SG11201601454WA - Beam delivery apparatus and method - Google Patents

Beam delivery apparatus and method

Info

Publication number
SG11201601454WA
SG11201601454WA SG11201601454WA SG11201601454WA SG11201601454WA SG 11201601454W A SG11201601454W A SG 11201601454WA SG 11201601454W A SG11201601454W A SG 11201601454WA SG 11201601454W A SG11201601454W A SG 11201601454WA SG 11201601454W A SG11201601454W A SG 11201601454WA
Authority
SG
Singapore
Prior art keywords
delivery apparatus
beam delivery
delivery
Prior art date
Application number
SG11201601454WA
Inventor
Vadim Banine
Petrus Bartraij
Gorkom Ramon Van
Lucas Ament
Jager Pieter De
Vries Gosse De
Rilpho Donker
Wouter Engelen
Olav Frijns
Leonardus Grimminck
Andelko Katalenic
Erik Loopstra
Han-Kwang Nienhuys
Andrey Nikipelov
Michael Renkens
Franciscus Janssen
Borgert Kruizinga
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP14151497.6A external-priority patent/EP2896995A1/en
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG11201601454WA publication Critical patent/SG11201601454WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1086—Beam splitting or combining systems operating by diffraction only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/12—Beam splitting or combining systems operating by refraction only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/142—Coating structures, e.g. thin films multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/145—Beam splitting or combining systems operating by reflection only having sequential partially reflecting surfaces
    • G02B27/146—Beam splitting or combining systems operating by reflection only having sequential partially reflecting surfaces with a tree or branched structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4272—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having plural diffractive elements positioned sequentially along the optical path
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
    • G02B5/1823—Plural gratings positioned on the same surface, e.g. array of gratings in an overlapping or superposed manner
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/0903—Free-electron laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/04—Magnet systems, e.g. undulators, wigglers; Energisation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/065—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements provided with cooling means
SG11201601454WA 2013-09-25 2014-09-24 Beam delivery apparatus and method SG11201601454WA (en)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US201361882336P 2013-09-25 2013-09-25
US201361897046P 2013-10-29 2013-10-29
US201361905053P 2013-11-15 2013-11-15
EP13199009 2013-12-20
EP14151497.6A EP2896995A1 (en) 2014-01-16 2014-01-16 A radiation source
EP14152443 2014-01-24
EP14155980 2014-02-20
EP14165675 2014-04-23
EP14171050 2014-06-04
EP14171051 2014-06-04
EP14172951 2014-06-18
EP14173446 2014-06-23
PCT/EP2014/070335 WO2015044182A2 (en) 2013-09-25 2014-09-24 Beam delivery apparatus and method

Publications (1)

Publication Number Publication Date
SG11201601454WA true SG11201601454WA (en) 2016-03-30

Family

ID=52744625

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201601454WA SG11201601454WA (en) 2013-09-25 2014-09-24 Beam delivery apparatus and method

Country Status (10)

