SG11201600129XA - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
SG11201600129XA
SG11201600129XA SG11201600129XA SG11201600129XA SG11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA
Authority
SG
Singapore
Prior art keywords
plasma processing
processing apparatus
processing method
plasma
processing
Prior art date
Application number
SG11201600129XA
Other languages
English (en)
Inventor
Koji Maruyama
Masato Horiguchi
Tetsuri Matsuki
Akira Koshiishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201600129XA publication Critical patent/SG11201600129XA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422Arrangement for selecting ions or species in the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
SG11201600129XA 2013-08-09 2014-07-03 Plasma processing apparatus and plasma processing method SG11201600129XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013166908 2013-08-09
PCT/JP2014/067844 WO2015019765A1 (ja) 2013-08-09 2014-07-03 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
SG11201600129XA true SG11201600129XA (en) 2016-02-26

Family

ID=52461104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600129XA SG11201600129XA (en) 2013-08-09 2014-07-03 Plasma processing apparatus and plasma processing method

Country Status (8)

Country Link
US (1) US9685305B2 (ja)
EP (1) EP3032925B1 (ja)
JP (1) JP6169701B2 (ja)
KR (1) KR101809150B1 (ja)
CN (1) CN105379428B (ja)
SG (1) SG11201600129XA (ja)
TW (1) TWI645443B (ja)
WO (1) WO2015019765A1 (ja)

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US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
JP6516542B2 (ja) * 2015-04-20 2019-05-22 東京エレクトロン株式会社 被エッチング層をエッチングする方法
KR102362282B1 (ko) 2016-03-29 2022-02-11 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
JP6784530B2 (ja) 2016-03-29 2020-11-11 東京エレクトロン株式会社 被処理体を処理する方法
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
US9644271B1 (en) * 2016-05-13 2017-05-09 Lam Research Corporation Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
WO2017203674A1 (ja) * 2016-05-27 2017-11-30 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2018121896A1 (en) * 2016-12-27 2018-07-05 Evatec Ag Rf capacitive coupled dual frequency etch reactor
CN106653660B (zh) * 2017-01-25 2019-08-20 重庆京东方光电科技有限公司 一种气体流量控制装置及等离子体刻蚀设备
JP7052796B2 (ja) * 2017-07-28 2022-04-12 住友電気工業株式会社 シャワーヘッド及びその製造方法
KR102443036B1 (ko) * 2018-01-15 2022-09-14 삼성전자주식회사 플라즈마 처리 장치
JP6851706B2 (ja) * 2018-05-30 2021-03-31 東芝三菱電機産業システム株式会社 活性ガス生成装置
JP7194937B2 (ja) * 2018-12-06 2022-12-23 東京エレクトロン株式会社 プラズマ処理装置、及び、プラズマ処理方法
JP7190948B2 (ja) * 2019-03-22 2022-12-16 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN112017936B (zh) * 2019-05-28 2024-05-31 东京毅力科创株式会社 等离子体处理装置
JP6873588B1 (ja) * 2019-11-12 2021-05-19 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR102524433B1 (ko) 2019-11-27 2023-04-24 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치

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US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
JPH07226395A (ja) 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
JPH08279495A (ja) * 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
JP2001230208A (ja) * 2000-02-16 2001-08-24 Komatsu Ltd 表面処理装置
JP4212215B2 (ja) 2000-03-24 2009-01-21 株式会社小松製作所 表面処理装置
US6875366B2 (en) 2000-09-12 2005-04-05 Hitachi, Ltd. Plasma processing apparatus and method with controlled biasing functions
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
KR20140012200A (ko) * 2008-01-04 2014-01-29 인터디지탈 패튼 홀딩스, 인크 Hspa에서 wtru 상태 이행을 수행하기 위한 방법 및 장치
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
KR100978859B1 (ko) 2008-07-11 2010-08-31 피에스케이 주식회사 할로우 캐소드 플라즈마 발생장치 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리장치
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JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP5328685B2 (ja) * 2010-01-28 2013-10-30 三菱電機株式会社 プラズマ処理装置及びプラズマ処理方法
JP5916056B2 (ja) * 2010-08-23 2016-05-11 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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Also Published As

Publication number Publication date
EP3032925B1 (en) 2020-05-13
CN105379428B (zh) 2017-07-04
EP3032925A1 (en) 2016-06-15
JPWO2015019765A1 (ja) 2017-03-02
TWI645443B (zh) 2018-12-21
US9685305B2 (en) 2017-06-20
TW201511077A (zh) 2015-03-16
JP6169701B2 (ja) 2017-07-26
KR101809150B1 (ko) 2017-12-14
WO2015019765A1 (ja) 2015-02-12
EP3032925A4 (en) 2017-03-22
US20160163515A1 (en) 2016-06-09
CN105379428A (zh) 2016-03-02
KR20160040512A (ko) 2016-04-14

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