SG11201703560VA - Wafer defect discovery - Google Patents
Wafer defect discoveryInfo
- Publication number
- SG11201703560VA SG11201703560VA SG11201703560VA SG11201703560VA SG11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer defect
- defect discovery
- discovery
- wafer
- defect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462075002P | 2014-11-04 | 2014-11-04 | |
US14/931,226 US9518934B2 (en) | 2014-11-04 | 2015-11-03 | Wafer defect discovery |
PCT/US2015/059085 WO2016073638A1 (en) | 2014-11-04 | 2015-11-04 | Wafer defect discovery |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201703560VA true SG11201703560VA (en) | 2017-05-30 |
Family
ID=55852384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201703560VA SG11201703560VA (en) | 2014-11-04 | 2015-11-04 | Wafer defect discovery |
Country Status (7)
Country | Link |
---|---|
US (2) | US9518934B2 (en) |
JP (1) | JP6490211B2 (en) |
KR (1) | KR102276925B1 (en) |
CN (1) | CN107003249B (en) |
SG (1) | SG11201703560VA (en) |
TW (1) | TWI644378B (en) |
WO (1) | WO2016073638A1 (en) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9518934B2 (en) * | 2014-11-04 | 2016-12-13 | Kla-Tencor Corp. | Wafer defect discovery |
US9702827B1 (en) * | 2014-11-20 | 2017-07-11 | Kla-Tencor Corp. | Optical mode analysis with design-based care areas |
EP3086175B1 (en) * | 2015-04-22 | 2022-01-26 | IMEC vzw | Method for hotspot detection and ranking of a lithographic mask |
US10204290B2 (en) * | 2016-10-14 | 2019-02-12 | Kla-Tencor Corporation | Defect review sampling and normalization based on defect and design attributes |
JP6353008B2 (en) * | 2016-11-02 | 2018-07-04 | ファナック株式会社 | Inspection condition determination device, inspection condition determination method, and inspection condition determination program |
US10679909B2 (en) | 2016-11-21 | 2020-06-09 | Kla-Tencor Corporation | System, method and non-transitory computer readable medium for tuning sensitivies of, and determining a process window for, a modulated wafer |
US11047806B2 (en) * | 2016-11-30 | 2021-06-29 | Kla-Tencor Corporation | Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures |
US10365617B2 (en) * | 2016-12-12 | 2019-07-30 | Dmo Systems Limited | Auto defect screening using adaptive machine learning in semiconductor device manufacturing flow |
US10234402B2 (en) | 2017-01-05 | 2019-03-19 | Kla-Tencor Corporation | Systems and methods for defect material classification |
JP6731370B2 (en) | 2017-03-27 | 2020-07-29 | 株式会社日立ハイテク | Image processing system and computer program for performing image processing |
US10733744B2 (en) * | 2017-05-11 | 2020-08-04 | Kla-Tencor Corp. | Learning based approach for aligning images acquired with different modalities |
US10620135B2 (en) * | 2017-07-19 | 2020-04-14 | Kla-Tencor Corp. | Identifying a source of nuisance defects on a wafer |
US10713534B2 (en) * | 2017-09-01 | 2020-07-14 | Kla-Tencor Corp. | Training a learning based defect classifier |
EP3454128B1 (en) * | 2017-09-12 | 2020-01-29 | IMEC vzw | A method and system for detecting defects of a lithographic pattern |
US11514357B2 (en) * | 2018-03-19 | 2022-11-29 | Kla-Tencor Corporation | Nuisance mining for novel defect discovery |
US11056366B2 (en) * | 2018-03-23 | 2021-07-06 | Kla Corporation | Sample transport device with integrated metrology |
US10670536B2 (en) * | 2018-03-28 | 2020-06-02 | Kla-Tencor Corp. | Mode selection for inspection |
JP6675433B2 (en) * | 2018-04-25 | 2020-04-01 | 信越化学工業株式会社 | Defect classification method, photomask blank sorting method, and mask blank manufacturing method |
