SG11201908970TA - Apparatus and methods for bias switching of power amplifiers - Google Patents

Apparatus and methods for bias switching of power amplifiers

Info

Publication number
SG11201908970TA
SG11201908970TA SG11201908970TA SG11201908970TA SG 11201908970T A SG11201908970T A SG 11201908970TA SG 11201908970T A SG11201908970T A SG 11201908970TA SG 11201908970T A SG11201908970T A SG 11201908970TA
Authority
SG
Singapore
Prior art keywords
international
power
bias
woburn
power management
Prior art date
Application number
Inventor
Netsanet Gebeyehu
Srivatsan JAYARAMAN
Edward Anthony
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG11201908970TA publication Critical patent/SG11201908970TA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/105—A non-specified detector of the power of a signal being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/3827—Portable transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/045—Circuits with power amplifiers with means for improving efficiency

Abstract

BIASCONTROL , r BIAS NETWORKS POWER MANAGEMENT (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 11 October 2018 (11.10.2018) WIPO I PCT omit IIl °nolo munom oimIE (10) International Publication Number WO 2018/187245 Al 100 RF_OUT J (51) International Patent Classification: H03F 1/02 (2006.01) H03F 3/24 (2006.01) (21) International Application Number: PCT/US2018/025757 (22) International Filing Date: 02 April 2018 (02.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/481,368 04 April 2017 (04.04.2017) US (71) Applicant: SKYWORKS SOLUTIONS, INC. [US/US]; 20 Sylvan Road, Woburn, MA 01801 (US). (72) Inventors: GEBEYEHU, Netsanet; 20 Sylvan Road, Woburn, MA 01801 (US). JAYARAMAN, Srivatsan; 20 Sylvan Road, Woburn, MA 01801 (US). ANTHONY, Ed- ward, James; 20 Sylvan Road, Woburn, MA 01801 (US). (74) Agent: JUANG, Agnes; Knobbe Martens, 2040 Main Street, 14th Floor, Irvine, CA 92614 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, = (54) Title: APPARATUS AND METHODS FOR BIAS SWITCHING OF POWER AMPLIFIERS 751 76J 83 RF_IN INPUT INTERSTAGE MATCH — 84- 1 MATCH (57) : Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power cc N that controls a voltage level of a supply voltage of the power amplifier, and a bias control circuit that biases the power amplifier. amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, a power management circuit The power management circuit is operable in multiple supply control modes, such as an average power tracking (APT) mode and an 00 envelope tracking (ET) mode. The bias control circuit is configured to switch a bias of the power amplifier based on the supply control mode of the power management circuit. O C [Continued on next page] WO 2018/187245 Al MIDEDIMOMOIDEIREEMOMOHOMOIDEIROMEEN MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(H)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3))
SG11201908970T 2017-04-04 2018-04-02 Apparatus and methods for bias switching of power amplifiers SG11201908970TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762481368P 2017-04-04 2017-04-04
PCT/US2018/025757 WO2018187245A1 (en) 2017-04-04 2018-04-02 Apparatus and methods for bias switching of power amplifiers

Publications (1)

Publication Number Publication Date
SG11201908970TA true SG11201908970TA (en) 2019-10-30

Family

ID=63712612

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908970T SG11201908970TA (en) 2017-04-04 2018-04-02 Apparatus and methods for bias switching of power amplifiers

Country Status (9)

