SG11201400096PA - Discontinuous patterned bonds for semiconductor devices and associated systems and methods - Google Patents

Discontinuous patterned bonds for semiconductor devices and associated systems and methods

Info

Publication number
SG11201400096PA
SG11201400096PA SG11201400096PA SG11201400096PA SG11201400096PA SG 11201400096P A SG11201400096P A SG 11201400096PA SG 11201400096P A SG11201400096P A SG 11201400096PA SG 11201400096P A SG11201400096P A SG 11201400096PA SG 11201400096P A SG11201400096P A SG 11201400096PA
Authority
SG
Singapore
Prior art keywords
methods
semiconductor devices
associated systems
discontinuous patterned
bonds
Prior art date
Application number
SG11201400096PA
Inventor
Scott D Schellhammer
Vladimir Odnoblyudov
Jeremy S Frei
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201400096PA publication Critical patent/SG11201400096PA/en

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    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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    • H01L2924/12042—LASER

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Element Separation (AREA)
  • Pressure Sensors (AREA)
SG11201400096PA 2011-08-29 2012-08-14 Discontinuous patterned bonds for semiconductor devices and associated systems and methods SG11201400096PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/220,462 US8754424B2 (en) 2011-08-29 2011-08-29 Discontinuous patterned bonds for semiconductor devices and associated systems and methods
PCT/US2012/050768 WO2013032688A2 (en) 2011-08-29 2012-08-14 Discontinuous patterned bonds for semiconductor devices and associated systems and methods

Publications (1)

Publication Number Publication Date
SG11201400096PA true SG11201400096PA (en) 2014-03-28

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Application Number Title Priority Date Filing Date
SG11201400096PA SG11201400096PA (en) 2011-08-29 2012-08-14 Discontinuous patterned bonds for semiconductor devices and associated systems and methods

Country Status (8)

Country Link
US (7) US8754424B2 (en)
EP (1) EP2751831B1 (en)
JP (1) JP5964970B2 (en)
KR (1) KR101637105B1 (en)
CN (1) CN103765556B (en)
SG (1) SG11201400096PA (en)
TW (1) TWI497612B (en)
WO (1) WO2013032688A2 (en)

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