SG11201401945WA - Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same - Google Patents

Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Info

Publication number
SG11201401945WA
SG11201401945WA SG11201401945WA SG11201401945WA SG11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA
Authority
SG
Singapore
Prior art keywords
crucible
manufacturing
production
same
crystalline semiconductor
Prior art date
Application number
SG11201401945WA
Other languages
English (en)
Inventor
Gilbert Rancoule
Christian Martin
Laurent Dubois
Original Assignee
Vesuvius France Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius France Sa filed Critical Vesuvius France Sa
Publication of SG11201401945WA publication Critical patent/SG11201401945WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
SG11201401945WA 2011-12-12 2012-12-11 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same SG11201401945WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11193086.3A EP2604728A1 (fr) 2011-12-12 2011-12-12 Creuset pour la production de lingots de semi-conducteurs cristallins et procédé de fabrication de ceux-ci
PCT/EP2012/075021 WO2013087598A1 (fr) 2011-12-12 2012-12-11 Creuset pour la production de lingots de semi-conducteurs cristallins et procédé de fabrication de ce dernier

Publications (1)

Publication Number Publication Date
SG11201401945WA true SG11201401945WA (en) 2014-09-26

Family

ID=47326175

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401945WA SG11201401945WA (en) 2011-12-12 2012-12-11 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Country Status (8)

Country Link
EP (2) EP2604728A1 (fr)
KR (1) KR20140101822A (fr)
CN (1) CN103987881A (fr)
ES (1) ES2596255T3 (fr)
SG (1) SG11201401945WA (fr)
TW (1) TWI555887B (fr)
UA (1) UA111753C2 (fr)
WO (1) WO2013087598A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102035297B1 (ko) * 2017-10-20 2019-10-22 한국생산기술연구원 파괴 인성이 개선된 각형 구조체와 제조 방법 및 각형 압력 탱크
CN109858145B (zh) * 2019-01-30 2023-08-04 金川集团股份有限公司 一种用于圆管相贯线加工的系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2175594B1 (fr) 1972-03-15 1974-09-13 Radiotechnique Compelec
JPH0428512A (ja) * 1990-05-24 1992-01-31 Toray Ind Inc カップ状繊維強化複合体の製造方法
US6423136B1 (en) * 2000-03-20 2002-07-23 Carl Francis Swinehart Crucible for growing macrocrystals
JP4777880B2 (ja) 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
US7344596B2 (en) 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
US20100089308A1 (en) * 2008-10-15 2010-04-15 Japan Super Quartz Corporation Silica glass crucible and method for pulling single-crystal silicon
JP2008088045A (ja) 2006-09-05 2008-04-17 Sumco Corp シリコン単結晶の製造方法およびシリコンウェーハの製造方法
FR2908125B1 (fr) 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
TW200846509A (en) * 2007-01-19 2008-12-01 Vesuvius Crucible Co Crucible and filling method for melting a non-ferrous product
US20110259262A1 (en) 2008-06-16 2011-10-27 Gt Solar, Inc. Systems and methods for growing monocrystalline silicon ingots by directional solidification
CN201506711U (zh) * 2009-09-30 2010-06-16 常州天合光能有限公司 铸锭用坩埚
JP5293615B2 (ja) 2010-01-08 2013-09-18 信越半導体株式会社 単結晶製造装置
JP5480036B2 (ja) 2010-03-03 2014-04-23 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
CN201678762U (zh) * 2010-03-05 2010-12-22 上海杰姆斯电子材料有限公司 一种直拉法制备单晶硅所使用的石墨坩埚

Also Published As

Publication number Publication date
CN103987881A (zh) 2014-08-13
UA111753C2 (uk) 2016-06-10
KR20140101822A (ko) 2014-08-20
TW201335447A (zh) 2013-09-01
EP2791398A1 (fr) 2014-10-22
WO2013087598A1 (fr) 2013-06-20
ES2596255T3 (es) 2017-01-05
EP2604728A1 (fr) 2013-06-19
EP2791398B1 (fr) 2016-07-13
TWI555887B (zh) 2016-11-01

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