over the described photo-sensitive cell and metal level, adopts the depth groove mode to carry out etching disposable.
5. method according to claim 1 is characterized in that, disposablely etches away the multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level comprises:
Disposable multilayer NDC layer and the metal level that comprises directly over the described photo-sensitive cell that etch away is to form depth groove;
Deposited semiconductor material layer on the inwall of described depth groove;
In the depth groove that has deposited semiconductor material layer, fill light transmissive material, with the described optical channel of final formation.
6. method according to claim 5 is characterized in that, during the deposited semiconductor material layer, selects the SiN material for use on the inwall of described depth groove.
7. method according to claim 5 is characterized in that, when filling light transmissive material in the depth groove that has deposited semiconductor material layer, light transmissive material is selected organic silicone grease for use.
8. the formation method of a CIS device is characterized in that, comprising:
In substrate, be embedded photo-sensitive cell;
The mode by lamination forms multilayer NDC layer on the described substrate of described photo-sensitive cell being embedded, and forms a metal level in every layer of NDC layer, and the dielectric layer under other every layer metal level except the orlop metal level;
The disposable multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level of etching away to form optical channel, makes incident light be responded to by described photo-sensitive cell;
In multilayer NDC layer, form filter layer and microlens layer successively on the top layer NDC layer.
9. method according to claim 8 is characterized in that, disposablely etches away the multilayer NDC layer that comprises directly over the described photo-sensitive cell and the lamination of metal level comprises:
Etch away the multilayer NDC layer and the metal level that comprise directly over the described photo-sensitive cell, to form depth groove;
Deposited semiconductor material layer on the inwall of described depth groove;
In the depth groove that has deposited semiconductor material layer, fill light transmissive material, with the described optical channel of final formation.
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| CN2013101572751A CN103258835A (en) | 2013-05-02 | 2013-05-02 | Method for forming light channel in CIS component |
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| CN103441134A (en) * | 2013-09-02 | 2013-12-11 | 上海集成电路研发中心有限公司 | Pixel array of CIS |
| CN103594478A (en) * | 2013-11-13 | 2014-02-19 | 上海华力微电子有限公司 | Manufacturing method for photodiode light path |
| CN111213239A (en) * | 2017-10-17 | 2020-05-29 | 高通股份有限公司 | Metal mesh light pipe for transmitting light in image sensor |
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Application publication date: 20130821 |