US11151711B2 (en) * | 2018-06-06 | 2021-10-19 | Kla-Tencor Corporation | Cross layer common-unique analysis for nuisance filtering |
US10801968B2 (en) * | 2018-10-26 | 2020-10-13 | Kla-Tencor Corporation | Algorithm selector based on image frames |
US10545099B1 (en) * | 2018-11-07 | 2020-01-28 | Kla-Tencor Corporation | Ultra-high sensitivity hybrid inspection with full wafer coverage capability |
US11010885B2 (en) * | 2018-12-18 | 2021-05-18 | Kla Corporation | Optical-mode selection for multi-mode semiconductor inspection |
US10930597B2 (en) * | 2019-03-27 | 2021-02-23 | Kla-Tencor Corporation | Die screening using inline defect information |
US11114324B2 (en) | 2019-04-10 | 2021-09-07 | KLA Corp. | Defect candidate generation for inspection |
CN110068578B (en) * | 2019-05-17 | 2022-02-22 | 苏州图迈蓝舸智能科技有限公司 | Apparent defect detection method and device for PVC (polyvinyl chloride) floor and terminal equipment |
JP7222821B2 (en) * | 2019-06-14 | 2023-02-15 | 株式会社ニューフレアテクノロジー | Multi-beam inspection system |
US11055840B2 (en) | 2019-08-07 | 2021-07-06 | Kla Corporation | Semiconductor hot-spot and process-window discovery combining optical and electron-beam inspection |
JP7194837B2 (en) * | 2019-09-04 | 2022-12-22 | 株式会社日立ハイテク | Charged particle beam device |
US11410292B2 (en) | 2019-09-27 | 2022-08-09 | Kla Corporation | Equi-probability defect detection |
KR20230056781A (en) * | 2020-09-02 | 2023-04-27 | 어플라이드 머티리얼즈 이스라엘 리미티드 | Multi-perspective wafer analysis |
US11967056B2 (en) | 2020-12-31 | 2024-04-23 | Infrastructure Dl, Llc | Systems, methods and apparatuses for detecting and analyzing defects in underground infrastructure systems |
US11887296B2 (en) * | 2021-07-05 | 2024-01-30 | KLA Corp. | Setting up care areas for inspection of a specimen |
WO2023016723A1 (en) * | 2021-08-11 | 2023-02-16 | Asml Netherlands B.V. | Mask defect detection |
CN113628212B (en) * | 2021-10-12 | 2022-03-11 | 高视科技(苏州)有限公司 | Defective polarizer identification method, electronic device, and storage medium |
US11922619B2 (en) | 2022-03-31 | 2024-03-05 | Kla Corporation | Context-based defect inspection |
US20230314336A1 (en) | 2022-03-31 | 2023-10-05 | Kla Corporation | Multi-mode optical inspection |
CN115360116B (en) * | 2022-10-21 | 2023-01-31 | 合肥晶合集成电路股份有限公司 | Wafer defect detection method and system |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903342A (en) * | 1995-04-10 | 1999-05-11 | Hitachi Electronics Engineering, Co., Ltd. | Inspection method and device of wafer surface |
US5999003A (en) | 1997-12-12 | 1999-12-07 | Advanced Micro Devices, Inc. | Intelligent usage of first pass defect data for improved statistical accuracy of wafer level classification |
JP4183492B2 (en) * | 2002-11-27 | 2008-11-19 | 株式会社日立製作所 | Defect inspection apparatus and defect inspection method |
US7569463B2 (en) * | 2006-03-08 | 2009-08-04 | Applied Materials, Inc. | Method of thermal processing structures formed on a substrate |
JP4908995B2 (en) * | 2006-09-27 | 2012-04-04 | 株式会社日立ハイテクノロジーズ | Defect classification method and apparatus, and defect inspection apparatus |
US8194968B2 (en) | 2007-01-05 | 2012-06-05 | Kla-Tencor Corp. | Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions |
US8698093B1 (en) | 2007-01-19 | 2014-04-15 | Kla-Tencor Corporation | Objective lens with deflector plates immersed in electrostatic lens field |
US8000922B2 (en) * | 2008-05-29 | 2011-08-16 | Kla-Tencor Corp. | Methods and systems for generating information to be used for selecting values for one or more parameters of a detection algorithm |
CN102396058B (en) * | 2009-02-13 | 2014-08-20 | 恪纳腾公司 | Detecting defects on a wafer |
