SG11201700560QA - Method for removing a metal deposit placed on a surface in a chamber - Google Patents

Method for removing a metal deposit placed on a surface in a chamber

Info

Publication number
SG11201700560QA
SG11201700560QA SG11201700560QA SG11201700560QA SG11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA SG 11201700560Q A SG11201700560Q A SG 11201700560QA
Authority
SG
Singapore
Prior art keywords
chamber
metal deposit
deposit placed
metal
deposit
Prior art date
Application number
SG11201700560QA
Inventor
Julien Vitiello
Jean-Luc Delcarri
Fabien Piallat
Original Assignee
Unity Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unity Semiconductor filed Critical Unity Semiconductor
Publication of SG11201700560QA publication Critical patent/SG11201700560QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C45/00—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/04—Saturated compounds containing keto groups bound to acyclic carbon atoms
    • C07C49/16—Saturated compounds containing keto groups bound to acyclic carbon atoms containing halogen
    • C07C49/167—Saturated compounds containing keto groups bound to acyclic carbon atoms containing halogen containing only fluorine as halogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
SG11201700560QA 2014-07-24 2015-07-24 Method for removing a metal deposit placed on a surface in a chamber SG11201700560QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1457137A FR3024161B1 (en) 2014-07-24 2014-07-24 METHOD FOR CLEANING A DEPOSIT CHAMBER
PCT/EP2015/067044 WO2016012610A1 (en) 2014-07-24 2015-07-24 Method for removing a metal deposit placed on a surface in a chamber

Publications (1)

Publication Number Publication Date
SG11201700560QA true SG11201700560QA (en) 2017-02-27

Family

ID=51688273

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700560QA SG11201700560QA (en) 2014-07-24 2015-07-24 Method for removing a metal deposit placed on a surface in a chamber

Country Status (8)

Country Link
US (1) US10246781B2 (en)
EP (1) EP3172357B1 (en)
JP (1) JP6660384B2 (en)
KR (1) KR102447944B1 (en)
CN (1) CN106575596B (en)
FR (1) FR3024161B1 (en)
SG (1) SG11201700560QA (en)
WO (1) WO2016012610A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3056992B1 (en) * 2016-10-04 2022-03-11 Unity Semiconductor METHOD FOR INJECTION OF CHEMICAL SPECIES IN GASEOUS PHASE IN PULSED FORM WITH PLASMA
CN113066609A (en) * 2021-02-02 2021-07-02 安徽新科电缆集团股份有限公司 Multifunctional rat-proof and termite-proof direct-current traction cable for rail transit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284052B2 (en) * 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
AU2003253610A1 (en) * 2002-06-28 2004-01-19 Tokyo Electron Limited Anisotropic dry etching of cu-containing layers
KR20110005683A (en) * 2008-02-11 2011-01-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ion source cleaning in semiconductor processing systems
CN102414786B (en) * 2009-04-28 2016-08-24 应用材料公司 NH is utilized in position after cleaning3decontamination of MOCVD chamber processes
TW201104660A (en) * 2009-07-31 2011-02-01 Chunghwa Picture Tubes Ltd Display panel, liquid crystal display module, and method for reducing data lines used on a display panel
JP5646190B2 (en) * 2010-03-12 2014-12-24 東京エレクトロン株式会社 Cleaning method and processing apparatus
DE102011056538A1 (en) * 2011-12-16 2013-06-20 Aixtron Se Method for removing unwanted residues of process chamber of chemical vapor deposition reactor, involves forming non-volatile intermediate, so that surface coverage degree of residue is increased/decreased at respective phases of cycle

Also Published As

Publication number Publication date
US10246781B2 (en) 2019-04-02
CN106575596B (en) 2018-12-28
EP3172357A1 (en) 2017-05-31
FR3024161A1 (en) 2016-01-29
WO2016012610A1 (en) 2016-01-28
US20170204522A1 (en) 2017-07-20
KR20170038838A (en) 2017-04-07
CN106575596A (en) 2017-04-19
KR102447944B1 (en) 2022-09-26
FR3024161B1 (en) 2016-08-12
EP3172357B1 (en) 2018-05-02
JP2017524073A (en) 2017-08-24
JP6660384B2 (en) 2020-03-11

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