SG11201900082RA - Electronic switching element - Google Patents

Electronic switching element

Info

Publication number
SG11201900082RA
SG11201900082RA SG11201900082RA SG11201900082RA SG11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA
Authority
SG
Singapore
Prior art keywords
switching element
electronic switching
bonded
electrode
molecular layer
Prior art date
Application number
SG11201900082RA
Inventor
Peer Kirsch
Andreas Ruhl
Marc Tornow
Achyut Bora
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11201900082RA publication Critical patent/SG11201900082RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
    • C09K19/60—Pleochroic dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/257—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings
    • C07C43/29—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00—Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/125—Saturated compounds having only one carboxyl group and containing ether groups, groups, groups, or groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808—Acyclic saturated acids which can have further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3839—Polyphosphonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3839—Polyphosphonic acids
    • C07F9/386—Polyphosphonic acids containing hydroxy substituents in the hydrocarbon radicals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/10—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings
    • C09K19/12—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings at least two benzene rings directly linked, e.g. biphenyls
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/30—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing saturated or unsaturated non-aromatic rings, e.g. cyclohexane rings
    • C09K19/3001—Cyclohexane rings
    • C09K19/3003—Compounds containing at least two rings in which the different rings are directly linked (covalent bond)
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/40—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals
    • C09K19/404—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals containing boron or phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/40—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals
    • C09K19/406—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals containing silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/10—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings
    • C09K19/12—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings at least two benzene rings directly linked, e.g. biphenyls
    • C09K2019/121—Compounds containing phenylene-1,4-diyl (-Ph-)
    • C09K2019/122—Ph-Ph
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/30—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing saturated or unsaturated non-aromatic rings, e.g. cyclohexane rings
    • C09K19/3001—Cyclohexane rings
    • C09K19/3003—Compounds containing at least two rings in which the different rings are directly linked (covalent bond)
    • C09K2019/301—Cy-Cy-Ph
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Electronic Switches (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Liquid Crystal Substances (AREA)

Abstract

ELECTRONIC SWITCHING ELEMENT The invention relates to an electronic switching element (1) which comprises, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of compounds of the formula I indicated in Claim 1, in which a mesogenic radical is bonded to the substrate via a spacer group (Sp) by means of an anchor group (G), is suitable for the production of components (1) as memristive device for digital information storage. ( FIG. 1 )
SG11201900082RA 2016-07-07 2017-07-04 Electronic switching element SG11201900082RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016008207 2016-07-07
PCT/EP2017/066534 WO2018007337A2 (en) 2016-07-07 2017-07-04 Electronic switching element

Publications (1)

Publication Number Publication Date
SG11201900082RA true SG11201900082RA (en) 2019-02-27

Family

ID=59337642

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900082RA SG11201900082RA (en) 2016-07-07 2017-07-04 Electronic switching element

Country Status (10)