Country Link
US (1) US10580545B2 (en)
EP (1) EP3049870B1 (en)
JP (1) JP6571092B2 (en)
KR (1) KR102275466B1 (en)
CN (2) CN110083019B (en)
IL (1) IL244344B (en)
NL (1) NL2013518A (en)
SG (1) SG11201601454WA (en)
TW (2) TWI711896B (en)
WO (1) WO2015044182A2 (en)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11000705B2 (en) * 2010-04-16 2021-05-11 W. Davis Lee Relativistic energy compensating cancer therapy apparatus and method of use thereof
DE102013223935A1 (en) 2013-11-22 2015-05-28 Carl Zeiss Smt Gmbh Illumination system for EUV exposure lithography
US10338362B1 (en) * 2014-06-06 2019-07-02 J.A. Woollam Co., Inc. Beam focusing and reflecting optics with enhanced detector system
US10018815B1 (en) * 2014-06-06 2018-07-10 J.A. Woolam Co., Inc. Beam focusing and reflective optics
TWI728951B (en) * 2014-07-31 2021-06-01 德商卡爾蔡司Ｓｍｔ有限公司 Illumination apparatus for a projection exposure system
TWI701517B (en) * 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 Optical component
WO2016134892A2 (en) * 2015-02-26 2016-09-01 Asml Netherlands B.V. Radiation beam apparatus
WO2016155979A1 (en) * 2015-04-03 2016-10-06 Asml Netherlands B.V. Reflective optical element
CN107624170B (en) * 2015-05-07 2020-10-13 Asml荷兰有限公司 Measuring device and method
JP6612559B2 (en) * 2015-08-31 2019-11-27 株式会社東芝 Free electron laser light source, control method thereof, and control program thereof
JP6762355B2 (en) 2015-09-03 2020-09-30 エーエスエムエル ネザーランズ ビー．ブイ． Beam splitting device
DE102015012053A1 (en) * 2015-09-14 2017-03-16 M+W Group GmbH Manufacturing plant for the production of integrated circuits from semiconductor wafers and waffle element for a manufacturing plant
US20230296853A9 (en) 2015-10-08 2023-09-21 Teramount Ltd. Optical Coupling
CA3003766C (en) * 2015-11-06 2024-02-20 Asml Netherlands B.V. Radioisotope production system using an electron beam splitter
DE102015225537B4 (en) * 2015-12-17 2019-11-14 Carl Zeiss Smt Gmbh Device for aligning a component, actuating device and projection exposure device
WO2017108311A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. A lithographic system and method
WO2017108348A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Free electron laser
US10524344B2 (en) * 2016-05-13 2019-12-31 University Of Maryland, College Park Laser-driven high repetition rate source of ultrashort relativistic electron bunches
CN108155110B (en) * 2016-12-05 2019-12-31 上海新昇半导体科技有限公司 Wafer surface flatness measuring system
DE102016224113A1 (en) 2016-12-05 2018-06-07 Carl Zeiss Smt Gmbh INTENSITY ADJUSTMENT FILTER FOR EUV - MICROLITHOGRAPHY AND METHOD FOR THE PRODUCTION THEREOF AND LIGHTING SYSTEM WITH A CORRESPONDING FILTER
WO2018122176A1 (en) * 2016-12-30 2018-07-05 Asml Netherlands B.V. An apparatus using multiple charged particle beams
PL3364421T3 (en) * 2017-02-17 2019-08-30 Rigaku Corporation X-ray optical device
DE102017205548A1 (en) * 2017-03-31 2018-10-04 Carl Zeiss Smt Gmbh Optical assembly for guiding an output beam of a free-electron laser
NL2020353A (en) * 2017-04-11 2018-10-17 Asml Netherlands Bv Lithographic apparatus
JPWO2018198227A1 (en) * 2017-04-26 2020-05-14 ギガフォトン株式会社 EUV light generator
US10245448B2 (en) 2017-07-21 2019-04-02 Varian Medical Systems Particle Therapy Gmbh Particle beam monitoring systems and methods
US10843011B2 (en) * 2017-07-21 2020-11-24 Varian Medical Systems, Inc. Particle beam gun control systems and methods
US10183179B1 (en) 2017-07-21 2019-01-22 Varian Medical Systems, Inc. Triggered treatment systems and methods
US10609806B2 (en) 2017-07-21 2020-03-31 Varian Medical Systems Particle Therapy Gmbh Energy modulation of a cyclotron beam
DE102017216893A1 (en) * 2017-09-25 2019-03-28 Carl Zeiss Smt Gmbh Imaging optics for imaging an object field in an image field
WO2019105664A1 (en) * 2017-11-29 2019-06-06 Asml Netherlands B.V. Laser beam monitoring system
KR102374206B1 (en) 2017-12-05 2022-03-14 삼성전자주식회사 Method of fabricating semiconductor device
US10340114B1 (en) * 2018-01-19 2019-07-02 Kla-Tencor Corporation Method of eliminating thermally induced beam drift in an electron beam separator
US10923875B2 (en) * 2018-02-06 2021-02-16 Lumentum Operations Llc Integrated component for an optical amplifier
KR20210006346A (en) * 2018-04-24 2021-01-18 에이에스엠엘 네델란즈 비.브이. Reflective optical elements for radiation beams
DE102018212224A1 (en) * 2018-07-23 2020-01-23 Carl Zeiss Smt Gmbh Device for feeding back emitted radiation into a laser source
EP3637436A1 (en) * 2018-10-12 2020-04-15 ASML Netherlands B.V. Enrichment and radioisotope production
CN109489564B (en) * 2018-12-29 2023-07-28 东莞市兆丰精密仪器有限公司 Image measuring instrument with automatic anti-collision function and anti-collision method thereof
CN109637678B (en) * 2019-02-18 2024-01-02 中国人民解放军国防科技大学 Graphene heat conduction-based double-cooling fusion reactor first wall part
WO2021083487A1 (en) * 2019-10-28 2021-05-06 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Laser system and method for driving a laser system
KR102300306B1 (en) * 2020-11-26 2021-09-10 주식회사 이온메디칼 Device for the generation and transport of spectral line radiation
WO2022174991A1 (en) * 2021-02-17 2022-08-25 Asml Netherlands B.V. Assembly for separating radiation in the far field
US11796917B2 (en) * 2021-05-07 2023-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Width adjustment of EUV radiation beam
US11933722B2 (en) * 2022-05-09 2024-03-19 Calumino Pty Ltd. Micro mirror arrays for measuring electromagnetic radiation
CN115345208B (en) * 2022-10-19 2023-02-03 成都理工大学 Neutron-gamma pulse accumulation discrimination method based on top-hat conversion

