SG11201606392UA - High mobility strained channels for fin-based nmos transistors - Google Patents
High mobility strained channels for fin-based nmos transistorsInfo
- Publication number
- SG11201606392UA SG11201606392UA SG11201606392UA SG11201606392UA SG11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA
- Authority
- SG
- Singapore
- Prior art keywords
- fin
- nmos transistors
- high mobility
- strained channels
- based nmos
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2014/032039 WO2015147836A1 (en) | 2014-03-27 | 2014-03-27 | High mobility strained channels for fin-based nmos transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606392UA true SG11201606392UA (en) | 2016-09-29 |
Family
ID=54196153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606392UA SG11201606392UA (en) | 2014-03-27 | 2014-03-27 | High mobility strained channels for fin-based nmos transistors |
Country Status (7)
Country | Link |
---|---|
US (3) | US10153372B2 (en) |
EP (1) | EP3123518A4 (en) |
KR (2) | KR102201112B1 (en) |
CN (1) | CN106030818B (en) |
SG (1) | SG11201606392UA (en) |
TW (1) | TWI637508B (en) |
WO (1) | WO2015147836A1 (en) |
Families Citing this family (21)
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WO2015147836A1 (en) | 2014-03-27 | 2015-10-01 | Intel Corporation | High mobility strained channels for fin-based nmos transistors |
US10269968B2 (en) * | 2015-06-03 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including fin structures and manufacturing method thereof |
US10361219B2 (en) * | 2015-06-30 | 2019-07-23 | International Business Machines Corporation | Implementing a hybrid finFET device and nanowire device utilizing selective SGOI |
US9859430B2 (en) * | 2015-06-30 | 2018-01-02 | International Business Machines Corporation | Local germanium condensation for suspended nanowire and finFET devices |
US9905649B2 (en) * | 2016-02-08 | 2018-02-27 | International Business Machines Corporation | Tensile strained nFET and compressively strained pFET formed on strain relaxed buffer |
CN107104144B (en) * | 2016-02-22 | 2019-12-27 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and method for manufacturing the same |
US20170250268A1 (en) * | 2016-02-25 | 2017-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor and method for fabricating the same |
US9917154B2 (en) | 2016-06-29 | 2018-03-13 | International Business Machines Corporation | Strained and unstrained semiconductor device features formed on the same substrate |
TWI624064B (en) * | 2016-08-29 | 2018-05-11 | 雋佾科技有限公司 | Wavy fet structure |
US11088033B2 (en) * | 2016-09-08 | 2021-08-10 | International Business Machines Corporation | Low resistance source-drain contacts using high temperature silicides |
US11011635B2 (en) * | 2016-12-12 | 2021-05-18 | Applied Materials, Inc. | Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device |
US10340384B2 (en) * | 2017-11-30 | 2019-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing fin field-effect transistor device |
CN110047926B (en) | 2018-01-15 | 2023-08-29 | 联华电子股份有限公司 | Semiconductor device and method for manufacturing the same |
US10665770B2 (en) * | 2018-03-06 | 2020-05-26 | Intel Corporation | Fin strain in quantum dot devices |
US11054748B2 (en) | 2018-09-21 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy insertion for improving throughput of electron beam lithography |
US11094597B2 (en) | 2018-09-28 | 2021-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with fin structures |
CN109671779B (en) * | 2018-11-22 | 2022-05-10 | 长江存储科技有限责任公司 | Semiconductor device and forming method thereof |
US11569231B2 (en) | 2019-03-15 | 2023-01-31 | Intel Corporation | Non-planar transistors with channel regions having varying widths |
US11670551B2 (en) | 2019-09-26 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interface trap charge density reduction |
US11670723B2 (en) * | 2020-05-12 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon channel tempering |
US20230095191A1 (en) * | 2021-09-24 | 2023-03-30 | Intel Corporation | Transistors with reduced epitaxial source/drain span via etch-back for improved cell scaling |
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US6475869B1 (en) | 2001-02-26 | 2002-11-05 | Advanced Micro Devices, Inc. | Method of forming a double gate transistor having an epitaxial silicon/germanium channel region |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
