SG11201405910SA - System for measuring a zone of separation in a substrate - Google Patents

System for measuring a zone of separation in a substrate

Info

Publication number
SG11201405910SA
SG11201405910SA SG11201405910SA SG11201405910SA SG11201405910SA SG 11201405910S A SG11201405910S A SG 11201405910SA SG 11201405910S A SG11201405910S A SG 11201405910SA SG 11201405910S A SG11201405910S A SG 11201405910SA SG 11201405910S A SG11201405910S A SG 11201405910SA
Authority
SG
Singapore
Prior art keywords
zone
separation
measuring
substrate
Prior art date
Application number
SG11201405910SA
Other languages
English (en)
Inventor
Frédéric Mazen
François Rieutord
Jean-Daniel Penot
Philippe Montmayeul
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of SG11201405910SA publication Critical patent/SG11201405910SA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P3/00Measuring linear or angular speed; Measuring differences of linear or angular speeds
    • G01P3/36Devices characterised by the use of optical means, e.g. using infrared, visible, or ultraviolet light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Electromagnetism (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
SG11201405910SA 2012-03-21 2013-03-12 System for measuring a zone of separation in a substrate SG11201405910SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1252507A FR2988474B1 (fr) 2012-03-21 2012-03-21 Systeme de mesure de la propagation d'une zone d'ecartement dans un substrat
PCT/FR2013/050517 WO2013140065A1 (fr) 2012-03-21 2013-03-12 Système de mesure d'une zone d'écartement dans un substrat

Publications (1)

Publication Number Publication Date
SG11201405910SA true SG11201405910SA (en) 2014-11-27

Family

ID=48083485

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405910SA SG11201405910SA (en) 2012-03-21 2013-03-12 System for measuring a zone of separation in a substrate

Country Status (8)

Country Link
US (1) US9201023B2 (zh)
EP (1) EP2828635B1 (zh)
JP (1) JP6047225B2 (zh)
KR (1) KR20140134308A (zh)
CN (1) CN104321633B (zh)
FR (1) FR2988474B1 (zh)
SG (1) SG11201405910SA (zh)
WO (1) WO2013140065A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3034172B1 (fr) 2015-03-25 2018-03-30 Ayrton Dispositif lumineux comprenant une base, un projecteur et un bras connecte entre ladite base et ledit projecteur
FR3055063B1 (fr) 2016-08-11 2018-08-31 Soitec Procede de transfert d'une couche utile
FR3132787A1 (fr) * 2022-02-14 2023-08-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de suivi de fragilisation d’une interface entre un substrat et une couche et dispositif permettant un tel suivi

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61149839A (ja) * 1984-12-24 1986-07-08 Fuji Electric Co Ltd 疲労試験装置
EP0356563A1 (de) * 1988-09-02 1990-03-07 Carl Schenck Ag Verfahren und Messvorrichtung zur Ermittlung von Risslängen und/oder von Dehnungen an Bauteilen, Proben oder dgl.
US5517861A (en) * 1994-10-11 1996-05-21 United Technologies Corporation High temperature crack monitoring apparatus
US6924898B2 (en) * 2000-08-08 2005-08-02 Zygo Corporation Phase-shifting interferometry method and system
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
US7142295B2 (en) * 2003-03-05 2006-11-28 Corning Incorporated Inspection of transparent substrates for defects
JP4878013B2 (ja) * 2007-08-27 2012-02-15 国立大学法人 東京大学 亀裂発生位置の検出方法
CN102768403A (zh) * 2011-05-03 2012-11-07 上海美沃精密仪器有限公司 一种微显裂隙系统和方法

Also Published As

Publication number Publication date
CN104321633A (zh) 2015-01-28
FR2988474A1 (fr) 2013-09-27
US9201023B2 (en) 2015-12-01
EP2828635A1 (fr) 2015-01-28
EP2828635B1 (fr) 2018-05-30
WO2013140065A1 (fr) 2013-09-26
FR2988474B1 (fr) 2015-02-06
JP6047225B2 (ja) 2016-12-21
JP2015512512A (ja) 2015-04-27
US20150055122A1 (en) 2015-02-26
KR20140134308A (ko) 2014-11-21
CN104321633B (zh) 2016-12-14

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