SG109480A1 - Acidic polishing slurry for the chemical-mechanical polishing of sio2 isolation layers - Google Patents

Acidic polishing slurry for the chemical-mechanical polishing of sio2 isolation layers

Info

Publication number
SG109480A1
SG109480A1 SG200107319A SG200107319A SG109480A1 SG 109480 A1 SG109480 A1 SG 109480A1 SG 200107319 A SG200107319 A SG 200107319A SG 200107319 A SG200107319 A SG 200107319A SG 109480 A1 SG109480 A1 SG 109480A1
Authority
SG
Singapore
Prior art keywords
chemical
polishing
acidic
isolation layers
polishing slurry
Prior art date
Application number
SG200107319A
Other languages
English (en)
Inventor
Vogt Kristina
Puppe Lothar
Min Chun-Kuo
Chen Li-Mei
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of SG109480A1 publication Critical patent/SG109480A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
SG200107319A 2000-12-20 2001-11-27 Acidic polishing slurry for the chemical-mechanical polishing of sio2 isolation layers SG109480A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10063491A DE10063491A1 (de) 2000-12-20 2000-12-20 Saure Polierslurry für das chemisch-mechanische Polieren von SiO¶2¶-Isolationsschichten

Publications (1)

Publication Number Publication Date
SG109480A1 true SG109480A1 (en) 2005-03-30

Family

ID=7667928

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200107319A SG109480A1 (en) 2000-12-20 2001-11-27 Acidic polishing slurry for the chemical-mechanical polishing of sio2 isolation layers

Country Status (9)

Country Link
US (2) US20020129560A1 (ko)
EP (1) EP1217651B1 (ko)
JP (1) JP2002261053A (ko)
KR (1) KR20020050161A (ko)
CN (1) CN1359998A (ko)
AT (1) ATE275289T1 (ko)
DE (2) DE10063491A1 (ko)
SG (1) SG109480A1 (ko)
TW (1) TW575645B (ko)

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US6350692B1 (en) * 2000-12-14 2002-02-26 Infineon Technologies Ag Increased polish removal rate of dielectric layers using fixed abrasive pads
WO2004001849A2 (en) * 2002-04-30 2003-12-31 Hrl Laboratories, Llc Quartz-based nanoresonators and method of fabricating same
KR100506056B1 (ko) * 2002-06-24 2005-08-05 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 조성물 및 이를 이용한 반도체소자의 형성 방법
US8766745B1 (en) 2007-07-25 2014-07-01 Hrl Laboratories, Llc Quartz-based disk resonator gyro with ultra-thin conductive outer electrodes and method of making same
US7994877B1 (en) 2008-11-10 2011-08-09 Hrl Laboratories, Llc MEMS-based quartz hybrid filters and a method of making the same
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
US7185695B1 (en) * 2005-09-01 2007-03-06 United Technologies Corporation Investment casting pattern manufacture
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US7555824B2 (en) 2006-08-09 2009-07-07 Hrl Laboratories, Llc Method for large scale integration of quartz-based devices
US7884930B2 (en) * 2007-06-14 2011-02-08 Hrl Laboratories, Llc Integrated quartz biological sensor and method
US20100020311A1 (en) * 2007-06-14 2010-01-28 Hrl Laboratories, Llc Integrated quartz biological sensor and method
US10266398B1 (en) 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
US8151640B1 (en) 2008-02-05 2012-04-10 Hrl Laboratories, Llc MEMS on-chip inertial navigation system with error correction
US7802356B1 (en) 2008-02-21 2010-09-28 Hrl Laboratories, Llc Method of fabricating an ultra thin quartz resonator component
US8176607B1 (en) 2009-10-08 2012-05-15 Hrl Laboratories, Llc Method of fabricating quartz resonators
CN101838503B (zh) * 2010-02-26 2014-06-25 佛山市柯林瓷砖护理用品有限公司 抛光砖、石材、人造石翻新用抛光剂
CN101857774B (zh) * 2010-06-01 2013-12-25 上海新安纳电子科技有限公司 一种提高硅衬底化学机械抛光速率的抛光组合物及其应用
US8912711B1 (en) 2010-06-22 2014-12-16 Hrl Laboratories, Llc Thermal stress resistant resonator, and a method for fabricating same
JP5516184B2 (ja) * 2010-07-26 2014-06-11 信越化学工業株式会社 合成石英ガラス基板の製造方法
EP2717297B1 (en) 2011-05-24 2016-07-27 Kuraray Co., Ltd. Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method
US9250074B1 (en) 2013-04-12 2016-02-02 Hrl Laboratories, Llc Resonator assembly comprising a silicon resonator and a quartz resonator
US9599470B1 (en) 2013-09-11 2017-03-21 Hrl Laboratories, Llc Dielectric high Q MEMS shell gyroscope structure
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
US9991863B1 (en) 2014-04-08 2018-06-05 Hrl Laboratories, Llc Rounded and curved integrated tethers for quartz resonators
US10308505B1 (en) 2014-08-11 2019-06-04 Hrl Laboratories, Llc Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
US10031191B1 (en) 2015-01-16 2018-07-24 Hrl Laboratories, Llc Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
US10110198B1 (en) 2015-12-17 2018-10-23 Hrl Laboratories, Llc Integrated quartz MEMS tuning fork resonator/oscillator
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
EP3700990B1 (en) 2017-10-25 2023-03-29 Saint-Gobain Ceramics & Plastics, Inc. Composition for conducting material removal operations and method for forming same
CN116042098A (zh) * 2023-02-08 2023-05-02 广东粤港澳大湾区黄埔材料研究院 一种纳米氧化铝抛光液及在红外硫系玻璃抛光中的应用

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US5516346A (en) * 1993-11-03 1996-05-14 Intel Corporation Slurries for chemical mechanical polishing
WO1999067056A1 (en) * 1998-06-23 1999-12-29 Arch Specialty Chemicals, Inc. Composition for the chemical mechanical polishing of metal layers
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
WO2001078116A2 (en) * 2000-04-11 2001-10-18 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide

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US4526631A (en) * 1984-06-25 1985-07-02 International Business Machines Corporation Method for forming a void free isolation pattern utilizing etch and refill techniques
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6471735B1 (en) * 1999-08-17 2002-10-29 Air Liquide America Corporation Compositions for use in a chemical-mechanical planarization process
JP4264781B2 (ja) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US6350393B2 (en) * 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry

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US5516346A (en) * 1993-11-03 1996-05-14 Intel Corporation Slurries for chemical mechanical polishing
US5836806A (en) * 1993-11-03 1998-11-17 Intel Corporation Slurries for chemical mechanical polishing
US5954975A (en) * 1993-11-03 1999-09-21 Intel Corporation Slurries for chemical mechanical polishing tungsten films
WO1999067056A1 (en) * 1998-06-23 1999-12-29 Arch Specialty Chemicals, Inc. Composition for the chemical mechanical polishing of metal layers
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
WO2001078116A2 (en) * 2000-04-11 2001-10-18 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide

Also Published As

Publication number Publication date
CN1359998A (zh) 2002-07-24
US20020129560A1 (en) 2002-09-19
US20040065864A1 (en) 2004-04-08
JP2002261053A (ja) 2002-09-13
EP1217651A1 (de) 2002-06-26
DE10063491A1 (de) 2002-06-27
DE50103461D1 (de) 2004-10-07
KR20020050161A (ko) 2002-06-26
EP1217651B1 (de) 2004-09-01
TW575645B (en) 2004-02-11
ATE275289T1 (de) 2004-09-15

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