SG11201606923RA - Apparatus and methods for implementing predicted systematic error correction in location specific processing - Google Patents

Apparatus and methods for implementing predicted systematic error correction in location specific processing

Info

Publication number
SG11201606923RA
SG11201606923RA SG11201606923RA SG11201606923RA SG11201606923RA SG 11201606923R A SG11201606923R A SG 11201606923RA SG 11201606923R A SG11201606923R A SG 11201606923RA SG 11201606923R A SG11201606923R A SG 11201606923RA SG 11201606923R A SG11201606923R A SG 11201606923RA
Authority
SG
Singapore
Prior art keywords
implementing
methods
error correction
specific processing
systematic error
Prior art date
Application number
SG11201606923RA
Inventor
Vincent Lagana-Gizzo
Noel Russell
Joshua Larose
Soo Doo Chae
Original Assignee
Tel Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tel Epion Inc filed Critical Tel Epion Inc
Publication of SG11201606923RA publication Critical patent/SG11201606923RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
SG11201606923RA 2014-02-21 2015-01-08 Apparatus and methods for implementing predicted systematic error correction in location specific processing SG11201606923RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461942835P 2014-02-21 2014-02-21
US14/492,819 US9123505B1 (en) 2014-02-21 2014-09-22 Apparatus and methods for implementing predicted systematic error correction in location specific processing
PCT/US2015/010655 WO2015126534A1 (en) 2014-02-21 2015-01-08 Apparatus and methods for implementing predicted systematic error correction in location specific processing

Publications (1)

Publication Number Publication Date
SG11201606923RA true SG11201606923RA (en) 2016-09-29

Family

ID=53878792

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606923RA SG11201606923RA (en) 2014-02-21 2015-01-08 Apparatus and methods for implementing predicted systematic error correction in location specific processing

Country Status (6)

Country Link
US (1) US9123505B1 (en)
JP (2) JP7009060B2 (en)
DE (1) DE112015000899T5 (en)
SG (1) SG11201606923RA (en)
TW (1) TWI585808B (en)
WO (1) WO2015126534A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6566683B2 (en) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 Substrate cleaning method and substrate cleaning apparatus
JP6545053B2 (en) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 Processing apparatus and processing method, and gas cluster generating apparatus and generating method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4902088B2 (en) 2000-07-10 2012-03-21 ティーイーエル エピオン インク． System and method for improving thin films by gas cluster ion beam processing
JP3982336B2 (en) * 2002-06-13 2007-09-26 信越半導体株式会社 Semiconductor wafer processing method and plasma etching apparatus
US7060989B2 (en) 2004-03-19 2006-06-13 Epion Corporation Method and apparatus for improved processing with a gas-cluster ion beam
JP4926067B2 (en) 2004-10-25 2012-05-09 ティーイーエル エピオン インク． Ionizer and method for gas cluster ion beam formation
US7550748B2 (en) * 2007-03-30 2009-06-23 Tel Epion, Inc. Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam
US7550749B2 (en) * 2007-03-30 2009-06-23 Tel Epion Inc. Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool
US7626183B2 (en) 2007-09-05 2009-12-01 Tel Epion Inc. Methods for modifying features of a workpiece using a gas cluster ion beam
US8293126B2 (en) * 2007-09-28 2012-10-23 Tel Epion Inc. Method and system for multi-pass correction of substrate defects
US8313663B2 (en) * 2008-09-24 2012-11-20 Tel Epion Inc. Surface profile adjustment using gas cluster ion beam processing
US8304033B2 (en) 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
US8097860B2 (en) 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating

Also Published As

Publication number Publication date
WO2015126534A1 (en) 2015-08-27
JP2021012882A (en) 2021-02-04
TWI585808B (en) 2017-06-01
US20150243476A1 (en) 2015-08-27
DE112015000899T5 (en) 2016-11-24
US9123505B1 (en) 2015-09-01
TW201539519A (en) 2015-10-16
JP7013539B2 (en) 2022-01-31
JP7009060B2 (en) 2022-01-25
JP2017515296A (en) 2017-06-08

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