JP2020167385A - Substrate processing apparatus, reaction tube, and method of manufacturing semiconductor device - Google Patents

Abstract

To provide a constitution capable of reducing a difference in processing results between substrates arranged in a substrate processing region.SOLUTION: A reaction tube 204 is provided therein with a process chamber where substrates are processed, and is heated by a heating portion provided therearound. The reaction tube includes: a gas introduction portion 233 which is provided on a lower end side of the reaction tube 204 and through which a process gas is introduced; a first supplier 270 arranged along a side surface of the reaction tube at least at a position facing a substrate processing region where the substrates are processed; a first preheating portion 268 provided at a position lower than the substrate processing region, the first preheating portion extending in a direction from the gas introduction portion toward the ceiling of the reaction tube; and a second preheating portion 266 extending in a direction perpendicular to the direction toward the ceiling of the reaction tube. The reaction tube further includes a preheating portion 260 connecting the gas introduction portion with the first supplier by combining the first preheating portion and the second preheating portion.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to a method for manufacturing a substrate processing apparatus, a reaction tube and a semiconductor apparatus.

In a substrate processing apparatus that performs treatments such as oxidation and diffusion on a substrate, gas may be introduced from a gas introduction port provided in the lower part of the reaction tube to supply gas to the reaction chamber. Patent Document 1 and Patent Document 2 describe a reaction tube structure in which a space for temporarily storing gas and adjusting the pressure is provided in the reaction tube, and the gas flows from this space into the reaction chamber.

According to Patent Document 3, a preheating cylinder is provided below the substrate processing region of the substrate holding portion, and gas from the gas introduction portion is circulated through the preheating cylinder to raise the gas.

Further, according to Patent Document 4, it is described that the gas flowing through the pipe arranged below the substrate processing region of the substrate holding portion is preheated.

However, the gas introduced from the gas introduction portion may pass through the pipe arranged on the side surface of the substrate processing region without being sufficiently warmed. As a result, the temperature of the outer periphery of the lower portion of the substrate processing region may decrease, resulting in a difference in the processing results between the substrates.

JP-A-11-07750 Japanese Unexamined Patent Publication No. 2018-088520 Japanese Unexamined Patent Publication No. 2012-248675 U.S. Pat. No. 5,948,300

An object of the present disclosure is to provide a configuration for reducing a difference in processing results between substrates arranged in a substrate processing region.

According to one aspect of the present disclosure, a reaction tube having a processing chamber for processing a substrate inside, and a gas introduction section provided on the lower end side of the reaction tube into which gas is introduced and at least the substrate are provided. At a position facing the substrate processing region to be processed, a first supply portion arranged along the side surface of the reaction tube and a position lower than the substrate processing region are provided, and the gas introduction portion to the ceiling of the reaction tube. It has a first preheating section extending in a direction toward the section and a second preheating section extending in a direction perpendicular to the direction toward the ceiling of the reaction tube, and the first preheating section and the second preheating section. By combining the units, a configuration including a reaction tube having a preheating unit configured to communicate the gas introduction unit and the first supply unit is provided.

It is possible to suppress a temperature drop due to gas flow in the substrate processing region, and as a result, it is possible to reduce the difference in processing results between the substrates arranged in the substrate processing region.

It is a schematic side view which shows the substrate processing apparatus which concerns on 1st Embodiment of this disclosure. It is a block diagram which shows the control part of the substrate processing apparatus which concerns on 1st Embodiment of this disclosure. It is a vertical cross-sectional view which shows the processing furnace of the substrate processing apparatus which concerns on 1st Embodiment of this disclosure. (A) to (C) are perspective views showing the structure of the reaction tube of the substrate processing apparatus according to the first embodiment of the present disclosure, and (D) is a vertical cross-sectional view showing the structure of the preheating part. It is a top sectional view which shows the processing furnace of the substrate processing apparatus which concerns on 1st Embodiment of this disclosure. It is a schematic block diagram which shows the internal structure of the processing furnace of the substrate processing apparatus which concerns on 1st Embodiment of this disclosure. It is a schematic block diagram which shows the internal structure of the processing furnace of the substrate processing apparatus which concerns on 2nd Embodiment of this disclosure. (A) and (B) are perspective views showing the configuration of the reaction tube of the substrate processing apparatus according to the third embodiment of the present disclosure, and (C) is a vertical cross-sectional view showing the configuration of the preheating portion. It is a vertical sectional view which shows the processing furnace of the substrate processing apparatus which concerns on Comparative Example 1. It is a side view and a plan view which show the structure of the reaction tube of the comparative example used for the test example, and the substrate processing apparatus which concerns on Example. It is a test result which showed the temperature distribution of the reaction tube of the substrate processing apparatus which concerns on a comparative example and an Example. It is a graph which shows the temperature of the inner wall of the reaction tube of the substrate processing apparatus which concerns on a comparative example and an Example. It is a schematic block diagram which shows the structure of the reaction tube and the structure of the preheating part of the substrate processing apparatus which concerns on other embodiment of this disclosure. It is a schematic block diagram which shows the structure of the reaction tube and the structure of the preheating part of the substrate processing apparatus which concerns on still another Embodiment of this disclosure.

[First Embodiment]
The processing apparatus 100 (board processing apparatus) according to the first embodiment of the present disclosure described on the one hand is configured to handle a semiconductor wafer, and processes such as oxide film formation, diffusion, and CVD on the semiconductor wafer. It is configured to be applied. In the present embodiment, the semiconductor wafer (hereinafter referred to as a wafer) 200 as a substrate is made of a semiconductor such as silicon, and the carrier (accommodator) for accommodating and transporting the wafer 200 is a FOUP (Front Opening Unified Pod). ) 110 is used.

As shown in FIG. 1, the substrate processing apparatus (hereinafter, also referred to as a processing apparatus) 100 according to the first embodiment includes a housing 111. An opening space is provided in the front front portion of the front wall 111a of the housing 111 so that maintenance can be performed, and front maintenance doors 104a and 104b for opening and closing the opening space are installed, respectively.

On the front wall 111a of the housing 111, a pod loading / unloading outlet 112 for loading / unloading the FOUP (hereinafter referred to as a pod) 110 is provided so as to communicate with the inside and outside of the housing 111, and the pod loading / unloading outlet 112 Is opened and closed by the front shutter 113.

A load port 114 is installed on the front front side of the pod carry-in / carry-out outlet 112, and the load port 114 is configured to be aligned with the pod 110 mounted. The pod 110 is carried onto the load port 114 by an in-process transfer device (not shown), and is also carried out from the load port 114.

