CN113782674B - Carbon nanotube radio frequency device, manufacturing method and integrated circuit system - Google Patents
Carbon nanotube radio frequency device, manufacturing method and integrated circuit system Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Abstract
The present disclosure provides a carbon nanotube radio frequency device comprising: a channel layer formed of carbon nanotubes; and a substrate layer, the channel layer being disposed on the substrate layer, wherein a polar group is formed on a surface of the substrate layer in contact with the channel layer, and the carbon nanotube is disposed on the substrate layer at least through the polar group on the surface of the substrate layer. The disclosure also provides a method of manufacturing a carbon nanotube radio frequency device and an integrated circuit system.
Description
Technical Field
The present disclosure relates to the field of radio frequency electronic devices, and more particularly, to a carbon nanotube radio frequency device, a method of manufacturing the same, and an integrated circuit system.
Background
Along with the large-scale application of 5G, the development of the next-generation communication technology 6G is also carried out on a gong drum, and the requirements of the next-generation communication technology on radio frequency transistors and radio frequency devices are continuously improved, but the existing commercial radio frequency devices cannot completely meet the requirements of the next-generation communication technology, and the carbon nano tube has very advantages in the high-speed high-frequency field due to the excellent physical and electrical properties of the carbon nano tube, so that theoretical calculation and experiments show that the carbon nano tube device has the potential of working in a terahertz wave band.
The existing carbon nanotube radio frequency device takes quartz or high-resistance silicon as a substrate, and has the defects of high-frequency loss, small output power (total working current), large structure parasitic capacitance and large substrate parasitic resistance.
Most of the existing radio frequency devices are semiconductor devices with silicon-based or III-V semiconductor and other materials as channel layers, are limited by epitaxial growth conditions and CMOS (complementary metal oxide semiconductor) processes, and cannot be directly integrated with low-loss and high-heat-conductivity substrates such as BeO, alN, diamond and the like.
The traditional solution deposition process of the carbon nano tube can only occur on a silicon-based substrate, and the deposition process is copied to a substrate with low loss and high thermal conductivity such as BeO, alN, diamond and the like, so that the technical difficulty is high, and the main reason is that the interface of the substrate exists and the carbon nano tube has an unaffinity effect, so that the carbon tube is very easy to desorb in the solution deposition process.
Disclosure of Invention
In order to solve at least one of the above technical problems, the present disclosure provides a carbon nanotube radio frequency device, a manufacturing method and an integrated circuit system.
The carbon nanotube radio frequency device, the manufacturing method and the integrated circuit system are realized through the following technical scheme.
According to one aspect of the present disclosure, there is provided a carbon nanotube radio frequency device comprising: a channel layer formed of carbon nanotubes; and a substrate layer, the channel layer being disposed on the substrate layer, wherein a polar group is formed on a surface of the substrate layer that contacts the channel layer, and the carbon nanotube is disposed on the substrate layer at least through the polar group on the surface of the substrate layer.
According to at least one embodiment of the present disclosure, the carbon nanotube is a semiconductor type carbon nanotube.
According to at least one embodiment of the present disclosure, the polar group is formed by modifying the surface of the substrate layer.
According to at least one embodiment of the present disclosure, the carbon nanotube is purified by a polymer containing nitrogen atoms.
In accordance with at least one embodiment of the present disclosure, the material of the substrate layer is beryllium oxide, aluminum nitride, or diamond.
A carbon nanotube radio frequency device according to at least one embodiment of the present disclosure, further comprising: a gate comprising a plurality of gate fingers disposed over the channel layer; a drain comprising a plurality of drain fingers; and a source including a plurality of source fingers, wherein each gate finger is disposed between an adjacent one of the source fingers and one of the drain fingers and is spaced from the one of the source fingers and is spaced from the one of the drain fingers.
According to at least one embodiment of the present disclosure, the end of the drain and the end of the source are disposed on a first side of the carbon nanotube rf device, and the end of the gate is disposed on a second side of the carbon nanotube rf device.