US20060003309A1 (en) | 2004-07-02 | 2006-01-05 | Akin James W | Method of frozen donor egg banking |
KR100618852B1 (en) * | 2004-07-27 | 2006-09-01 | 삼성전자주식회사 | Semiconductor device having high operating current |
US7348284B2 (en) * | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
JP5167816B2 (en) | 2005-10-21 | 2013-03-21 | 富士通株式会社 | Fin-type semiconductor device and manufacturing method thereof |
US8017463B2 (en) | 2006-12-29 | 2011-09-13 | Intel Corporation | Expitaxial fabrication of fins for FinFET devices |
US7897994B2 (en) | 2007-06-18 | 2011-03-01 | Texas Instruments Incorporated | Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate |
US20090001415A1 (en) | 2007-06-30 | 2009-01-01 | Nick Lindert | Multi-gate transistor with strained body |
US20090152589A1 (en) * | 2007-12-17 | 2009-06-18 | Titash Rakshit | Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors |
CN101853882B (en) | 2009-04-01 | 2016-03-23 | 台湾积体电路制造股份有限公司 | There is the high-mobility multiple-gate transistor of the switch current ratio of improvement |
CN102439702B (en) * | 2009-09-16 | 2014-11-12 | 株式会社东芝 | Semiconductor device and method for manufacturing same |
US8310013B2 (en) | 2010-02-11 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a FinFET device |
US8368146B2 (en) | 2010-06-15 | 2013-02-05 | International Business Machines Corporation | FinFET devices |
KR101222488B1 (en) | 2010-06-29 | 2013-01-16 | 한국기계연구원 | Method and flexible face for inorganic el display |
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US8349692B2 (en) | 2011-03-08 | 2013-01-08 | Globalfoundries Singapore Pte. Ltd. | Channel surface technique for fabrication of FinFET devices |
US9761666B2 (en) * | 2011-06-16 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel field effect transistor |
CN104011841B (en) * | 2011-12-21 | 2018-01-26 | 英特尔公司 | For the method for the fin for forming metal oxide semiconductor device structure |
US8729634B2 (en) | 2012-06-15 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with high mobility and strain channel |
US8847281B2 (en) * | 2012-07-27 | 2014-09-30 | Intel Corporation | High mobility strained channels for fin-based transistors |
US8501607B1 (en) | 2012-11-07 | 2013-08-06 | Globalfoundries Inc. | FinFET alignment structures using a double trench flow |
US20140264488A1 (en) * | 2013-03-15 | 2014-09-18 | Globalfoundries Inc. | Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices |
US20160190319A1 (en) * | 2013-09-27 | 2016-06-30 | Intel Corporation | Non-Planar Semiconductor Devices having Multi-Layered Compliant Substrates |
US9530777B2 (en) * | 2014-03-04 | 2016-12-27 | Stmicroelectronics, Inc. | FinFETs of different compositions formed on a same substrate |
WO2015147836A1 (en) | 2014-03-27 | 2015-10-01 | Intel Corporation | High mobility strained channels for fin-based nmos transistors |
-
2014
- 2014-03-27 WO PCT/US2014/032039 patent/WO2015147836A1/en active Application Filing
- 2014-03-27 KR KR1020167023170A patent/KR102201112B1/en active IP Right Grant
- 2014-03-27 KR KR1020217000231A patent/KR20210005324A/en not_active Application Discontinuation
- 2014-03-27 SG SG11201606392UA patent/SG11201606392UA/en unknown
- 2014-03-27 CN CN201480076490.1A patent/CN106030818B/en active Active
- 2014-03-27 EP EP14887192.4A patent/EP3123518A4/en active Pending
- 2014-03-27 US US15/117,590 patent/US10153372B2/en active Active
-
2015
- 2015-02-09 TW TW104104231A patent/TWI637508B/en active
-
2018
- 2018-12-10 US US16/214,946 patent/US10854752B2/en active Active
-
2020
- 2020-08-20 US US16/998,382 patent/US20200381549A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN106030818A (en) | 2016-10-12 |
KR20160136296A (en) | 2016-11-29 |
WO2015147836A1 (en) | 2015-10-01 |
US20190115466A1 (en) | 2019-04-18 |
EP3123518A1 (en) | 2017-02-01 |
TWI637508B (en) | 2018-10-01 |
CN106030818B (en) | 2020-09-01 |
US20200381549A1 (en) | 2020-12-03 |
EP3123518A4 (en) | 2017-11-22 |
KR20210005324A (en) | 2021-01-13 |
US20160351701A1 (en) | 2016-12-01 |
US10854752B2 (en) | 2020-12-01 |
US10153372B2 (en) | 2018-12-11 |
KR102201112B1 (en) | 2021-01-12 |
TW201543667A (en) | 2015-11-16 |
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