SG10202001003PA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10202001003PA
SG10202001003PA SG10202001003PA SG10202001003PA SG10202001003PA SG 10202001003P A SG10202001003P A SG 10202001003PA SG 10202001003P A SG10202001003P A SG 10202001003PA SG 10202001003P A SG10202001003P A SG 10202001003PA SG 10202001003P A SG10202001003P A SG 10202001003PA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10202001003PA
Inventor
Furuta Kenji
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10202001003PA publication Critical patent/SG10202001003PA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54Glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
SG10202001003PA 2019-02-19 2020-02-04 Wafer processing method SG10202001003PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019027325A JP7233816B2 (en) 2019-02-19 2019-02-19 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10202001003PA true SG10202001003PA (en) 2020-09-29

Family

ID=71844031

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202001003PA SG10202001003PA (en) 2019-02-19 2020-02-04 Wafer processing method

Country Status (6)

Country Link
US (1) US11195757B2 (en)
JP (1) JP7233816B2 (en)
KR (1) KR20200101281A (en)
CN (1) CN111571043B (en)
DE (1) DE102020202005A1 (en)
SG (1) SG10202001003PA (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023026125A (en) 2021-08-12 2023-02-24 株式会社ディスコ Processing method of work-piece

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3867108B2 (en) * 2000-09-13 2007-01-10 浜松ホトニクス株式会社 Laser processing equipment
JP2005268752A (en) * 2004-02-19 2005-09-29 Canon Inc Method of laser cutting, workpiece and semiconductor-element chip
JP5183892B2 (en) * 2006-07-03 2013-04-17 浜松ホトニクス株式会社 Laser processing method
JP5468847B2 (en) 2009-08-28 2014-04-09 株式会社ディスコ Wafer laser processing method
JP5939769B2 (en) 2011-11-11 2016-06-22 株式会社ディスコ Processing method of plate
JP5988603B2 (en) * 2012-02-17 2016-09-07 株式会社ディスコ Method for dividing optical device wafer
JP6101468B2 (en) 2012-10-09 2017-03-22 株式会社ディスコ Wafer processing method
JP6152013B2 (en) 2013-08-16 2017-06-21 株式会社ディスコ Wafer processing method
JP6353683B2 (en) * 2014-04-04 2018-07-04 浜松ホトニクス株式会社 Laser processing apparatus and laser processing method
JP6226803B2 (en) 2014-04-07 2017-11-08 株式会社ディスコ Processing method
JP6679156B2 (en) * 2015-10-27 2020-04-15 株式会社ディスコ Wafer processing method
JP2017107903A (en) * 2015-12-07 2017-06-15 株式会社ディスコ Processing method of wafer
JP6640005B2 (en) 2016-04-12 2020-02-05 株式会社ディスコ Wafer processing method
JP6821245B2 (en) * 2016-10-11 2021-01-27 株式会社ディスコ Wafer processing method
JP6870974B2 (en) * 2016-12-08 2021-05-12 株式会社ディスコ How to divide the work piece
JP2018098352A (en) * 2016-12-13 2018-06-21 株式会社ディスコ Wafer processing method
WO2020105150A1 (en) 2018-11-19 2020-05-28 株式会社東京精密 Laser machining device and control method therefor

Also Published As

Publication number Publication date
JP7233816B2 (en) 2023-03-07
KR20200101281A (en) 2020-08-27
US11195757B2 (en) 2021-12-07
CN111571043A (en) 2020-08-25
DE102020202005A1 (en) 2020-08-20
JP2020136457A (en) 2020-08-31
TW202032652A (en) 2020-09-01
CN111571043B (en) 2023-05-12
US20200266104A1 (en) 2020-08-20

Similar Documents

Publication Publication Date Title
SG10201905294RA (en) Wafer processing method
SG10201904699RA (en) Wafer processing method
SG10202006736YA (en) Wafer processing method
SG10202000576QA (en) Wafer processing method
SG10201905935VA (en) Wafer processing method
SG10202004876YA (en) Wafer processing method
SG10201912832SA (en) Wafer processing method
SG10201911116YA (en) Wafer processing method
SG10201909522RA (en) Wafer processing method
SG10201906678TA (en) Wafer processing method
SG10201905936RA (en) Wafer processing method
SG10201904719TA (en) Wafer processing method
SG10202009952SA (en) Wafer processing method
SG10202003482RA (en) Wafer processing method
SG10202002647RA (en) Wafer processing method
SG10201910165QA (en) Wafer processing method
SG10201910032WA (en) Wafer processing method
SG10201906896QA (en) Wafer processing method
SG10201906897SA (en) Wafer processing method
SG10201904710UA (en) Wafer processing method
SG10202010592VA (en) Wafer processing method
SG10202009948YA (en) Wafer processing method
SG10202009949PA (en) Wafer processing method
SG10202009268SA (en) Wafer processing method
SG10202008571TA (en) Wafer processing method