The carbon nanotube radio frequency device according to at least one embodiment of the present disclosure, the first side and the second side are opposite sides.
In accordance with at least one embodiment of the present disclosure, each of the gate fingers is spaced from an adjacent source finger and an adjacent drain finger by an isolation medium.
According to at least one embodiment of the present disclosure, the isolation medium is an air bridge or a low K medium.
According to a carbon nanotube radio frequency device of at least one embodiment of the present disclosure, at least a portion of an end of the source electrode and at least a portion of an end of the drain electrode are disposed in different layers.
According to a carbon nanotube radio frequency device of at least one embodiment of the present disclosure, at least a portion of an end of the source is isolated from at least a portion of an end of the drain by an isolation medium.
According to at least one embodiment of the present disclosure, the isolation medium is an air bridge or a low K medium.
According to the carbon nanotube radio frequency device of at least one embodiment of the present disclosure, the extending direction of the carbon nanotubes in the channel layer is perpendicular to the extending directions of the gate finger, the source finger and the drain finger.
According to at least one embodiment of the carbon nanotube radio frequency device of the present disclosure, the gate is a metal material.
According to at least one embodiment of the carbon nanotube radio frequency device of the present disclosure, the source electrode and the drain electrode are N-type metal materials or P-type metal materials.
According to the carbon nanotube radio frequency device of at least one embodiment of the present disclosure, the channel layer is a carbon nanotube array film or a carbon nanotube network film.
According to still another aspect of the present disclosure, there is provided a method of manufacturing a carbon nanotube radio frequency device, including: forming a polar group on at least a surface of the substrate layer in contact with the channel layer; and disposing carbon nanotubes on the substrate layer at least through the polar groups on the surface of the substrate layer as the channel layer.
According to the method for manufacturing the carbon nanotube radio frequency device of at least one embodiment of the present disclosure, before the carbon nanotubes are disposed on the substrate layer at least through the polar groups on the surface of the substrate layer, the carbon nanotubes are purified using a polymer containing nitrogen atoms.
According to the method for manufacturing the carbon nanotube radio frequency device of at least one embodiment of the present disclosure, the polar group is formed by modifying the surface of the substrate layer.
According to a method of manufacturing a carbon nanotube radio frequency device of at least one embodiment of the present disclosure, an alcohol solvent is used to transfer the purified carbon nanotubes onto the substrate layer.
According to the manufacturing method of the carbon nano tube radio frequency device of at least one embodiment of the present disclosure, the material of the substrate layer is beryllium oxide, aluminum nitride or diamond.
The method for manufacturing a carbon nanotube radio frequency device according to at least one embodiment of the present disclosure further includes: forming a source electrode having a plurality of source fingers and a drain electrode having a plurality of drain fingers on a substrate layer, an end of the drain electrode and an end of the source electrode being formed on a first side of the radio frequency device; and forming a gate having a plurality of gate fingers on the substrate layer, and an end of the gate being formed on a second side of the radio frequency device, the second side being opposite the first side, each gate finger being formed between and spaced apart from an adjacent one of the source fingers and the drain finger.
According to a method of manufacturing a carbon nanotube radio frequency device of at least one embodiment of the present disclosure, at least a portion of an end of the source electrode and at least a portion of an end of the drain electrode are formed in different layers.
According to a method of manufacturing a carbon nanotube radio frequency device of at least one embodiment of the present disclosure, each gate finger is formed between one source finger and one drain finger that are adjacent.
According to the method for manufacturing the carbon nanotube radio frequency device of at least one embodiment of the present disclosure, the extending direction of the carbon nanotubes in the channel layer is perpendicular to the extending directions of the gate finger, the source finger and the drain finger.
According to a method of manufacturing a carbon nanotube radio frequency device of at least one embodiment of the present disclosure, at least a portion of an end portion of the source electrode and at least a portion of an end portion of the drain electrode formed at different layers are isolated using an isolation medium.
According to yet another aspect of the present disclosure, there is provided an integrated circuit system comprising a carbon nanotube radio frequency device of any one of the above.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the disclosure and together with the description serve to explain the principles of the disclosure.
