SG11201709209UA - Novel (meth)acryloyl compound and method for producing same - Google Patents
Novel (meth)acryloyl compound and method for producing sameInfo
- Publication number
- SG11201709209UA SG11201709209UA SG11201709209UA SG11201709209UA SG11201709209UA SG 11201709209U A SG11201709209U A SG 11201709209UA SG 11201709209U A SG11201709209U A SG 11201709209UA SG 11201709209U A SG11201709209U A SG 11201709209UA SG 11201709209U A SG11201709209U A SG 11201709209UA
- Authority
- SG
- Singapore
- Prior art keywords
- meth
- novel
- producing same
- acryloyl compound
- acryloyl
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/017—Esters of hydroxy compounds having the esterified hydroxy group bound to a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B61/00—Other general methods
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/14—Preparation of carboxylic acid esters from carboxylic acid halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/587—Monocarboxylic acid esters having at least two carbon-to-carbon double bonds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
- C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
- C07D311/82—Xanthenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
- C07D311/92—Naphthopyrans; Hydrogenated naphthopyrans
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015145643 | 2015-07-23 | ||
PCT/JP2016/071448 WO2017014285A1 (en) | 2015-07-23 | 2016-07-21 | New (meth)acryloyl compound and production method for same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201709209UA true SG11201709209UA (en) | 2017-12-28 |
Family
ID=57834389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201709209UA SG11201709209UA (en) | 2015-07-23 | 2016-07-21 | Novel (meth)acryloyl compound and method for producing same |
Country Status (8)
Country | Link |
---|---|
US (1) | US10723690B2 (en) |
EP (1) | EP3326997A4 (en) |
JP (1) | JP6853957B2 (en) |
KR (1) | KR20180034427A (en) |
CN (1) | CN107848946A (en) |
SG (1) | SG11201709209UA (en) |
TW (1) | TW201718445A (en) |
WO (1) | WO2017014285A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190034213A (en) * | 2016-07-21 | 2019-04-01 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | COMPOSITIONS, RESINS, COMPOSITIONS |
KR20190034149A (en) * | 2016-07-21 | 2019-04-01 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | COMPOSITIONS, RESINS AND COMPOSITIONS, AND RESIST PATTERN FORMING METHOD |
KR102511277B1 (en) * | 2017-01-13 | 2023-03-17 | 닛산 가가쿠 가부시키가이샤 | Resist underlayer film forming composition containing an amide solvent |
KR20190124716A (en) * | 2017-02-28 | 2019-11-05 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Method for Purifying Compound or Resin and Method for Preparing Composition |
JP2018154600A (en) * | 2017-03-21 | 2018-10-04 | 三菱瓦斯化学株式会社 | Compound, resin, composition, patterning method, and purifying method |
KR20210047822A (en) * | 2018-08-24 | 2021-04-30 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Compound, and composition containing the same, and a method of forming a resist pattern and a method of forming an insulating film |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3071155D1 (en) * | 1979-12-22 | 1985-11-07 | Ciba Geigy Ag | Compositions containing acrylate and their polymerisation |
US4387204A (en) | 1980-04-11 | 1983-06-07 | Ciba-Geigy Corporation | Self-crosslinkable monomer composition containing alkenylphenyl substituted acrylates or methacrylates |
US4320144A (en) * | 1981-04-03 | 1982-03-16 | Gaf Corporation | Fungicidal use of diphenyl esters of alkylenes |
JPS62191850A (en) * | 1986-02-17 | 1987-08-22 | Nec Corp | Positive resist material |
JP3892926B2 (en) | 1996-01-26 | 2007-03-14 | 新中村化学工業株式会社 | Calixarene derivative and curable resin composition containing the same |
JP3731979B2 (en) | 1997-07-29 | 2006-01-05 | 新中村化学工業株式会社 | Calixarene derivative and curable resin composition containing the same |
JP4102033B2 (en) | 2001-03-27 | 2008-06-18 | 本州化学工業株式会社 | Novel (meth) acrylic acid triesters |
WO2006132139A1 (en) * | 2005-06-06 | 2006-12-14 | Mitsubishi Gas Chemical Company, Inc. | Compound for resist and resist composition |
JP2010138393A (en) | 2008-11-13 | 2010-06-24 | Nippon Kayaku Co Ltd | Energy ray-curable resin composition for optical lens sheet, and cured product thereof |
