SG11201503219VA - Apparatuses and methods for memory operations having variable latencies - Google Patents

Apparatuses and methods for memory operations having variable latencies

Info

Publication number
SG11201503219VA
SG11201503219VA SG11201503219VA SG11201503219VA SG11201503219VA SG 11201503219V A SG11201503219V A SG 11201503219VA SG 11201503219V A SG11201503219V A SG 11201503219VA SG 11201503219V A SG11201503219V A SG 11201503219VA SG 11201503219V A SG11201503219V A SG 11201503219VA
Authority
SG
Singapore
Prior art keywords
apparatuses
methods
memory operations
variable latencies
latencies
Prior art date
Application number
SG11201503219VA
Inventor
Graziano Mirichigni
Corrado Villa
Luca Porzio
Chee Weng Tan
Sebastien Lemarie
Andre Klindworth
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201503219VA publication Critical patent/SG11201503219VA/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
    • G06F9/30003—Arrangements for executing specific machine instructions
    • G06F9/3004—Arrangements for executing specific machine instructions to perform operations on memory
    • G06F9/30047—Prefetch instructions; cache control instructions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1689—Synchronisation and timing concerns
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2272—Latency related aspects
SG11201503219VA 2012-10-26 2013-10-25 Apparatuses and methods for memory operations having variable latencies SG11201503219VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261719321P 2012-10-26 2012-10-26
US13/840,929 US9740485B2 (en) 2012-10-26 2013-03-15 Apparatuses and methods for memory operations having variable latencies
PCT/US2013/066947 WO2014066843A1 (en) 2012-10-26 2013-10-25 Apparatuses and methods for memory operations having variable latencies

Publications (1)

Publication Number Publication Date
SG11201503219VA true SG11201503219VA (en) 2015-05-28

Family

ID=50545361

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503219VA SG11201503219VA (en) 2012-10-26 2013-10-25 Apparatuses and methods for memory operations having variable latencies

Country Status (7)

Country Link
US (3) US9740485B2 (en)
EP (1) EP2912557B1 (en)
JP (1) JP5952974B2 (en)
KR (1) KR101693131B1 (en)
CN (1) CN105339916B (en)
SG (1) SG11201503219VA (en)
WO (1) WO2014066843A1 (en)

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Also Published As

Publication number Publication date
US20170308382A1 (en) 2017-10-26
CN105339916B (en) 2019-05-17
EP2912557A4 (en) 2016-10-05
US9740485B2 (en) 2017-08-22
US10915321B2 (en) 2021-02-09
KR20160009523A (en) 2016-01-26
CN105339916A (en) 2016-02-17
WO2014066843A1 (en) 2014-05-01
EP2912557A1 (en) 2015-09-02
JP5952974B2 (en) 2016-07-13
US20140122814A1 (en) 2014-05-01
US20190012173A1 (en) 2019-01-10
JP2015533005A (en) 2015-11-16
KR101693131B1 (en) 2017-01-04
US10067764B2 (en) 2018-09-04
EP2912557B1 (en) 2020-08-26

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