SG106992G - Improved optocoupler - Google Patents

Improved optocoupler

Info

Publication number
SG106992G
SG106992G SG1069/92A SG106992A SG106992G SG 106992 G SG106992 G SG 106992G SG 1069/92 A SG1069/92 A SG 1069/92A SG 106992 A SG106992 A SG 106992A SG 106992 G SG106992 G SG 106992G
Authority
SG
Singapore
Prior art keywords
optocoupler
improved
improved optocoupler
Prior art date
Application number
SG1069/92A
Other languages
English (en)
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG106992G publication Critical patent/SG106992G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
SG1069/92A 1984-08-31 1992-10-14 Improved optocoupler SG106992G (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/646,290 US4645551A (en) 1984-08-31 1984-08-31 Method of making an octocoupler
PCT/US1985/001166 WO1986001458A1 (en) 1984-08-31 1985-06-21 Process for bonding the surfaces of two materials and an improved optocoupler manufactured therewith

Publications (1)

Publication Number Publication Date
SG106992G true SG106992G (en) 1992-12-24

Family

ID=24592487

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1069/92A SG106992G (en) 1984-08-31 1992-10-14 Improved optocoupler

Country Status (7)

Country Link
US (1) US4645551A (de)
EP (1) EP0192643B1 (de)
JP (1) JPH06104804B2 (de)
KR (1) KR910009528B1 (de)
DE (1) DE3579445D1 (de)
SG (1) SG106992G (de)
WO (1) WO1986001458A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01197588A (ja) * 1988-01-30 1989-08-09 Sony Corp 被接着体の表面処理方法
JPH028275A (ja) * 1988-06-28 1990-01-11 Mitsubishi Electric Corp 接着対象面の表面処理方法
CA1335495C (en) * 1988-12-22 1995-05-09 Renate Foerch Modification of polymer surfaces by two-step reactions
US5329131A (en) * 1991-05-17 1994-07-12 U.S. Philips Corporation Opto-electronic coupler having improved moisture protective housing
US5305178A (en) * 1991-08-12 1994-04-19 The United States Of America As Represented By The Secretary Of The Army Capacitor with increased electrical breakdown strength and method of forming the same
WO1993014881A1 (en) * 1992-02-03 1993-08-05 The United States Of America Secretary Of The Army, The Pentagon Polymer based film capacitor with increased dielectric breakdown strengths
DE4214792A1 (de) * 1992-05-04 1993-11-11 Telefunken Microelectron Verfahren zum Herstellen eines optoelektronischen Koppelelements
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
DE69423791T2 (de) * 1993-09-21 2000-08-10 Sumitomo Chemical Co., Ltd. Mehrschichtige Folie und Verfahren zu ihrer Herstellung
US5614131A (en) * 1995-05-01 1997-03-25 Motorola, Inc. Method of making an optoelectronic device
US5702775A (en) * 1995-12-26 1997-12-30 Motorola, Inc. Microelectronic device package and method
JPH1036510A (ja) * 1996-07-26 1998-02-10 Toray Dow Corning Silicone Co Ltd 電気部品およびその製造方法
JP3527369B2 (ja) * 1996-09-04 2004-05-17 東レ・ダウコーニング・シリコーン株式会社 電気部品およびその製造方法
US6299596B1 (en) * 1998-03-20 2001-10-09 Schneider (Usa) Inc. Method of bonding polymers and medical devices comprising materials bonded by said method
US20130181232A1 (en) * 2012-01-17 2013-07-18 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Optocoupler with Surface Functional Coating Layer
JP6092143B2 (ja) * 2014-03-14 2017-03-08 株式会社東芝 光結合装置
RU2618964C1 (ru) * 2016-03-10 2017-05-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Оренбургский государственный университет" Оптопара с шаровой лампой
RU2633934C1 (ru) * 2016-07-11 2017-10-19 Федеральное государственное бюджетное образовательное учреждение высшего образования "Оренбургский государственный университет" Оптопара
CN113540058A (zh) * 2021-06-03 2021-10-22 华润微集成电路(无锡)有限公司 一种高耐压光耦封装产品及制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655481A (en) * 1967-11-13 1972-04-11 Scm Corp Adhering resins to substrates, especially metal, by radiation
US3676289A (en) * 1970-04-29 1972-07-11 Bell Telephone Labor Inc Techniques for forming seals between polyethylene and fluorocarbon polymers
DE2304148A1 (de) * 1973-01-29 1974-08-01 Siemens Ag Optoelektronisches bauelement
US4047045A (en) * 1975-03-03 1977-09-06 Paxton Jr Grady W Optical coupler
US4114177A (en) * 1975-05-01 1978-09-12 Bell Telephone Laboratories, Incorporated Optically coupled device with diffusely reflecting enclosure
JPS52117380A (en) * 1976-03-29 1977-10-01 Toyo Ink Mfg Co Process for manufacturing laminated object
JPS52155636A (en) * 1976-06-21 1977-12-24 Toyo Ink Mfg Co Ltd Method of adhesion
DE2627944C2 (de) * 1976-06-22 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Optoelektronisches Koppelelement
JPS5324371A (en) * 1976-08-18 1978-03-07 Inoue Japax Res Method of jointing rubber and synthetic resin
JPS5334875A (en) * 1976-09-10 1978-03-31 Hitachi Ltd Method of adhesion of object to be jointed with base plate containing silicone resin
US4179619A (en) * 1977-12-02 1979-12-18 General Electric Company Optocoupler having internal reflection and improved isolation capabilities
DE2806167C2 (de) * 1978-02-14 1986-05-15 Siemens AG, 1000 Berlin und 8000 München Hochspannungsfester Optokoppler
US4271365A (en) * 1980-02-25 1981-06-02 General Electric Company Optocoupler having improved isolation
DE3011902C2 (de) * 1980-03-27 1996-11-28 Siemens Ag Optoelektronische Koppeleinrichtung
US4399014A (en) * 1980-05-03 1983-08-16 Engle Frank W Plasma reactor and method therefor
JPS57169279A (en) * 1981-04-09 1982-10-18 Toshiba Corp Photocoupling semiconductor device
US4450461A (en) * 1981-07-24 1984-05-22 General Electric Company Low cost high isolation voltage optocoupler with improved light transmissivity
JPS5857443A (ja) * 1981-09-29 1983-04-05 Dainippon Printing Co Ltd 接着性フイルム及びその製造方法
JPS58201381A (ja) * 1982-05-19 1983-11-24 Sanyo Electric Co Ltd 光結合装置

Also Published As

Publication number Publication date
JPH06104804B2 (ja) 1994-12-21
EP0192643A1 (de) 1986-09-03
EP0192643A4 (de) 1986-11-10
DE3579445D1 (de) 1990-10-04
KR910009528B1 (ko) 1991-11-21
WO1986001458A1 (en) 1986-03-13
KR870700510A (ko) 1987-12-29
EP0192643B1 (de) 1990-08-29
US4645551A (en) 1987-02-24
JPS62500106A (ja) 1987-01-16

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