SG10202103723UA - Lithography optics adjustment and monitoring - Google Patents

Lithography optics adjustment and monitoring

Info

Publication number
SG10202103723UA
SG10202103723UA SG10202103723UA SG10202103723UA SG10202103723UA SG 10202103723U A SG10202103723U A SG 10202103723UA SG 10202103723U A SG10202103723U A SG 10202103723UA SG 10202103723U A SG10202103723U A SG 10202103723UA SG 10202103723U A SG10202103723U A SG 10202103723UA
Authority
SG
Singapore
Prior art keywords
monitoring
optics adjustment
lithography optics
lithography
adjustment
Prior art date
Application number
SG10202103723UA
Inventor
Bibby, Jr
Omar Zurita
Abhishek Subramanian
Thomas Patrick Duffey
Khalid Khulusi Tahboub
Rostislav Rokitski
Donald James Haran
Joshua Jon Thornes
Original Assignee
Cymer LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/208,152 external-priority patent/US10095118B2/en
Application filed by Cymer LLC filed Critical Cymer LLC
Publication of SG10202103723UA publication Critical patent/SG10202103723UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J2001/4247—Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources
SG10202103723UA 2016-07-12 2017-06-29 Lithography optics adjustment and monitoring SG10202103723UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/208,152 US10095118B2 (en) 2016-07-12 2016-07-12 Lithography optics adjustment and monitoring
US15/619,900 US10345714B2 (en) 2016-07-12 2017-06-12 Lithography optics adjustment and monitoring

Publications (1)

Publication Number Publication Date
SG10202103723UA true SG10202103723UA (en) 2021-05-28

Family

ID=60940499

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201810276YA SG11201810276YA (en) 2016-07-12 2017-06-29 Lithography optics adjustment and monitoring
SG10202103723UA SG10202103723UA (en) 2016-07-12 2017-06-29 Lithography optics adjustment and monitoring

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201810276YA SG11201810276YA (en) 2016-07-12 2017-06-29 Lithography optics adjustment and monitoring

Country Status (8)

Country Link
US (2) US10345714B2 (en)
JP (4) JP6807954B2 (en)
KR (3) KR102369342B1 (en)
CN (2) CN113900362B (en)
NL (1) NL2019212A (en)
SG (2) SG11201810276YA (en)
TW (2) TWI664502B (en)
WO (1) WO2018013355A1 (en)

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US10345714B2 (en) * 2016-07-12 2019-07-09 Cymer, Llc Lithography optics adjustment and monitoring
KR102585069B1 (en) * 2018-06-04 2023-10-05 에이에스엠엘 네델란즈 비.브이. How to improve process models for patterning processes
KR102530873B1 (en) * 2019-02-25 2023-05-09 사이머 엘엘씨 Optical Elements for Deep Ultraviolet Light Sources
KR20220097965A (en) * 2019-12-11 2022-07-08 사이머 엘엘씨 Burst Statistics Data Integration Filter
JP7418577B2 (en) * 2019-12-23 2024-01-19 サイマー リミテッド ライアビリティ カンパニー Metrology to improve DUV laser alignment

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Also Published As

Publication number Publication date
SG11201810276YA (en) 2018-12-28
TWI720490B (en) 2021-03-01
US20190310558A1 (en) 2019-10-10
US10845711B2 (en) 2020-11-24
KR20190008356A (en) 2019-01-23
CN109416502B (en) 2021-11-02
US20180017878A1 (en) 2018-01-18
JP2021120765A (en) 2021-08-19
KR102369342B1 (en) 2022-02-28
KR102239188B1 (en) 2021-04-09
NL2019212A (en) 2018-01-15
KR102500711B1 (en) 2023-02-16
KR20220028188A (en) 2022-03-08
WO2018013355A1 (en) 2018-01-18
JP6807954B2 (en) 2021-01-06
CN113900362B (en) 2024-04-12
KR20210040197A (en) 2021-04-12
JP2023164565A (en) 2023-11-10
TW201812467A (en) 2018-04-01
TWI664502B (en) 2019-07-01
TW201935145A (en) 2019-09-01
CN113900362A (en) 2022-01-07
JP6892945B2 (en) 2021-06-23
JP2020109526A (en) 2020-07-16
JP2019523434A (en) 2019-08-22
US10345714B2 (en) 2019-07-09
CN109416502A (en) 2019-03-01

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