A rotatable storage shelf 105 for storing pods is installed in the upper part of the housing 111 at a substantially central portion in the front-rear direction, and the storage shelf 105 is configured to store a plurality of pods 110. .. That is, the storage shelf 105 is vertically erected and includes a support column 116 and an n (n is 1 or more) stage shelf board 117 on the support column 116, and the plurality of shelf boards 117 address a plurality of pods 110. Each is configured to be held in a mounted state.

A pod transfer device 118 as a first transfer device is installed between the load port 114 and the storage shelf 105 in the housing 111. The pod transfer device 118 includes a pod elevator 118a that can move up and down while holding the pod 110, and a pod transfer mechanism 118b. The pod transfer device 118 is configured to transfer the pod 110 between the load port 114, the storage shelf 105, and the pod opener 121 by continuous operation of the pod elevator 118a and the pod transfer mechanism 118b.

The processing apparatus 100 includes a semiconductor manufacturing apparatus that performs processing such as forming an oxide film. The sub-housing 119 that constitutes the housing of the semiconductor manufacturing apparatus is constructed over the rear end at the lower portion in the substantially central portion in the front-rear direction in the housing 111.

On the front wall 119a of the sub-housing 119, there are a pair of wafer loading / unloading outlets (board loading / unloading outlets) 120 for loading and unloading the wafer 200 (see FIG. 3) into the sub-housing 119. A pair of pod openers 121 are installed at the wafer loading / unloading outlets 120 in the upper and lower tiers.

The pod opener 121 includes a mounting table 122 on which the pod 110 is placed, and a cap attachment / detachment mechanism 123 for attaching / detaching the cap of the pod 110. The pod opener 121 is configured to open and close the wafer loading / unloading port of the pod 110 by attaching / detaching the cap of the pod 110 mounted on the mounting table 122 by the cap attachment / detachment mechanism 123.

The sub-housing 119 constitutes a transfer chamber 124 that is fluidly isolated from the installation space of the pod transfer device 118 and the storage shelf 105. A wafer transfer mechanism (board transfer mechanism) 125 is installed in the front region of the transfer chamber 124. The substrate transfer mechanism 125 includes a wafer transfer device (board transfer device) 125a and a wafer transfer device elevator (board transfer device elevating mechanism) 125b. The substrate transfer device 125a holds the wafer 200 by the tweezers 125c and rotates or linearly moves the wafer 200 in the horizontal direction. The board transfer device elevating mechanism 125b raises and lowers the board transfer device 125a. The board transfer mechanism 125 loads (charges) and dismounts (discharges) the wafer 200 into the boat (board holder) 217 by the continuous operation of the board transfer device elevating mechanism 125b and the board transfer device 125a. ..

As shown in FIGS. 1 and 3, a boat elevator 115 as an elevating mechanism, which will be described later, is installed in the transfer chamber 124. The boat elevator 115 is configured to raise and lower the boat 217. A lid 219 as a lid is horizontally installed on the arm as a connecting tool connected to the boat elevator 115, and the lid 219 vertically supports the boat 217 and closes the lower end of the processing furnace 202. It is configured to be possible. The boat 217 is provided with holding members as a plurality of support portions, and a plurality of wafers (for example, about 50 to 125 wafers) 200 are aligned horizontally with their centers aligned in the vertical direction. , It is configured to be held on the support at regular intervals.

The material of the holding member is quartz (SiO ₂ ), SiC (silicon carbide or silicon carbide), or Si (silicon). In addition, the material is used properly according to the process processing temperature. For example, if the process treatment temperature is 950 ° C. or lower, a quartz material is used, and if the process treatment temperature is high temperature treatment of 950 ° C. or higher, a SiC material, a Si material, or the like is used. Further, there are various types of claw shapes of the support portion, such as a short one, a long one, and one having a small contact area with the wafer 200, and are configured to differ depending on the process conditions.

(Processing device pod loading / unloading operation)
Next, the pod loading / unloading operation of the processing device 100 will be described.
As shown in FIG. 1, when the pod 110 is supplied to the load port 114, the pod carry-in / carry-out outlet 112 is opened by the front shutter 113, and the pod 110 above the load port 114 is encapsulated by the pod transfer device 118. It is carried into the inside of the body 111 from the pod carry-in / carry-out outlet 112.

The carried-in pod 110 is automatically transported to the designated shelf board 117 of the storage shelf 105 by the pod transfer device 118, delivered, and temporarily stored, and then from the shelf board 117 to one of the pod openers 121. It is either transported and transferred to the mounting table 122, or directly transported to the pod opener 121 and transferred to the mounting table 122. At this time, the wafer loading / unloading outlet 120 of the pod opener 121 is closed by the cap attachment / detachment mechanism 123, and clean air is circulated and filled in the transfer chamber 124.

The opening side end face of the pod 110 mounted on the mounting table 122 is pressed against the opening edge of the wafer loading / unloading outlet 120 on the front wall 119a of the sub-housing 119, and the cap is removed by the cap attachment / detachment mechanism 123. The wafer loading / unloading port of the pod 110 is opened. The wafer 200 is picked up from the pod 110 by the tweezers 125c of the substrate transfer device 125a through the wafer loading / unloading port, and after aligning the wafers with a notch alignment device (not shown), it is transferred to the boat 217 and loaded (wafer charging). ). The substrate transfer device 125a, which has delivered the wafer 200 to the boat 217, returns to the pod 110 and loads the next wafer 200 into the boat 217.

During the loading operation of the wafer 200 into the boat 217 by the substrate transfer mechanism 125 in one (upper or lower) pod opener 121, the other (lower or upper) pod opener 121 is loaded from the storage shelf 105 to the load port 114. Another pod 110 is conveyed by the pod transfer device 118, and the opening work of the pod 110 by the pod opener 121 is simultaneously carried out.

When the number of wafers 200 specified in advance is loaded on the boat 217, the lower end of the processing furnace 202 is opened by the furnace opening gate valve 147. Subsequently, the lid 219 is raised by the lift of the boat elevator 115, and the boat 217 supported by the lid 219 is carried (loaded) into the processing furnace 202.

After loading, the wafer 200 is processed in the processing furnace 202. After the treatment, the boat 217 is pulled out by an elevating mechanism (not shown). After that, the wafer 200 and the pod 110 are discharged to the outside of the housing 111 in the reverse procedure of the above except for the matching step of the wafer 200 with the notch matching device (not shown).

Next, the configuration of the controller 240 as a control unit will be described with reference to FIG. The controller 240 includes a CPU (central processing unit) 224 as a processing unit, a memory (RAM, ROM, etc.) 226 as a temporary storage unit, a hard disk drive (HDD) 222 as a storage unit, and a transmission / reception module 228 as a communication unit. It is configured as a computer. Further, the controller 240 is an operation unit including a command unit 220 including at least the CPU 224 and the memory 226 described above, a transmission / reception module 228, a hard disk drive 222, a display device such as a liquid crystal display, and a pointing device such as a keyboard and a mouse. The user interface (UI) device 248 may be included in the configuration. In addition to each recipe file such as a recipe in which processing conditions and processing procedures are defined, a control program file for executing each of these recipe files, and a parameter file for setting processing conditions and processing procedures, the hard disk drive 222 has Various screen files including input screens for inputting process parameters (none of which are shown) are stored.

