SG11201907680VA - Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor - Google Patents

Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor

Info

Publication number
SG11201907680VA
SG11201907680VA SG11201907680VA SG11201907680VA SG11201907680VA SG 11201907680V A SG11201907680V A SG 11201907680VA SG 11201907680V A SG11201907680V A SG 11201907680VA SG 11201907680V A SG11201907680V A SG 11201907680VA SG 11201907680V A SG11201907680V A SG 11201907680VA
Authority
SG
Singapore
Prior art keywords
susceptor
semiconductor wafer
layer
positions
depositing
Prior art date
Application number
SG11201907680VA
Inventor
Reinhard Schauer
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201907680VA publication Critical patent/SG11201907680VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor 5 A susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and a method for depositing the layer by using the susceptor. The susceptor comprises a susceptor ring and a susceptor base, and the susceptor ring comprises a placement area for placing 10 the semiconductor wafer in the edge region of a back side of the semiconductor wafer and a step-shaped outer delimitation of the susceptor ring adjoining the placement area. The susceptor has four positions at which the structure of the susceptor differs from the structure of the susceptor at four further positions, the spacing from one of the four positions to the next of the four positions being 90° and the spacing from one 15 of the four positions to the next further position being 45°, and one of the four positions being a notch position, at which the structure of the susceptor differs from the structure of the susceptor at the three other positions of the four positions of the susceptor. 20 Drawing for the abstract: Fig. 3
SG11201907680VA 2017-04-20 2018-04-17 Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor SG11201907680VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017206671.7A DE102017206671A1 (en) 2017-04-20 2017-04-20 A susceptor for holding a wafer having an orientation notch during deposition of a film on a front side of the wafer and methods for depositing the film using the susceptor
PCT/EP2018/059726 WO2018192902A1 (en) 2017-04-20 2018-04-17 Susceptor for holding a semiconductor wafer having an orientation notch and separation process

Publications (1)

Publication Number Publication Date
SG11201907680VA true SG11201907680VA (en) 2019-09-27

Family

ID=62046889

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907680VA SG11201907680VA (en) 2017-04-20 2018-04-17 Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor

Country Status (9)

Country Link
US (1) US10991614B2 (en)
EP (1) EP3613072B1 (en)
JP (1) JP6812572B2 (en)
KR (1) KR102335880B1 (en)
CN (1) CN110546752B (en)
DE (1) DE102017206671A1 (en)
SG (1) SG11201907680VA (en)
TW (1) TWI677601B (en)
WO (1) WO2018192902A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111295737B (en) * 2017-08-31 2023-08-11 胜高股份有限公司 Susceptor, epitaxial growth device, method for producing epitaxial silicon wafer, and epitaxial silicon wafer
DE102019207772A1 (en) * 2019-05-28 2020-12-03 Siltronic Ag Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method

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US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
JP2001525997A (en) * 1997-05-20 2001-12-11 東京エレクトロン株式会社 Processing equipment
JPH11106293A (en) * 1997-10-03 1999-04-20 Super Silicon Kenkyusho:Kk Production of epitaxial wafer and apparatus therefor
JP3521819B2 (en) * 1999-11-15 2004-04-26 株式会社デンソー Semiconductor wafer surface treatment equipment
JP4203206B2 (en) * 2000-03-24 2008-12-24 株式会社日立国際電気 Substrate processing equipment
JP2006186105A (en) * 2004-12-27 2006-07-13 Steady Design Ltd Epitaxial growth device and susceptor used therefor
JP2007243167A (en) * 2006-02-09 2007-09-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Susceptor and apparatus for manufacturing epitaxial wafer
DE112007000345T8 (en) * 2006-02-09 2009-07-16 Sumco Techxiv Corp., Omura Susceptor and device for producing an epitaxial wafer
US8021484B2 (en) 2006-03-30 2011-09-20 Sumco Techxiv Corporation Method of manufacturing epitaxial silicon wafer and apparatus therefor
JP4868522B2 (en) * 2006-03-30 2012-02-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Epitaxial wafer manufacturing method and manufacturing apparatus
DE102006055038B4 (en) * 2006-11-22 2012-12-27 Siltronic Ag An epitaxated semiconductor wafer and apparatus and method for producing an epitaxied semiconductor wafer
JP5444607B2 (en) * 2007-10-31 2014-03-19 株式会社Ｓｕｍｃｏ Epitaxial film forming apparatus susceptor, epitaxial film forming apparatus, and epitaxial wafer manufacturing method
DE102008023054B4 (en) * 2008-05-09 2011-12-22 Siltronic Ag Process for producing an epitaxied semiconductor wafer
JP5092975B2 (en) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ Epitaxial wafer manufacturing method
JP5604907B2 (en) * 2010-02-25 2014-10-15 信越半導体株式会社 Semiconductor substrate support susceptor for vapor phase growth, epitaxial wafer manufacturing apparatus, and epitaxial wafer manufacturing method
US9490166B2 (en) * 2010-12-08 2016-11-08 Evatec Ag Apparatus and method for depositing a layer onto a substrate
KR101721166B1 (en) 2011-04-04 2017-03-29 주식회사 엘지실트론 Susceptor device for manufacturing semiconductor
DE102011007682A1 (en) 2011-04-19 2012-10-25 Siltronic Ag Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer
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DE102015220924B4 (en) * 2015-10-27 2018-09-27 Siltronic Ag Susceptor for holding a semiconductor wafer with orientation notch, method for depositing a layer on a semiconductor wafer and semiconductor wafer

Also Published As

Publication number Publication date
US10991614B2 (en) 2021-04-27
JP6812572B2 (en) 2021-01-13
KR20190139976A (en) 2019-12-18
JP2020518129A (en) 2020-06-18
EP3613072B1 (en) 2022-07-27
CN110546752B (en) 2023-07-14
EP3613072A1 (en) 2020-02-26
KR102335880B1 (en) 2021-12-03
WO2018192902A1 (en) 2018-10-25
TWI677601B (en) 2019-11-21
US20200365443A1 (en) 2020-11-19
TW201839187A (en) 2018-11-01
DE102017206671A1 (en) 2018-10-25
CN110546752A (en) 2019-12-06

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