SG11201407234QA - Compact ampoule thermal management system - Google Patents

Compact ampoule thermal management system

Info

Publication number
SG11201407234QA
SG11201407234QA SG11201407234QA SG11201407234QA SG11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA SG 11201407234Q A SG11201407234Q A SG 11201407234QA
Authority
SG
Singapore
Prior art keywords
california
lllll
international
thermal management
llll
Prior art date
Application number
SG11201407234QA
Other languages
English (en)
Inventor
David K Carlson
Errol Antonio C Sanchez
Kenric Choi
Marcel E Josephson
Dennis Demars
Emre Cuvalci
Mehmet Tugrul Samir
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201407234QA publication Critical patent/SG11201407234QA/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Control Of Temperature (AREA)
  • Packages (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
SG11201407234QA 2012-06-05 2013-06-05 Compact ampoule thermal management system SG11201407234QA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261655767P 2012-06-05 2012-06-05
US13/902,310 US9279604B2 (en) 2012-06-05 2013-05-24 Compact ampoule thermal management system
US13/902,304 US9347696B2 (en) 2012-06-05 2013-05-24 Compact ampoule thermal management system
PCT/US2013/044256 WO2013184760A1 (en) 2012-06-05 2013-06-05 Compact ampoule thermal management system

Publications (1)

Publication Number Publication Date
SG11201407234QA true SG11201407234QA (en) 2014-12-30

Family

ID=49668610

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201702767UA SG10201702767UA (en) 2012-06-05 2013-06-05 Compact ampoule thermal management system
SG11201407234QA SG11201407234QA (en) 2012-06-05 2013-06-05 Compact ampoule thermal management system

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201702767UA SG10201702767UA (en) 2012-06-05 2013-06-05 Compact ampoule thermal management system

Country Status (6)

Country Link
US (2) US9279604B2 (zh)
KR (2) KR101727442B1 (zh)
CN (1) CN104335326B (zh)
SG (2) SG10201702767UA (zh)
TW (2) TWI579933B (zh)
WO (1) WO2013184760A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726944B (zh) * 2015-12-06 2021-05-11 美商應用材料股份有限公司 用於封閉金屬容器的連續液體位準量測偵測器
US10619243B2 (en) * 2016-07-22 2020-04-14 Triratna P. Muneshwar Method to improve precursor utilization in pulsed atomic layer processes
WO2018111720A1 (en) 2016-12-12 2018-06-21 Applied Materials, Inc. Precursor control system and process
CN110313056B (zh) * 2017-01-17 2024-02-20 莱尔德技术股份有限公司 可压缩发泡热界面材料及其制备方法和使用方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
JPH11225490A (ja) * 1997-12-05 1999-08-17 Seiko Instruments Inc 熱電変換モジュール及び電子機器
US20040261703A1 (en) 2003-06-27 2004-12-30 Jeffrey D. Chinn Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US7261118B2 (en) 2003-08-19 2007-08-28 Air Products And Chemicals, Inc. Method and vessel for the delivery of precursor materials
GB2424358B (en) * 2005-03-23 2008-07-30 David Anthony Alfille Temperature-controlled container for foodstuffs
US7939422B2 (en) * 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
KR100862760B1 (ko) * 2007-04-12 2008-10-13 에스케이 텔레콤주식회사 이동통신망을 이용한 이력 기반 서비스 방법 및 그시스템과 이를 위한 이동통신 단말기
KR100862720B1 (ko) 2007-07-31 2008-10-10 포아텍 주식회사 화학 용액 용기 온도 조절 장치 및 이를 이용한포토레지스트 도포 장치
US20090084112A1 (en) * 2007-10-02 2009-04-02 Demetrius Calvin Ham Thermoelectric vehicle engine air cooler
KR101502415B1 (ko) 2008-09-12 2015-03-13 엠 에스피 코포레이션 액체 전구물질 분무 방법 및 장치
US20100186423A1 (en) * 2009-01-23 2010-07-29 Prince Castle Inc. Hot or cold food receptacle utilizing a peltier device with air flow temperature control
KR101072471B1 (ko) 2009-05-19 2011-10-12 주식회사 마이크로이즈 전구체 공급장치 및 이를 포함하는 박막증착시스템
KR101132972B1 (ko) * 2009-12-29 2012-04-09 (주)한동알앤씨 방열구조 엘이디 등기구

Also Published As

Publication number Publication date
US20130319013A1 (en) 2013-12-05
CN104335326A (zh) 2015-02-04
SG10201702767UA (en) 2017-05-30
TW201411737A (zh) 2014-03-16
US9279604B2 (en) 2016-03-08
TW201705312A (zh) 2017-02-01
TWI563575B (en) 2016-12-21
US20130319015A1 (en) 2013-12-05
US9347696B2 (en) 2016-05-24
CN104335326B (zh) 2017-06-30
KR101700494B1 (ko) 2017-01-26
TWI579933B (zh) 2017-04-21
KR101727442B1 (ko) 2017-04-14
KR20150023495A (ko) 2015-03-05
WO2013184760A1 (en) 2013-12-12
KR20160098533A (ko) 2016-08-18

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