SG11201700560QA - Method for removing a metal deposit placed on a surface in a chamber - Google Patents
Method for removing a metal deposit placed on a surface in a chamberInfo
- Publication number
- SG11201700560QA SG11201700560QA SG11201700560QA SG11201700560QA SG11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA
- Authority
- SG
- Singapore
- Prior art keywords
- chamber
- metal deposit
- deposit placed
- metal
- deposit
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C45/00—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
- C07C49/04—Saturated compounds containing keto groups bound to acyclic carbon atoms
- C07C49/16—Saturated compounds containing keto groups bound to acyclic carbon atoms containing halogen
- C07C49/167—Saturated compounds containing keto groups bound to acyclic carbon atoms containing halogen containing only fluorine as halogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1457137A FR3024161B1 (en) | 2014-07-24 | 2014-07-24 | METHOD FOR CLEANING A DEPOSIT CHAMBER |
PCT/EP2015/067044 WO2016012610A1 (en) | 2014-07-24 | 2015-07-24 | Method for removing a metal deposit placed on a surface in a chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201700560QA true SG11201700560QA (en) | 2017-02-27 |
Family
ID=51688273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201700560QA SG11201700560QA (en) | 2014-07-24 | 2015-07-24 | Method for removing a metal deposit placed on a surface in a chamber |
Country Status (8)
Country | Link |
---|---|
US (1) | US10246781B2 (en) |
EP (1) | EP3172357B1 (en) |
JP (1) | JP6660384B2 (en) |
KR (1) | KR102447944B1 (en) |
CN (1) | CN106575596B (en) |
FR (1) | FR3024161B1 (en) |
SG (1) | SG11201700560QA (en) |
WO (1) | WO2016012610A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3056992B1 (en) * | 2016-10-04 | 2022-03-11 | Unity Semiconductor | METHOD FOR INJECTION OF CHEMICAL SPECIES IN GASEOUS PHASE IN PULSED FORM WITH PLASMA |
CN113066609A (en) * | 2021-02-02 | 2021-07-02 | 安徽新科电缆集团股份有限公司 | Multifunctional rat-proof and termite-proof direct-current traction cable for rail transit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284052B2 (en) * | 1998-08-19 | 2001-09-04 | Sharp Laboratories Of America, Inc. | In-situ method of cleaning a metal-organic chemical vapor deposition chamber |
AU2003253610A1 (en) * | 2002-06-28 | 2004-01-19 | Tokyo Electron Limited | Anisotropic dry etching of cu-containing layers |
KR20110005683A (en) * | 2008-02-11 | 2011-01-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Ion source cleaning in semiconductor processing systems |
CN102414786B (en) * | 2009-04-28 | 2016-08-24 | 应用材料公司 | NH is utilized in position after cleaning3decontamination of MOCVD chamber processes |
TW201104660A (en) * | 2009-07-31 | 2011-02-01 | Chunghwa Picture Tubes Ltd | Display panel, liquid crystal display module, and method for reducing data lines used on a display panel |
JP5646190B2 (en) * | 2010-03-12 | 2014-12-24 | 東京エレクトロン株式会社 | Cleaning method and processing apparatus |
DE102011056538A1 (en) * | 2011-12-16 | 2013-06-20 | Aixtron Se | Method for removing unwanted residues of process chamber of chemical vapor deposition reactor, involves forming non-volatile intermediate, so that surface coverage degree of residue is increased/decreased at respective phases of cycle |
-
2014
- 2014-07-24 FR FR1457137A patent/FR3024161B1/en active Active
-
2015
- 2015-07-24 JP JP2017524108A patent/JP6660384B2/en active Active
- 2015-07-24 CN CN201580040035.0A patent/CN106575596B/en active Active
- 2015-07-24 SG SG11201700560QA patent/SG11201700560QA/en unknown
- 2015-07-24 US US15/328,413 patent/US10246781B2/en active Active
- 2015-07-24 KR KR1020177004110A patent/KR102447944B1/en active IP Right Grant
- 2015-07-24 EP EP15742243.7A patent/EP3172357B1/en active Active
- 2015-07-24 WO PCT/EP2015/067044 patent/WO2016012610A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US10246781B2 (en) | 2019-04-02 |
CN106575596B (en) | 2018-12-28 |
EP3172357A1 (en) | 2017-05-31 |
FR3024161A1 (en) | 2016-01-29 |
WO2016012610A1 (en) | 2016-01-28 |
US20170204522A1 (en) | 2017-07-20 |
KR20170038838A (en) | 2017-04-07 |
CN106575596A (en) | 2017-04-19 |
KR102447944B1 (en) | 2022-09-26 |
FR3024161B1 (en) | 2016-08-12 |
EP3172357B1 (en) | 2018-05-02 |
JP2017524073A (en) | 2017-08-24 |
JP6660384B2 (en) | 2020-03-11 |
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