A switching hub or the like is connected to the transmission / reception module 228 of the controller 240. The controller 240 is configured to transmit and receive data with an external computer or the like via a network by the transmission / reception module 228.

Further, the controller 240 is electrically connected to the gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238, such as sensors installed in the housing 111 via the communication line by the transmission / reception module 228. It is connected to the.

The controller 240 according to the embodiment of the present disclosure can be realized by using a normal computer system without using a dedicated system. For example, by installing the program on a general-purpose computer from a recording medium (USB or the like) in which the program for executing the above-mentioned processing is stored, each controller that executes a predetermined processing can be configured.

And the means for supplying these programs is arbitrary. In addition to being able to be supplied via a predetermined recording medium as described above, it may be supplied via, for example, a communication line, a communication network, a communication system, or the like. In this case, for example, the program may be posted on a bulletin board of a communication network and provided by superimposing it on a carrier wave via the network. Then, by starting the program provided in this way and executing it in the same manner as other application programs under the control of the OS, a predetermined process can be executed.

(Composition of processing furnace)
As shown in FIG. 3, the processing furnace 202 has a heater (heating unit) 206. The heater 206 has a cylindrical shape and is vertically installed by being supported by a holding plate (heater base) 251. The upper opening of the heater 206 is closed by the lid member 207.

Inside the heater 206, a heat equalizing tube (outer tube) 205 is arranged concentrically with the heater 206. The heat soaking tube 205 is made of a heat-resistant material such as SiC, and is formed in a cylindrical shape with the upper end closed and the lower end open.

Inside the heat equalizing tube 205, a reaction tube (inner tube) 204 is arranged concentrically with the heat equalizing tube 205. The reaction tube 204 is made of a heat-resistant material such as quartz, and is formed in a cylindrical shape with the upper end closed and the lower end open. The hollow portion of the reaction tube 204 forms a processing chamber 201, and the processing chamber 201 is configured to accommodate a boat 217 in which the wafers 200 are held in a horizontal posture and arranged in multiple stages in the vertical direction. Here, the space between the reaction tube 204 and the heat soaking tube 205 is provided with a clearance of only about 30 mm, and a tube having a large diameter cannot be provided.

As shown in FIGS. 4 and 5, a tubular gas introduction portion 233 to which the processing gas is supplied from the outside is provided in the lower part of the reaction tube 204.
From the gas introduction section 233, a plurality of thin tubes 230 having a circular cross section (three in the present embodiment) having a diameter smaller than that of the gas introduction section 233 extend upward along the outer peripheral surface of the reaction tube 204, and the thin tubes 230. The upper end of the reaction tube 204 is connected to a preheating section 260 as a preheating path arranged on the outer peripheral surface of the reaction tube 204. The thin tube 230 may be a part of the gas introduction section 233.
A plurality of thin tubes 230 are in contact with the inner tube 204, and are fixed to the inner tube 204 so that the thin tubes 230 are adjacent to each other. By providing a plurality of thin tubes 230 in this way, it is possible to increase the flow rate that can be supplied to the inner tube 204 at one time. Needless to say, the thin tube 230 may be thin so as to fit in the space between the inner tube 204 and the outer tube 205, and the cross-sectional shape of the tube is not limited to a circle but may be a rectangle or the like. For example, the diameter of the thin tube 230 is in the range of 5 mm or more and 8 mm or less, preferably 5 mm. Further, the number of thin tubes 230 may be a plurality, and may be, for example, three or more.

The preheating unit 260 is connected to a plurality of (three in this embodiment) thin tubes 270 having a circular cross section, and the thin tubes 270 having the same configuration as the thin tubes 230 are buffers provided on the ceiling of the reaction tube 204. It is connected to the nozzle pipe 274 as a gas supply unit via the unit 272. The processing gas introduced from the gas introduction unit 233 from the gas hole 278 as the gas supply unit provided in the nozzle tube 274 arranged on the outer peripheral surface of the reaction tube 204 is configured to be supplied to the processing chamber 201. ..

Here, in the present specification, the tube member is a member that communicates from the gas introduction section 233 to the gas hole 278, and is the above-mentioned thin tube 230, preheating section 260, thin tube 270, buffer section 272, nozzle tube 274, thin tube 276. Can be collectively referred to as a pipe member. However, the tube member is not limited to the configuration of the present embodiment including the thin tube 230, the preheating section 260, the thin tube 270, the buffer section 272, the nozzle tube 274, and the thin tube 276. Further, as shown in FIG. 3, since these tube members are provided outside the reaction tube 204, they are configured to be provided between the reaction tube 204 and the heater 206. Further, the thin tube 230, the thin tube 270, and the thin tube 276 have the same diameter.

(Structure of preheating part)
In the present embodiment, the region of the side surface of the reaction tube 204 (hereinafter, also referred to as the side wall) facing the wafer 200 to be gas-treated inside is referred to as a wafer processing region 262 as a substrate processing region. The region where the preheating portion 260 is arranged below the wafer processing region 262 is called a gas preheating region 264. Then, in the gas preheating region 264, the preheating portion 260 is provided on the side surface of the reaction tube 204 at a position lower than the wafer processing region 262 in which the wafer 200 is arranged in the processing chamber 201, and from the gas introduction portion 233. The reaction tube 204 is configured to extend in a detour direction with respect to the direction toward the ceiling. Further, for example, the preheating section 260 is configured so that the processing gas introduced from the gas introduction section 233 extends in a direction intersecting the direction in which the processing gas introduced from the gas introduction section 233 flows to the ceiling portion of the reaction tube 204 at the shortest distance. Further, for example, at least a part of the preheating unit 260 is provided so as to extend in the outer peripheral direction of the reaction tube 204. Hereinafter, description will be made with reference to figures.