Country Link
US (4) US10666200B2 (en)
JP (2) JP7221212B2 (en)
KR (1) KR102389657B1 (en)
CN (1) CN110622412B (en)
DE (1) DE112018001855T5 (en)
GB (2) GB2605891B (en)
SG (1) SG11201908970TA (en)
TW (2) TW202214025A (en)
WO (1) WO2018187245A1 (en)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10153919B2 (en) 2017-03-31 2018-12-11 Intel IP Corporation RF transmit architecture methods
US10826447B2 (en) * 2017-03-31 2020-11-03 Intel IP Corporation Adaptive envelope tracking threshold
US10666200B2 (en) 2017-04-04 2020-05-26 Skyworks Solutions, Inc. Apparatus and methods for bias switching of power amplifiers
KR102049350B1 (en) * 2018-02-09 2019-11-27 성균관대학교산학협력단 Dual-output and dual-mode supply modulator, two-stage power amplifier using the same, and supply modulation method therof
KR102614443B1 (en) * 2018-03-21 2023-12-14 인텔 코포레이션 Transmitter and how to operate it
US11038470B2 (en) * 2018-03-30 2021-06-15 Intel IP Corporation Autonomous power reduction
WO2019244815A1 (en) * 2018-06-20 2019-12-26 株式会社村田製作所 High-frequency module and communication device
JP2020022163A (en) 2018-08-01 2020-02-06 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. Variable power amplifier bias impedance
US11211911B2 (en) * 2019-01-15 2021-12-28 Skyworks Solutions, Inc. Capacitive-coupled bandpass filter
US11658410B2 (en) 2019-03-12 2023-05-23 Epirus, Inc. Apparatus and method for synchronizing power circuits with coherent RF signals to form a steered composite RF signal
US11616295B2 (en) 2019-03-12 2023-03-28 Epirus, Inc. Systems and methods for adaptive generation of high power electromagnetic radiation and their applications
KR20200114745A (en) * 2019-03-29 2020-10-07 삼성전자주식회사 Voltage protection circuit to prevent power amplifier burnout and electonic device including it
US10992265B2 (en) * 2019-03-29 2021-04-27 Eta Wireless, Inc. Multi-stage pulse shaping network
CN110166004B (en) * 2019-04-18 2023-12-22 翱捷科技股份有限公司 Method and device for reducing power consumption of power amplifier
US11632089B2 (en) * 2019-06-20 2023-04-18 Mediatek Inc. Notch circuit and power amplifier module
KR102584100B1 (en) * 2019-07-09 2023-10-04 가부시키가이샤 무라타 세이사쿠쇼 High frequency modules and communication devices
TWI710223B (en) * 2019-07-15 2020-11-11 立積電子股份有限公司 Radio frequency signal transmission circuit
JP2021069089A (en) * 2019-10-28 2021-04-30 株式会社村田製作所 Power amplifier module and power amplifying method
JP2021082914A (en) * 2019-11-18 2021-05-27 株式会社村田製作所 High frequency module and communication device
US11418225B2 (en) * 2019-12-03 2022-08-16 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
CN115088191A (en) * 2020-02-14 2022-09-20 株式会社村田制作所 Power amplifying circuit, high frequency circuit and communication device
US11677356B2 (en) 2020-02-19 2023-06-13 Samsung Electronics Co., Ltd. Supply modulator and wireless communication apparatus including the same
US11558016B2 (en) 2020-03-12 2023-01-17 Qorvo Us, Inc. Fast-switching average power tracking power management integrated circuit
