SG11201400569UA - Multi junctions in a semiconductor device formed by different deposition techniques - Google Patents
Multi junctions in a semiconductor device formed by different deposition techniquesInfo
- Publication number
- SG11201400569UA SG11201400569UA SG11201400569UA SG11201400569UA SG11201400569UA SG 11201400569U A SG11201400569U A SG 11201400569UA SG 11201400569U A SG11201400569U A SG 11201400569UA SG 11201400569U A SG11201400569U A SG 11201400569UA SG 11201400569U A SG11201400569U A SG 11201400569UA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- device formed
- deposition techniques
- different deposition
- junctions
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1159154A FR2981195A1 (en) | 2011-10-11 | 2011-10-11 | MULTI-JUNCTION IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES |
PCT/IB2012/002062 WO2013054184A1 (en) | 2011-10-11 | 2012-10-08 | Multi junctions in a semiconductor device formed by different deposition techniques |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201400569UA true SG11201400569UA (en) | 2014-05-29 |
Family
ID=47080742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201400569UA SG11201400569UA (en) | 2011-10-11 | 2012-10-08 | Multi junctions in a semiconductor device formed by different deposition techniques |
Country Status (8)
Country | Link |
---|---|
US (1) | US10490688B2 (en) |
KR (1) | KR20140074338A (en) |
CN (1) | CN103843157B (en) |
DE (1) | DE112012004230T5 (en) |
FR (1) | FR2981195A1 (en) |
SG (1) | SG11201400569UA (en) |
TW (1) | TWI611464B (en) |
WO (1) | WO2013054184A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102751389A (en) * | 2012-07-19 | 2012-10-24 | 厦门市三安光电科技有限公司 | Preparation method of efficient multi-junction solar cell |
EP3103142B1 (en) | 2014-02-05 | 2020-08-19 | Array Photonics, Inc. | Monolithic multijunction power converter |
CN104659158A (en) * | 2015-03-16 | 2015-05-27 | 天津三安光电有限公司 | Inverted multi-junction solar cell and manufacturing method thereof |
WO2019010037A1 (en) * | 2017-07-06 | 2019-01-10 | Solar Junction Corporation | Hybrid mocvd/mbe epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
WO2019067553A1 (en) | 2017-09-27 | 2019-04-04 | Solar Junction Corporation | Short wavelength infrared optoelectronic devices having a dilute nitride layer |
US11211514B2 (en) | 2019-03-11 | 2021-12-28 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404421A (en) | 1982-02-26 | 1983-09-13 | Chevron Research Company | Ternary III-V multicolor solar cells and process of fabrication |
US4686323A (en) | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
JPH0656865B2 (en) | 1988-10-13 | 1994-07-27 | 株式会社東芝 | Adhesive substrate for high voltage devices |
FR2690279B1 (en) | 1992-04-15 | 1997-10-03 | Picogiga Sa | MULTISPECTRAL PHOTOVOLTAUIC COMPONENT. |
FR2690278A1 (en) | 1992-04-15 | 1993-10-22 | Picogiga Sa | Multispectral photovoltaic component with cell stack, and production method. |
US6130147A (en) | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
US5689123A (en) | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
US5853497A (en) | 1996-12-12 | 1998-12-29 | Hughes Electronics Corporation | High efficiency multi-junction solar cells |
US6281426B1 (en) | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
FR2777116A1 (en) * | 1998-04-03 | 1999-10-01 | Picogiga Sa | SEMICONDUCTOR STRUCTURE OF PHOTOVOLTAIC COMPONENT |
US6344608B2 (en) * | 1998-06-30 | 2002-02-05 | Canon Kabushiki Kaisha | Photovoltaic element |
US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
EP1065734B1 (en) | 1999-06-09 | 2009-05-13 | Kabushiki Kaisha Toshiba | Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof. |
US6316715B1 (en) * | 2000-03-15 | 2001-11-13 | The Boeing Company | Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material |
US7339109B2 (en) | 2000-06-20 | 2008-03-04 | Emcore Corporation | Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells |
WO2002043155A2 (en) | 2000-11-27 | 2002-05-30 | Kopin Corporation | Bipolar transistor with lattice matched base layer |
US6815736B2 (en) | 2001-02-09 | 2004-11-09 | Midwest Research Institute | Isoelectronic co-doping |
US7238622B2 (en) | 2001-04-17 | 2007-07-03 | California Institute Of Technology | Wafer bonded virtual substrate and method for forming the same |
US7019339B2 (en) | 2001-04-17 | 2006-03-28 | California Institute Of Technology | Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby |
US20050026432A1 (en) | 2001-04-17 | 2005-02-03 | Atwater Harry A. | Wafer bonded epitaxial templates for silicon heterostructures |
US6951819B2 (en) | 2002-12-05 | 2005-10-04 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
US20050161078A1 (en) | 2004-01-27 | 2005-07-28 | Daniel Aiken | Solar cell mechanical interconnection using direct wafer bonding |