As shown in FIGS. 4 and 5, a plurality of preheating tubes 266 extending in the circumferential direction of the reaction tube 204 over a range of approximately 190 ° are provided in the preheating section 260 in the vertical direction (four in the present embodiment). The ends of the preheating tubes 266 that are arranged and adjacent to each other are alternately connected by small diameter connecting tubes (three in this embodiment) 268 having a circular cross section, and are rectangular wavy as a whole (two cycles, two reciprocations). Preliminary heating path is formed.
In the present embodiment, the connecting tube 268 corresponds to the first preheating section, the preheating tube 266 corresponds to the second preheating section, and the preheating section 260 is formed by combining the connecting tube 268 and the preheating tube 266. It is configured.
The range in which the preheating tube 266 is provided in the circumferential direction of the reaction tube 204 is arbitrarily determined by the positional relationship between the gas introduction section 233 and the nozzle tube 274. As an example, the range in which the preheating tube 266 is provided in the circumferential direction of the reaction tube 204 is the range from the gas introduction portion 233 to the position where the nozzle tube 274 is arranged in the circumferential direction. As an example, the range in which the preheating tube 266 is provided in the circumferential direction of the reaction tube 204 is, as shown in FIG. 5, from the position where the gas introduction portion 233 is arranged to 0 ° to the position where the nozzle tube 274 is arranged. When N °, the range in which the preheating tube 266 is arranged in the circumferential direction of the reaction tube 204 can be set to be larger than 0 ° and smaller than N °. Further, the range in which the preheating tube 266 is provided in the circumferential direction of the reaction tube 204 can be set to be larger than 180 ° and smaller than N °. Needless to say, the above-mentioned 190 ° is an example. Further, the preheating tube 266 is configured to be arranged in the circumferential direction of the reaction tube 204 so that the preheating path becomes long. Here, the connecting pipe 266 has the same configuration as the thin pipe 230 (thin pipe 270). In the present embodiment, the flow path cross-sectional area of the connecting pipe 266 is set to be substantially the same as or the same as the flow path cross-sectional area of the thin pipe 230 (for 3 pipes) and the thin pipe 270 (for 3 pipes).
Further, as shown in FIGS. 4 (C) and 5, the reaction tube 204 and the heat equalizing tube 205 (not shown in FIGS. 4 (C) and 5) are provided in a space (cylindrical space). The temperature sensor 267 as a temperature measuring instrument is preferably provided on the opposite side of the preheating tube 266 so as not to come into contact with or approach the preheating tube 266. That is, when the preheating tube 266 and the temperature sensor 267 are close to each other, the temperature sensor 267 that originally measures the temperature inside the reaction tube 204 may measure the temperature of the preheating tube 266.

As shown in FIG. 4D, the preheating tube 266 of the present embodiment uses a tube member having a rectangular vertical cross-sectional shape because the space between the reaction tube 204 and the soaking tube 205 is very narrow as described above. Has been done. In this way, by matching the shape of the pipe member with the vertical cross-sectional shape of this gap (space), the cross-sectional shape of the preheating path can be increased, so that the flow rate of gas passing through this preheating path is increased. be able to.
Further, the preheating tube 266 and the connecting tube 268 constituting the preheating section 260 are close to or in contact with the outer peripheral surface of the reaction tube 204, and the heat from the heater 206 and the heat from the reaction tube 204 are transferred to the preheating tube. It has a role of transmitting to the gas passing through the preheating path formed inside the 266 and the connecting pipe 268.
In the present embodiment, in the gas preheating region 264, since the cross-sectional shape of the plurality of thin tubes 230 and the plurality of connecting tubes 268 and the cross-sectional shape of the preheating tube 266 are different, the connecting portion between the thin tube 230 and the preheating tube 266 of the preheating section 260 In the connecting portion between the connecting pipe 268 and the preheating pipe 266, the gas passing through the preheating flow path is configured to be mixed. As a result, the gas introduced from the thin tube 230 is introduced into the thin tube 270 via the preheating section 260 while the temperature of the gas at the connecting portion is made uniform.
It is better that the effect of temperature equalization by this gas mixing is large. If the length of the preheating tube 266 in the vertical direction is shortened, the number of connecting portions between the connecting tube 268 and the preheating tube 266 can be increased. On the other hand, since the cross-sectional area of the preheating path of the preheating tube 266 is reduced, the flow rate of the gas passing through the preheating path is reduced.
Therefore, in the case of the present embodiment, the preheating section 260 has the same cross-sectional area of the flow path of the thin tube 230 or the cross-sectional area of the preheating path in the connecting pipe 268 and the cross-sectional area of the preheating path in the preheating tube 266, or The cross-sectional area of the preheating path in the preheating tube 266 is larger, and the gas passes through the cross-sectional area of the preheating path in the connecting tube 268 and the preheating path in the preheating tube 266 a plurality of times.
Further, as shown in FIG. 4, the preheating tube 266 is fixed to the reaction tube 204 via the mounting portion 266a. A plurality of mounting portions 266a are provided in the outer peripheral direction of the reaction tube 204.
When the preheating tube 266 is brought into contact with the reaction tube 204 and fixed (welded), (1) the temperature of the reaction chamber is lowered by the gas flowing in the preheating tube 266, (2) the gas flow rate is lowered by the welding deformation of the preheating tube 266, and (3). ) Since there is a risk of clearance variation with parts inside the reaction tube (boat 217, etc.) due to welding deformation of the reaction tube 204, and further interference, the structure shown in FIG. 4 (D) is adopted. According to this structure, the welded portion (area) and contact area with the reaction tube 204 can be reduced as much as possible, and the risk caused by the above-mentioned welded area and contact area can be reduced.

The upper end of the thin tube 230 extending from the gas introduction section 233 is connected to the end of the lowermost preheating tube 266 that constitutes the preheating section 260, and the uppermost preheating tube is arranged. The lower end of the thin tube 270 extending upward is connected to the end of the tube 266.

(Buffer part 272)
A buffer portion 272 as a circularly formed buffer box is provided at the apex portion (upper side of the ceiling portion) of the reaction tube 204. The upper end of the thin tube 270 extending from the preheating section 260 is connected to the buffer portion 272 on one side in the radial direction, so that the gas passing through the preheating section 260 is introduced into the buffer portion 272.

The reaction tube 204 is provided with a nozzle tube 274 extending in the vertical direction on the outer peripheral surface on the side opposite to the side where the thin tube 230 and the thin tube 270 are arranged. Specifically, the nozzle tube 274 forms a part of the side wall of the reaction tube 204, and a part of the nozzle tube 274 is provided so as to protrude into the space between the reaction tube 204 and the heat soaking tube 205. The upper end of the nozzle tube 274 is connected to the buffer portion 272 via a small-diameter thin tube 276, and the gas passing through the buffer portion 272 is introduced into the nozzle tube 274. The diameter of the nozzle tube 274 has a circular cross-sectional shape, and is larger than the diameter of the thin tube 276. For example, the diameter is adjusted to be larger than 20 mm and about 50 mm. The thin tube 276 may be included in a part of the nozzle tube 274.

