SG11201703560VA - Wafer defect discovery - Google Patents

Wafer defect discovery

Info

Publication number
SG11201703560VA
SG11201703560VA SG11201703560VA SG11201703560VA SG11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA SG 11201703560V A SG11201703560V A SG 11201703560VA
Authority
SG
Singapore
Prior art keywords
wafer defect
defect discovery
discovery
wafer
defect
Prior art date
Application number
SG11201703560VA
Inventor
Hong Chen
Kenong Wu
Martin Plihal
Vidur Pandita
Ravikumar Sanapala
Vivek Bhagat
Rahul Lakhawat
Oksen Baris
Rajesh Ramachandran
Noashin Haque
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201703560VA publication Critical patent/SG11201703560VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
SG11201703560VA 2014-11-04 2015-11-04 Wafer defect discovery SG11201703560VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462075002P 2014-11-04 2014-11-04
US14/931,226 US9518934B2 (en) 2014-11-04 2015-11-03 Wafer defect discovery
PCT/US2015/059085 WO2016073638A1 (en) 2014-11-04 2015-11-04 Wafer defect discovery

Publications (1)

Publication Number Publication Date
SG11201703560VA true SG11201703560VA (en) 2017-05-30

Family

ID=55852384

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201703560VA SG11201703560VA (en) 2014-11-04 2015-11-04 Wafer defect discovery

Country Status (7)

Country Link
US (2) US9518934B2 (en)
JP (1) JP6490211B2 (en)
KR (1) KR102276925B1 (en)
CN (1) CN107003249B (en)
SG (1) SG11201703560VA (en)
TW (1) TWI644378B (en)
WO (1) WO2016073638A1 (en)

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US9518934B2 (en) * 2014-11-04 2016-12-13 Kla-Tencor Corp. Wafer defect discovery
US9702827B1 (en) * 2014-11-20 2017-07-11 Kla-Tencor Corp. Optical mode analysis with design-based care areas
EP3086175B1 (en) * 2015-04-22 2022-01-26 IMEC vzw Method for hotspot detection and ranking of a lithographic mask
US10204290B2 (en) * 2016-10-14 2019-02-12 Kla-Tencor Corporation Defect review sampling and normalization based on defect and design attributes
JP6353008B2 (en) * 2016-11-02 2018-07-04 ファナック株式会社 Inspection condition determination device, inspection condition determination method, and inspection condition determination program
US10679909B2 (en) 2016-11-21 2020-06-09 Kla-Tencor Corporation System, method and non-transitory computer readable medium for tuning sensitivies of, and determining a process window for, a modulated wafer
US11047806B2 (en) * 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
US10365617B2 (en) * 2016-12-12 2019-07-30 Dmo Systems Limited Auto defect screening using adaptive machine learning in semiconductor device manufacturing flow
US10234402B2 (en) 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
JP6731370B2 (en) 2017-03-27 2020-07-29 株式会社日立ハイテク Image processing system and computer program for performing image processing
US10733744B2 (en) * 2017-05-11 2020-08-04 Kla-Tencor Corp. Learning based approach for aligning images acquired with different modalities
US10620135B2 (en) * 2017-07-19 2020-04-14 Kla-Tencor Corp. Identifying a source of nuisance defects on a wafer
US10713534B2 (en) * 2017-09-01 2020-07-14 Kla-Tencor Corp. Training a learning based defect classifier
EP3454128B1 (en) * 2017-09-12 2020-01-29 IMEC vzw A method and system for detecting defects of a lithographic pattern
US11514357B2 (en) * 2018-03-19 2022-11-29 Kla-Tencor Corporation Nuisance mining for novel defect discovery
US11056366B2 (en) * 2018-03-23 2021-07-06 Kla Corporation Sample transport device with integrated metrology
US10670536B2 (en) * 2018-03-28 2020-06-02 Kla-Tencor Corp. Mode selection for inspection
JP6675433B2 (en) * 2018-04-25 2020-04-01 信越化学工業株式会社 Defect classification method, photomask blank sorting method, and mask blank manufacturing method
US11151711B2 (en) * 2018-06-06 2021-10-19 Kla-Tencor Corporation Cross layer common-unique analysis for nuisance filtering
US10801968B2 (en) * 2018-10-26 2020-10-13 Kla-Tencor Corporation Algorithm selector based on image frames
US10545099B1 (en) 2018-11-07 2020-01-28 Kla-Tencor Corporation Ultra-high sensitivity hybrid inspection with full wafer coverage capability
US11010885B2 (en) * 2018-12-18 2021-05-18 Kla Corporation Optical-mode selection for multi-mode semiconductor inspection
US10930597B2 (en) * 2019-03-27 2021-02-23 Kla-Tencor Corporation Die screening using inline defect information
US11114324B2 (en) 2019-04-10 2021-09-07 KLA Corp. Defect candidate generation for inspection
CN110068578B (en) * 2019-05-17 2022-02-22 苏州图迈蓝舸智能科技有限公司 Apparent defect detection method and device for PVC (polyvinyl chloride) floor and terminal equipment
JP7222821B2 (en) * 2019-06-14 2023-02-15 株式会社ニューフレアテクノロジー Multi-beam inspection system
US11055840B2 (en) * 2019-08-07 2021-07-06 Kla Corporation Semiconductor hot-spot and process-window discovery combining optical and electron-beam inspection
CN114270182A (en) * 2019-09-04 2022-04-01 株式会社日立高新技术 Charged particle beam device
US11410292B2 (en) 2019-09-27 2022-08-09 Kla Corporation Equi-probability defect detection
TW202221314A (en) * 2020-09-02 2022-06-01 以色列商應用材料以色列公司 Multi-perspective wafer analysis
US11967056B2 (en) * 2020-12-31 2024-04-23 Infrastructure Dl, Llc Systems, methods and apparatuses for detecting and analyzing defects in underground infrastructure systems
US11887296B2 (en) * 2021-07-05 2024-01-30 KLA Corp. Setting up care areas for inspection of a specimen
CN117813547A (en) * 2021-08-11 2024-04-02 Asml荷兰有限公司 Mask defect detection
CN113628212B (en) * 2021-10-12 2022-03-11 高视科技(苏州)有限公司 Defective polarizer identification method, electronic device, and storage medium
US20230314336A1 (en) 2022-03-31 2023-10-05 Kla Corporation Multi-mode optical inspection
US11922619B2 (en) 2022-03-31 2024-03-05 Kla Corporation Context-based defect inspection
CN115360116B (en) * 2022-10-21 2023-01-31 合肥晶合集成电路股份有限公司 Wafer defect detection method and system

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Also Published As

Publication number Publication date
JP6490211B2 (en) 2019-03-27
KR20170082559A (en) 2017-07-14
WO2016073638A1 (en) 2016-05-12
US20160123898A1 (en) 2016-05-05
US9518934B2 (en) 2016-12-13
TW201626478A (en) 2016-07-16
KR102276925B1 (en) 2021-07-12
TWI644378B (en) 2018-12-11
CN107003249A (en) 2017-08-01
JP2018504768A (en) 2018-02-15
CN107003249B (en) 2018-05-18
US20170076911A1 (en) 2017-03-16

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