SG11201704357TA - Single-crystal diamond material, single-crystal diamond chip, and perforated tool - Google Patents

Single-crystal diamond material, single-crystal diamond chip, and perforated tool

Info

Publication number
SG11201704357TA
SG11201704357TA SG11201704357TA SG11201704357TA SG11201704357TA SG 11201704357T A SG11201704357T A SG 11201704357TA SG 11201704357T A SG11201704357T A SG 11201704357TA SG 11201704357T A SG11201704357T A SG 11201704357TA SG 11201704357T A SG11201704357T A SG 11201704357TA
Authority
SG
Singapore
Prior art keywords
crystal diamond
chip
perforated tool
diamond material
perforated
Prior art date
Application number
SG11201704357TA
Inventor
Yoshiki Nishibayashi
Natsuo Tatsumi
Hitoshi Sumiya
Akihiko Ueda
Yutaka Kobayashi
Original Assignee
Sumitomo Electric Industries
Sumitomo Electric Hardmetal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries, Sumitomo Electric Hardmetal Corp filed Critical Sumitomo Electric Industries
Publication of SG11201704357TA publication Critical patent/SG11201704357TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
    • B21C3/02—Dies; Selection of material therefor; Cleaning thereof
    • B21C3/025—Dies; Selection of material therefor; Cleaning thereof comprising diamond parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B2226/00—Materials of tools or workpieces not comprising a metal
    • B23B2226/31—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drilling Tools (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
SG11201704357TA 2015-07-22 2016-07-22 Single-crystal diamond material, single-crystal diamond chip, and perforated tool SG11201704357TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015145025 2015-07-22
PCT/JP2016/071603 WO2017014311A1 (en) 2015-07-22 2016-07-22 Single crystal diamond material, single crystal diamond tip, and drilling tool

Publications (1)

Publication Number Publication Date
SG11201704357TA true SG11201704357TA (en) 2017-06-29

Family

ID=57834394

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704357TA SG11201704357TA (en) 2015-07-22 2016-07-22 Single-crystal diamond material, single-crystal diamond chip, and perforated tool

Country Status (7)

Country Link
US (2) US10287708B2 (en)
EP (1) EP3327179B1 (en)
JP (1) JP6118954B1 (en)
KR (1) KR102626684B1 (en)
CN (1) CN107109691B (en)
SG (1) SG11201704357TA (en)
WO (1) WO2017014311A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6118954B1 (en) * 2015-07-22 2017-04-19 住友電気工業株式会社 Single crystal diamond material, single crystal diamond tips and drilling tools
JPWO2020031871A1 (en) * 2018-08-06 2021-08-26 住友電工ハードメタル株式会社 Turning tool
CN116348624A (en) * 2020-10-22 2023-06-27 住友电工硬质合金株式会社 Diamond sintered body and tool provided with diamond sintered body
EP4269004A4 (en) * 2020-12-24 2024-01-24 Sumitomo Electric Hardmetal Corp Method for producing diamond tool intermediate and method for determining single crystal diamond