In the nozzle tube 274, gas holes 278 (see FIG. 5) for ejecting gas toward the inside of the reaction tube 204 are provided at predetermined intervals (constant) set in advance along the longitudinal direction from the lower end to the upper end. Multiple are formed at intervals).
The gas holes 278 are arranged between the wafer 200 and the wafer 200 at the same interval as the distance between the plurality of support portions supporting the wafer 200 of the boat 217, and the gas is provided between the wafer 200 and the wafer 200. Is formed in the nozzle tube 274 so as to eject.

As shown in FIGS. 3 to 5, the lower part of the reaction tube 204 is formed in a tubular shape on the side opposite to the side where the nozzle tube 274 is arranged in order to exhaust the atmosphere inside the reaction tube 204 to the outside. The gas exhaust section (exhaust port) 231 is provided.

A processing gas supply source, a carrier gas supply source, and an inert gas supply source (not shown) are connected to the upstream side of the gas introduction unit 233 via an MFC (mass flow controller) 235 as a gas flow rate control unit shown in FIG. There is. The MFC 235 is configured to control the flow rate of the gas supplied to the processing chamber 201 at a desired timing so as to have a desired amount. The gas supply system in this embodiment is composed of at least a processing gas supply source, a carrier gas supply source, an inert gas supply source, and an MFC 235 (not shown).

Further, the sequencer (not shown) is configured to control the supply and stop of gas by opening and closing a valve (not shown). The controller 240 is configured to control the MFC 235 and the sequencer so that the flow rate of the gas supplied to the processing chamber 201 becomes a desired flow rate at a desired timing.

FIG. 6 shows the processing furnace 202 when the boat 217 is loaded in the reaction tube 204. Only a part of the wafer 200 is displayed for explanation, and the horizontal arrows indicate the flow (direction) of the processing gas.
In the heat insulating region of the boat 217 (the region where the heat insulating plate 218A of the heat insulating cylinder 218 described later is held), the pitch between the heat insulating plates 218A is about ten and several millimeters, and the gas hole 278 of the nozzle pipe 274 (FIG. 6). The interval (not shown) is also adjusted to the same pitch. The gas hole 278 (not shown in FIG. 6) formed on the lowermost side is provided at a position facing the gas exhaust portion 231 (see FIG. 5).

In this way, the gas hole 278 can be provided at the lower end of the boat 217 (the position facing the gas exhaust portion 231) to supply the gas, so that the gas stagnation at the lower end of the boat 217 can be eliminated. In particular, even in the heat insulating region, gas can be supplied to the processing chamber 201 from the gas hole 278 to form a gas flow parallel to the surface of the heat insulating plate 218A. In this way, since the same gas flow as that of the wafer processing region 262 can be formed, particles caused by gas stagnation at the lower end of the wafer processing region 262 can be suppressed.

While the gas is temporarily retained in the buffer unit 272 described above, the gas is continuously heated by the heat from the reaction tube 204 and the heat from the heater 206. Then, the sufficiently heated gas is ejected from the gas hole 278 of the nozzle tube 274 and supplied to the processing chamber 201. Therefore, the temperature difference between the temperature of the supplied gas and the parts (SiC parts, quartz parts, wafer 200) constituting the processing chamber 201 becomes small, and the particles caused by this temperature difference are reduced.

As shown in FIG. 3, a holding body 257 as a base flange capable of airtightly closing the lower end opening of the reaction tube 204 and a lid body 219 are provided at the lower end portion of the reaction tube 204. The lid 219 is made of a metal such as stainless steel and is formed in a disk shape. The holding body 257 is made of, for example, quartz, is formed in a disk shape, and is mounted on the lid body 219. An O-ring 223 as a sealing member that comes into contact with the lower end of the reaction tube 204 is provided on the upper surface of the holding body 257.

A rotation mechanism 254 for rotating the boat 217 is installed on the side of the lid 219 opposite to the processing chamber 201. The rotating shaft 255 of the rotating mechanism 254 penetrates the lid body 219 and the holding body 257 and is connected to the heat insulating cylinder 218 and the boat 217, so that the wafer 200 is rotated by rotating the heat insulating cylinder 218 and the boat 217. It is configured in.

The lid 219 is configured to be vertically raised and lowered by a boat elevator 115 installed vertically outside the reaction tube 204, whereby the boat 217 can be carried in and out of the processing chamber 201. It has become. A drive control unit 237 is electrically connected to the rotation mechanism 254 and the boat elevator 115, and is configured to control a desired operation at a desired timing.

The boat 217 is made of a heat-resistant material such as quartz or silicon carbide, and is configured to align and hold a plurality of wafers 200 in a horizontal posture and centered on each other. Below the boat 217, a heat insulating cylinder 218 as a cylindrical heat insulating member made of a heat-resistant material such as quartz or silicon carbide is provided so as to support the boat 217, and the heat from the heater 206 reacts. It is configured so that it is difficult to be transmitted to the lower end side of the pipe 204.

A temperature control unit 238 is electrically connected to the heater 206 and the temperature sensor 267, and the temperature information detected by the temperature sensor 267 is used to adjust the degree of energization of the heater 206 in the processing chamber 201. It is configured to control the temperature at a desired timing so that the temperature has a desired temperature distribution.

An exhaust pipe 229 is connected to the gas exhaust unit 231. A pressure regulator 242 including at least an APC valve and an exhaust device are connected to the downstream side of the exhaust pipe 229. These form part of the exhaust system. Further, the pressure control unit 236 is electrically connected to the pressure adjusting device 242 and the exhaust device, and controls the exhaust system so that the pressure in the processing chamber 201 becomes a predetermined pressure.

(Action, effect)
Next, using the processing furnace 202 related to the processing apparatus 100, a method of subjecting the wafer 200 to treatments such as oxidation and diffusion (particularly, treatments such as PYRO, DRY oxidation and annealing) as one step of the manufacturing process of the semiconductor device. Will be described. In the following description, the operation of each part constituting the processing device 100 is controlled by the controller 240.

When a plurality of wafers 200 are loaded into the boat 217 (wafer charging), the boat 217 holding the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the lid body 219 is in a state where the lower end of the reaction tube 204 is sealed via the holding body 257 and the O-ring 223.

The processing chamber 201 is heated by the heater 206 to a desired temperature. At this time, the degree of energization of the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor 267 so that the processing chamber 201 has a desired temperature distribution.
Subsequently, the rotation mechanism 254 rotates the heat insulating cylinder 218 and the boat 217 to rotate the wafer 200.

Next, the gas supplied from the processing gas supply source and the carrier gas supply source (not shown) and controlled by the MFC 235 to have a desired flow rate is introduced into the gas introduction unit 233.
The gas introduced into the gas introduction section 233 at the lower part of the reaction tube 204 flows through the thin tube 230 and is introduced into the nozzle tube 274 via the preheating section 260, the thin tube 270, and the buffer section 272, and a plurality of gas holes 278. Is introduced into the processing chamber 201.