Country Link
US (2) US11063227B2 (en)
EP (1) EP3481916B1 (en)
JP (1) JP7001669B2 (en)
KR (1) KR102375199B1 (en)
CN (1) CN109476999B (en)
DE (1) DE102017005884A1 (en)
IL (1) IL264088B (en)
SG (1) SG11201900082RA (en)
TW (1) TWI781944B (en)
WO (1) WO2018007337A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017005884A1 (en) * 2016-07-07 2018-01-11 Merck Patent Gmbh Electronic switching element
DE102018004733A1 (en) * 2018-06-14 2019-12-19 Merck Patent Gmbh Method for producing an electronic component containing a self-organized monolayer
US11823808B2 (en) 2018-09-19 2023-11-21 University Of Massachusetts Conductive composite materials fabricated with protein nanowires
JP7259368B2 (en) * 2019-02-01 2023-04-18 富士通株式会社 Method for manufacturing variable resistance element
WO2020225398A1 (en) 2019-05-09 2020-11-12 Merck Patent Gmbh Aromatic compounds
EP3966871B1 (en) 2019-05-09 2023-05-03 Merck Patent GmbH Diamondoid compounds
EP3813132A1 (en) * 2019-10-21 2021-04-28 Merck Patent GmbH Electronic switching device
EP3813135A1 (en) 2019-10-23 2021-04-28 Merck Patent GmbH Two bit memory device and method for operating the two-bit memory device and electronic component
WO2021083934A1 (en) 2019-10-29 2021-05-06 Merck Patent Gmbh Process for the production of a molecular layer and electronic component comprising same
US11631824B2 (en) * 2020-04-08 2023-04-18 University Of Massachusetts Memristor device comprising protein nanowires
US11982637B2 (en) 2020-04-22 2024-05-14 University Of Massachusetts Sensors comprising electrically-conductive protein nanowires
CN113782674B (en) * 2020-06-09 2024-02-27 北京元芯碳基集成电路研究院 Carbon nanotube radio frequency device, manufacturing method and integrated circuit system
CN111812908B (en) * 2020-07-23 2021-12-10 电子科技大学 Fabry-Perot cavity filter and method for dynamic color regulation
JP7438901B2 (en) * 2020-09-11 2024-02-27 キオクシア株式会社 Switching circuits and storage devices
JP2022118984A (en) * 2021-02-03 2022-08-16 キオクシア株式会社 memory device
EP4102571A1 (en) 2021-06-09 2022-12-14 Merck Patent GmbH Electronic element comprising a plurality of cells arranged in a three dimensional array of cells and method for producing such an electronic device
EP4174077A1 (en) 2021-10-27 2023-05-03 Merck Patent GmbH Electronic switching device
IL300665A (en) 2022-03-16 2023-10-01 Merck Patent Gmbh Electronic Switching Device
TW202347336A (en) 2022-03-16 2023-12-01 德商馬克專利公司 Electronic switching device
EP4349842A1 (en) 2022-10-04 2024-04-10 Merck Patent GmbH Hydroxyaminophosphinic acid derivatives

