SG11201600129XA - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
SG11201600129XA
SG11201600129XA SG11201600129XA SG11201600129XA SG11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA
Authority
SG
Singapore
Prior art keywords
plasma processing
processing apparatus
processing method
plasma
processing
Prior art date
Application number
SG11201600129XA
Other languages
English (en)
Inventor
Koji Maruyama
Masato Horiguchi
Tetsuri Matsuki
Akira Koshiishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201600129XA publication Critical patent/SG11201600129XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
SG11201600129XA 2013-08-09 2014-07-03 Plasma processing apparatus and plasma processing method SG11201600129XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013166908 2013-08-09
PCT/JP2014/067844 WO2015019765A1 (ja) 2013-08-09 2014-07-03 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
SG11201600129XA true SG11201600129XA (en) 2016-02-26

Family

ID=52461104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600129XA SG11201600129XA (en) 2013-08-09 2014-07-03 Plasma processing apparatus and plasma processing method

Country Status (8)

Country Link
US (1) US9685305B2 (ja)
EP (1) EP3032925B1 (ja)
JP (1) JP6169701B2 (ja)
KR (1) KR101809150B1 (ja)
CN (1) CN105379428B (ja)
SG (1) SG11201600129XA (ja)
TW (1) TWI645443B (ja)
WO (1) WO2015019765A1 (ja)

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US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
JP6516542B2 (ja) * 2015-04-20 2019-05-22 東京エレクトロン株式会社 被エッチング層をエッチングする方法
KR102549308B1 (ko) * 2016-03-29 2023-06-30 도쿄엘렉트론가부시키가이샤 에칭 장치
JP6784530B2 (ja) * 2016-03-29 2020-11-11 東京エレクトロン株式会社 被処理体を処理する方法
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
US9644271B1 (en) * 2016-05-13 2017-05-09 Lam Research Corporation Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
EP3468309B1 (en) * 2016-05-27 2020-10-21 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation device
US11217434B2 (en) * 2016-12-27 2022-01-04 Evatec Ag RF capacitive coupled dual frequency etch reactor
CN106653660B (zh) * 2017-01-25 2019-08-20 重庆京东方光电科技有限公司 一种气体流量控制装置及等离子体刻蚀设备
KR102578539B1 (ko) * 2017-07-28 2023-09-13 스미토모덴키고교가부시키가이샤 샤워 헤드 및 그 제조 방법
KR102443036B1 (ko) * 2018-01-15 2022-09-14 삼성전자주식회사 플라즈마 처리 장치
KR102376127B1 (ko) * 2018-05-30 2022-03-18 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
JP7194937B2 (ja) * 2018-12-06 2022-12-23 東京エレクトロン株式会社 プラズマ処理装置、及び、プラズマ処理方法
JP7190948B2 (ja) 2019-03-22 2022-12-16 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN112017936B (zh) * 2019-05-28 2024-05-31 东京毅力科创株式会社 等离子体处理装置
WO2021095120A1 (ja) * 2019-11-12 2021-05-20 東芝三菱電機産業システム株式会社 活性ガス生成装置
US11839014B2 (en) 2019-11-27 2023-12-05 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generating apparatus

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JPH07226395A (ja) 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
JPH08279495A (ja) * 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
JP2001230208A (ja) * 2000-02-16 2001-08-24 Komatsu Ltd 表面処理装置
JP4212215B2 (ja) * 2000-03-24 2009-01-21 株式会社小松製作所 表面処理装置
US6875366B2 (en) 2000-09-12 2005-04-05 Hitachi, Ltd. Plasma processing apparatus and method with controlled biasing functions
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JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
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JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
KR100978859B1 (ko) 2008-07-11 2010-08-31 피에스케이 주식회사 할로우 캐소드 플라즈마 발생장치 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리장치
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Also Published As

Publication number Publication date
WO2015019765A1 (ja) 2015-02-12
EP3032925A4 (en) 2017-03-22
TW201511077A (zh) 2015-03-16
US9685305B2 (en) 2017-06-20
KR101809150B1 (ko) 2017-12-14
JPWO2015019765A1 (ja) 2017-03-02
EP3032925B1 (en) 2020-05-13
TWI645443B (zh) 2018-12-21
CN105379428B (zh) 2017-07-04
JP6169701B2 (ja) 2017-07-26
KR20160040512A (ko) 2016-04-14
EP3032925A1 (en) 2016-06-15
US20160163515A1 (en) 2016-06-09
CN105379428A (zh) 2016-03-02

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