Fig. 1 is a schematic structural diagram of a carbon nanotube radio frequency device according to one embodiment of the present disclosure.
Fig. 2 is a scanning electron microscope image of a carbon nanotube radio frequency device according to one embodiment of the present disclosure.
Fig. 3 is a cross-sectional view of the jumper portion pointed by arrow a in fig. 1.
Fig. 4 is a cross-sectional view of the channel of the carbon nanotube rf device as indicated by the arrow B in fig. 1.
Fig. 5 is a frequency response plot of a beryllium oxide substrate-based carbon nanotube radio frequency device in an open circuit state according to one embodiment of the present disclosure.
Fig. 6 is a frequency response plot of a high resistance silicon substrate/silicon dioxide substrate based carbon nanotube radio frequency device in an open circuit state according to one embodiment of the present disclosure.
Fig. 7 is a frequency variation plot of current gain and power gain for a carbon nanotube radio frequency device according to one embodiment of the present disclosure.
Fig. 8 is an S-parameter frequency performance curve of a carbon nanotube radio frequency device according to one embodiment of the present disclosure.
Description of the reference numerals
100. Carbon nanotube radio frequency device
101. Channel layer
102. Grid electrode
1021. Gate finger
103. Drain electrode
1031. Drain finger
104. Source electrode
1041. Source electrode finger
105. Isolation medium
106. Substrate and method for manufacturing the same
107. And a gate dielectric layer.
Detailed Description
The present disclosure is described in further detail below with reference to the drawings and the embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant content and not limiting of the present disclosure. It should be further noted that, for convenience of description, only a portion relevant to the present disclosure is shown in the drawings.
In addition, embodiments of the present disclosure and features of the embodiments may be combined with each other without conflict. The technical aspects of the present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Unless otherwise indicated, the exemplary implementations/embodiments shown are to be understood as providing exemplary features of various details of some ways in which the technical concepts of the present disclosure may be practiced. Thus, unless otherwise indicated, features of the various implementations/embodiments may be additionally combined, separated, interchanged, and/or rearranged without departing from the technical concepts of the present disclosure.
The use of cross-hatching and/or shading in the drawings is typically used to clarify the boundaries between adjacent components. As such, the presence or absence of cross-hatching or shading does not convey or represent any preference or requirement for a particular material, material property, dimension, proportion, commonality between illustrated components, and/or any other characteristic, attribute, property, etc. of a component, unless indicated. In addition, in the drawings, the size and relative sizes of elements may be exaggerated for clarity and/or descriptive purposes. While the exemplary embodiments may be variously implemented, the specific process sequences may be performed in a different order than that described. For example, two consecutively described processes may be performed substantially simultaneously or in reverse order from that described. Moreover, like reference numerals designate like parts.
When an element is referred to as being "on" or "over", "connected to" or "coupled to" another element, it can be directly on, connected or coupled to the other element or intervening elements may be present. However, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements present. For this reason, the term "connected" may refer to physical connections, electrical connections, and the like, with or without intermediate components.
For descriptive purposes, the present disclosure may use spatially relative terms such as "under … …," under … …, "" under … …, "" lower, "" above … …, "" upper, "" above … …, "" higher "and" side (e.g., in "sidewall") to describe one component's relationship to another (other) component as illustrated in the figures. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device in use, operation, and/or manufacture. For example, if the device in the figures is turned over, elements described as "under" or "beneath" other elements or features would then be oriented "over" the other elements or features. Thus, the exemplary term "below" … … can encompass both an orientation of "above" and "below". Furthermore, the device may be otherwise positioned (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, when the terms "comprises" and/or "comprising," and variations thereof, are used in the present specification, the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof is described, but the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof is not precluded. It is also noted that, as used herein, the terms "substantially," "about," and other similar terms are used as approximation terms and not as degree terms, and as such, are used to explain the inherent deviations of measured, calculated, and/or provided values that would be recognized by one of ordinary skill in the art.