The gas introduced into the gas introduction unit 233 is preheated by the heat from the heater 206 and the heat from the reaction tube 204 in the preheating unit 260, and after the temperature has risen sufficiently, it passes through the thin tube 270 of the wafer processing region 262. Therefore, the temperature drop of the wafer processing region 262 is suppressed, and the temperature of the wafer processing region 262 facing the wafer 200 in the reaction tube 204 can be made uniform.

If the gas introduced into the gas introduction unit 233 is passed through the wafer processing region 262 without preheating, the cold gas will pass through the thin tube 270, and the temperature of the portion where the thin tube 270 is arranged will decrease, resulting in a reaction. The temperature of the tube 204 becomes non-uniform. As a result, the temperature uniformity of the wafer 200 is adversely affected.

The gas heated through the preheating section 260 is ejected to the processing chamber 201 from the gas hole 278 provided in the nozzle tube 274 via the buffer section 272. The gas ejected from the plurality of gas holes 278 comes into contact with the surface of the wafer 200 when passing through the processing chamber 201, and the wafer 200 is subjected to treatments such as oxidation and diffusion. At this time, since the wafer 200 is also rotated by rotating the boat 217, the gas comes into contact with the surface of the wafer 200 evenly.

Further, since the temperature of the wafer processing region 262 facing the plurality of wafers 200 is uniform, the plurality of wafers 200 can be uniformly heated.

Further, an exhaust gas by an ejector (not shown) provided on the downstream side of the gas exhaust unit 231 supplies a uniform flow rate of gas from each of the plurality of gas holes 278 to the processing chamber 201 at a predetermined flow rate, whereby, for example, It is possible to quickly exhaust the outgas during heat treatment to the exhaust system.

When the wafer 200 is treated with steam, the gas controlled by the MFC 235 to have a desired flow rate is supplied to the steam generator, and the steam (H) generated by the steam generator. _The gas containing ₂ O) is introduced into the processing chamber 201.

When the preset treatment time elapses, the inert gas is supplied from the inert gas supply source, the treatment chamber 201 is replaced with the inert gas, and the pressure in the treatment chamber 201 is restored to the normal pressure.

After that, the lid 219 is lowered by the elevating mechanism 151 to open the lower end of the reaction tube 204, and the treated wafer 200 is held by the boat 217 from the lower end of the reaction tube 204 to the outside of the reaction tube 204. It is carried out (boat unloading). After that, the processed wafer 200 is taken out by the boat 217 (wafer discharging).

As described above, in the processing apparatus 100 of the present embodiment, the gas passing through the thin tube 270 arranged in the wafer processing area 262 is sufficiently preheated by the preheating unit 260, and the wafer depends on the temperature of the gas passing through the thin tube 270. The influence on the processing area 262 is suppressed. As a result, since the temperature of the wafer processing region 262 facing the plurality of wafers 200 is made uniform, processing defects of the wafer 200 due to the non-uniform temperature are suppressed.

[Second Embodiment]
Next, the processing apparatus 100 according to the second embodiment will be described with reference to FIG. 7. The same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 7, in the processing apparatus 100 of the present embodiment, on the upper side of the heater 206, it faces the radial outside of the buffer portion 272 and the radial outside of the wafer 200 that is gas-treated inside the reaction tube 204. A cylindrical upper heater 280 is provided at a position (above the wafer processing region 262), and a plate-shaped ceiling heater 282 is provided above the heat equalizing tube 205. The upper heater 280 and the ceiling heater 282 can be set to a temperature different from that of the heater 206 by the controller 240.

Since the processing apparatus 100 of the present embodiment has a configuration in which the gas accumulated in the buffer portion 272 can be heated at least one of the upper heater 280 and the ceiling heater 282, the temperature is higher than that of the first embodiment. The wafer 200 can be processed by supplying gas to the processing chamber 201 of the reaction tube 204. As a result, the processing gas can be supplied to the processing chamber 201 by reducing the difference from the temperature of the members constituting the processing chamber 201, so that the particles caused by this temperature difference are reduced. The other actions and effects are the same as those in the first embodiment.

[Third Embodiment]
Next, the processing apparatus 100 according to the third embodiment of the present disclosure will be described with reference to FIG. The same components as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 8, the preheating section 260 of the processing apparatus 100 of the present embodiment preheats the preheating tube 266 having a rectangular cross section of the preheating section 260 of the first embodiment to be composed of three thin tubes having a circular cross section. It was replaced with a tube 284. The preheating tube 284 and the connecting tube 268, the preheating tube 284 and the thin tube 230, and the preheating tube 284 and the thin tube 270 are each connected via a joint 286.
The connecting tube 168 of the present embodiment is a tube member having a rectangular vertical cross-sectional shape, and has a cross-sectional shape different from that of the connecting tube 268, the preheating tube 284, the thin tube 230, and the thin tube 270 having a circular cross section. In the present embodiment, a thin tube is used for the preheating tube 284, but since the flow path cross-sectional area is large as a set of three, the gas can be sufficiently preheated as in the preheating tube 266 of the first embodiment. It can be carried out.
The other actions and effects are the same as those in the first and second embodiments.

(Test example)
Tests were conducted using two types of reaction tubes (Comparative Examples 1 and 2) according to Comparative Examples and three types of reaction tubes (Examples 1 to 3) of Examples applied to the embodiment having the above-mentioned preheating route. The results of the implementation and comparative verification will be described below. In the drawings for explaining the following comparative examples and examples, the same components as those in the above embodiment are designated by the same reference numerals.

The comparative example and the example have the same structure with respect to the internal structure of the reaction tube and the nozzle tube, but the structure of the gas path from the gas introduction portion to the nozzle tube is different. The differences in the gas pathways will be described below.

Comparative Example 1: As shown in FIGS. 9 and 10, on the outer surface of the reaction tube 204, three thin tubes 290 having an inner diameter of φ5 mm extending upward from the gas introduction portion 233 cross the apex of the reaction tube 204. It is directly connected to the nozzle tube 274 (no preheating path).

Comparative Example 2: As shown in FIG. 10, on the outer surface of the reaction tube 204, one thin tube 292 having an inner diameter of φ21 mm extending upward from the gas introduction portion 233 crosses the apex of the reaction tube 204 and is a nozzle tube. It is directly connected to 274 (no preheating path).

Example 1: As shown in FIG. 10, on the outer surface of the reaction tube 204, three thin tubes 230 having an inner diameter of φ5 mm extend upward from the gas introduction section 233 to the preheating section 260, and the preheating section 260 extends from the preheating section 260. Three thin tubes 270 extending further upward are connected to the nozzle tube 274 across the apex of the reaction tube 204. In the preheating section 260, the thin tube 230 is arranged at 190 ° in the circumferential direction, and the preheating path is reciprocated once.