JP5750231B2 (en) * | 2010-03-30 | 2015-07-15 | 富士フイルム株式会社 | Coating composition, optical film, polarizing plate, and image display device |
CN103733136B (en) * | 2011-08-12 | 2017-06-23 | 三菱瓦斯化学株式会社 | Lower layer film for lithography forms material, lower layer film for lithography and pattern formation method |
US9182666B2 (en) | 2011-11-18 | 2015-11-10 | Mitsubishi Gas Chemical Co., Inc. | Cyclic compound, method for producing the same, radiation-sensitive composition, and resist pattern formation method |
KR101955951B1 (en) | 2012-07-25 | 2019-03-08 | 디아이씨 가부시끼가이샤 | Radically curable compound, method for producing radically curable compound, radically curable composition, cured product thereof, and composition for resist material |
JP6183790B2 (en) | 2013-02-08 | 2017-08-23 | 三菱瓦斯化学株式会社 | Novel allyl compound and production method thereof |
CN105189431B (en) | 2013-03-29 | 2018-08-10 | 东京应化工业株式会社 | Fluorenes based compound containing vinyl |
FI2980058T3 (en) | 2013-03-29 | 2023-06-21 | Tokyo Ohka Kogyo Co Ltd | Composition containing vinyl-group-containing compound |
JP6343902B2 (en) * | 2013-10-16 | 2018-06-20 | Jnc株式会社 | Polymerizable compound, polymerizable composition, and liquid crystal display device |
JP6240471B2 (en) * | 2013-11-01 | 2017-11-29 | 東京応化工業株式会社 | Reaction development image forming method |
US9920024B2 (en) * | 2013-11-29 | 2018-03-20 | Mitsubishi Gas Chemical Company, Inc. | Method for purifying compound or resin |
JP2015174877A (en) | 2014-03-13 | 2015-10-05 | 日産化学工業株式会社 | Resin composition containing specified hardening acceleration catalyst |
-
2016
- 2016-07-21 WO PCT/JP2016/071448 patent/WO2017014285A1/en active Application Filing
- 2016-07-21 JP JP2017529938A patent/JP6853957B2/en active Active
- 2016-07-21 SG SG11201709209UA patent/SG11201709209UA/en unknown
- 2016-07-21 EP EP16827845.5A patent/EP3326997A4/en not_active Withdrawn
- 2016-07-21 KR KR1020187002318A patent/KR20180034427A/en unknown
- 2016-07-21 CN CN201680042965.4A patent/CN107848946A/en not_active Withdrawn
- 2016-07-21 US US15/746,703 patent/US10723690B2/en active Active
- 2016-07-22 TW TW105123262A patent/TW201718445A/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20180034427A (en) | 2018-04-04 |
TW201718445A (en) | 2017-06-01 |
EP3326997A1 (en) | 2018-05-30 |
JPWO2017014285A1 (en) | 2018-05-10 |
US10723690B2 (en) | 2020-07-28 |
WO2017014285A1 (en) | 2017-01-26 |
EP3326997A4 (en) | 2019-04-03 |
JP6853957B2 (en) | 2021-04-07 |
US20180210341A1 (en) | 2018-07-26 |
CN107848946A (en) | 2018-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3133058A4 (en) | Multifunctional (meth)acrylate manufacturing method | |
EP3377307A4 (en) | Structural composition and method | |
EP3335095A4 (en) | Device and method for executing application | |
SG11201709209UA (en) | Novel (meth)acryloyl compound and method for producing same | |
EP3281933A4 (en) | (meth)acrylate manufacturing method | |
EP3398957A4 (en) | Method for synthesizing etelcalcetide | |
SG11202003032XA (en) | Process for preparing dimethylaminoalkyl (meth)acrylates | |
EP3327505A4 (en) | Novel compound and method for producing same | |
SG11201707364UA (en) | Improved process for producing (meth)acrylic acid | |
EP3255030A4 (en) | Method for producing acrylic acid | |
EP3632890A4 (en) | Method for producing (meth)acrylic acid | |
PL3004200T3 (en) | Method for producing urethane (meth)acrylates | |
PL3015485T3 (en) | Method for the preparation of radiation-curable urethane (meth)acrylates | |
EP3103819A4 (en) | Production method of (meth)acrylic resin composition | |
EP3239191A4 (en) | Process for producing (meth)acrylic resin composition | |
GB201503776D0 (en) | Compound and method | |
EP3109246A4 (en) | Thiopyranose compound and method for producing same | |
EP3088424A4 (en) | Method for manufacturing (meth)acrylic resin composition | |
EP3348583A4 (en) | Method for producing (meth)acrylic polymer having substituent at one end | |
SG11201700702SA (en) | Improved method for producing alkyl (meth)acrylates | |
EP3269700A4 (en) | Method for producing (meth)acrylate | |
EP3368040A4 (en) | Methods and compositions for recovery from stroke | |
EP3185462A4 (en) | Linear transformation method (variants) | |
EP3345996A4 (en) | Method for producing -glutamyl-valyl-glycine | |
EP3269701A4 (en) | Method for preparing (meth)acrylic acid ester compound |