SG10202002668VA - Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device - Google Patents

Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device

Info

Publication number
SG10202002668VA
SG10202002668VA SG10202002668VA SG10202002668VA SG10202002668VA SG 10202002668V A SG10202002668V A SG 10202002668VA SG 10202002668V A SG10202002668V A SG 10202002668VA SG 10202002668V A SG10202002668V A SG 10202002668VA SG 10202002668V A SG10202002668V A SG 10202002668VA
Authority
SG
Singapore
Prior art keywords
semiconductor device
processing apparatus
substrate processing
reaction tube
manufacturing semiconductor
Prior art date
Application number
SG10202002668VA
Inventor
Marubayashi Tetsuya
Murata Satoru
Hirano Atsushi
Nakamura Iwao
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG10202002668VA publication Critical patent/SG10202002668VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG10202002668VA 2019-03-26 2020-03-23 Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device SG10202002668VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019059430 2019-03-26
JP2020027459A JP6994524B2 (en) 2019-03-26 2020-02-20 Manufacturing method of substrate processing equipment, reaction tube and semiconductor equipment

Publications (1)

Publication Number Publication Date
SG10202002668VA true SG10202002668VA (en) 2020-10-29

Family

ID=72714902

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202002668VA SG10202002668VA (en) 2019-03-26 2020-03-23 Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device

Country Status (3)

Country Link
JP (1) JP6994524B2 (en)
SG (1) SG10202002668VA (en)
TW (1) TWI777146B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11688621B2 (en) * 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2839621B2 (en) * 1990-02-13 1998-12-16 株式会社東芝 Thermal diffusion equipment for semiconductor manufacturing
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
WO2006030857A1 (en) * 2004-09-16 2006-03-23 Hitachi Kokusai Electric Inc. Heat treatment apparatus and substrate manufacturing method
JP2012248675A (en) * 2011-05-27 2012-12-13 Hitachi Kokusai Electric Inc Gas preheating cylinder, substrate processing apparatus, and substrate processing method
WO2016164569A1 (en) * 2015-04-07 2016-10-13 Applied Materials, Inc. Process gas preheating systems and methods for double-sided multi-substrate batch processing

Also Published As

Publication number Publication date
JP2020167385A (en) 2020-10-08
TWI777146B (en) 2022-09-11
JP6994524B2 (en) 2022-01-14
TW202044352A (en) 2020-12-01

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