Example 2: As shown in FIG. 10, on the outer surface of the reaction tube 204, three thin tubes 230 having an inner diameter of φ5 mm extend upward from the gas introduction section 233 to the preheating section 260, and the preheating section 260 extends from the preheating section 260. Three thin tubes 270 extending further upward are connected to the nozzle tube 274 across the apex of the reaction tube 204. The preheating section 260 is formed by arranging a thin tube 230 at 190 ° in the circumferential direction and reciprocating the preheating path twice.

Example 3: As shown in FIG. 10, on the outer surface of the reaction tube 204, three thin tubes 230 having an inner diameter of φ5 mm extend upward from the gas introduction section 233 via the preheating section 260, and the preheating section Three thin tubes 270 extending further upward from 260 are connected to the nozzle tube 274 across the apex of the reaction tube 204. The preheating section 260 is formed by arranging a rectangular tube 294 having a rectangular cross section having an inner diameter of 24 × 3 mm at 190 ° in the circumferential direction and reciprocating the preheating path twice.

In FIG. 11, as the test results, the inner wall temperatures of the reaction tubes of Comparative Examples 1 and 2 and Examples 1 to 3 are shown by the difference in concentration. The higher the concentration (blacker), the higher the temperature. As shown in FIG. 11, in Comparative Examples 1 and 2, the temperature of the thin tube portion extending upward from the gas introduction portion 233 is lower than the temperature of the reaction tube (the temperature of the portion where the thin tube is not arranged). It can be seen that the temperature of the reaction tube is uneven, and in Examples 1 to 3, the unevenness of the temperature of the reaction tube is suppressed as compared with Comparative Examples 1 and 2.

In the examples (Examples 1 to 3), the preheating path of the preheating unit 260 is longer than that of the comparative example (Comparative Example 1 or Comparative Example 2), so that the gas is preheated more efficiently. Since the influence of the gas passing through the thin tube 270 is reduced, the temperature unevenness of the reaction tube 204 is suppressed.
Further, in Examples 2 and 3, since the preheating path of the preheating unit 260 is longer than that in Example 1, the gas is preheated more efficiently, and the influence of the gas passing through the thin tube 270 is obtained. Is reduced, so that unevenness in the temperature of the response pipe 204 is suppressed.
Further, in Example 3, as compared with Example 2, the cross-sectional area of the preheating path of the preheating tube 266 is larger than the cross-sectional area of the preheating path of the connecting tube 268, so that the gas is preheated more efficiently and the thin tube 270. Since the influence of the gas passing through the pipe 204 is reduced, the unevenness of the temperature of the response pipe 204 is suppressed.
In particular, in Example 3, since the cross-sectional area (inner diameter) of the preheating path of the preheating section 260 is large and the preheating path is long, the area for applying heat to the gas in the preheating section 260 and It is considered that the contact time becomes long and the temperature of the gas is sufficiently high before it flows into the thin tube 270. Therefore, the temperature unevenness in the wafer processing region 262 is substantially eliminated.

The graph on the left side of FIG. 12 shows the temperature distribution in the vertical direction on the gas inlet side (Inlet nozzle side), and the graph in the center of FIG. 12 shows the temperature distribution on the gas discharge part side (Outlet nozzle side). The temperature distribution in the direction is shown. The vertical axis of the graph represents the height dimension (unit: mm) with respect to the lower end of the wafer processing region 262 as a reference (0), and the horizontal axis of the graph represents the temperature (° C.) of the inner wall of the reaction tube 204.
Further, the vertical axis of the graph on the right side of FIG. 12 shows the temperature difference between the temperature on the gas introduction portion side and the temperature on the gas discharge portion side. As shown in the graph on the right side of FIG. 12, it can be seen that in Examples 1 to 3, the temperature difference in the wafer processing region 262 is smaller than that in Comparative Examples 1 and 2, that is, the temperature unevenness is small.
As described above, in the configuration of the embodiment to which the present disclosure is applied, since the temperature unevenness of the wafer processing region 262 of the reaction tube 204 is suppressed, it can be seen that the plurality of wafers 200 arranged on the boat 217 can be uniformly processed. ..

[Other Embodiments]
According to the above-described embodiment, the buffer section 272 is provided at the apex of the reaction tube 204 in addition to the preheating section 260 to heat the gas temporarily accumulated in the buffer section 272, but from the nozzle tube 274 Since the temperature of the gas ejected into the processing chamber 201 becomes sufficiently high (in other words, the temperature required for processing the wafer 200), the buffer portion 272 is omitted, and as shown in FIG. 13, the end portion of the thin tube 270 is omitted. May be configured to be connected to the nozzle tube 274. Here, the tube members in the present embodiment are a thin tube 230, a preheating section 260, a thin tube 270, and a nozzle tube 274.

According to this embodiment, the reaction tube 204 internally constitutes the processing chamber 201 for processing the wafer 200, and the gas introduction unit 233 provided on the lower end side of the reaction tube 204 into which the processing gas is introduced and the gas. The introduction section 233 and the nozzle tube 274 provided on the side surface of the reaction tube 204 having a gas hole 278 for supplying the treatment gas to the treatment chamber 201 are communicated with each other and extend from the gas introduction section 233 to the ceiling of the reaction tube 204. A tube member provided between the reaction tube 204 and the heater 206 via the section, and a side surface of the reaction tube 204, which is provided on the lower end side opposite to the installation position of the gas introduction section 233 and processed. A gas exhaust unit 231 for discharging the processing gas from the chamber 201 is provided, and the pipe member is located on the side surface of the reaction tube 204 and at a position lower than the substrate processing region facing the wafer 200 arranged in the processing chamber 201. A configuration is provided having a preheating path (preheating section 260) that is provided and extends in a direction intersecting the direction of the shortest distance connecting the gas introduction section 233 and the ceiling section. The action and effect in this embodiment are at least the same as those in the first embodiment. Further, at least one of the upper heater 280 and the ceiling heater 282 in the second embodiment may be added, and the operation and effect in this case are the same as those in the second embodiment.

[Other Embodiments]
Further, according to the above-described embodiment, the temperature of the gas ejected from the nozzle tube 274 into the processing chamber 201 is set to be sufficiently high (in other words, the temperature required for processing the wafer 200). However, by providing the preheating unit 260, the temperature of the gas ejected into the processing chamber 201 can be sufficiently raised, and the temperature of the gas in the flow path to the gas hole 278 can be sufficiently raised. Therefore, the buffer section 272 and the nozzle tube 274 are omitted, and as shown in FIG. 14, a thin tube 230, 270 and a preheating section 260 are provided on the outer peripheral surface of the reaction tube 204, and a gas is provided in the thin tube 270 at the ceiling portion of the reaction tube 204. It may be a simple structure having only holes 278. That is, the tube members in the present embodiment are a thin tube 230, a preheating section 260, and a thin tube 270.