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0819103B2 (en) 1989-04-18 1996-02-28 財団法人相模中央化学研究所 2-halopyridine-6-sulfonic acid and its salt
US5217953A (en) 1990-11-30 1993-06-08 The United States Of America As Represented By The Secretary Of The Department Of Health & Human Services Vasoactive intestinal peptide antagonist
DE19927627B4 (en) 1998-06-30 2008-01-31 Merck Patent Gmbh Liquid crystalline medium
DE10013681A1 (en) * 1999-03-31 2000-11-16 Merck Patent Gmbh Fluorocyclohexene compounds, useful as components in liquid crystal mediums for use in liquid crystal and electrooptical display devices
JP5279975B2 (en) 2000-12-19 2013-09-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Negative DC anisotropic alkenyl compound and liquid crystalline medium
US7018685B2 (en) * 2001-01-11 2006-03-28 Merck Patent Gmbh Fluorinated aromatic compounds and the use of the same in liquid crystal mixtures
JP3931951B2 (en) * 2001-03-13 2007-06-20 信越化学工業株式会社 Polymer compound, resist material, and pattern forming method
JP4033678B2 (en) 2001-03-30 2008-01-16 独立行政法人科学技術振興機構 Liquid crystalline ion conductor and method for producing the same
DE10227850A1 (en) 2002-06-21 2004-01-15 Infineon Technologies Ag Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers
JP4506105B2 (en) 2003-06-10 2010-07-21 Ｄｉｃ株式会社 Liquid crystal alignment accelerator, liquid crystal composition and optical anisotropic body
DE102005003475A1 (en) * 2005-01-25 2006-08-03 Infineon Technologies Ag Novel connection of organic molecules to a silicon surface for the production of storage elements with organic components
JP2007177051A (en) 2005-12-27 2007-07-12 Toyota Central Res & Dev Lab Inc Organic-inorganic hybrid composition
US7279570B2 (en) * 2006-01-04 2007-10-09 Kent State University Nanoscale discotic liquid crystalline porphyrins
AU2007230991A1 (en) 2006-03-22 2007-10-04 Syndexa Pharmaceuticals Corporation Compounds and methods for treatment of disorders associated with ER stress
KR100836759B1 (en) 2006-10-04 2008-06-10 삼성전자주식회사 Organic Memory Device and Method of forming thereof
EP1958999B1 (en) 2007-02-13 2012-07-11 Merck Patent GmbH Liquid crystalline medium
US8158219B2 (en) 2008-09-22 2012-04-17 Jnc Corporation Liquid crystal composition and liquid crystal display device
US8477408B2 (en) * 2009-04-02 2013-07-02 Hewlett-Packard Development Company, L.P. Electronically reconfigurable planar crossbar array optical elements
JP5601494B2 (en) 2009-12-11 2014-10-08 Ｄｉｃ株式会社 Manufacturing method of liquid crystal material
DE102011015546A1 (en) * 2010-04-26 2012-01-26 Merck Patent Gmbh Polymerizable compounds and their use in liquid crystal media and liquid crystal displays
US8834742B2 (en) 2010-07-30 2014-09-16 California Institute Of Technology Polymer-doped vertically-aligned nematic liquid crystals
DE102011108708A1 (en) 2010-09-25 2012-03-29 Merck Patent Gmbh Liquid crystal displays and liquid crystal media with homeotropic alignment
KR101787445B1 (en) 2011-01-13 2017-10-18 제이에스알 가부시끼가이샤 Liquid crystal aligning agent, liquid crystal display device and its manufacturing method
JP5674520B2 (en) 2011-03-24 2015-02-25 株式会社東芝 Manufacturing method of organic molecular memory
JP5717490B2 (en) 2011-03-24 2015-05-13 株式会社東芝 Organic molecular memory
US9234136B2 (en) 2011-07-07 2016-01-12 Merck Patent Gmbh Liquid-crystalline medium
EP2607451B8 (en) 2011-12-20 2019-03-27 Merck Patent GmbH Liquid crystalline medium
US9653159B2 (en) * 2012-01-18 2017-05-16 Xerox Corporation Memory device based on conductance switching in polymer/electrolyte junctions
JP6502248B2 (en) * 2012-05-10 2019-04-17 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ Formulation comprising an ionic organic compound for use in an electron transport layer
CN102931349A (en) * 2012-11-10 2013-02-13 清华大学 Chip memristor and preparation method thereof
JP5472542B1 (en) * 2012-11-30 2014-04-16 Ｄｉｃ株式会社 Liquid crystal composition, liquid crystal display element and liquid crystal display
EP2931838B1 (en) * 2012-12-17 2017-08-16 Merck Patent GmbH Liquid-crystal displays and liquid-crystalline media having homeotropic alignment
US9117749B1 (en) * 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
CN103214353B (en) * 2013-04-10 2016-04-06 陕西师范大学 End alkene polyfluoro diaryl ethine liquid crystal compound and preparation method thereof
JP6313427B2 (en) 2013-04-16 2018-04-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ Devices containing liquid crystal media
US20150144198A1 (en) * 2013-11-26 2015-05-28 Michael D. IRWIN Solar cell materials
CN103740376B (en) 2013-12-30 2015-11-18 北京八亿时空液晶科技股份有限公司 Containing negative dielectric anisotropy liquid crystal composition and the application thereof of two fluorine bis cyclohexane compound
CN103773383B (en) 2013-12-30 2015-07-15 北京八亿时空液晶科技股份有限公司 Quick-response liquid crystal composition with negative dielectric anisotropy and application thereof
EP3327011B1 (en) 2014-03-17 2020-03-25 Merck Patent GmbH 4,6-difluor-dibenzofurane derivatives
US9305715B2 (en) * 2014-08-01 2016-04-05 Hunt Energy Enterprises Llc Method of formulating perovskite solar cell materials
US20170323929A1 (en) * 2014-10-31 2017-11-09 Nokia Technologies Oy Memory Apparatus and Method of Production Thereof
DE102015000120A1 (en) 2015-01-07 2016-07-07 Merck Patent Gmbh Electronic component
EP3247774B1 (en) * 2015-01-19 2018-12-12 Merck Patent GmbH Polymerisable compounds and the use thereof in liquid-crystal displays
JP2015111737A (en) * 2015-03-06 2015-06-18 株式会社東芝 Organic molecular memory
WO2017045740A1 (en) * 2015-09-15 2017-03-23 Merck Patent Gmbh Liquid-crystalline media having homeotropic alignment
KR102581443B1 (en) * 2015-12-21 2023-09-21 삼성디스플레이 주식회사 Liquid crystal composition, liquid crystal cell and liquid crystal display device
EP3214154B1 (en) * 2016-03-01 2019-06-26 Merck Patent GmbH Liquid-crystal media and light modulation element
DE102017005884A1 (en) * 2016-07-07 2018-01-11 Merck Patent Gmbh Electronic switching element
US9837439B1 (en) * 2016-08-12 2017-12-05 Globalfoundries Inc. Compensation of temperature effects in semiconductor device structures
DE102018004733A1 (en) * 2018-06-14 2019-12-19 Merck Patent Gmbh Method for producing an electronic component containing a self-organized monolayer