JP2021158622A (en) * 2020-03-30 2021-10-07 株式会社村田製作所 Power amplification circuit
US11736076B2 (en) 2020-06-10 2023-08-22 Qorvo Us, Inc. Average power tracking power management circuit
US11579646B2 (en) 2020-06-11 2023-02-14 Qorvo Us, Inc. Power management circuit for fast average power tracking voltage switching
US20210399700A1 (en) 2020-06-22 2021-12-23 Epirus, Inc. Systems and methods for modular power amplifiers
US11894767B2 (en) 2020-07-15 2024-02-06 Qorvo Us, Inc. Power management circuit operable to reduce rush current
US11539290B2 (en) * 2020-07-30 2022-12-27 Qorvo Us, Inc. Power management circuit operable with low battery
US11619957B2 (en) 2020-08-18 2023-04-04 Qorvo Us, Inc. Power management circuit operable to reduce energy loss
US11482970B2 (en) 2020-09-03 2022-10-25 Qorvo Us, Inc. Power management circuit operable to adjust voltage within a defined interval(s)
US11755047B2 (en) 2020-10-21 2023-09-12 Analog Devices International Unlimited Company Apparatus and methods for compensating supply sensitive circuits for supply voltage variation
KR20220072279A (en) * 2020-11-25 2022-06-02 삼성전자주식회사 Electronic device for performing communication using a plurality of frequency bands and method for the same
US11699950B2 (en) 2020-12-17 2023-07-11 Qorvo Us, Inc. Fast-switching power management circuit operable to prolong battery life
TWI757068B (en) * 2021-01-25 2022-03-01 瑞昱半導體股份有限公司 Power amplifier and power amplifying method
KR20230104249A (en) * 2021-01-28 2023-07-07 가부시키가이샤 무라타 세이사쿠쇼 Tracker module, power amplification module, high frequency module, and communication device
CN112687675B (en) * 2021-03-16 2021-06-29 荣耀终端有限公司 Die, module, wafer and manufacturing method of die
JP2022159093A (en) * 2021-03-31 2022-10-17 スカイワークス ソリューションズ，インコーポレイテッド Power amplifier with reduced gain variation
CN113489508B (en) * 2021-07-30 2022-11-29 维沃移动通信有限公司 Power supply control method, power supply control device, electronic device, and readable storage medium
US11906992B2 (en) 2021-09-16 2024-02-20 Qorvo Us, Inc. Distributed power management circuit
KR20240044493A (en) * 2021-09-29 2024-04-04 가부시키가이샤 무라타 세이사쿠쇼 Tracker modules and communication devices
WO2023054374A1 (en) * 2021-09-29 2023-04-06 株式会社村田製作所 Tracker module and communication device
WO2023054382A1 (en) * 2021-09-29 2023-04-06 株式会社村田製作所 Tracker module
US20230094883A1 (en) * 2021-09-29 2023-03-30 Qorvo Us, Inc. Power amplifier with protection loop
WO2023054376A1 (en) * 2021-09-29 2023-04-06 株式会社村田製作所 Tracker module
WO2023054106A1 (en) * 2021-09-30 2023-04-06 株式会社村田製作所 High-frequency module
WO2023063074A1 (en) * 2021-10-11 2023-04-20 株式会社村田製作所 Tracker module
WO2023091083A2 (en) * 2021-11-16 2023-05-25 Agency For Science, Technology And Research Output power control for a beamforming transmission system
WO2023136165A1 (en) * 2022-01-11 2023-07-20 株式会社村田製作所 Tracker module
US11855672B2 (en) * 2022-02-16 2023-12-26 Motorola Solutions, Inc. Dynamic RFPA operating modes for a converged communication device