According to this embodiment, the processing chamber 201 for processing the wafer 200 is internally configured, and the reaction tube 204 is heated by the heater 206 provided around the inside, and is provided on the lower end side of the reaction tube 204 for processing. The gas introduction unit 233 into which the gas is introduced, the gas introduction unit 233, and the gas hole 278 provided in the ceiling portion for supplying the processing gas to the processing chamber 201 are communicated with each other, and the reaction tube 204 and the heater 206 are connected to each other. A tube member provided between the tubes is provided, and the tube member is provided on the side surface of the reaction tube 204 at a position lower than the substrate processing area on which the wafer 200 arranged in the processing chamber 201 faces, and gas is introduced. Provided is a configuration having a preheating path (preheating section 260) extending in a direction intersecting the direction connecting the section 233 and the ceiling portion of the reaction tube 204 at the shortest distance. The action and effect in this embodiment are the same as those in the first embodiment.

Further, in this embodiment, a buffer portion 272 provided on the ceiling portion of the reaction tube 204 to temporarily retain the processing gas may be provided. The buffer unit 272 is configured to have a gas hole 278 for communicating the pipe member to the processing chamber 201 and supplying the processing gas to the processing chamber 201. In this embodiment, by providing the buffer unit 272, the processing gas is heated by the heater 206 even when it stays in the buffer unit 272, and it is considered that the effect is further increased. Further, at least one of the upper heater 280 and the ceiling heater 282 in the second embodiment may be added, and the operation and effect in this case are the same as those in the second embodiment.

It goes without saying that the present disclosure is not limited to the above embodiments, and various changes can be made without departing from the gist thereof.

In the preheating section 260 of the above embodiment, the shape of the gas flow path, that is, the preheating path (composed of the preheating tube 266, the connecting tube 268, etc.) is rectangular wavy in the side view of the reaction tube 204. However, the shape of the preheating path is not limited to the rectangular wave shape, and if it is a so-called zigzag shape such as a sine curve shape or a triangular wave shape, the shape and the extending direction of the zigzag shape are not particularly limited.

That is, in the preheating section 260, a direction (example) in which the side surface of the reaction tube 204 intersects the shortest distance direction (vertical direction of the reaction tube 204) connecting the gas introduction section 233 and the buffer section 272 to the gas flow path. If there is a part that extends in the circumferential direction of the reaction tube 204), instead of connecting the gas introduction section 233 to the buffer section 272 at the shortest distance, for example, if there is a pipe that bypasses the reaction tube 204 in the circumferential direction and lengthens the preheating path. Good. As a result, the gas can be sufficiently preheated.

Although not shown, in the preheating section 260, a preheating path (piping) through which the gas passes may be provided on the outer peripheral surface of the reaction tube 204 in a spiral shape. Even in this case, the preheating path through which the gas flows becomes long, and the gas can be sufficiently preheated.

In the embodiment of the present disclosure, the case of processing a wafer has been described, but the present disclosure can be applied to a general substrate processing apparatus for processing a glass substrate of a liquid crystal panel or a substrate such as a magnetic disk or an optical disk.

100 ... Processing device (board processing device), 200 ... Wafer (board), 201 ... Processing room, 202 ... Processing furnace, 204 ... Reaction tube (inner tube), 206 ... Heater (heating part), 217 ... Boat (holding tool) ), 230 ... thin tube (tube member), 231 ... gas exhaust section <exhaust section), 233 ... gas introduction section, 240 ... controller (control section), 260 ... preheating section (tube member, preheating path), 262 ... Wafer processing area (substrate processing area), 266 ... preheating tube (second preheating part, tube member, preheating path), 268 ... connecting tube (first preheating part, tube member, preheating path), 270 ... thin tube (1st supply section, tube member) 274 ... Nozzle tube (tube member), 278 ... Gas hole (gas supply section), 284 ... Preheating tube (tube member, preheating path)

Claims (5)

It is a reaction tube that has a processing chamber for processing the substrate inside and is heated by a heating unit provided around it.
A gas introduction section provided on the lower end side of the reaction tube into which the processing gas is introduced,
At least at a position facing the substrate processing region for processing the substrate, a first supply unit arranged along the side surface of the reaction tube and a position lower than the substrate processing region are provided from the gas introduction unit to the gas introduction unit. It has a first preheating section extending in a direction toward the ceiling of the reaction tube and a second preheating section extending in a direction perpendicular to the direction toward the ceiling of the reaction tube, and the first preheating section and the said By combining the second preheating unit, the preheating unit configured to communicate the gas introduction unit and the first supply unit, and
Reaction tube equipped with. The reaction tube according to claim 1, wherein in the preheating section, the first preheating section and the second preheating section are alternately combined to form a preheating path. The reaction tube according to claim 2, wherein the preheating path is formed in at least one shape selected from the group consisting of a rectangular wave shape, a sine curve shape, and a triangular wave shape. A reaction tube in which a processing chamber for processing a substrate is formed inside and is heated by a heating unit provided around it, and at least a gas introduction unit provided on the lower end side of the reaction tube into which a processing gas is introduced. At a position facing the substrate processing region for processing the substrate, a first supply unit arranged along the side surface of the reaction tube and a position lower than the substrate processing region are provided, and the reaction is performed from the gas introduction unit. It has a first preheating section extending in a direction toward the ceiling of the tube and a second preheating section extending in a direction perpendicular to the direction toward the ceiling of the reaction tube, and the first preheating section and the first preheating section. A reaction tube provided with a preheating unit configured to communicate the gas introduction unit and the first supply unit by combining two preheating units.
A control unit that supplies the processing gas to the substrate via the preheating unit and controls the processing of the substrate.
Board processing device equipped with. A reaction tube in which a processing chamber for processing a substrate is formed inside, and faces a gas introduction section provided on the lower end side of the reaction tube into which a processing gas is introduced and at least a substrate processing region for processing the substrate. In terms of position, a first supply unit arranged along the side surface of the reaction tube and a second supply unit provided at a position lower than the substrate processing region and extending from the gas introduction unit toward the ceiling portion of the reaction tube. By having one preheating part and a second preheating part extending in a direction perpendicular to the direction toward the ceiling part of the reaction tube, the first preheating part and the second preheating part are combined. A step of carrying the substrate into a reaction tube provided with a preheating section configured to communicate the gas introduction section and the first supply section.
A step of supplying the processing gas to the substrate via the preheating unit to process the substrate, and
A method for manufacturing a semiconductor device having.