In addition, the term "plurality" as used in this disclosure means two or more.
Fig. 1 schematically illustrates a structure of a carbon nanotube rf device according to an embodiment of the present disclosure. Fig. 2 is a scanning electron microscope image of a carbon nanotube radio frequency device according to one embodiment of the present disclosure.
The structure of the carbon nanotube rf device of the present disclosure is described in detail below with reference to fig. 1 and 2.
As shown in fig. 1, a carbon nanotube radio frequency device 100 includes: a channel layer 101, the channel layer 101 being formed of carbon nanotubes; and a substrate layer, the channel layer being disposed on the substrate layer, wherein a polar group is formed on a surface of the substrate layer in contact with the channel layer, and the carbon nanotube is disposed on the substrate layer at least through the polar group on the surface of the substrate layer.
The carbon nanotubes may be semiconductor type carbon nanotubes. The polar group may be formed by modifying the surface of the substrate layer. The carbon nanotubes may be purified from a polymer containing nitrogen atoms.
The substrate layer of the carbon nanotube radio frequency device 100 of the present disclosure uses a low-loss, high-thermal conductivity type substrate, for example, the material of the substrate layer is beryllium oxide (BeO), aluminum nitride (AlN), diamond, or the like.
For example, first, a semiconductor type purification is performed on a carbon nanotube by using a polymer molecule (e.g., PCO-BPy) containing a nitrogen atom, the obtained carbon nanotube is coated with the polymer molecule, and then, the carbon nanotube is transferred onto a substrate layer by using an alcohol solvent (e.g., ethylene glycol), and before the transfer, a polar group needs to be formed on the surface of the substrate layer, so that the substrate layer has high hydrophilicity, for example, the substrate layer is immersed by concentrated sulfuric acid.
The polar group may be a hydroxyl group, a carboxyl group, a sulfonic group, or the like.
The material of the substrate layer of the present disclosure may be beryllium oxide (BeO), which is described below as an example.
Because the beryllium oxide (BeO) substrate has the advantages over Si/SiO 2 The insulating property of the substrate can effectively reduce the parasitic capacitance resistance effect of the substrate, has good heat dissipation performance (the heat conductivity can be equivalent to that of SiC), can lighten the heat effect of a device or a circuit during working, is beneficial to the realization of thermal budget, is beneficial to the system-level integration (SoC) of analog signals, digital signals and radio frequency signals, can furthest utilize the advantages of the carbon nano tube as a quasi-dimensional material, and can directly realize the integration of an SOI structure on the substrate.
As shown in fig. 1, further, the carbon nanotube rf device 100 further includes: a gate 102, the gate 102 including a plurality of gate fingers 1021, the plurality of gate fingers 1021 being disposed over the channel layer 101; a drain electrode 103, the drain electrode 103 including a plurality of drain fingers 1031; and a source 104, the source 104 including a plurality of source fingers 1041, wherein each gate finger 1021 is disposed between an adjacent one of the source fingers 1041 and one of the drain fingers 1031, and is spaced apart from the one of the source fingers 1041 and the one of the drain fingers 1031.
Fig. 2 shows a structural layout of the gate electrode 102, the source electrode 104, and the drain electrode 103 of the present embodiment.
The gate, the source and the drain of the carbon nanotube radio frequency device 100 in this embodiment are all configured to have a multi-finger structure, which increases the total current of the radio frequency device, at least satisfies 50 ohm matching, and reduces the parasitic effect of the radio frequency device.
The carbon nanotube radio frequency device 100 of the present embodiment may further include a substrate layer (the substrate layer is not shown in fig. 1).
In fig. 1, the gate 102 is exemplarily shown with six fingers 1021, the drain 103 with three drain fingers 1031, and the source 104 with two source modules, four source fingers 1041 in total. However, it should be understood by those skilled in the art that the number of the gate fingers 1021, the source fingers 1041, and the drain fingers 1031 may be adjusted according to actual performance requirements of the rf device, and the like, which is not particularly limited in this disclosure.
