SG11201407234QA - Compact ampoule thermal management system - Google Patents
Compact ampoule thermal management systemInfo
- Publication number
- SG11201407234QA SG11201407234QA SG11201407234QA SG11201407234QA SG11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA
- Authority
- SG
- Singapore
- Prior art keywords
- california
- lllll
- international
- thermal management
- llll
- Prior art date
Links
- 239000003708 ampul Substances 0.000 title abstract 2
- 239000002243 precursor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 241000219492 Quercus Species 0.000 abstract 1
- 101150071725 SMDT1 gene Proteins 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Control Of Temperature (AREA)
- Packages (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261655767P | 2012-06-05 | 2012-06-05 | |
US13/902,304 US9347696B2 (en) | 2012-06-05 | 2013-05-24 | Compact ampoule thermal management system |
US13/902,310 US9279604B2 (en) | 2012-06-05 | 2013-05-24 | Compact ampoule thermal management system |
PCT/US2013/044256 WO2013184760A1 (en) | 2012-06-05 | 2013-06-05 | Compact ampoule thermal management system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201407234QA true SG11201407234QA (en) | 2014-12-30 |
Family
ID=49668610
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201702767UA SG10201702767UA (en) | 2012-06-05 | 2013-06-05 | Compact ampoule thermal management system |
SG11201407234QA SG11201407234QA (en) | 2012-06-05 | 2013-06-05 | Compact ampoule thermal management system |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201702767UA SG10201702767UA (en) | 2012-06-05 | 2013-06-05 | Compact ampoule thermal management system |
Country Status (6)
Country | Link |
---|---|
US (2) | US9279604B2 (zh) |
KR (2) | KR101727442B1 (zh) |
CN (1) | CN104335326B (zh) |
SG (2) | SG10201702767UA (zh) |
TW (2) | TWI579933B (zh) |
WO (1) | WO2013184760A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI726944B (zh) * | 2015-12-06 | 2021-05-11 | 美商應用材料股份有限公司 | 用於封閉金屬容器的連續液體位準量測偵測器 |
US10619243B2 (en) * | 2016-07-22 | 2020-04-14 | Triratna P. Muneshwar | Method to improve precursor utilization in pulsed atomic layer processes |
KR102517907B1 (ko) * | 2016-12-12 | 2023-04-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 전구체 제어 시스템 및 프로세스 |
CN110313056B (zh) * | 2017-01-17 | 2024-02-20 | 莱尔德技术股份有限公司 | 可压缩发泡热界面材料及其制备方法和使用方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5954911A (en) * | 1995-10-12 | 1999-09-21 | Semitool, Inc. | Semiconductor processing using vapor mixtures |
JPH11225490A (ja) * | 1997-12-05 | 1999-08-17 | Seiko Instruments Inc | 熱電変換モジュール及び電子機器 |
US20040261703A1 (en) | 2003-06-27 | 2004-12-30 | Jeffrey D. Chinn | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
US7261118B2 (en) | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
GB2424358B (en) * | 2005-03-23 | 2008-07-30 | David Anthony Alfille | Temperature-controlled container for foodstuffs |
US7939422B2 (en) * | 2006-12-07 | 2011-05-10 | Applied Materials, Inc. | Methods of thin film process |
KR100862760B1 (ko) * | 2007-04-12 | 2008-10-13 | 에스케이 텔레콤주식회사 | 이동통신망을 이용한 이력 기반 서비스 방법 및 그시스템과 이를 위한 이동통신 단말기 |
KR100862720B1 (ko) | 2007-07-31 | 2008-10-10 | 포아텍 주식회사 | 화학 용액 용기 온도 조절 장치 및 이를 이용한포토레지스트 도포 장치 |
US20090084112A1 (en) * | 2007-10-02 | 2009-04-02 | Demetrius Calvin Ham | Thermoelectric vehicle engine air cooler |
KR101502415B1 (ko) | 2008-09-12 | 2015-03-13 | 엠 에스피 코포레이션 | 액체 전구물질 분무 방법 및 장치 |
US20100186423A1 (en) * | 2009-01-23 | 2010-07-29 | Prince Castle Inc. | Hot or cold food receptacle utilizing a peltier device with air flow temperature control |
KR101072471B1 (ko) | 2009-05-19 | 2011-10-12 | 주식회사 마이크로이즈 | 전구체 공급장치 및 이를 포함하는 박막증착시스템 |
KR101132972B1 (ko) * | 2009-12-29 | 2012-04-09 | (주)한동알앤씨 | 방열구조 엘이디 등기구 |
-
2013
- 2013-05-24 US US13/902,310 patent/US9279604B2/en not_active Expired - Fee Related
- 2013-05-24 US US13/902,304 patent/US9347696B2/en not_active Expired - Fee Related
- 2013-05-30 TW TW105123607A patent/TWI579933B/zh active
- 2013-05-30 TW TW102119156A patent/TWI563575B/zh active
- 2013-06-05 SG SG10201702767UA patent/SG10201702767UA/en unknown
- 2013-06-05 CN CN201380029684.1A patent/CN104335326B/zh active Active
- 2013-06-05 KR KR1020167021711A patent/KR101727442B1/ko active IP Right Grant
- 2013-06-05 KR KR1020147036453A patent/KR101700494B1/ko active IP Right Grant
- 2013-06-05 WO PCT/US2013/044256 patent/WO2013184760A1/en active Application Filing
- 2013-06-05 SG SG11201407234QA patent/SG11201407234QA/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20150023495A (ko) | 2015-03-05 |
KR20160098533A (ko) | 2016-08-18 |
US9347696B2 (en) | 2016-05-24 |
US20130319013A1 (en) | 2013-12-05 |
CN104335326B (zh) | 2017-06-30 |
WO2013184760A1 (en) | 2013-12-12 |
US9279604B2 (en) | 2016-03-08 |
US20130319015A1 (en) | 2013-12-05 |
TW201411737A (zh) | 2014-03-16 |
TWI579933B (zh) | 2017-04-21 |
SG10201702767UA (en) | 2017-05-30 |
TWI563575B (en) | 2016-12-21 |
KR101700494B1 (ko) | 2017-01-26 |
KR101727442B1 (ko) | 2017-04-14 |
CN104335326A (zh) | 2015-02-04 |
TW201705312A (zh) | 2017-02-01 |
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