SG11202001640SA - Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal - Google Patents

Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal

Info

Publication number
SG11202001640SA
SG11202001640SA SG11202001640SA SG11202001640SA SG11202001640SA SG 11202001640S A SG11202001640S A SG 11202001640SA SG 11202001640S A SG11202001640S A SG 11202001640SA SG 11202001640S A SG11202001640S A SG 11202001640SA SG 11202001640S A SG11202001640S A SG 11202001640SA
Authority
SG
Singapore
Prior art keywords
single crystal
doped
orientation
silicon
producing
Prior art date
Application number
SG11202001640SA
Inventor
Georg Raming
Ludwig Stockmeier
Jochen Friedrich
Matthias Daniel
Alfred Miller
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11202001640SA publication Critical patent/SG11202001640SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
SG11202001640SA 2017-09-01 2018-08-28 Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal SG11202001640SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017215332.6A DE102017215332A1 (en) 2017-09-01 2017-09-01 A single crystal of <100> oriented silicon doped with n-type dopant and methods of producing such a single crystal
PCT/EP2018/073101 WO2019042979A1 (en) 2017-09-01 2018-08-28 Silicon single crystal with &lt;100&gt; orientation, which is doped with dopant of n-type, and method for producing such a single crystal

Publications (1)

Publication Number Publication Date
SG11202001640SA true SG11202001640SA (en) 2020-03-30

Family

ID=63407219

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001640SA SG11202001640SA (en) 2017-09-01 2018-08-28 Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal

Country Status (10)

Country Link
US (1) US11390962B2 (en)
EP (1) EP3676425B1 (en)
JP (1) JP6995980B2 (en)
KR (1) KR102381014B1 (en)
CN (1) CN111051578A (en)
DE (1) DE102017215332A1 (en)
FI (1) FI3676425T3 (en)
SG (1) SG11202001640SA (en)
TW (1) TWI668340B (en)
WO (1) WO2019042979A1 (en)

Family Cites Families (21)

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JPS59102896A (en) * 1982-11-30 1984-06-14 Toshiba Corp Method for controlling shape of single crystal
JPH0644369B2 (en) 1982-12-28 1994-06-08 オリンパス光学工業株式会社 Magnetic recording / reproducing device
JPH05319988A (en) * 1992-05-25 1993-12-03 Nippon Steel Corp Production of silicon single crystal
US5769941A (en) * 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material
JP3992800B2 (en) * 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Single crystal manufacturing apparatus and single crystal manufacturing method
JP3612974B2 (en) * 1997-12-26 2005-01-26 三菱住友シリコン株式会社 Crystal growth method
US6241818B1 (en) 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
JP4357068B2 (en) * 1999-05-11 2009-11-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Single crystal ingot manufacturing apparatus and method
DE10025870A1 (en) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Single crystal rod and method of manufacturing the same
JP3909675B2 (en) * 2001-04-20 2007-04-25 信越半導体株式会社 Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method using the same
EP1498517B1 (en) * 2002-04-24 2016-08-31 Shin-Etsu Handotai Co., Ltd. Method of manufacturing silicon single crystal
JP4089354B2 (en) * 2002-08-30 2008-05-28 株式会社Ｓｕｍｃｏ Epitaxial wafer and manufacturing method thereof
JP4760729B2 (en) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Silicon single crystal wafer for IGBT and manufacturing method of silicon single crystal wafer for IGBT
JP5463693B2 (en) * 2009-03-03 2014-04-09 信越半導体株式会社 Manufacturing method of silicon epitaxial wafer
DE102009024473B4 (en) * 2009-06-10 2015-11-26 Siltronic Ag A method for pulling a single crystal of silicon and then produced single crystal
KR101275382B1 (en) * 2010-03-02 2013-06-14 주식회사 엘지실트론 Single Crystal Cooling Apparatus and Single Crystal Grower including the same
JP5831436B2 (en) 2012-12-11 2015-12-09 信越半導体株式会社 Method for producing silicon single crystal
CN103343385A (en) * 2013-06-28 2013-10-09 浙江长兴众成电子有限公司 Special-shape size czochralski silicon and growth method thereof
FR3028266B1 (en) * 2014-11-10 2016-12-23 Commissariat Energie Atomique PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION
JP6471492B2 (en) 2014-12-24 2019-02-20 株式会社Sumco Single crystal manufacturing method
WO2017069112A1 (en) * 2015-10-23 2017-04-27 株式会社トクヤマ Silicon single crystal ingot pull-up device and silicon single crystal ingot production method

Also Published As

Publication number Publication date
CN111051578A (en) 2020-04-21
JP6995980B2 (en) 2022-02-03
EP3676425A1 (en) 2020-07-08
EP3676425B1 (en) 2023-10-04
KR20200042516A (en) 2020-04-23
JP2020531401A (en) 2020-11-05
KR102381014B1 (en) 2022-04-01
US20200270764A1 (en) 2020-08-27
WO2019042979A1 (en) 2019-03-07
TWI668340B (en) 2019-08-11
US11390962B2 (en) 2022-07-19
DE102017215332A1 (en) 2019-03-07
TW201912850A (en) 2019-04-01
FI3676425T3 (en) 2023-12-14

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