As shown in fig. 1, each gate finger 1021 is disposed between an adjacent one of the source fingers 1041 and one of the drain fingers 1031, and is spaced from the one of the source fingers 1041 and the one of the drain fingers 1031, i.e., the adjacent source fingers 1041 and drain fingers 1031 are spaced apart by the one gate finger 1021.
Further, as shown in fig. 1, an end of the gate electrode 102 of the carbon nanotube rf device 100 is disposed on a second side (upper side in fig. 1) of the carbon nanotube rf device 100, and an end of the drain electrode 103 and an end of the source electrode 104 are disposed on a first side (lower side in fig. 1) of the carbon nanotube rf device 100, wherein the first side is opposite to the second side.
Each gate finger 1021 of the carbon nanotube rf device 100 is spaced apart from an adjacent source finger 1041 and an adjacent drain finger 1031 by an isolation medium.
The isolation medium used to space each gate finger 1021 from the adjacent source finger 1041 and the adjacent drain finger 1031 is an air bridge or a low K medium, which may be a low K medium having a K value less than 3.
The parasitic effects of the radio frequency device of the present disclosure are further reduced by spacing each gate finger 1021 from an adjacent source finger 1041 and an adjacent drain finger 1031 by an isolation medium.
At least a portion of the end of the source 104 and at least a portion of the end of the drain 103 of the carbon nanotube radio frequency device 100 are disposed in different layers.
At least a portion of the ends of the source 104 and at least a portion of the ends of the drain 103 of the carbon nanotube rf device 100 disposed at different layers are isolated by an isolation medium 105.
Wherein the isolation medium 105 for isolating at least a portion of the end of the source 104 and at least a portion of the end of the drain 103, which are disposed at different layers, is an air bridge or a low-K medium, which may be a low-K medium having a K value of less than 3.
By routing the end of the source 104 to the end side of the drain in a multi-fingered structure while employing a jumper layout and using a low K dielectric or even air as the isolation medium, parasitics are further reduced.
As shown in fig. 1, a portion of the end portion of the source 104 of the carbon nanotube rf device 100, where the two source fingers 1041 are connected, and a portion of the drain finger 1031 of the drain 103, where the two source fingers 1041 are connected, may be provided in different layers and isolated by the isolation medium 105.
According to a preferred embodiment of the present disclosure, as shown in fig. 1, the extending direction of the carbon nanotubes in the carbon nanotube layer of the carbon nanotube rf device 100 is perpendicular to the extending directions of the gate finger 1021, the source finger 1041, and the drain finger 1031.
In the above embodiments, the gate electrode 102 of the carbon nanotube rf device 100 is made of a metal material, for example, a material having good conductivity such as titanium or the like is used as the material of the gate electrode 102.
The present disclosure does not specifically limit the type of material of the gate electrode of the carbon nanotube radio frequency device.
In the above embodiments, the source 104 and the drain 103 of the carbon nanotube rf device 100 are N-type metal (e.g., pd) or P-type metal (e.g., sc).
The present disclosure does not specifically limit the type of material for the source and drain of the carbon nanotube rf device.
In the above embodiments, the carbon nanotube layer of the carbon nanotube radio frequency device 100 as the channel layer is a carbon nanotube array film or a carbon nanotube network film.
The carbon nanotube radio frequency device of the preferred embodiment starts from a ceramic substrate (such as BeO) with low dielectric loss and high thermal conductivity, and the carbon nanotube array film or the network film is obtained by solution deposition or CVD method growth, so that the parasitic effect of the substrate on the radio frequency device is reduced to the greatest extent.
Since the solution deposition of conventional carbon nanotubes can only occur on silicon-based substrates, the technical difficulty is great if the deposition technique of silicon-based substrates is replicated onto the substrate (e.g., beO) of the present disclosure. This is because the substrate of the present disclosure has an affinity with the carbon nanotubes, and the carbon nanotube solution is very easy to desorb the carbon nanotubes during the deposition process.