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204101A (en) 1962-09-04 1965-08-31 Lockheed Aircraft Corp Infrared spectrometer for target detection and tracking
DE1303819C2 (en) 1964-05-29 1973-07-12 DEVICE FOR MEASURING A COATING THICKNESS ON SURFACES
US5557347A (en) * 1986-11-04 1996-09-17 The Charles Stark Draper Laboratory, Inc. Ballistic missile boresight and inertial tracking system and method
US4778263A (en) * 1987-05-29 1988-10-18 The United States Of America As Respresented By The Department Of Energy Variable laser attenuator
DE3818129C2 (en) 1988-05-27 2003-04-10 Lambda Physik Ag Device for limiting laser beams
US4999839A (en) 1989-07-03 1991-03-12 Deacon Research Amplifier-oscillator free electron laser
NL8903013A (en) 1989-11-02 1991-06-03 Philips Nv GRID OBJECTIVE AND GRID BUNDLE CONVERTER AND OPTICAL SCANNER EQUIPPED WITH AT LEAST ONE OF THESE ELEMENTS.
US5222112A (en) 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
JP3022014B2 (en) 1992-01-17 2000-03-15 三菱電機株式会社 Light transmission type vacuum separation window and soft X-ray transmission window
JPH05234857A (en) 1992-02-24 1993-09-10 Hitachi Ltd Synchrotron radiation light irradiating apparatus
JP3311126B2 (en) 1993-12-20 2002-08-05 キヤノン株式会社 Mirror unit and exposure apparatus having the mirror unit
JPH07272670A (en) 1994-03-29 1995-10-20 Ebara Corp Vacuum pump and its discharging method
EP0823073B1 (en) * 1996-02-23 2001-04-11 Asm Lithography B.V. Illumination unit for an optical apparatus
US5736709A (en) 1996-08-12 1998-04-07 Armco Inc. Descaling metal with a laser having a very short pulse width and high average power
JPH1092717A (en) * 1996-09-11 1998-04-10 Nikon Corp Scanning aligner
KR100512450B1 (en) * 1996-12-24 2006-01-27 에이에스엠엘 네델란즈 비.브이. Two-dimensionally stabilized positioning device with two object holders and lithographic device with such positioning device
WO1999003012A1 (en) * 1997-07-08 1999-01-21 Etec Systems, Inc. Anamorphic scan lens for laser scanner
JPH1184098A (en) * 1997-07-11 1999-03-26 Canon Inc X-ray-lighting device and method, x-ray projection aligner, and device-manufacturing method
US5867239A (en) * 1997-10-17 1999-02-02 Minnesota Mining And Manufacturing Company Wide angle optical retarder
US6331710B1 (en) * 1998-12-02 2001-12-18 Zhijiang Wang Reflective optical systems for EUV lithography
US6563567B1 (en) 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
US6398374B1 (en) * 1998-12-31 2002-06-04 The Regents Of The University Of California Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography
JP2000260684A (en) * 1999-03-08 2000-09-22 Nikon Corp Aligner and illuminating system
US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
JP2001004931A (en) 1999-06-21 2001-01-12 Sony Corp Video projecting device
WO2001082001A1 (en) 2000-04-26 2001-11-01 Advanced Micro Devices, Inc. Lithography system with device for exposing the periphery of a wafer
JP2001313435A (en) * 2000-04-28 2001-11-09 Kawasaki Heavy Ind Ltd Free electron laser facility
TWI226972B (en) * 2000-06-01 2005-01-21 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1223468B1 (en) * 2001-01-10 2008-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
JP2002299221A (en) * 2001-04-02 2002-10-11 Canon Inc X-ray aligner
US7053988B2 (en) 2001-05-22 2006-05-30 Carl Zeiss Smt Ag. Optically polarizing retardation arrangement, and microlithography projection exposure machine
US6879374B2 (en) * 2001-06-20 2005-04-12 Asml Netherlands B.V. Device manufacturing method, device manufactured thereby and a mask for use in the method
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
DE10139177A1 (en) 2001-08-16 2003-02-27 Zeiss Carl Objective with pupil obscuration