WO2005104192A2 (en) | 2004-04-21 | 2005-11-03 | California Institute Of Technology | A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES |
US7807921B2 (en) | 2004-06-15 | 2010-10-05 | The Boeing Company | Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer |
US20060021565A1 (en) | 2004-07-30 | 2006-02-02 | Aonex Technologies, Inc. | GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
US7846759B2 (en) | 2004-10-21 | 2010-12-07 | Aonex Technologies, Inc. | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques |
US10374120B2 (en) | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
WO2007019277A2 (en) | 2005-08-03 | 2007-02-15 | California Institute Of Technology | Method of forming semiconductor layers on handle substrates |
US11211510B2 (en) | 2005-12-13 | 2021-12-28 | The Boeing Company | Multijunction solar cell with bonded transparent conductive interlayer |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
CA2692124A1 (en) | 2007-07-03 | 2009-01-08 | Microlink Devices, Inc. | Thin film iii-v compound solar cell |
WO2009009111A2 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY |
EP2151861A1 (en) | 2008-08-06 | 2010-02-10 | S.O.I. TEC Silicon | Passivation of etched semiconductor structures |
US8916769B2 (en) | 2008-10-01 | 2014-12-23 | International Business Machines Corporation | Tandem nanofilm interconnected semiconductor wafer solar cells |
US8101856B2 (en) | 2008-10-02 | 2012-01-24 | International Business Machines Corporation | Quantum well GaP/Si tandem photovoltaic cells |
KR100982993B1 (en) | 2008-10-14 | 2010-09-17 | 삼성엘이디 주식회사 | Surface treatment method of group Ⅲ nitride semiconductor, group Ⅲ nitride semiconductor and manufacturing method thereof, group Ⅲ nitride semiconductor structure |
US8236600B2 (en) | 2008-11-10 | 2012-08-07 | Emcore Solar Power, Inc. | Joining method for preparing an inverted metamorphic multijunction solar cell |
US20100122764A1 (en) | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
EP2356689A4 (en) | 2008-11-26 | 2013-11-20 | Microlink Devices Inc | Solar cell with a backside via to contact the emitter layer |
US7785989B2 (en) | 2008-12-17 | 2010-08-31 | Emcore Solar Power, Inc. | Growth substrates for inverted metamorphic multijunction solar cells |
AU2010208225B2 (en) | 2009-01-28 | 2015-11-05 | Microlink Devices, Inc. | High efficiency Group III-V compound semiconductor solar cell with oxidized window layer |
IT1394853B1 (en) * | 2009-07-21 | 2012-07-20 | Cesi Ct Elettrotecnico Sperimentale Italiano Giacinto Motta S P A | PHOTOVOLTAIC CELL WITH HIGH CONVERSION EFFICIENCY |
US8119904B2 (en) | 2009-07-31 | 2012-02-21 | International Business Machines Corporation | Silicon wafer based structure for heterostructure solar cells |
US8895838B1 (en) * | 2010-01-08 | 2014-11-25 | Magnolia Solar, Inc. | Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same |
US9303316B1 (en) * | 2010-01-15 | 2016-04-05 | Apollo Precision Kunming Yuanhong Limited | Continuous web apparatus and method using an air to vacuum seal and accumulator |
US20110232730A1 (en) * | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
US20110303268A1 (en) * | 2010-06-15 | 2011-12-15 | Tan Wei-Sin | HIGH EFFICIENCY InGaAsN SOLAR CELL AND METHOD OF MAKING |
CN101950774A (en) | 2010-08-17 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery |
US10170652B2 (en) * | 2011-03-22 | 2019-01-01 | The Boeing Company | Metamorphic solar cell having improved current generation |
CN102184980B (en) | 2011-04-02 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Wafer-bonding-based triple-junction solar cell and preparation method thereof |
US9818901B2 (en) | 2011-05-13 | 2017-11-14 | International Business Machines Corporation | Wafer bonded solar cells and fabrication methods |
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2011
- 2011-10-11 FR FR1159154A patent/FR2981195A1/en active Pending
-
2012
- 2012-08-29 TW TW101131382A patent/TWI611464B/en active
- 2012-10-08 KR KR1020147009324A patent/KR20140074338A/en not_active Application Discontinuation
- 2012-10-08 US US14/350,435 patent/US10490688B2/en active Active
- 2012-10-08 SG SG11201400569UA patent/SG11201400569UA/en unknown
- 2012-10-08 WO PCT/IB2012/002062 patent/WO2013054184A1/en active Application Filing
- 2012-10-08 DE DE112012004230.1T patent/DE112012004230T5/en active Pending
- 2012-10-08 CN CN201280048760.9A patent/CN103843157B/en active Active
Also Published As
Publication number | Publication date |
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KR20140074338A (en) | 2014-06-17 |
CN103843157A (en) | 2014-06-04 |
TW201316382A (en) | 2013-04-16 |
WO2013054184A1 (en) | 2013-04-18 |
DE112012004230T5 (en) | 2014-06-26 |
FR2981195A1 (en) | 2013-04-12 |
US10490688B2 (en) | 2019-11-26 |
US20140261653A1 (en) | 2014-09-18 |
TWI611464B (en) | 2018-01-11 |
CN103843157B (en) | 2017-10-27 |
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