SG11201401963QA - Photosensitive resin composition, method for manufacturing patterned cured film, and electronic component - Google Patents
Photosensitive resin composition, method for manufacturing patterned cured film, and electronic componentInfo
- Publication number
- SG11201401963QA SG11201401963QA SG11201401963QA SG11201401963QA SG11201401963QA SG 11201401963Q A SG11201401963Q A SG 11201401963QA SG 11201401963Q A SG11201401963Q A SG 11201401963QA SG 11201401963Q A SG11201401963Q A SG 11201401963QA SG 11201401963Q A SG11201401963Q A SG 11201401963QA
- Authority
- SG
- Singapore
- Prior art keywords
- resin composition
- electronic component
- photosensitive resin
- cured film
- patterned cured
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011272307 | 2011-12-13 | ||
PCT/JP2012/078176 WO2013088852A1 (en) | 2011-12-13 | 2012-10-31 | Photosensitive resin composition, method for manufacturing patterned cured film, and electronic component |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201401963QA true SG11201401963QA (en) | 2014-09-26 |
Family
ID=48612309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201401963QA SG11201401963QA (en) | 2011-12-13 | 2012-10-31 | Photosensitive resin composition, method for manufacturing patterned cured film, and electronic component |
Country Status (6)
Country | Link |
---|---|
US (1) | US9395626B2 (en) |
EP (1) | EP2793082B1 (en) |
JP (1) | JP5904211B2 (en) |
SG (1) | SG11201401963QA (en) |
TW (1) | TWI472875B (en) |
WO (1) | WO2013088852A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6108869B2 (en) * | 2013-02-22 | 2017-04-05 | 旭化成株式会社 | Photosensitive resin composition, method for producing cured relief pattern, semiconductor device and display device |
JP6208959B2 (en) * | 2013-03-14 | 2017-10-04 | 旭化成株式会社 | Photosensitive resin composition, method for producing cured relief pattern, semiconductor device and display device |
JP6093437B2 (en) * | 2013-03-15 | 2017-03-08 | 富士フイルム株式会社 | Photosensitive resin composition, method for producing cured film, cured film, organic EL display device and liquid crystal display device |
CN108604059B (en) | 2016-02-05 | 2021-07-02 | 艾曲迪微系统股份有限公司 | Positive photosensitive resin composition |
CN115718406A (en) * | 2016-11-11 | 2023-02-28 | 住友电木株式会社 | Photosensitive resin composition for forming resist, resin film, cured film, and semiconductor device |
TWI707889B (en) * | 2017-08-01 | 2020-10-21 | 日商旭化成股份有限公司 | Semiconductor device and manufacturing method thereof |
CN108003271B (en) * | 2017-12-25 | 2020-06-16 | 广东三求光固材料股份有限公司 | Alkali-soluble electroplating-resistant photosensitive resin and preparation method and application thereof |
CN114730131A (en) | 2019-11-14 | 2022-07-08 | 默克专利股份有限公司 | Diazonaphthoquinone (DNQ) type photoresist composition containing alkali-soluble acrylic resin |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3960055B2 (en) | 2002-01-23 | 2007-08-15 | Jsr株式会社 | Photosensitive insulating resin composition and cured product thereof |
JP2008241798A (en) | 2007-03-26 | 2008-10-09 | Nippon Zeon Co Ltd | Method for forming resist pattern using new positive photosensitive resin composition |
KR101379057B1 (en) * | 2008-09-04 | 2014-03-28 | 히타치가세이가부시끼가이샤 | Positive-type photosensitive resin composition, method for producing resist pattern, and electronic component |
JP5446203B2 (en) * | 2008-10-15 | 2014-03-19 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive resin composition, method for producing patterned cured film using the resin composition, and electronic component |
EP2372457B1 (en) * | 2008-12-26 | 2014-11-26 | Hitachi Chemical Company, Ltd. | Positive-type photosensitive resin composition, method for producing resist pattern, semiconductor device, and electronic device |
JP5444813B2 (en) | 2009-04-23 | 2014-03-19 | Jsr株式会社 | Photosensitive insulating resin composition and insulating film |
JP2011075610A (en) | 2009-09-29 | 2011-04-14 | Nippon Zeon Co Ltd | Radiation sensitive resin composition and laminated body |
JP5657882B2 (en) | 2009-12-16 | 2015-01-21 | 旭化成イーマテリアルズ株式会社 | Photosensitive resin composition |
-
2012
- 2012-10-31 US US14/364,498 patent/US9395626B2/en active Active
- 2012-10-31 SG SG11201401963QA patent/SG11201401963QA/en unknown
- 2012-10-31 JP JP2013549157A patent/JP5904211B2/en active Active
- 2012-10-31 WO PCT/JP2012/078176 patent/WO2013088852A1/en active Application Filing
- 2012-10-31 EP EP12857412.6A patent/EP2793082B1/en active Active
- 2012-12-12 TW TW101146782A patent/TWI472875B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2793082A1 (en) | 2014-10-22 |
TW201329623A (en) | 2013-07-16 |
WO2013088852A1 (en) | 2013-06-20 |
EP2793082A4 (en) | 2015-10-28 |
TWI472875B (en) | 2015-02-11 |
EP2793082B1 (en) | 2019-12-18 |
US9395626B2 (en) | 2016-07-19 |
JPWO2013088852A1 (en) | 2015-04-27 |
US20140322635A1 (en) | 2014-10-30 |
JP5904211B2 (en) | 2016-04-13 |
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