In order to solve the technical problem, polymer molecules containing N atoms are adopted to purify the semiconductor carbon nanotubes, and the obtained carbon nanotubes are coated by the polymer molecules. Then, an alcohol solvent may be used, and the carbon nanotube solution may be added to the alcohol solvent. The N atoms in the polymer and the H atoms in the alcohol solvent form hydrogen bonds, and the polymer-coated carbon nanotubes migrate into the interface of the carbon nanotube solution and the alcohol solvent under the action of the hydrogen bonds and are limited on the interface (two-dimensional double liquid level).
The substrate sheet is pulled out of the solution, and the polymer-coated carbon nanotubes confined at the interface are aligned to the substrate sheet along a one-dimensional contact line due to strong adsorption of the alcohol solvent and the substrate sheet.
According to one embodiment of the present disclosure, a method of manufacturing a carbon nanotube radio frequency device includes:
s11, forming a carbon nano tube layer on the substrate layer, wherein the carbon nano tube layer is used as a channel layer 101;
s12, forming a source 104 having a plurality of source fingers 1041 and a drain 103 having a plurality of drain fingers 1031 on the substrate layer, an end of the drain 103 and an end of the source 104 being formed on a first side of the radio frequency device;
s13, forming a gate 102 having a plurality of gate fingers 1021 on the substrate layer, and forming an end of the gate 102 on a second side of the radio frequency device, the second side being opposite to the first side, each gate finger 1021 being formed between an adjacent one of the source fingers 1041 and one of the drain fingers 1031 and being spaced apart from the one of the source fingers 1041 and the one of the drain fingers 1031.
In step S11, a double liquid phase self-assembly method is used to deposit carbon nanotubes on the substrate layer to form a carbon nanotube layer.
In step S12, at least a part of the end of the source electrode 104 and at least a part of the end of the drain electrode 103 are formed in different layers.
In step S13, each gate finger 1021 is formed between an adjacent one of the source fingers 1041 and one of the drain fingers 1031 using an overlay process or a self-alignment process.
In the method for manufacturing a carbon nanotube rf device according to the present embodiment, the extending direction of the carbon nanotubes in the carbon nanotube layer may be perpendicular to the extending directions of the gate finger 1021, the source finger 1041, and the drain finger 1031.
In the method for manufacturing a carbon nanotube radio frequency device according to the present embodiment, at least a portion of an end portion of the source electrode 104 and at least a portion of an end portion of the drain electrode 103, which are formed in different layers, may be isolated by using the isolation medium 105.
Fig. 3 is a cross-sectional view of the jumper portion pointed by arrow a in fig. 1.
Fig. 3 shows a substrate 106 with an isolation medium 105 disposed between a portion of the end of the source 104 and a portion of the end of the drain 103.
Fig. 4 is a cross-sectional view of the channel of the carbon nanotube rf device as indicated by the arrow B in fig. 1.
Fig. 4 shows a substrate 106 with a source 104 and a drain 103 disposed on a channel layer 101, a gate dielectric layer 107 disposed between a gate 102 and the channel layer 101, the gate dielectric layer 107 may be a high-K gate oxide dielectric layer, such as HfO 2 、Y 2 O 3 . The gate 102 may employ a T-type gate.
Fig. 4 also shows an isolation medium 105, which may be a low K isolation medium or air, isolating the source 104, drain 103, gate 102.
Fig. 5 is a frequency response curve (smith chart) of a beryllium oxide (BeO) substrate based carbon nanotube radio frequency device in an open circuit state of one embodiment of the disclosure.
In the elliptical region pointed by the left arrow in FIG. 5, S is the S in the S parameter 12 S and S 21 Is S in the S parameter in the elliptical region pointed by the right arrow in FIG. 5 11 S and S 22 Is a profile of (a).
As can be seen from fig. 5, the dispersion effect is small when the substrate is operated under high frequency conditions.
Fig. 6 is a frequency response curve (smith chart) of a high-resistance silicon substrate/silicon dioxide substrate based carbon nanotube radio frequency device in an open circuit state according to one embodiment of the present disclosure. Fig. 6 serves as a comparative example to fig. 5.
In the elliptical region pointed by the left arrow in FIG. 6 is S in the S parameter 12 S and S 21 Is S in the S parameter in the elliptical region pointed by the right arrow in FIG. 6 11 S and S 22 Is a profile of (a).
As can be seen from fig. 6, the dispersion effect is large when the substrate is operated under high frequency conditions.
Fig. 7 is a graph of current gain (h) of a carbon nanotube radio frequency device according to one embodiment of the present disclosure 21 ) And power gain (U) 1/2 ) Frequency variation curve of (2).
The cut-off frequency of the current gain after the radio frequency device is de-embedded can reach 184GHz, and the maximum resonance frequency of the power gain can reach 148GHz.
Fig. 8 is an S-parameter frequency performance curve of a carbon nanotube radio frequency device according to one embodiment of the present disclosure.
As can be seen from fig. 7 and 8, the carbon nanotube radio frequency device of the present disclosure achieves a significant improvement in high frequency performance.
According to yet another embodiment of the present disclosure, an integrated circuit system is provided that includes the carbon nanotube radio frequency device 100 of any of the embodiments described above.
In the description of the present specification, reference to the terms "one embodiment/manner," "some embodiments/manner," "example," "a particular example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment/manner or example is included in at least one embodiment/manner or example of the present disclosure. In this specification, the schematic representations of the above terms are not necessarily for the same embodiment/manner or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments/modes or examples. Furthermore, the various embodiments/modes or examples described in this specification and the features of the various embodiments/modes or examples can be combined and combined by persons skilled in the art without contradiction.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise.
It will be appreciated by those skilled in the art that the above-described embodiments are merely for clarity of illustration of the disclosure, and are not intended to limit the scope of the disclosure. Other variations or modifications will be apparent to persons skilled in the art from the foregoing disclosure, and such variations or modifications are intended to be within the scope of the present disclosure.
Claims (8)
1. A carbon nanotube radio frequency device, comprising:
a channel layer formed of carbon nanotubes;
a substrate layer, the channel layer being disposed on the substrate layer;
a gate comprising a plurality of gate fingers disposed over the channel layer;
a drain comprising a plurality of drain fingers; and
a source comprising a plurality of source fingers;
wherein each gate finger is disposed between an adjacent one of the source fingers and one of the drain fingers, and is spaced from the one of the source fingers and from the one of the drain fingers; each gate finger is spaced from an adjacent source finger and an adjacent drain finger by an isolation medium;
wherein the extending direction of the carbon nanotubes in the channel layer is perpendicular to the extending directions of the gate finger, the source finger and the drain finger;
at least a portion of an end of the source electrode and at least a portion of an end of the drain electrode are disposed in different layers; isolating at least a portion of an end of the source electrode from at least a portion of an end of the drain electrode formed at a different layer using an isolation medium;
and the carbon nano tube is arranged on the substrate layer at least through the polar groups on the surface of the substrate layer.
2. The carbon nanotube radio frequency device of claim 1, wherein the carbon nanotubes are semiconducting carbon nanotubes.
3. The carbon nanotube radio frequency device according to claim 1 or 2, wherein the polar group is formed by modifying a surface of the substrate layer.
4. The carbon nanotube radio frequency device according to claim 1 or 2, wherein the carbon nanotubes are purified carbon nanotubes by a polymer containing nitrogen atoms.
5. The carbon nanotube radio frequency device according to claim 1 or 2, wherein the material of the substrate layer is beryllium oxide, aluminum nitride, or diamond.
6. The carbon nanotube rf device of claim 1, wherein an end of the drain and an end of the source are disposed on a first side of the carbon nanotube rf device and an end of the gate is disposed on a second side of the carbon nanotube rf device.
7. The carbon nanotube radio frequency device of claim 6, wherein the first side and the second side are opposite sides.
8. The carbon nanotube radio frequency device of claim 1, wherein the isolation medium is an air bridge or a low K medium.
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