SG11201806891QA - Fept-c-based sputtering target - Google Patents

Fept-c-based sputtering target

Info

Publication number
SG11201806891QA
SG11201806891QA SG11201806891QA SG11201806891QA SG11201806891QA SG 11201806891Q A SG11201806891Q A SG 11201806891QA SG 11201806891Q A SG11201806891Q A SG 11201806891QA SG 11201806891Q A SG11201806891Q A SG 11201806891QA SG 11201806891Q A SG11201806891Q A SG 11201806891QA
Authority
SG
Singapore
Prior art keywords
fept
sputtering target
phase
based sputtering
enabled
Prior art date
Application number
SG11201806891QA
Inventor
Yasuyuki Goto
Takamichi Yamamoto
Masahiro Nishiura
Ryousuke Kushibiki
Original Assignee
Tanaka Precious Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=59789542&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201806891Q(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tanaka Precious Metal Ind filed Critical Tanaka Precious Metal Ind
Publication of SG11201806891QA publication Critical patent/SG11201806891QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
  • Hard Magnetic Materials (AREA)
  • Powder Metallurgy (AREA)

Abstract

FePt-C-BASED SPUTTERING TARGET Through the present invention, a thin film containing an FePt-based alloy and carbon, the thin film being capable of being 5 used as a magnetic recording medium, is enabled to be formed using one target, and amount of particles is enabled to be reduced. An FePt-C-based sputtering target containing Fe, Pt, and C, wherein the FePt-C-based sputtering target has a structure in which a C phase substantially being C is dispersed in an FePt-based alloy 10 phase containing 33 mol% or more and 60 mol% or less of Pt with the balance substantially being Fe, an average value of the size indices a of the C phase is 4.0 mm or more and 9.0 mm or less, and an average value of the nonspherical indices b of the C phase is 3.0 or more. 15 [Figure 6]
SG11201806891QA 2016-03-07 2017-03-02 Fept-c-based sputtering target SG11201806891QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016043888 2016-03-07
PCT/JP2017/008344 WO2017154741A1 (en) 2016-03-07 2017-03-02 Fept-c-based sputtering target

Publications (1)

Publication Number Publication Date
SG11201806891QA true SG11201806891QA (en) 2018-09-27

Family

ID=59789542

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201806891QA SG11201806891QA (en) 2016-03-07 2017-03-02 Fept-c-based sputtering target

Country Status (7)

Country Link
US (1) US10787732B2 (en)
JP (1) JP6383510B2 (en)
CN (1) CN108699679B (en)
MY (1) MY192178A (en)
SG (1) SG11201806891QA (en)
TW (1) TWI675926B (en)
WO (1) WO2017154741A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI663264B (en) * 2017-12-27 2019-06-21 光洋應用材料科技股份有限公司 Rure-containing sputtering target, rure-containing membrane, and method of preparing the same
CN111971412B (en) * 2018-03-27 2022-08-16 Ｊｘ金属株式会社 Sputtering target, method for producing same, and method for producing magnetic recording medium
JP7396993B2 (en) * 2018-09-28 2023-12-12 宇部マテリアルズ株式会社 magnetic recording medium
TW202214881A (en) * 2020-05-18 2022-04-16 日商田中貴金屬工業股份有限公司 Pt-oxide sputtering target and perpendicular magnetic recording medium
TWI761264B (en) * 2021-07-15 2022-04-11 光洋應用材料科技股份有限公司 Fe-pt-ag based sputtering target and method of preparing the same
WO2023079857A1 (en) * 2021-11-05 2023-05-11 Ｊｘ金属株式会社 Fe-Pt-C-BASED SPUTTERING TARGET MEMBER, SPUTTERING TARGET ASSEMBLY, METHOD FOR FORMING FILM, AND METHOD FOR PRODUCING SPUTTERING TARGET MEMBER

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100470151B1 (en) 2002-10-29 2005-02-05 한국과학기술원 HIGH-DENSITY MAGNETIC RECORDING MEDIA USING FePtC FILM AND MANUFACTURING METHOD THEREOF
JP5590322B2 (en) 2010-11-12 2014-09-17 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same
JP5912559B2 (en) 2011-03-30 2016-04-27 田中貴金属工業株式会社 Method for producing FePt-C sputtering target
TWI504768B (en) 2012-01-13 2015-10-21 Tanaka Precious Metal Ind FePt sputtering target and its manufacturing method
JP5592022B2 (en) 2012-06-18 2014-09-17 Ｊｘ日鉱日石金属株式会社 Sputtering target for magnetic recording film
JP5457615B1 (en) 2012-07-20 2014-04-02 Ｊｘ日鉱日石金属株式会社 Sputtering target for forming a magnetic recording film and method for producing the same
JP6088811B2 (en) 2012-12-13 2017-03-01 昭和電工株式会社 Sputtering target manufacturing method and magnetic recording medium manufacturing method
SG11201506426TA (en) 2013-03-01 2015-09-29 Tanaka Precious Metal Ind FePt-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME
SG11201506097YA (en) 2013-04-26 2015-09-29 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film, and raw carbon material for use in producing same
JP6422096B2 (en) * 2014-03-14 2018-11-14 Ｊｘ金属株式会社 Fe-Pt sputtering target in which C particles are dispersed

Also Published As

Publication number Publication date
JP6383510B2 (en) 2018-08-29
CN108699679A (en) 2018-10-23
TWI675926B (en) 2019-11-01
US10787732B2 (en) 2020-09-29
TW201809329A (en) 2018-03-16
MY192178A (en) 2022-08-04
JPWO2017154741A1 (en) 2018-10-04
CN108699679B (en) 2020-09-29
US20190292650A1 (en) 2019-09-26
WO2017154741A1 (en) 2017-09-14

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