SG11201504374YA - Epitaxial wafer and a method of manufacturing thereof - Google Patents

Epitaxial wafer and a method of manufacturing thereof

Info

Publication number
SG11201504374YA
SG11201504374YA SG11201504374YA SG11201504374YA SG11201504374YA SG 11201504374Y A SG11201504374Y A SG 11201504374YA SG 11201504374Y A SG11201504374Y A SG 11201504374YA SG 11201504374Y A SG11201504374Y A SG 11201504374YA SG 11201504374Y A SG11201504374Y A SG 11201504374YA
Authority
SG
Singapore
Prior art keywords
manufacturing
epitaxial wafer
epitaxial
wafer
Prior art date
Application number
SG11201504374YA
Inventor
Peter Storck
Norbert Werner
Martin Vorderwestner
Peter Tolchinsky
Irwin Yablok
Original Assignee
Siltronic Ag
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag, Intel Corp filed Critical Siltronic Ag
Publication of SG11201504374YA publication Critical patent/SG11201504374YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
SG11201504374YA 2012-12-06 2013-12-03 Epitaxial wafer and a method of manufacturing thereof SG11201504374YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261733977P 2012-12-06 2012-12-06
PCT/EP2013/075313 WO2014086742A1 (en) 2012-12-06 2013-12-03 Epitaxial wafer and a method of manufacturing thereof

Publications (1)

Publication Number Publication Date
SG11201504374YA true SG11201504374YA (en) 2015-07-30

Family

ID=49681050

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504374YA SG11201504374YA (en) 2012-12-06 2013-12-03 Epitaxial wafer and a method of manufacturing thereof

Country Status (8)

Country Link
US (1) US9691632B2 (en)
EP (1) EP2959500B1 (en)
JP (1) JP6341928B2 (en)
KR (1) KR101709026B1 (en)
CN (1) CN104838474B (en)
SG (1) SG11201504374YA (en)
TW (1) TWI541864B (en)
WO (1) WO2014086742A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6032186B2 (en) * 2013-11-29 2016-11-24 信越半導体株式会社 Evaluation method of silicon epitaxial wafer
TWI725220B (en) * 2016-08-12 2021-04-21 美商因普利亞公司 Methods of reducing metal residue in edge bead region from metal-containing resists
JP6299835B1 (en) * 2016-10-07 2018-03-28 株式会社Sumco Epitaxial silicon wafer and method of manufacturing epitaxial silicon wafer
EP4044216A1 (en) 2021-02-16 2022-08-17 Siltronic AG Method for testing the stress robustness of a semiconductor substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246297A (en) * 1984-05-17 1985-12-05 Shin Etsu Handotai Co Ltd Preparation of nitrogen-doped silicon single crystal
JPS61125012A (en) 1984-11-21 1986-06-12 Toshiba Corp Epitaxial wafer
IT1216212B (en) * 1986-10-29 1990-02-22 S G S Microelettrica S P A EPITAXIAL LAYERS WITH HOW MANY TA 'CONTROLLED OF NITROGEN GROWN ON SILICON SUBSTRATES
JP4084902B2 (en) * 1998-05-01 2008-04-30 シルトロニック・ジャパン株式会社 Silicon semiconductor substrate and manufacturing method thereof
WO1999057344A1 (en) 1998-05-01 1999-11-11 Nippon Steel Corporation Silicon semiconductor wafer and method for producing the same
US6274442B1 (en) * 1998-07-15 2001-08-14 Advanced Micro Devices, Inc. Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same
US7468311B2 (en) 2003-09-30 2008-12-23 Tokyo Electron Limited Deposition of silicon-containing films from hexachlorodisilane
KR100632463B1 (en) 2005-02-07 2006-10-11 삼성전자주식회사 Fabrication method of epitaxial semiconductor substrate, fabrication method of image sensor using the same, epitaxial semiconductor substrate and image sensor using the same
US7391058B2 (en) * 2005-06-27 2008-06-24 General Electric Company Semiconductor devices and methods of making same
JP4779519B2 (en) * 2005-09-08 2011-09-28 株式会社Ｓｕｍｃｏ Epitaxial wafer manufacturing method
JP2009200231A (en) 2008-02-21 2009-09-03 Sumco Corp Epitaxial wafer and method of manufacturing the same
JP2009212354A (en) 2008-03-05 2009-09-17 Sumco Corp Method of manufacturing silicon substrate
JP2010141272A (en) 2008-12-15 2010-06-24 Sumco Corp Epitaxial wafer and its production method
JP2011253978A (en) 2010-06-03 2011-12-15 Sumco Corp Epitaxial substrate and its manufacturing method

Also Published As

Publication number Publication date
US9691632B2 (en) 2017-06-27
JP2016500475A (en) 2016-01-12
CN104838474A (en) 2015-08-12
US20150303071A1 (en) 2015-10-22
CN104838474B (en) 2018-04-27
TW201423843A (en) 2014-06-16
EP2959500B1 (en) 2019-02-27
WO2014086742A1 (en) 2014-06-12
JP6341928B2 (en) 2018-06-13
KR20150066590A (en) 2015-06-16
TWI541864B (en) 2016-07-11
KR101709026B1 (en) 2017-02-21
EP2959500A1 (en) 2015-12-30

Similar Documents

Publication Publication Date Title
EP2741317A4 (en) Epitaxial wafer manufacturing device and manufacturing method
EP2755228A4 (en) Sic epitaxial wafer and method for manufacturing same
EP2709149A4 (en) Semiconductor device and manufacturing method thereof
EP2804214A4 (en) Semiconductor device and method of manufacturing thereof
TWI562366B (en) Manufacturing method of semiconductor device
EP2688102A4 (en) Semiconductor device and manufacturing method therefor
EP2790216A4 (en) Semiconductor device and semiconductor device manufacturing method
EP2750198A4 (en) SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
EP2820173A4 (en) Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
EP2927947A4 (en) Placement member and method for manufacturing same
EP2856379A4 (en) A semiconductor device and a method of manufacturing a semiconductor device
EP2819152A4 (en) Semiconductor element and method for manufacturing semiconductor element
EP2709148A4 (en) Semiconductor device and manufacturing method thereof
SG10201503189QA (en) Semiconductor wafer and manufacturing method thereof
GB2488587B (en) Semiconductor devices and fabrication methods
GB2487917B (en) Semiconductor devices and fabrication methods
EP2685511A4 (en) Semiconductor light-emitting element and method of manufacturing thereof
EP2804216A4 (en) Semiconductor device and method of manufacturing thereof
EP2725619A4 (en) Semiconductor device and method of manufacturing same
EP2775515A4 (en) Semiconductor device and manufacturing method thereof
EP2741316A4 (en) Epitaxial wafer manufacturing device and manufacturing method
SG11201408564SA (en) Semiconductor wafer evaluation method and semiconductor wafer manufacturing method
EP2748840A4 (en) A semiconductor substrate and method of manufacturing
AP4048A (en) Method of manufacturing a launder and launder
GB2478602B (en) A semiconductor device and method of manufacturing a semiconductor device