Also Published As

Publication number Publication date
US11063227B2 (en) 2021-07-13
TW201811718A (en) 2018-04-01
US20190312216A1 (en) 2019-10-10
US20210292651A1 (en) 2021-09-23
EP3481916A2 (en) 2019-05-15
DE102017005884A1 (en) 2018-01-11
JP2019525462A (en) 2019-09-05
JP7001669B2 (en) 2022-02-04
CN109476999B (en) 2022-11-25
IL264088B (en) 2022-09-01
WO2018007337A2 (en) 2018-01-11
US11522141B2 (en) 2022-12-06
TWI781944B (en) 2022-11-01
KR20190027839A (en) 2019-03-15
KR102375199B1 (en) 2022-03-16
IL264088A (en) 2019-01-31
CN109476999A (en) 2019-03-15
EP3481916B1 (en) 2021-11-03
WO2018007337A3 (en) 2018-03-01

Similar Documents

Publication Publication Date Title
SG11201900082RA (en) Electronic switching element
TW201613760A (en) Composite sheet for resin film formation
TW201612614A (en) Electrochromic devices
WO2010011407A3 (en) Methods of generating patterned soft substrates and uses thereof
TW201612143A (en) Composition for forming electrically conductive film, electrically conductive film, organic thin-film transistor, electronic paper, display device and wiring board
EP3978477A3 (en) Materials for organic electroluminescent devices
MY173532A (en) Semiconductor device and manufacturing method for the semiconductor device
WO2017052308A3 (en) Organic compound to be used in organic device, and method for manufacturing organic device by using same
GB2551069A (en) Polycrystalline diamond compacts and methods of manufacture
EP4317273A3 (en) Method for manufacturing polyimide-based film
WO2015077657A3 (en) Stat3 inhibitors and uses thereof
GB2541627A (en) Set on demand compositions
WO2013089444A3 (en) Novel diketopyrrolopyrrole polymer and organic electronic element using same
EP3637486A4 (en) Layered substrate having piezoelectric film, element having piezoelectric film and production method for layered substrate having piezoelectric film
WO2016195458A3 (en) Double spiro organic compound and organic electronic element comprising same
DK3776652T3 (en) MATRIX FILLER FOR SOLID DEEP TRACK CAPACITOR FOR HIGH PERFORMANCE APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC) APPLICATIONS
MX2018004841A (en) A process for producing a multilayer laminate.
EP3442043A4 (en) Organic thin film transistor element, composition for forming organic semiconductor film, method for producing organic semiconductor film, and organic semiconductor film
GB2539818A (en) Well head stabilizing device and method
WO2019096717A3 (en) Composition for organic electronic devices
BR112018016197A2 (en) compositions containing quaternary ammonium modified isocyanate-functional prepolymers and nanoargils
EP3456784A4 (en) Composition for organic electronic element encapsulant, and encapsulant formed by using same
WO2019059630A3 (en) Adhesive composition and polarization plate comprising adhesive layer formed using same
WO2019066304A3 (en) Compound for organic photoelectronic element, organic photoelectronic element, and display device
SG10201902318UA (en) Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor