SG11201604064RA - Sealing thermosetting-resin sheet and hollow-package manufacturing method - Google Patents
Sealing thermosetting-resin sheet and hollow-package manufacturing methodInfo
- Publication number
- SG11201604064RA SG11201604064RA SG11201604064RA SG11201604064RA SG11201604064RA SG 11201604064R A SG11201604064R A SG 11201604064RA SG 11201604064R A SG11201604064R A SG 11201604064RA SG 11201604064R A SG11201604064R A SG 11201604064RA SG 11201604064R A SG11201604064R A SG 11201604064RA
- Authority
- SG
- Singapore
- Prior art keywords
- hollow
- resin sheet
- package manufacturing
- sealing thermosetting
- thermosetting
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81205—Ultrasonic bonding
- H01L2224/81207—Thermosonic bonding
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013246332 | 2013-11-28 | ||
JP2013246348 | 2013-11-28 | ||
JP2013246340 | 2013-11-28 | ||
JP2014038388 | 2014-02-28 | ||
PCT/JP2014/079535 WO2015079887A1 (en) | 2013-11-28 | 2014-11-07 | Sealing thermosetting-resin sheet and hollow-package manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201604064RA true SG11201604064RA (en) | 2016-07-28 |
Family
ID=53198835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201604064RA SG11201604064RA (en) | 2013-11-28 | 2014-11-07 | Sealing thermosetting-resin sheet and hollow-package manufacturing method |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6431340B2 (en) |
CN (1) | CN105917462B (en) |
SG (1) | SG11201604064RA (en) |
TW (1) | TW201522591A (en) |
WO (1) | WO2015079887A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6180159B2 (en) * | 2013-04-04 | 2017-08-16 | デクセリアルズ株式会社 | Anisotropic conductive film, connection method, and joined body |
CN108476589B (en) * | 2016-01-13 | 2021-10-26 | 太阳油墨制造株式会社 | Dry film and printed circuit board |
CN110546232B (en) * | 2017-04-28 | 2022-05-31 | 昭和电工材料株式会社 | Sealing film, sealing structure, and method for producing sealing structure |
EP3690932A4 (en) | 2017-09-29 | 2021-02-17 | Nagase ChemteX Corporation | Method for producing mounting structure, and sheet used in same |
EP3706164A4 (en) * | 2017-10-31 | 2021-08-11 | Nagase ChemteX Corporation | Method for producing package structure and sheet used in same |
JP6718106B2 (en) * | 2017-12-14 | 2020-07-08 | ナガセケムテックス株式会社 | Manufacturing method of mounting structure |
JP6997654B2 (en) * | 2018-03-08 | 2022-01-17 | 日東電工株式会社 | Sealing sheet |
JP7268970B2 (en) * | 2018-07-03 | 2023-05-08 | 日東電工株式会社 | Sealing sheet and method for producing electronic element device |
JP7166091B2 (en) * | 2018-07-03 | 2022-11-07 | 日東電工株式会社 | Sealing sheet and method for producing electronic element device |
JP2020098861A (en) * | 2018-12-18 | 2020-06-25 | 日東電工株式会社 | Adhesive film, adhesive film with dicing tape, and semiconductor device manufacturing method |
WO2021010207A1 (en) * | 2019-07-12 | 2021-01-21 | 日東電工株式会社 | Resin sheet for sealing |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08120054A (en) * | 1994-10-27 | 1996-05-14 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing and semiconductor device |
JPH1050899A (en) * | 1996-08-06 | 1998-02-20 | Nitto Denko Corp | Semiconductor device |
JP5035580B2 (en) * | 2001-06-28 | 2012-09-26 | ナガセケムテックス株式会社 | Surface acoustic wave device and manufacturing method thereof |
JP4225162B2 (en) * | 2003-08-18 | 2009-02-18 | 日立化成工業株式会社 | Sealing film |
US8138580B2 (en) * | 2007-09-19 | 2012-03-20 | Toray Industries, Inc. | Adhesive composition for electronic components, and adhesive sheet for electronic components using the same |
WO2014013697A1 (en) * | 2012-07-16 | 2014-01-23 | 株式会社デンソー | Electronic device and method for manufacturing same |
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2014
- 2014-11-07 CN CN201480065277.0A patent/CN105917462B/en active Active
- 2014-11-07 WO PCT/JP2014/079535 patent/WO2015079887A1/en active Application Filing
- 2014-11-07 SG SG11201604064RA patent/SG11201604064RA/en unknown
- 2014-11-07 JP JP2014227124A patent/JP6431340B2/en active Active
- 2014-11-07 TW TW103138715A patent/TW201522591A/en unknown
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TW201522591A (en) | 2015-06-16 |
CN105917462A (en) | 2016-08-31 |
JP6431340B2 (en) | 2018-11-28 |
WO2015079887A1 (en) | 2015-06-04 |
JP2015179814A (en) | 2015-10-08 |
CN105917462B (en) | 2019-10-15 |
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