EP1324138A3 (en) * 2001-12-28 2007-12-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1324136A1 (en) 2001-12-28 2003-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
WO2003077011A1 (en) * 2002-03-14 2003-09-18 Carl Zeiss Smt Ag Optical system with birefringent optical elements
EP1347271B1 (en) 2002-03-18 2012-01-11 Mitutoyo Corporation Optical displacement sensing device with reduced sensitivity to misalignment
US7053999B2 (en) 2002-03-21 2006-05-30 Applied Materials, Inc. Method and system for detecting defects
JP2003303751A (en) 2002-04-05 2003-10-24 Canon Inc Projection-type optical system, exposure apparatus having projection-type optical system and exposure method
AU2003227607A1 (en) * 2002-04-11 2003-10-20 Heidelberg Instruments Mikrotechnik Gmbh Method and device for imaging a mask onto a substrate
US6842293B1 (en) 2002-04-13 2005-01-11 Yusong Yin Beam expander
US20030219094A1 (en) * 2002-05-21 2003-11-27 Basting Dirk L. Excimer or molecular fluorine laser system with multiple discharge units
US6880942B2 (en) * 2002-06-20 2005-04-19 Nikon Corporation Adaptive optic with discrete actuators for continuous deformation of a deformable mirror system
US6840638B2 (en) * 2002-07-03 2005-01-11 Nikon Corporation Deformable mirror with passive and active actuators
US6825988B2 (en) * 2002-09-04 2004-11-30 Intel Corporation Etched silicon diffraction gratings for use as EUV spectral purity filters
TWI295413B (en) 2002-11-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and method to determine beam size and divergence.
EP1469347A1 (en) 2003-04-17 2004-10-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10351714B4 (en) 2003-11-05 2005-09-29 Eads Astrium Gmbh Device for optically detecting a distant object
DE10358225B3 (en) 2003-12-12 2005-06-30 Forschungszentrum Karlsruhe Gmbh Undulator and method for its operation
DE102004013886A1 (en) 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Multiple Exposure Method, Microlithography Projection Exposure System and Projection System
US7145640B2 (en) 2004-03-22 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and variable attenuator
JP4332460B2 (en) * 2004-04-02 2009-09-16 キヤノン株式会社 Illumination optical system and exposure apparatus having the illumination optical system
US20060001890A1 (en) 2004-07-02 2006-01-05 Asml Holding N.V. Spatial light modulator as source module for DUV wavefront sensor
FR2877104B1 (en) * 2004-10-27 2006-12-29 Sagem IMAGING OR INSULATION DEVICE, IN PARTICULAR FOR CARRYING OUT AN ELECTRON MICRO CIRCUIT
US7361911B2 (en) 2004-12-09 2008-04-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193229B2 (en) * 2004-12-28 2007-03-20 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for mitigating debris particles
ATE430369T1 (en) 2005-11-02 2009-05-15 Univ Dublin MIRROR FOR HIGH POWER EUV LAMP SYSTEM
US20070152171A1 (en) 2005-12-30 2007-07-05 Michael Goldstein Free electron laser
WO2007122856A1 (en) 2006-04-24 2007-11-01 Nikon Corporation Apparatus for cooling optical element, and exposure apparatus
JP2007317713A (en) * 2006-05-23 2007-12-06 Canon Inc Optical element driving device
DE102006039655A1 (en) * 2006-08-24 2008-03-20 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure apparatus, projection exposure apparatus with such an illumination system, method for producing a microstructured component with such a projection exposure apparatus and microstructured component produced by this method
US7683300B2 (en) 2006-10-17 2010-03-23 Asml Netherlands B.V. Using an interferometer as a high speed variable attenuator
US7916274B2 (en) * 2006-10-27 2011-03-29 Nikon Corporation Measurement of EUV intensity
DE102006056052B4 (en) 2006-11-28 2009-04-16 Forschungszentrum Karlsruhe Gmbh Planar-helical undulator