JP5537282B2 (en) * | 2009-09-28 | 2014-07-02 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and defect inspection method |
US8664594B1 (en) | 2011-04-18 | 2014-03-04 | Kla-Tencor Corporation | Electron-optical system for high-speed and high-sensitivity inspections |
US8692204B2 (en) | 2011-04-26 | 2014-04-08 | Kla-Tencor Corporation | Apparatus and methods for electron beam detection |
KR20140041707A (en) * | 2011-06-13 | 2014-04-04 | 파커-한니핀 코포레이션 | Pumped loop cooling system |
US9176069B2 (en) * | 2012-02-10 | 2015-11-03 | Kla-Tencor Corporation | System and method for apodization in a semiconductor device inspection system |
US8716662B1 (en) | 2012-07-16 | 2014-05-06 | Kla-Tencor Corporation | Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations |
US9053390B2 (en) | 2012-08-14 | 2015-06-09 | Kla-Tencor Corporation | Automated inspection scenario generation |
US9053527B2 (en) * | 2013-01-02 | 2015-06-09 | Kla-Tencor Corp. | Detecting defects on a wafer |
TWI601937B (en) * | 2013-01-14 | 2017-10-11 | 克萊譚克公司 | Ellipsometer apparatus for performing metrology of a semiconductor sample |
US9095952B2 (en) * | 2013-01-23 | 2015-08-04 | Applied Materials, Inc. | Reflectivity measurements during polishing using a camera |
US9518934B2 (en) * | 2014-11-04 | 2016-12-13 | Kla-Tencor Corp. | Wafer defect discovery |
-
2015
- 2015-11-03 US US14/931,226 patent/US9518934B2/en active Active
- 2015-11-04 KR KR1020177014926A patent/KR102276925B1/en active IP Right Grant
- 2015-11-04 JP JP2017524360A patent/JP6490211B2/en active Active
- 2015-11-04 CN CN201580059575.3A patent/CN107003249B/en active Active
- 2015-11-04 WO PCT/US2015/059085 patent/WO2016073638A1/en active Application Filing
- 2015-11-04 TW TW104136373A patent/TWI644378B/en active
- 2015-11-04 SG SG11201703560VA patent/SG11201703560VA/en unknown
-
2016
- 2016-11-22 US US15/359,589 patent/US20170076911A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20170082559A (en) | 2017-07-14 |
TWI644378B (en) | 2018-12-11 |
WO2016073638A1 (en) | 2016-05-12 |
US20160123898A1 (en) | 2016-05-05 |
JP6490211B2 (en) | 2019-03-27 |
JP2018504768A (en) | 2018-02-15 |
US20170076911A1 (en) | 2017-03-16 |
CN107003249A (en) | 2017-08-01 |
US9518934B2 (en) | 2016-12-13 |
TW201626478A (en) | 2016-07-16 |
KR102276925B1 (en) | 2021-07-12 |
CN107003249B (en) | 2018-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201703560VA (en) | Wafer defect discovery | |
IL251451A0 (en) | Methods for restricted direct discovery | |
SG11201610106SA (en) | Computational wafer inspection | |
GB2527921B (en) | Wafer releasing | |
IL250089B (en) | Metrology multiple pattterning processes | |
EP3223712C0 (en) | Devices for pulmonary hypertension treatment | |
EP3132467A4 (en) | Wafer metrology technologies | |
SG10201601379WA (en) | Retaining ring for lower wafer defects | |
GB201420908D0 (en) | Biomarkers | |
GB201401603D0 (en) | Biomarkers | |
TWI560882B (en) | Semiconductor structure | |
HK1211817A1 (en) | Case for cleaner | |
PL3191245T3 (en) | Chuck | |
GB201420531D0 (en) | Semiconductor structure | |
GB201410317D0 (en) | Substrate | |
GB201519339D0 (en) | Tyre inspection | |
GB201701519D0 (en) | Substrate manufacture | |
GB201417271D0 (en) | Testing devices | |
GB201410005D0 (en) | Cajon | |
GB201416015D0 (en) | Biomarker | |
GB201417447D0 (en) | Improved immunoassay for pyrrolidinophenones | |
GB201417367D0 (en) | Inspection device | |
GB2522037B (en) | Test arrangement | |
SG10201506024WA (en) | Semiconductor fabrication process | |
EP3128552A4 (en) | Wafer circuit |