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3022347B2 (en) 1996-10-18 2000-03-21 八木アンテナ株式会社 Distortion compensation circuit
US6072995A (en) 1997-02-26 2000-06-06 Ericsson Inc. Flexible current control in power amplifiers
US6327462B1 (en) * 1998-12-29 2001-12-04 Conexant Systems, Inc. System and method for dynamically varying operational parameters of an amplifier
JP3471648B2 (en) 1999-02-26 2003-12-02 富士通カンタムデバイス株式会社 Power amplifier circuit and its bias circuit
JP3607855B2 (en) 1999-07-19 2005-01-05 シャープ株式会社 Power amplifier
JP3808064B2 (en) * 1999-07-19 2006-08-09 シャープ株式会社 Communication device provided with power amplifier
US6529716B1 (en) 2000-01-11 2003-03-04 Skyworks Solutions, Inc. RF transmitter with extended efficient power control range
JP2001223539A (en) * 2000-02-08 2001-08-17 Nec Corp Linear power amplifier based on active feedforward type predistortion
US6784748B1 (en) 2000-02-24 2004-08-31 Skyworks Solutions, Inc. Power amplifying system with supply and bias enhancements
JP3510194B2 (en) 2000-09-07 2004-03-22 シャープ株式会社 Power amplifier and wireless communication device
WO2002045253A1 (en) * 2000-12-01 2002-06-06 Mitsubishi Denki Kabushiki Kaisha High-frequency amplifier
US7333778B2 (en) 2001-03-21 2008-02-19 Ericsson Inc. System and method for current-mode amplitude modulation
JP3877558B2 (en) * 2001-09-11 2007-02-07 株式会社ルネサステクノロジ High frequency power amplifier, high frequency power amplifier module, and mobile phone
KR100651159B1 (en) 2002-06-01 2006-11-29 김송강 High power amplifier
US6714081B1 (en) 2002-09-11 2004-03-30 Motorola, Inc. Active current bias network for compensating hot-carrier injection induced bias drift
US20040224649A1 (en) 2003-02-05 2004-11-11 Khosro Shamsaifar Electronically tunable power amplifier tuner
JP2005143079A (en) 2003-10-14 2005-06-02 Matsushita Electric Ind Co Ltd High-frequency power amplifier
US7053705B2 (en) 2003-12-22 2006-05-30 Tymphany Corporation Mixed-mode (current-voltage) audio amplifier
US7071775B2 (en) 2004-06-21 2006-07-04 Motorola, Inc. Method and apparatus for an enhanced efficiency power amplifier
JP2006129443A (en) 2004-09-30 2006-05-18 Renesas Technology Corp High frequency power amplifier
US7706467B2 (en) 2004-12-17 2010-04-27 Andrew Llc Transmitter with an envelope tracking power amplifier utilizing digital predistortion of the signal envelope
JP2007019784A (en) 2005-07-07 2007-01-25 Renesas Technology Corp High frequency power amplifier and operation voltage control circuit
JP2007036973A (en) * 2005-07-29 2007-02-08 Sharp Corp Power amplifier and communication apparatus
JP2007258949A (en) * 2006-03-22 2007-10-04 Matsushita Electric Ind Co Ltd High frequency power amplifier
US7869775B2 (en) 2006-10-30 2011-01-11 Skyworks Solutions, Inc. Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
US7994861B2 (en) 2006-10-31 2011-08-09 Skyworks Solutions, Inc. System and method for pre-charging a current mirror
US8093952B2 (en) 2006-12-29 2012-01-10 Broadcom Corporation Method and system for precise current matching in deep sub-micron technology
WO2008091325A1 (en) 2007-01-25 2008-07-31 Skyworks Solutions, Inc. Multimode amplifier for operation in linear and saturated modes
US7787834B2 (en) 2007-02-08 2010-08-31 Broadcom Corporation Voice, data and RF integrated circuit with off-chip power amplifier and methods for use therewith
JP2009100337A (en) 2007-10-18 2009-05-07 Renesas Technology Corp Semiconductor integrated circuit with built-in variable gain amplifier
TWI344263B (en) 2008-01-25 2011-06-21 Univ Nat Taiwan Low-noise amplifier
US7612613B2 (en) 2008-02-05 2009-11-03 Freescale Semiconductor, Inc. Self regulating biasing circuit
JP2009212870A (en) * 2008-03-05 2009-09-17 Renesas Technology Corp Rf power amplifier
JP2010011449A (en) * 2008-05-28 2010-01-14 Panasonic Corp Transmission circuit for bias control of power amplifier
GB2530424B (en) 2008-11-18 2016-05-04 Nujira Ltd Power Supply Arrangement For Multi-Stage Amplifier
KR101004851B1 (en) 2008-12-23 2010-12-28 삼성전기주식회사 System of power amplifier with power control function
US8106712B2 (en) * 2008-12-24 2012-01-31 Georgia Tech Research Corporation Systems and methods for self-mixing adaptive bias circuit for power amplifier
JP5299093B2 (en) 2009-05-29 2013-09-25 株式会社村田製作所 Bias circuit, high power amplifier and portable information terminal
US8072272B2 (en) 2009-08-19 2011-12-06 Qualcomm, Incorporated Digital tunable inter-stage matching circuit
US8026767B2 (en) 2009-08-21 2011-09-27 Richwave Technology Corp. Adaptive bias circuit and system thereof
JP2011055241A (en) * 2009-09-01 2011-03-17 Panasonic Corp High-frequency power amplifier
US8098093B1 (en) 2010-01-15 2012-01-17 National Semiconductor Corporation Efficient envelope tracking power supply for radio frequency or other power amplifiers
US8183917B2 (en) 2010-06-04 2012-05-22 Quantance, Inc. RF power amplifier circuit with mismatch tolerance
US8416023B2 (en) 2010-06-08 2013-04-09 Nxp B.V. System and method for compensating for changes in an output impedance of a power amplifier
US8688061B2 (en) * 2010-08-09 2014-04-01 Skyworks Solutions, Inc. System and method for biasing a power amplifier
US8797103B2 (en) 2010-12-07 2014-08-05 Skyworks Solutions, Inc. Apparatus and methods for capacitive load reduction
US8598950B2 (en) 2010-12-14 2013-12-03 Skyworks Solutions, Inc. Apparatus and methods for capacitive load reduction
WO2012125657A2 (en) 2011-03-15 2012-09-20 Skyworks Solutions, Inc. Apparatus and methods for capacitive load reduction
US8718188B2 (en) 2011-04-25 2014-05-06 Skyworks Solutions, Inc. Apparatus and methods for envelope tracking
KR101767298B1 (en) 2011-05-13 2017-08-10 스카이워크스 솔루션즈, 인코포레이티드 Apparatus and methods for biasing power amplifiers
US8761698B2 (en) 2011-07-27 2014-06-24 Intel Mobile Communications GmbH Transmit circuit, method for adjusting a bias of a power amplifier and method for adapting the provision of a bias information
TWI462470B (en) 2011-10-06 2014-11-21 Univ Nat Taiwan Method for designing wideband low- noise amplifier
KR101767718B1 (en) 2011-11-04 2017-08-11 스카이워크스 솔루션즈, 인코포레이티드 Apparatus and methods for power amplifiers
KR101287657B1 (en) 2011-12-05 2013-07-24 삼성전기주식회사 Power amplifier
JP5282831B2 (en) * 2012-01-30 2013-09-04 富士通株式会社 Wireless communication apparatus and power amplifier control method
WO2013188712A1 (en) * 2012-06-14 2013-12-19 Skyworks Solutions, Inc. Power amplifier modules including related systems, devices, and methods
US20140091440A1 (en) 2012-09-29 2014-04-03 Vijay K. Nair System in package with embedded rf die in coreless substrate
US9219877B2 (en) 2013-03-07 2015-12-22 Holland Electronics, Llc Impedance compensation circuit
US9263991B2 (en) 2013-03-13 2016-02-16 Rf Micro Devices, Inc. Power management/power amplifier operation under dynamic battery drops
US9246454B2 (en) * 2013-03-14 2016-01-26 Google Technology Holdings, LLC Low power consumption adaptive power amplifier
KR101738730B1 (en) * 2013-04-23 2017-05-22 스카이워크스 솔루션즈, 인코포레이티드 Apparatus and methods for envelope shaping in power amplifier systems
US9337787B2 (en) 2013-06-19 2016-05-10 Rf Micro Devices, Inc. Power amplifier with improved low bias mode linearity
US9362870B2 (en) 2013-08-01 2016-06-07 Skyworks Solutions, Inc. Apparatus and methods for biasing power amplifiers
CN104467745B (en) 2013-09-19 2018-07-20 天工方案公司 Dynamic error vector magnitude duty cycle correction
US9455669B2 (en) * 2013-10-11 2016-09-27 Skyworks Solutions, Inc. Apparatus and methods for phase compensation in power amplifiers
US9660600B2 (en) 2013-12-23 2017-05-23 Skyworks Solutions, Inc. Dynamic error vector magnitude compensation
US9698740B2 (en) 2014-07-14 2017-07-04 Skyworks Solutions, Inc. Mode linearization switch circuit
WO2016019334A1 (en) * 2014-08-01 2016-02-04 CoolStar Technology, Inc. Adaptive envelope tracking for biasing radio frequency power amplifiers
US9602056B2 (en) * 2014-09-19 2017-03-21 Skyworks Solutions, Inc. Amplifier with base current reuse
US9991856B2 (en) * 2014-09-25 2018-06-05 Skyworks Solutions, Inc. Variable load power amplifier supporting dual-mode envelope tracking and average power tracking performance
CN105471396B (en) * 2014-09-30 2018-06-01 天工方案公司 The compression control adjusted by power amplifier voltage
US9698736B2 (en) * 2014-12-30 2017-07-04 Skyworks Solutions, Inc. Compression control through power amplifier load adjustment
JP2016192590A (en) * 2015-03-30 2016-11-10 株式会社村田製作所 Power amplification module
JP2016208305A (en) * 2015-04-23 2016-12-08 株式会社村田製作所 Power Amplifier Module
JP2016213557A (en) * 2015-04-30 2016-12-15 株式会社村田製作所 Power Amplifier Module
JP2016213547A (en) * 2015-04-30 2016-12-15 株式会社村田製作所 Power amplification module
JP2017028342A (en) * 2015-07-15 2017-02-02 株式会社村田製作所 Power amplification module
US9817416B2 (en) * 2015-08-17 2017-11-14 Skyworks Solutions, Inc. Apparatus and methods for programmable low dropout regulators for radio frequency electronics
US9819310B2 (en) 2015-09-29 2017-11-14 Skyworks Solutions, Inc. Apparatus and methods for multi-mode power amplifiers
JP2017092526A (en) * 2015-11-02 2017-05-25 株式会社村田製作所 Power amplifier circuit
US10666200B2 (en) 2017-04-04 2020-05-26 Skyworks Solutions, Inc. Apparatus and methods for bias switching of power amplifiers

