SG10202012351UA - A substrate processing apparatus - Google Patents
A substrate processing apparatusInfo
- Publication number
- SG10202012351UA SG10202012351UA SG10202012351UA SG10202012351UA SG10202012351UA SG 10202012351U A SG10202012351U A SG 10202012351UA SG 10202012351U A SG10202012351U A SG 10202012351UA SG 10202012351U A SG10202012351U A SG 10202012351UA SG 10202012351U A SG10202012351U A SG 10202012351UA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- substrate processing
- substrate
- processing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190169528A KR102225604B1 (en) | 2019-12-18 | 2019-12-18 | A substrate processing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202012351UA true SG10202012351UA (en) | 2021-07-29 |
Family
ID=75148049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202012351UA SG10202012351UA (en) | 2019-12-18 | 2020-12-10 | A substrate processing apparatus |
Country Status (6)
Country | Link |
---|---|
US (1) | US11862434B2 (en) |
JP (1) | JP7138293B2 (en) |
KR (1) | KR102225604B1 (en) |
CN (1) | CN113013055B (en) |
SG (1) | SG10202012351UA (en) |
TW (1) | TWI781488B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230197417A1 (en) * | 2021-12-17 | 2023-06-22 | Applied Materials, Inc. | Corrosion resistant polymer coatings for manufacturing equipment components |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010062209A (en) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | Processing apparatus with a chamber having therein a high-etching resistant sprayed film |
US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
TW200423195A (en) * | 2002-11-28 | 2004-11-01 | Tokyo Electron Ltd | Internal member of a plasma processing vessel |
US7220497B2 (en) * | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
US20050199183A1 (en) * | 2004-03-09 | 2005-09-15 | Masatsugu Arai | Plasma processing apparatus |
KR100757347B1 (en) * | 2006-08-30 | 2007-09-10 | 삼성전자주식회사 | Ion implanter |
US8206829B2 (en) * | 2008-11-10 | 2012-06-26 | Applied Materials, Inc. | Plasma resistant coatings for plasma chamber components |
KR101117670B1 (en) | 2009-02-02 | 2012-03-07 | 주식회사 테라세미콘 | Inductively coupled plasma generation source electrode and substrate processing apparatus comprising the same |
KR101165725B1 (en) | 2010-04-01 | 2012-07-18 | 피에스케이 주식회사 | Apparatus and method for treating substrate using plasma |
JP2012057251A (en) * | 2010-08-13 | 2012-03-22 | Toshiba Corp | Protective film, method for forming the same, apparatus for manufacturing semiconductor, and plasma treatment apparatus |
KR20130049364A (en) | 2011-11-04 | 2013-05-14 | 피에스케이 주식회사 | Plasma supplying unit and substrate treating unit including the unit |
JP6034156B2 (en) | 2011-12-05 | 2016-11-30 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
KR101419515B1 (en) * | 2012-09-24 | 2014-07-15 | 피에스케이 주식회사 | Baffle and method for treating surface of the baffle, and substrate treating apparatus and method for treating surface of the apparatus |
KR101559874B1 (en) * | 2014-03-21 | 2015-10-15 | 피에스케이 주식회사 | Substrate treating apparatus and chamber producing method |
US20150311043A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Chamber component with fluorinated thin film coating |
US20170040146A1 (en) * | 2015-08-03 | 2017-02-09 | Lam Research Corporation | Plasma etching device with plasma etch resistant coating |
TWM563652U (en) | 2016-10-13 | 2018-07-11 | 美商應用材料股份有限公司 | Chamber components for use in plasma processing apparatuses and apparatuses comprising the same |
US11087961B2 (en) * | 2018-03-02 | 2021-08-10 | Lam Research Corporation | Quartz component with protective coating |
JP7122854B2 (en) | 2018-04-20 | 2022-08-22 | 株式会社日立ハイテク | Plasma processing apparatus and member for plasma processing apparatus, or method for manufacturing plasma processing apparatus and method for manufacturing member for plasma processing apparatus |
US20190348261A1 (en) * | 2018-05-09 | 2019-11-14 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
-
2019
- 2019-12-18 KR KR1020190169528A patent/KR102225604B1/en active IP Right Grant
-
2020
- 2020-12-04 TW TW109142714A patent/TWI781488B/en active
- 2020-12-10 US US17/117,720 patent/US11862434B2/en active Active
- 2020-12-10 JP JP2020204790A patent/JP7138293B2/en active Active
- 2020-12-10 SG SG10202012351UA patent/SG10202012351UA/en unknown
- 2020-12-15 CN CN202011477968.5A patent/CN113013055B/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102225604B1 (en) | 2021-03-10 |
JP7138293B2 (en) | 2022-09-16 |
US20210193440A1 (en) | 2021-06-24 |
TWI781488B (en) | 2022-10-21 |
CN113013055B (en) | 2023-10-27 |
US11862434B2 (en) | 2024-01-02 |
JP2021097231A (en) | 2021-06-24 |
CN113013055A (en) | 2021-06-22 |
TW202126120A (en) | 2021-07-01 |
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