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59229227A (en) 1983-06-08 1984-12-22 Sumitomo Electric Ind Ltd Die using single crystal of synthetic diamond
JP2620252B2 (en) * 1987-09-17 1997-06-11 住友電気工業株式会社 Method for producing nitrogen-containing hard carbon film
DE69016240T3 (en) * 1989-04-06 1999-03-11 Sumitomo Electric Industries Diamond for dressing device
JP4291886B2 (en) * 1994-12-05 2009-07-08 住友電気工業株式会社 Low defect diamond single crystal and synthesis method thereof
DE69717635T2 (en) 1996-07-30 2003-04-10 Drukker Internat B V METHOD FOR PRODUCING A CUTTING INSERT FOR CUTTING TOOL
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
JP2000288804A (en) 1999-04-06 2000-10-17 Osaka Diamond Ind Co Ltd Diamond cutting tool
JP3554700B2 (en) 2000-09-27 2004-08-18 株式会社アライドマテリアル Diamond dies
GB0220772D0 (en) * 2002-09-06 2002-10-16 Diamanx Products Ltd Coloured diamond
JP2004214264A (en) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd LOW-RESISTANCE n-TYPE SEMICONDUCTOR DIAMOND AND ITS MANUFACTURING METHOD
EP1671726B1 (en) * 2003-10-10 2013-02-13 Sumitomo Electric Industries, Ltd. Diamond tool
WO2007018555A2 (en) * 2004-09-10 2007-02-15 Carnegie Institution Of Washington Ultratough cvd single crystal diamond and three dimensional growth thereof
JP5323492B2 (en) * 2005-12-09 2013-10-23 エレメント シックス テクノロジーズ （プロプライアタリー） リミテッド Synthetic diamond with high crystal quality
GB2481283B (en) * 2010-06-03 2013-07-17 Element Six Ltd A method of increasing the toughness and/or wear resistance of diamond tool pieces and diamond tool pieces fabricated by said method
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
CN104395508B (en) * 2012-06-29 2016-12-21 住友电气工业株式会社 Diamond single crystal, its manufacture method and MONOCRYSTAL DIAMOND TOOLS
EP2824649A1 (en) * 2013-07-12 2015-01-14 GN Store Nord A/S Audio based learning system comprising a portable terminal connected to an audio unit and plurality of zones
JP6228404B2 (en) * 2013-08-09 2017-11-08 住友電気工業株式会社 Diamond composite, diamond bonded body, single crystal diamond and tool including the same
EP3170926A4 (en) 2014-07-15 2018-07-11 Sumitomo Electric Industries, Ltd. Single crystal diamond, method for producing single crystal diamond, and tool using single crystal diamond
JP6708972B2 (en) 2014-07-22 2020-06-10 住友電気工業株式会社 Single crystal diamond and its manufacturing method, tool containing single crystal diamond, and component containing single crystal diamond
CN107109690B (en) * 2014-10-29 2019-08-20 住友电气工业株式会社 Single crystal diamond material and tool, radiation temperature monitor and infrared optics component including the diamond
JP6118954B1 (en) * 2015-07-22 2017-04-19 住友電気工業株式会社 Single crystal diamond material, single crystal diamond tips and drilling tools

Also Published As

Publication number Publication date
US20190218685A1 (en) 2019-07-18
JPWO2017014311A1 (en) 2017-07-20
US10774442B2 (en) 2020-09-15
EP3327179A1 (en) 2018-05-30
US20170241042A1 (en) 2017-08-24
KR20180034301A (en) 2018-04-04
EP3327179B1 (en) 2023-08-23
WO2017014311A9 (en) 2017-05-11
KR102626684B1 (en) 2024-01-17
EP3327179A4 (en) 2019-01-23
WO2017014311A1 (en) 2017-01-26
CN107109691A (en) 2017-08-29
CN107109691B (en) 2021-05-25
US10287708B2 (en) 2019-05-14
JP6118954B1 (en) 2017-04-19

Similar Documents

Publication Publication Date Title
SG11201608711RA (en) Material itq-55, method for preparation and use
EP3395972A4 (en) Shaped material for downhole tool member, downhole tool member, and downhole tool
ZA201607897B (en) Polycrystalline diamond compact, and related methods and applications
PL3266756T3 (en) Polycrystalline diamond body, cutting tool, wear-resistant tool, and grinding tool
GB2550689B (en) Diamond tool piece
PL3351520T3 (en) Method for producing diamond polycrystal and, diamond polycrystal
GB2530610B (en) Cubic boron nitride composite material, method of using it, method of making it and tool comprising it
SG11201703248YA (en) Ceramic end mill and method for cutting difficult-to-cut material using the same
EP3391769C0 (en) Magnified-look diamond jewelry
ZA201704736B (en) Polycrystalline diamond cutters having non-catalytic material addition and methods of making the same
ZA201802527B (en) Cutting elements for earth-boring tools, earth-boring tools including such cutting elements, and related methods
ZA201803642B (en) Polycrystalline diamond cutters having non-catalytic material addition and methods of making the same
HUE050434T2 (en) Bonding material and bonding method using same
ZA201801990B (en) Polycrystalline diamond, methods of forming same, cutting elements, and earth-boring tools
GB201412213D0 (en) Material,composition and method
EP3173510A4 (en) Single-crystal diamond and method for manufacturing same, tool including single-crystal diamond, and component including single-crystal diamond
SG11201704357TA (en) Single-crystal diamond material, single-crystal diamond chip, and perforated tool
GB201610537D0 (en) Improved oval shaped diamond cut having hearts and arrows pattern
IL266091A (en) Cutting tool, insert holder and insert
EP3366815A4 (en) Single-crystal diamond, tool using same, and manufacturing method for single-crystal diamond
EP3156177A4 (en) Diamond-containing brazing material and diamond-bonded tools utilizing same
GB2514690B (en) PCBN material, tool elements comprising same and method for using same
SG11201800522PA (en) Diamond die
PT3242764T (en) Carrier tool, cutting insert, and clamping element
PL3712304T3 (en) Diamond polycrystal and method for producing the same