Also Published As

Publication number Publication date
GB2605891B (en) 2023-02-08
GB2575747B (en) 2023-01-18
JP2020516194A (en) 2020-05-28
CN110622412A (en) 2019-12-27
JP2023052828A (en) 2023-04-12
TW202214025A (en) 2022-04-01
TW201840228A (en) 2018-11-01
KR20190127966A (en) 2019-11-13
US20220311386A1 (en) 2022-09-29
JP7221212B2 (en) 2023-02-13
TWI750361B (en) 2021-12-21
US20180316311A1 (en) 2018-11-01
KR102389657B1 (en) 2022-04-22
US10958218B2 (en) 2021-03-23
US10666200B2 (en) 2020-05-26
CN110622412B (en) 2024-01-23
GB2605891A (en) 2022-10-19
US20210184632A1 (en) 2021-06-17
DE112018001855T5 (en) 2019-12-24
US11394347B2 (en) 2022-07-19
GB202207530D0 (en) 2022-07-06
US20200336108A1 (en) 2020-10-22
GB201914901D0 (en) 2019-11-27
GB2575747A (en) 2020-01-22
WO2018187245A1 (en) 2018-10-11
US11728773B2 (en) 2023-08-15

Similar Documents

Publication Publication Date Title
SG11201908970TA (en) Apparatus and methods for bias switching of power amplifiers
SG11201901799UA (en) Multi-input amplifier with degeneration switching block and low loss bypass function
SG11201807389XA (en) System and method for beam management
SG11201809123UA (en) Informing base station regarding user equipment's reception of beam change instruction
SG11201807369UA (en) System and method for beam adjustment request
SG11201907063QA (en) Techniques and apparatuses for control channel monitoring using a wakeup signal
SG11201908391XA (en) Methods for modulating an immune response
SG11201808799SA (en) Amine-substituted aryl or heteroaryl compounds as ehmt1 and ehmt2 inhibitors
SG11201910129SA (en) Redundant controls for negative pressure wound therapy systems
SG11201809610YA (en) Redundancy in a public safety distributed antenna system
SG11201908719QA (en) Biomarkers and car t cell therapies with enhanced efficacy
SG11201807421TA (en) The use of glucocorticoid receptor modulators to potentiate checkpoint inhibitors
SG11201803983UA (en) Transformable tagging compositions, methods, and processes incorporating same
SG11201808990QA (en) Compositions for topical application of compounds
SG11201805792PA (en) Chimeric proteins and methods of regulating gene expression
SG11201906794TA (en) Systems and methods for issuing and tracking digital tokens within distributed network nodes
SG11201808076UA (en) Facilitating vehicle driving and self-driving
SG11201808907PA (en) Inhibitors of activin receptor-like kinase
SG11201903882VA (en) Il-2 variants for the treatment of autoimmune diseases
SG11201907383QA (en) Systems and methods for vehicle sharing service
SG11201902525VA (en) Techniques for adjusting transmit power in wireless communications
SG11201805447WA (en) Broadband satellite communication system using optical feeder links
SG11201908293QA (en) Selective application of reprojection processing on layer sub-regions for optimizing late stage reprojection power
SG11201809688RA (en) Use of topical formulations of cannabinoids in the treatment of epidermolysis bullosa and related connective tissue disorders
SG11201810525XA (en) Anti-gitr antibodies and uses thereof