US8116342B2 (en) 2007-03-26 2012-02-14 Nikon Corporation Variable attenuator device and method
KR101393912B1 (en) 2007-08-20 2014-05-12 칼 짜이스 에스엠티 게엠베하 Projection objective having mirror elements with reflective coatings
US7812329B2 (en) 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
JP5205035B2 (en) * 2007-11-14 2013-06-05 株式会社東芝 Light beam branching device, irradiation device, light beam branching method, electronic device manufacturing method, and precision component manufacturing method
US20090218521A1 (en) * 2008-02-08 2009-09-03 Nikon Corporation Gaseous neutral density filters and related methods
JP5339742B2 (en) 2008-03-04 2013-11-13 ウシオ電機株式会社 Connection device between a device that emits extreme ultraviolet light and a device that introduces extreme ultraviolet light
DE102008000967B4 (en) * 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projection exposure machine for EUV microlithography
KR20110005704A (en) 2008-04-09 2011-01-18 가부시키가이샤 니콘 Light source device, exposure device and manufacturing method
DE102008031650B4 (en) 2008-07-04 2010-04-29 Xtreme Technologies Gmbh Arrangement for debris suppression in a plasma-based radiation source for generating short-wave radiation
KR101008065B1 (en) 2008-09-08 2011-01-13 고병모 Radiaton pressure vacuum pump
JP5368261B2 (en) 2008-11-06 2013-12-18 ギガフォトン株式会社 Extreme ultraviolet light source device, control method of extreme ultraviolet light source device
NL2003588A (en) * 2008-12-15 2010-06-16 Asml Holding Nv Reticle inspection systems and method.
JP2010199562A (en) 2009-02-25 2010-09-09 Nikon Corp Projection optical system, projection method, exposure apparatus, and method of manufacturing device
DE102009010537B4 (en) * 2009-02-25 2018-03-01 Carl Zeiss Smart Optics Gmbh Beam combiner and use of such in a display device
JP5360379B2 (en) 2009-02-25 2013-12-04 株式会社ニコン Projection optical system, exposure apparatus, and device manufacturing method
US8066382B2 (en) 2009-07-14 2011-11-29 Eastman Kodak Company Stereoscopic projector with rotating segmented disk
JP2013053850A (en) 2010-01-07 2013-03-21 Saitama Medical Univ Circularly polarized light conversion device
JP5644779B2 (en) * 2010-02-02 2014-12-24 株式会社ニコン Exposure method, exposure apparatus, pattern forming method, and device manufacturing method
JP5758153B2 (en) 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． Radiation source apparatus, lithographic apparatus, radiation generation and delivery method, and device manufacturing method
DE102010028994A1 (en) 2010-05-14 2011-11-17 Helmholtz-Zentrum Dresden - Rossendorf E.V. Generation of short-wave ultrashort light pulses and their use
DE102011079933A1 (en) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optical element for UV or EUV lithography
NL2007615A (en) * 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
JP5806479B2 (en) 2011-02-22 2015-11-10 キヤノン株式会社 Illumination optical system, exposure apparatus, and device manufacturing method
DE102011005881A1 (en) 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Method for adjusting projection exposure system's illumination system during manufacturing e.g. nanostructure electronic semiconductor component, involves displacing correction elements so that actual variation matches with target variation
DE102011086328A1 (en) 2011-11-15 2013-05-16 Carl Zeiss Smt Gmbh Mirror used to guide illumination and imaging light in EUV projection lithography
DE102012214063A1 (en) 2012-08-08 2014-02-13 Carl Zeiss Smt Gmbh Illumination system for a projection exposure apparatus for EUV projection lithography
JP6374493B2 (en) 2013-06-18 2018-08-15 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic method

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